公开(公告)号：US20160336339A1

公开(公告)日：2016-11-17

申请号：US14881350

申请日：2015-10-13

Applicant: Macronix International Co., Ltd.

Inventor： Cheng-Hsien Cheng ,  Chih-Wei Lee ,  Shaw-Hung Ku ,  Wen-Pin Lu

IPC: H01L27/115 ,  G11C16/14 ,  H01L29/792 ,  H01L29/51 ,  H01L29/423 ,  G11C16/04 ,  G11C5/06

CPC classification number: H01L27/11582 ,  G11C5/063 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/14 ,  G11C2216/02 ,  H01L27/11565 ,  H01L29/7926

Abstract: Embodiments of the present invention provide improved 3D non-volatile memory devices and associated methods. In one embodiment, a string of 3D non-volatile memory cells is provided. The string comprises a core extending along an axis of the string, the core having an elliptical cross section in a plane perpendicular to the axis; and a plurality of word lines, each word line disposed around a part of the core, the plurality of word lines spaced along the axis, and each word line corresponding to one of the memory cells. In various embodiments, at least one operating parameter is defined in order to improve the operation of the 3D non-volatile memory device.

Abstract translation: 本发明的实施例提供改进的3D非易失性存储器件和相关联的方法。 在一个实施例中，提供一串3D非易失性存储单元。 弦线包括沿着弦的轴线延伸的芯，芯在垂直于轴线的平面中具有椭圆形横截面; 以及多个字线，每个字线围绕所述芯的一部分设置，所述多个字线沿着所述轴间隔开，并且每个字线对应于所述存储器单元之一。 在各种实施例中，为了改善3D非易失性存储器件的操作，定义了至少一个操作参数。