公开(公告)号：US6097185A

公开(公告)日：2000-08-01

申请号：US918973

申请日：1997-08-27

申请人： Shigeru Watanabe ,  Shinji Kawasaki

发明人： Shigeru Watanabe ,  Shinji Kawasaki

IPC分类号： G01R33/48 ,  A61B5/055 ,  G01R33/54 ,  G01V3/00

CPC分类号： G01R33/4835

摘要： An MRI apparatus essentially consisting of a static magnetic field generating system, a gradient magnetic field generating system, a transmission system, a receiving system, a sequencer, a signal processing system and means for displaying the resulting image, wherein the sequencer generates a pulse sequence comprising pulse sequence units each including applying of radio frequency magnetic field pulses for exciting a plurality of slices, the pulses being in a number identical to the number of the slices, applying subsequently sequentially of a plurality of 180.degree. pulses each for simultaneously exciting all of the slices, and acquisition of echo signals for each slice; and the signal processing system arranges the acquired echo signals for a single image on a k-space for each slice in accordance with the phase encoding and performs image reconstruction operation using the signals. The MRI apparatus of the present invention reduces the number of RF pulses applied and enables fast multi-slice imaging.

摘要翻译： 一种MRI装置，主要由静态磁场产生系统，梯度磁场产生系统，传输系统，接收系统，定序器，信号处理系统和显示所产生的图像的装置组成，其中定序器产生脉冲序列 包括脉冲序列单元，每个脉冲序列单元包括施加用于激励多个片段的射频磁场脉冲，脉冲数量等于片数，随后依次施加多个180度脉冲，以同时激发所有 切片和每个切片的回波信号的采集; 并且信号处理系统根据相位编码将针对每个切片的单个图像的获取的回波信号布置在k空间上，并使用该信号进行图像重建操作。 本发明的MRI装置减少了施加的RF脉冲的数量，并且能够进行快速的多切片成像。

公开(公告)号：US06059893A

公开(公告)日：2000-05-09

申请号：US123751

申请日：1998-07-27

申请人： Shinji Kawasaki

发明人： Shinji Kawasaki

IPC分类号： H01L21/304 ,  B08B5/02 ,  B08B15/04 ,  H01L21/00 ,  B08B7/04 ,  B08B5/04

CPC分类号： H01L21/67028 ,  B08B15/04 ,  B08B5/02 ,  Y10S134/902

摘要： A semiconductor cleaning method for removing particles that have adhered to the back side of a semiconductor wafer. The semiconductor wafer is placed on a support. Inert gas is blown against the back of the semiconductor wafer by a plurality of nozzles, each of which is positioned at a predetermined angle to the back of the semiconductor wafer and inclined in a first direction. An air exhaust is located near the periphery of the semiconductor wafer and arranged so as to suck in the particles removed from the semiconductor wafer with the nozzles.

摘要翻译： 一种用于去除粘附到半导体晶片背面的颗粒的半导体清洁方法。 将半导体晶片放置在支撑件上。 惰性气体通过多个喷嘴吹向半导体晶片的背面，每个喷嘴位于与半导体晶片背面成预定的角度并沿第一方向倾斜。 排气位于半导体晶片的周围附近，并配置成以喷嘴吸引从半导体晶片去除的粒子。

公开(公告)号：US6043650A

公开(公告)日：2000-03-28

申请号：US10596

申请日：1998-01-22

申请人： Yo Taniguchi ,  Kenichi Okajima ,  Shinji Kawasaki

发明人： Yo Taniguchi ,  Kenichi Okajima ,  Shinji Kawasaki

IPC分类号： G01R33/48 ,  A61B5/055 ,  G01R33/567 ,  G01V3/00

CPC分类号： G01R33/5673

摘要： There are provided body movement measuring means for measuring the movement of an object of inspection and control means for controlling at least means for applying a gradient magnetic field and means for applying a high frequency magnetic field. The control means performs a sequence for measuring an echo by applying a phase-encoding gradient magnetic field quantity a plurality of times with the same phase-encoding gradient magnetic field quantity and repeatedly executes the sequence while varying the phase-encoding gradient magnetic field quantity. When the phase-encoding gradient magnetic field quantity is small, the number of execution times of the sequence executed with the same phase-encoding gradient magnetic field quantity in a case where the phase-encoding gradient magnetic field quantity is small is set to be larger than a case where the phase encoding gradient magnetic field quantity is large to reduce the probability of omission occurrence of echo measurement in the small phase-encoding magnetic field which exerts a large influence on an image, thereby suppressing the occurrence of an artifact.

摘要翻译： 提供了用于测量用于控制至少用于施加梯度磁场的装置的检查和控制装置的物体的运动的身体运动测量装置和用于施加高频磁场的装置。 控制装置通过以相同的相位编码梯度磁场量多次施加相位编码梯度磁场量来执行用于测量回波的序列，并且在改变相位编码梯度磁场量的同时重复执行该序列。 当相位编码梯度磁场量小时，在相位编码梯度磁场量较小的情况下，以相同相位编码倾斜磁场量执行的序列的执行次数被设定为较大 比相位编码梯度磁场量大的情况，以减小对图像产生较大影响的小相位编码磁场中忽略出现回波测量的可能性，从而抑制伪像的发生。

公开(公告)号：US5806138A

公开(公告)日：1998-09-15

申请号：US597170

申请日：1996-02-06

申请人： Shinji Kawasaki

发明人： Shinji Kawasaki

IPC分类号： H01L21/304 ,  B08B5/02 ,  B08B15/04 ,  H01L21/00 ,  B08B5/04

CPC分类号： H01L21/67028 ,  B08B15/04 ,  B08B5/02 ,  Y10S134/902

摘要： A semiconductor cleaning apparatus for removing particles that have adhered to the back side of a semiconductor wafer. The semiconductor wafer is placed on a support. Inert gas is blown against the back of the semiconductor wafer by a plurality of nozzles, each of which is positioned at a predetermined angle to the back of the semiconductor wafer and inclined in a first direction. An air exhaust is located near the periphery of the semiconductor wafer and arranged so as to suck in the particles removed from the semiconductor wafer with the nozzles.

摘要翻译： 一种用于去除粘附到半导体晶片背面的颗粒的半导体清洁装置。 将半导体晶片放置在支撑件上。 惰性气体通过多个喷嘴吹向半导体晶片的背面，每个喷嘴位于与半导体晶片背面成预定的角度并沿第一方向倾斜。 排气位于半导体晶片的周围附近，并配置成以喷嘴吸引从半导体晶片去除的粒子。

公开(公告)号：US5445902A

公开(公告)日：1995-08-29

申请号：US133872

申请日：1993-10-12

申请人： Takao Soma ,  Tomonori Takahashi ,  Shinji Kawasaki ,  Katsuki Yoshioka

发明人： Takao Soma ,  Tomonori Takahashi ,  Shinji Kawasaki ,  Katsuki Yoshioka

IPC分类号： H01M4/86 ,  H01M8/04 ,  H01M8/12 ,  H01M8/02

CPC分类号： H01M8/04089 ,  H01M8/04007 ,  H01M8/1231 ,  Y10T29/49108

摘要： A method for operating a power generator in which a solid oxide fuel cell is used as a power-generating element and an air electrode of the solid oxide fuel cell is composed of lanthanum manganite, the method involving the step of setting a heating rate and a cooling rate at least in a temperature range of 800.degree. C. to 900.degree. C. at not less than 3.degree. C./min. when the fuel cell is heated up to an operating temperature at the time of starting the power generator and when the fuel cell is cooled from the operating temperature at the time of stopping the power generator. Alternatively, the method involves the step of setting a partial pressure of oxygen, at least in a temperature range of 800.degree. C. to 900.degree. C., in an atmosphere to which the air electrode is exposed, to at not less than 10.sup.-15 arms but not more than 10.sup.-1 arms when the fuel cell is heated up to an operating temperature at the time of starting the power generator and when the fuel cell is cooled from the operating temperature at the time of stopping the power generator.

摘要翻译： 一种使用固体氧化物型燃料电池作为发电元件的发电机的动作方法以及固体氧化物型燃料电池的空气电极，由亚锰酸镧构成，其特征在于，包括：设定加热速度和 冷却速度至少在800℃至900℃的温度范围内，不低于3℃/分钟。 当燃料电池在启动发电机时被加热到工作温度，并且当燃料电池从停止发电机时的工作温度冷却时。 或者，该方法包括在空气电极暴露的气氛中至少在800℃〜900℃的温度范围内设定氧分压至不小于10度的步骤， 当燃料电池被加热到启动发电机时的工作温度，并且当燃料电池从停止发电机时的工作温度冷却时，15臂但不大于10-1臂。

公开(公告)号：US5292599A

公开(公告)日：1994-03-08

申请号：US948011

申请日：1992-09-02

申请人： Takao Soma ,  Shinji Kawasaki ,  Katsuki Yoshioka

发明人： Takao Soma ,  Shinji Kawasaki ,  Katsuki Yoshioka

IPC分类号： H01M8/02 ,  H01M8/04 ,  H01M8/12 ,  H01M8/24 ,  H01M8/10

CPC分类号： H01M8/0258 ,  H01M8/0247 ,  H01M8/026 ,  H01M8/2425 ,  H01M8/243 ,  H01M2008/1293 ,  H01M2300/0074 ,  H01M8/0252 ,  H01M8/0271 ,  H01M8/04022

摘要： A cell unit for use in a solid oxide fuel cell has a laminate structure including a cell element and a separator. The cell element includes a dense and planar solid electrolyte having a rectangular plane shape, and an air electrode film and a fuel electrode film provided on opposite surfaces of the flat solid electrolyte, respectively. The separator is made of a dense electron conductor. A plurality of oxidizing gas flow paths are defined between the separator and the air electrode, and the cell element has a rectangular planar shape and a ratio of a short side to a long side of the rectangular planar shape is not less than 2.

摘要翻译： 用于固体氧化物燃料电池的电池单元具有包括电池元件和隔板的层压结构。 电池元件包括具有矩形平面形状的致密和平面的固体电解质，以及分别设置在扁平固体电解质的相对表面上的空气电极膜和燃料电极膜。 分离器由致密的电子导体制成。 在隔板和空气电极之间限定多个氧化气体流路，电池元件为矩形平面形状，矩形平面形状的短边与长边的比例不小于2。

公开(公告)号：US5182059A

公开(公告)日：1993-01-26

申请号：US899159

申请日：1992-06-15

申请人： Shinji Kawasaki ,  Masaharu Kajita ,  Keiji Matsuhiro

发明人： Shinji Kawasaki ,  Masaharu Kajita ,  Keiji Matsuhiro

IPC分类号： C04B35/575

CPC分类号： C04B35/575

摘要： A process for producing high density SiC sintered bodies by primarily firing and then hot isostatic pressing. The process includes the steps of formulating a powder consisting essentially of 90.0 to 99.8% by weight of the SiC powder, boron or a boron-containing compound in an amount of 0.1 to 5.0% by weight when calculated as boron, and carbon or a carbon-producing organic compound in an amount of 0.1 to 5.0% by weight when calculated as carbon, mixing and shaping the formulated powder, firing the shaped bodies in a temperature range from 1,900.degree. to 2,300.degree. C. in vacuum or in an inert gas atmosphere, and then hot isostatically pressing the fired bodies in a temperature range from 1,800.degree. to 2,200.degree. C. under a pressure of not less than 100 atms in an inert gas atmosphere. The SiC powder is an SiC mixed powder consisting essentially of 95.0 to 99.9% by weight of a first SiC powder composed of at least one kind of 3C and 2H polytypes and a second SiC powder composed of at least one kind of 6H, 4H and 15R polytypes and having an average grain diameter being less than twice that of the first SiC powder.

摘要翻译： 通过主要烧制然后进行热等静压制备高密度SiC烧结体的方法。 该方法包括以硼计算，基本上由90.0至99.8重量％的SiC粉末，硼或含硼化合物配制的粉末的量为0.1至5.0重量％，以及碳或碳 以碳计算为0.1〜5.0重量％的有机化合物，混合并成形配制的粉末，在真空中或在惰性气体气氛中在1900〜2300℃的温度范围内烧成成形体 ，然后在惰性气体气氛中，在不低于100atm的压力下，在1,800〜2200℃的温度范围内对烧成体进行热等静压。 SiC粉末是基本上由95.0-99.9重量％的由至少一种3C和2H多型元素组成的第一SiC粉末和由至少一种6H，4H和15R组成的第二SiC粉末组成的SiC混合粉末 多型，平均粒径小于第一SiC粉末的两倍。

公开(公告)号：US07781053B2

公开(公告)日：2010-08-24

申请号：US12194015

申请日：2008-08-19

申请人： Takuya Hiramatsu ,  Shinji Kawasaki

发明人： Takuya Hiramatsu ,  Shinji Kawasaki

IPC分类号： B32B3/26 ,  C04B35/64

CPC分类号： C04B38/0022 ,  C04B35/565 ,  C04B35/571 ,  C04B35/573 ,  C04B35/6303 ,  C04B35/6316 ,  C04B2111/00793 ,  C04B2235/3205 ,  C04B2235/3213 ,  C04B2235/3418 ,  C04B2235/36 ,  C04B2235/428 ,  C04B2235/483 ,  C04B2235/5436 ,  C04B2235/80 ,  Y10T428/249953 ,  Y10T428/249969 ,  Y10T428/249985 ,  Y10T428/249986 ,  C04B38/0006 ,  C04B38/0054 ,  C04B38/0074

摘要： Provided are a silicon carbide-based porous article comprising silicon carbide particles as an aggregate, metallic silicon and an aggregate derived from organometallic compound particles to form pores through volume shrinkage due to decomposition/conversion by heat treatment; and a method for producing the silicon carbide-based porous article, comprising, adding organometallic compound particles to form pores through volume shrinkage due to decomposition/conversion by heat treatment to a raw-material mixture containing silicon carbide particles and metallic silicon, then forming into an intended shape, calcinating and/or firing the resultant green body, forming pores through volume shrinkage due to decomposition/conversion of the organometallic compound particles, and the decomposed/converted substance of the organometallic compound particles being present as an aggregate in the porous article.

摘要翻译： 提供一种碳化硅系多孔体，其包含作为骨料的碳化硅颗粒，金属硅和由有机金属化合物颗粒衍生的聚集体，以通过热处理分解/转化的体积收缩而形成孔; 以及碳化硅系多孔体的制​​造方法，其特征在于，在由含有碳化硅粒子和金属硅的原料混合物进行热处理而产生的分解·转化的体积收缩中添加有机金属化合物粒子形成孔， 预期的形状，煅烧和/或焙烧生成的生坯，通过由于有机金属化合物颗粒的分解/转化而产生的体积收缩，以及作为聚集体存在于多孔体中的有机金属化合物颗粒的分解/转化物质形成孔 。

公开(公告)号：US07442662B2

公开(公告)日：2008-10-28

申请号：US11412796

申请日：2006-04-28

申请人： Kenji Morimoto ,  Shinji Kawasaki ,  Hiroaki Sakai

发明人： Kenji Morimoto ,  Shinji Kawasaki ,  Hiroaki Sakai

IPC分类号： C04B35/577

CPC分类号： C04B35/573 ,  C04B35/565 ,  C04B2235/428 ,  C04B2235/72 ,  C04B2235/728 ,  C04B2235/761 ,  C04B2235/80 ,  C04B2235/9607 ,  C04B2235/9623

摘要： A highly heat-conductive Si-containing material containing a Si phase whose lattice constant at room temperature is controlled at a level of more than 0.54302 nm but 0.54311 nm or less. Firing is conducted using a kiln material containing no B compound. With this highly heat-conductive Si-containing material and the process for production thereof, a reduction in heat conductivity can be prevented and a high heat conductivity can be exhibited stably.

摘要翻译： 包含Si相的高导热性含Si材料，其晶格常数在室温下被控制在大于0.54302nm但为0.54311nm或更小的水平。 使用不含B化合物的窑料进行烧制。 通过这种高导热性的含Si材料及其制造方法，可以防止导热性的降低并且可以稳定地显示出高导热性。

公开(公告)号：US07422784B2

公开(公告)日：2008-09-09

申请号：US10537765

申请日：2003-12-10

申请人： Masahiro Furukawa ,  Kenji Morimoto ,  Shinji Kawasaki

发明人： Masahiro Furukawa ,  Kenji Morimoto ,  Shinji Kawasaki

IPC分类号： B32B3/12 ,  B22F3/11

CPC分类号： C04B35/565 ,  B01J20/2803 ,  B01J20/28045 ,  B01J21/04 ,  B01J27/224 ,  B01J35/04 ,  C04B38/0006 ,  C04B38/0038 ,  C04B2111/00793 ,  C04B2111/0081 ,  C04B2111/23 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3217 ,  C04B2235/3418 ,  C04B2235/3436 ,  C04B2235/3454 ,  C04B2235/3481 ,  C04B2235/401 ,  C04B2235/402 ,  C04B2235/428 ,  C04B2235/5436 ,  C04B2235/668 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/9692 ,  Y10T428/24149 ,  Y10T428/249956 ,  Y10T428/249967 ,  Y10T428/249969 ,  C04B35/18 ,  C04B35/195 ,  C04B38/0096 ,  C04B35/10 ,  C04B38/0074 ,  C04B38/0625 ,  C04B38/0645

摘要： A silicon carbide based porous material (1) containing silicon carbide particles (2) as an aggregate and metallic silicon (3) as a bonding material and having a number of pores (5) formed by them, characterized in that it has an oxide phase (4) in at least a part of the pore (5), and the oxide phase (4) contains respective oxides of silicon, aluminum and an alkaline earth metal and contains substantially no alkaline earth metal silicate crystal phase; a method for producing the above porous material; and a honeycomb structure comprising the silicon carbide based porous material. The above porous material is capable of effectively inhibiting the corrosion by an acid (especially acetic acid) used in the operation of carrying a catalyst, that is, is improved in the resistance to an acid.

摘要翻译： 一种碳化硅基多孔材料（1），其包含作为骨料的碳化硅颗粒（2）和作为结合材料的金属硅（3），并且具有由它们形成的多个孔（5），其特征在于，其具有氧化物相 （4）在孔（5）的至少一部分中，氧化物相（4）含有硅，铝和碱土金属的各自的氧化物，并且基本上不含碱土金属硅酸盐结晶相; 一种生产上述多孔材料的方法; 以及包含基于碳化硅的多孔材料的蜂窝结构体。 上述多孔材料能够有效地抑制在携带催化剂的操作中使用的酸（特别是乙酸）的腐蚀，即耐酸性得到改善。