公开(公告)号：US06784509B2

公开(公告)日：2004-08-31

申请号：US10217410

申请日：2002-08-14

申请人： Hiromi Yuasa ,  Yuzo Kamiguchi ,  Masatoshi Yoshikawa ,  Katsuhiko Koui ,  Hitoshi Iwasaki ,  Tomohiko Nagata ,  Takeo Sakakubo ,  Masashi Sahashi

发明人： Hiromi Yuasa ,  Yuzo Kamiguchi ,  Masatoshi Yoshikawa ,  Katsuhiko Koui ,  Hitoshi Iwasaki ,  Tomohiko Nagata ,  Takeo Sakakubo ,  Masashi Sahashi

IPC分类号： H01L2982

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/30 ,  H01F10/3227 ,  H01F10/3272 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/10

摘要： In a spin valve type element, an interface insertion layer (32, 34) of a material exhibiting large spin-dependent interface scattering is inserted in a location of a magnetically pinned layer (16) or a magnetically free layer (20) closer to a nonmagnetic intermediate layer (18). A nonmagnetic back layer (36) may be additionally inserted as an interface not in contact with the nonmagnetic intermediate layer to increase the output by making use of spin-dependent interface scattering along the interface between the pinned layer and the nonmagnetic back layer or between the free layer and the nonmagnetic back layer.

摘要翻译： 在自旋阀型元件中，将表现出大的自旋相关界面散射的材料的界面插入层（32,34）插入到更靠近磁性固定层（16）或磁性层（20）的位置 非磁性中间层（18）。 可以另外插入非磁性背层（36）作为不与非磁性中间层接触的界面，以通过利用沿被钉扎层和非磁性背层之间的界面处的自旋相关界面散射来增加输出， 自由层和非磁背层。

公开(公告)号：US20060164764A1

公开(公告)日：2006-07-27

申请号：US11389175

申请日：2006-03-27

申请人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

发明人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3133 ,  G11B5/3143 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  Y10T428/1114

摘要： There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.

公开(公告)号：US07046489B2

公开(公告)日：2006-05-16

申请号：US11080485

申请日：2005-03-16

申请人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

发明人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

IPC分类号： G11B5/33

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3133 ,  G11B5/3143 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  Y10T428/1114

摘要： There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.

公开(公告)号：US06937446B2

公开(公告)日：2005-08-30

申请号：US09981987

申请日：2001-10-19

申请人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

发明人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

IPC分类号： G11B5/31 ,  G11B5/39

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3133 ,  G11B5/3143 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  Y10T428/1114

摘要： There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.

摘要翻译： 提供了一种具有适当的电阻值的实用磁阻效应元件，其可以被敏化并且具有少量的要控制的磁性层，以及使用该电阻的磁头和磁记录和/或再现系统。 在使感应电流沿与膜的平面垂直的方向流动的磁阻效应元件中，电阻调节层设置在被钉扎层，自由层和非磁性中间层中的至少一个中。 电阻调节层含有氧化物，氮化物，氟化物，碳化物或硼化物作为主要成分。 电阻调节层可以是连续的膜或者可以具有针孔。 因此，可以提供具有适当的电阻值的实用的磁阻效应元件，其可以被敏化并且具有少量的磁性层，同时有效地利用依赖于自旋的散射效应。

公开(公告)号：US07791843B2

公开(公告)日：2010-09-07

申请号：US12498202

申请日：2009-07-06

申请人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

发明人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

IPC分类号： G11B5/39

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3133 ,  G11B5/3143 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  Y10T428/1114

摘要： There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.

摘要翻译： 提供了一种具有适当的电阻值的实用磁阻效应元件，其可以被敏化并且具有少量的要控制的磁性层，以及使用该电阻的磁头和磁记录和/或再现系统。 在使感应电流沿与膜的平面垂直的方向流动的磁阻效应元件中，电阻调节层设置在被钉扎层，自由层和非磁性中间层中的至少一个中。 电阻调节层含有氧化物，氮化物，氟化物，碳化物或硼化物作为主要成分。 电阻调节层可以是连续的膜或者可以具有针孔。 因此，可以提供具有适当的电阻值的实用的磁阻效应元件，其可以被敏化并且具有少量的磁性层，同时有效地利用依赖于自旋的散射效应。

公开(公告)号：US07515386B2

公开(公告)日：2009-04-07

申请号：US11389175

申请日：2006-03-27

申请人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

发明人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

IPC分类号： G11B5/127

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3133 ,  G11B5/3143 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  Y10T428/1114

摘要： There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.

公开(公告)号：US07561383B2

公开(公告)日：2009-07-14

申请号：US12212162

申请日：2008-09-17

申请人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

发明人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

IPC分类号： G11B5/127

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3133 ,  G11B5/3143 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  Y10T428/1114

摘要： There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.

公开(公告)号：US20050157433A1

公开(公告)日：2005-07-21

申请号：US11080485

申请日：2005-03-16

申请人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

发明人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

IPC分类号： G11B5/31 ,  G11B5/39 ,  G11B5/33 ,  G11B5/127

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3133 ,  G11B5/3143 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  Y10T428/1114

摘要： There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.

公开(公告)号：US20090269618A1

公开(公告)日：2009-10-29

申请号：US12498202

申请日：2009-07-06

申请人： Yuuzo KAMIGUCHI ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

发明人： Yuuzo KAMIGUCHI ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

IPC分类号： G11B5/39

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3133 ,  G11B5/3143 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  Y10T428/1114

摘要： There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.

摘要翻译： 提供了一种具有适当的电阻值的实用磁阻效应元件，其可以被敏化并且具有少量的要控制的磁性层，以及使用该电阻的磁头和磁记录和/或再现系统。 在使感应电流沿与膜的平面垂直的方向流动的磁阻效应元件中，电阻调节层设置在被钉扎层，自由层和非磁性中间层中的至少一个中。 电阻调节层含有氧化物，氮化物，氟化物，碳化物或硼化物作为主要成分。 电阻调节层可以是连续的膜或者可以具有针孔。 因此，可以提供具有适当的电阻值的实用的磁阻效应元件，其可以被敏化并且具有少量的磁性层，同时有效地利用依赖于自旋的散射效应。

公开(公告)号：US20050030676A1

公开(公告)日：2005-02-10

申请号：US10937652

申请日：2004-09-10

申请人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

发明人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

IPC分类号： G11B5/39 ,  G01R33/09 ,  G11B5/66 ,  G11B5/33 ,  G11B5/127

CPC分类号： H01F10/30 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3932 ,  G11B5/66 ,  G11B2005/3996 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/325 ,  Y10S428/90 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1143 ,  Y10T428/115 ,  Y10T428/1171 ,  Y10T428/1193 ,  Y10T428/12326 ,  Y10T428/12465 ,  Y10T428/12986 ,  Y10T428/265

摘要： Disclosed are a high-sensitivity and high-reliability magnetoresistance effect device (MR device) in which bias point designing is easy, and also a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device. In the MR device incorporating a spin valve film, the magnetization direction of the free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. In this, the pinned magnetic layer comprises a pair of ferromagnetic films as antiferromagnetically coupled to each other via a coupling film existing therebetween. The device is provided with a means of keeping the magnetization direction of either one of the pair of ferromagnetic films constituting the pinned magnetic layer, and with a nonmagnetic high-conductivity layer as disposed adjacent to a first ferromagnetic layer on the side opposite to the side on which the first ferromagnetic layer is contacted with a nonmagnetic spacer layer. With that constitution, the device has extremely high sensitivity, and the bias point in the device is well controlled.

摘要翻译： 公开了一种容易进行偏置设计的高灵敏度和高可靠性磁阻效应器件（MR器件），以及包含MR器件的磁头，磁头组件和磁记录/再现系统。 在包含自旋阀膜的MR装置中，当施加的磁场为零时，自由层的磁化方向与其中第二铁磁性层的磁化方向成一定角度。 在此，被钉扎的磁性层包括通过其间存在的耦合膜彼此反铁磁耦合的一对铁磁膜。 该装置设置有保持构成被钉扎磁性层的一对铁磁膜中的任一个的磁化方向以及与侧面相反侧的第一铁磁层相邻设置的非磁性高导电性层 第一铁磁层与非磁性间隔层接触。 利用该结构，该器件具有极高的灵敏度，并且器件中的偏置点被良好地控制。