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21.
公开(公告)号:US20220329251A1
公开(公告)日:2022-10-13
申请号:US17846683
申请日:2022-06-22
Applicant: Micron Technology, Inc.
Inventor: Pierguido Garofalo
IPC: H03M1/06
Abstract: A method has been disclosed that relates to electrical variability compensation technique for configurable-output circuits. The compensation technique can be applied to a generality of circuits whose output has to vary between two electrical limits spanning the range in between them according to a specific code given as input. A switching sequence that is process gradient-direction agnostic has been disclosed which limits variability. An electric device comprising a processing gradient-direction agnostic configurable-output circuit has been also disclosed.
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公开(公告)号:US09767857B2
公开(公告)日:2017-09-19
申请号:US14668812
申请日:2015-03-25
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Gerald John Barkley , Daniele Vimercati , Pierguido Garofalo
CPC classification number: G11C5/025 , G11C7/1042 , G11C8/12 , G11C13/0004 , G11C13/004 , G11C13/0069 , G11C16/08 , G11C16/10 , G11C16/26
Abstract: Subject matter disclosed herein relates to methods and apparatus, such as memory devices and systems including such memory devices. In one apparatus example, a plurality of block configurations may be employed. Block configurations may include an arrangement of similarly doped semiconductor switches. Block configurations may select a respective tile of a memory array, a particular memory cell of the respective tile, and select a memory operation to apply to the particular memory cell. Immediately adjacent block configurations within a particular slice of the memory array may be substantially mirrored and immediately adjacent block configurations in separate immediately adjacent slices of the memory array may be substantially similar. Similarly doped diffusion regions for similarly doped semiconductor switches in substantially mirrored block configurations may be arranged to electrically share a common potential signal value level. Other apparatus and methods are also disclosed.
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