公开(公告)号：US5720897A

公开(公告)日：1998-02-24

申请号：US377380

申请日：1995-01-25

申请人： Russell S. Drago ,  Xu Cheng

发明人： Russell S. Drago ,  Xu Cheng

IPC分类号： B01J31/18 ,  C11D3/39 ,  C01B15/04 ,  C08F4/42

CPC分类号： B01J31/181 ,  B01J31/1805 ,  B01J31/1815 ,  C11D3/3932 ,  B01J2531/16 ,  B01J2531/72 ,  B01J2531/842

摘要： Transition metal containing composition for use as a bleach catalyst comprising at least one transition metal ion coordinated with at least one chelating ligand to form a complex capable of binding O.sub.2 H.sup.-. The ligand(s) should have at least two strong donor functional groups capable of coordinating with a single one of the transition metal ions in the complexes to form a six-member or larger ring. The complexes are capable of coordinating peroxide groups while the ligand functions to substantially prevent precipitation of hydroxides of the transition metal ions in aqueous alkaline solutions of the transition metal containing composition. A detergent-bleach composition comprising an effective amount of a peroxide bleaching agent and an effective amount of the bleach catalyst described above, and a bleaching agent composition comprising a peroxide compound present in an amount effective to impart a bleaching action and a catalyst present in an effective amount to promote the bleaching action of the peroxide compound comprising the transition metal composition described above are also disclosed, as well as a catalyst present in an effective amount to promote the bleaching action of peroxide compounds in a detergent-bleach composition comprising the transition metal composition described above.

摘要翻译： 用作漂白催化剂的含金属过渡金属组合物，其包含与至少一种螯合配体配位的至少一种过渡金属离子以形成能结合O 2 -H的络合物。 配体应具有能与配合物中的单个过渡金属离子配位的至少两个强供体官能团，以形成六个或更大的环。 配合物能够配位过氧化物基团，同时配体起到基本上防止含过渡金属的组合物的碱性水溶液中过渡金属离子的氢氧化物析出的作用。 一种洗涤剂漂白组合物，其包含有效量的过氧化物漂白剂和有效量的上述漂白催化剂，以及漂白剂组合物，其包含以有效赋予漂白作用的量存在的过氧化物和存在于 还公开了促进包含上述过渡金属组合物的过氧化物的漂白作用的有效量，以及有效量的促进过氧化物化合物在含有过渡金属的去污剂组合物中的漂白作用的催化剂 组合物。

公开(公告)号：US09771834B2

公开(公告)日：2017-09-26

申请号：US10969752

申请日：2004-10-20

申请人： Xu Cheng ,  Frederick C. Huff

发明人： Xu Cheng ,  Frederick C. Huff

IPC分类号： G06Q30/00 ,  F01K13/02 ,  G06Q10/04 ,  G06Q10/06 ,  G06Q30/02

CPC分类号： F01K13/02 ,  G06Q10/04 ,  G06Q10/0637 ,  G06Q30/0283 ,  Y02E40/76 ,  Y04S10/54 ,  Y04S10/545 ,  Y04S50/14

摘要： An economic dispatch program allocates a load demand and an emission allowance of a power generation system among various power plants to determine the operational set-points and the pollution control set-points of each of the various power plants in a manner that minimizes the total operating cost for the power generation system, including the pollution control cost. The economic dispatch program uses the pollution control set-points and the load set-points of the various power plants as decision variables and takes into consideration the pollution control costs of the various power plants in allocating the load demand. During operation, the economic dispatch program takes into consideration the pollution credits available to the various power plants in allocating the load demand and pollution control level to determine the optimal operating solution for the power plants.

公开(公告)号：US09606531B2

公开(公告)日：2017-03-28

申请号：US12628821

申请日：2009-12-01

申请人： Xu Cheng ,  Richard W. Kephart ,  Cheng T. Wen ,  B. Erik Ydstie

发明人： Xu Cheng ,  Richard W. Kephart ,  Cheng T. Wen ,  B. Erik Ydstie

IPC分类号： G06G7/48 ,  G05B19/418

CPC分类号： G05B19/41885 ,  G05B2219/32345 ,  G05B2219/32357 ,  Y02P90/18 ,  Y02P90/26

摘要： A high fidelity distributed plant simulation technique includes a plurality of separate simulation modules that may be stored and executed separately in different computing devices. The simulation modules communicate directly with one another to perform accurate simulation of a plant, without requiring a centralized coordinator to coordinate the operation of the simulation system. In particular, numerous simulation modules are created, with each simulation module including a model of an associated plant element and being stored in different drops of a computer network to perform distributed simulation of a plant or a portion of a plant. At least some of the simulation modules, when executing, perform mass flow balances taking into account process variables associated with adjacent simulation modules to thereby assure pressure, temperature and flow balancing.

公开(公告)号：US09570548B2

公开(公告)日：2017-02-14

申请号：US14831000

申请日：2015-08-20

申请人： Xu Cheng ,  Daniel J. Blomberg ,  Jiang-Kai Zuo

发明人： Xu Cheng ,  Daniel J. Blomberg ,  Jiang-Kai Zuo

IPC分类号： H01L21/336 ,  H01L29/06 ,  H01L29/36 ,  H01L21/762 ,  H01L21/8234 ,  H01L27/02

CPC分类号： H01L29/0649 ,  H01L21/76224 ,  H01L21/823481 ,  H01L27/0203 ,  H01L27/0207 ,  H01L29/36

摘要： Deep trench isolation structures and systems and methods including the same are disclosed herein. The systems include a semiconductor device. The semiconductor device includes a semiconductor body, a device region, and the deep trench isolation structure. The deep trench isolation structure is configured to electrically isolate the device region from other device regions that extend within the semiconductor body. The deep trench isolation structure includes an isolation trench, a dielectric material that extends within the isolation trench, a first semiconducting region, and a second semiconducting region. The methods include methods of operating an integrated circuit device that includes a plurality of semiconductor devices that include the disclosed deep trench isolation structures.

摘要翻译： 深沟槽隔离结构及其系统和方法在此公开。 该系统包括半导体器件。 半导体器件包括半导体本体，器件区域和深沟槽隔离结构。 深沟槽隔离结构被配置为将器件区域与在半导体本体内延伸的其它器件区域电隔离。 深沟槽隔离结构包括隔离沟槽，在隔离沟槽内延伸的介电材料，第一半导体区域和第二半导体区域。 所述方法包括操作集成电路器件的方法，所述集成电路器件包括包括所公开的深沟槽隔离结构的多个半导体器件。

公开(公告)号：US20160056234A1

公开(公告)日：2016-02-25

申请号：US14831000

申请日：2015-08-20

申请人： Xu Cheng ,  Daniel J. Blomberg ,  Jiang-Kai Zuo

发明人： Xu Cheng ,  Daniel J. Blomberg ,  Jiang-Kai Zuo

IPC分类号： H01L29/06 ,  H01L27/02

CPC分类号： H01L29/0649 ,  H01L21/76224 ,  H01L21/823481 ,  H01L27/0203 ,  H01L27/0207 ,  H01L29/36

摘要： Deep trench isolation structures and systems and methods including the same are disclosed herein. The systems include a semiconductor device. The semiconductor device includes a semiconductor body, a device region, and the deep trench isolation structure. The deep trench isolation structure is configured to electrically isolate the device region from other device regions that extend within the semiconductor body. The deep trench isolation structure includes an isolation trench, a dielectric material that extends within the isolation trench, a first semiconducting region, and a second semiconducting region. The methods include methods of operating an integrated circuit device that includes a plurality of semiconductor devices that include the disclosed deep trench isolation structures.

摘要翻译： 深沟槽隔离结构及其系统和方法在此公开。 该系统包括半导体器件。 半导体器件包括半导体本体，器件区域和深沟槽隔离结构。 深沟槽隔离结构被配置为将器件区域与在半导体本体内延伸的其它器件区域电隔离。 深沟槽隔离结构包括隔离沟槽，在隔离沟槽内延伸的介电材料，第一半导体区域和第二半导体区域。 所述方法包括操作集成电路器件的方法，所述集成电路器件包括包括所公开的深沟槽隔离结构的多个半导体器件。

公开(公告)号：US09142607B2

公开(公告)日：2015-09-22

申请号：US13403743

申请日：2012-02-23

申请人： Xu Cheng ,  Todd C. Roggenbauer ,  Jiang-Kai Zuo

发明人： Xu Cheng ,  Todd C. Roggenbauer ,  Jiang-Kai Zuo

IPC分类号： H01L29/92 ,  H01L49/02 ,  H01L21/02

CPC分类号： H01L28/40 ,  H01L28/87

摘要： A capacitor suitable for inclusion in a semiconductor device includes a substrate, a first metallization level, a capacitor dielectric, a capacitor plate, an interlevel dielectric layer, and a second metallization level. The first metallization level overlies the substrate and includes a first metallization plate overlying a capacitor region of the substrate. The capacitor dielectric overlies the first metallization plate and includes a dielectric material such as a silicon oxide or silicon nitride compound. The capacitor plate is an electrically conductive structure that overlies the capacitor dielectric. The interlevel dielectric overlies the capacitor plate. The second metallization layer overlies the interlevel dielectric layer and may include a second metallization plate and a routing element. The routing element may be electrically connected to the capacitor plate. The metallization plates may include a fingered structure that includes a plurality of elongated elements extending from a cross bar.

摘要翻译： 适于包含在半导体器件中的电容器包括衬底，第一金属化电平，电容器电介质，电容器板，层间电介质层和第二金属化层。 第一金属化水平覆盖衬底并且包括覆盖衬底的电容器区域的第一金属化板。 电容器电介质覆盖第一金属化板，并且包括诸如氧化硅或氮化硅化合物的介电材料。 电容器板是覆盖电容器电介质的导电结构。 层间电介质覆盖电容器板。 第二金属化层覆盖层间电介质层，并且可以包括第二金属化板和布线元件。 路由元件可以电连接到电容器板。 金属化板可以包括指形结构，其包括从横杆延伸的多个细长元件。

公开(公告)号：US20140264724A1

公开(公告)日：2014-09-18

申请号：US13801514

申请日：2013-03-13

申请人： Xu Cheng ,  Daniel J. Blomberg ,  Zhihong Zhang ,  Jiang-Kai Zuo

发明人： Xu Cheng ,  Daniel J. Blomberg ,  Zhihong Zhang ,  Jiang-Kai Zuo

IPC分类号： H01L29/06 ,  H01L21/76

CPC分类号： H01L29/0638 ,  H01L21/761 ,  H01L21/76224 ,  H01L21/76237 ,  H01L21/763 ,  H01L21/82285 ,  H01L21/823878 ,  H01L21/8249 ,  H01L27/10876 ,  H01L29/0611 ,  H01L29/0649 ,  H01L29/1083 ,  H01L29/66272

摘要： An integrated semiconductor device includes a substrate of a first conductivity type, a buried layer located over the substrate, an isolated region located over a first portion of the buried layer, and an isolation trench located around the isolated region. A punch-through structure is located around at least a portion of the isolation trench. The punch-through structure includes a second portion of the buried layer, a first region located over the second portion of the buried layer, the first region having a second conductivity type, and a second region located over the first region, the second region having the first conductivity type.

摘要翻译： 集成半导体器件包括第一导电类型的衬底，位于衬底上的掩埋层，位于掩埋层的第一部分上方的隔离区域和位于隔离区域周围的隔离沟槽。 穿透结构位于隔离沟槽的至少一部分周围。 所述穿通结构包括所述掩埋层的第二部分，位于所述掩埋层的所述第二部分上方的第一区域，所述第一区域具有第二导电类型，以及位于所述第一区域上方的第二区域，所述第二区域具有 第一种导电类型。

公开(公告)号：US20140107993A1

公开(公告)日：2014-04-17

申请号：US13650296

申请日：2012-10-12

申请人： Xu Cheng

发明人： Xu Cheng

IPC分类号： G06G7/62 ,  G05B13/02

CPC分类号： G05B17/02

摘要： A process characteristic parameter determination system uses a process model and a tuning module to accurately determine a value for a process characteristic parameter within a plant without measuring the process characteristic parameter directly, and may operate on-line or while the process is running to automatically determine a correct value of the process characteristic parameter at any time during on-going operation of the process. The process characteristic parameter value, which may be a heat transfer coefficient value for a heat exchanger, can then be used to enable the determination of a more accurate simulation result and/or to make other on-line process decisions, such as process control decisions, process operational mode decisions, process maintenance decisions such as implementing a soot blowing operation, etc.

摘要翻译： 过程特性参数确定系统使用过程模型和调整模块来精确地确定工厂内的过程特性参数的值，而不直接测量过程特征参数，并且可以在线操作或者在过程运行时自动确定 过程特性参数的正确值在过程的持续操作期间的任何时间。 然后可以使用可以是热交换器的传热系数值的过程特征参数值来确定更准确的模拟结果和/或进行其他在线过程决策，例如过程控制决定 ，过程操作模式决定，过程维护决定，如执行吹灰操作等。

公开(公告)号：US08560283B2

公开(公告)日：2013-10-15

申请号：US12501262

申请日：2009-07-10

申请人： Xu Cheng ,  Richard Williams Kephart ,  Charles Menten

发明人： Xu Cheng ,  Richard Williams Kephart ,  Charles Menten

IPC分类号： G06G7/48 ,  G06F17/50

CPC分类号： G06F17/5009 ,  G05B13/042 ,  G05B17/02

摘要： Methods and apparatus to compensate first principle-based simulation models are disclosed. An example method to compensate a first-principle based simulation model includes applying one or more first test inputs to a process system to generate first output data, applying one or more second test inputs to a first principle model to generate second output data, generating an error model based on the first and second output data, applying input data to the first principle model to generate simulation model output data, and compensating the model data via the error model to generate compensated model output data.

摘要翻译： 公开了补偿第一原理模拟模型的方法和装置。 用于补偿基于第一原理的模拟模型的示例性方法包括将一个或多个第一测试输入应用于过程系统以产生第一输出数据，将一个或多个第二测试输入应用于第一原理模型以产生第二输出数据， 基于第一和第二输出数据的误差模型，将输入数据应用于第一原理模型以生成模拟输出数据，并通过误差模型补偿模型数据，生成补偿模型输出数据。

公开(公告)号：US08527252B2

公开(公告)日：2013-09-03

申请号：US11495812

申请日：2006-07-28

申请人： Richard W. Kephart ,  Xu Cheng ,  Steven J. Schilling ,  Robert L. Yeager

发明人： Richard W. Kephart ,  Xu Cheng ,  Steven J. Schilling ,  Robert L. Yeager

IPC分类号： G06G7/62 ,  G06F9/44 ,  G06F9/455 ,  G06F13/10 ,  G06F13/12

CPC分类号： G05B19/41885 ,  Y02P90/18 ,  Y02P90/26

摘要： A process control system simulation technique performs real-time simulation of an actual process control network as that network is running within a process plant in a manner that is synchronized with the operation of the actual process control network. This real-time, synchronized simulation system includes a simulation process control network and a process model which are automatically updated periodically during the operation of the actual process control network to reflect changes made to the process control network, as well as to account for changes in the plant itself, i.e., changes which require an updated process model. The simulation system provides for more readily accessible and usable simulation activities, as the process control network and the process models used within the simulation system are synchronized with and up-to-date with respect to the current process operating conditions.

摘要翻译： 过程控制系统模拟技术以与网络在实际过程控制网络的操作同步的方式在流程工厂内运行的实际过程控制网络进行实时仿真。 这种实时同步的仿真系统包括模拟过程控制网络和过程模型，它们在实际过程控制网络的操作期间周期性地自动更新，以反映对过程控制网络所做的更改，并考虑到变更 植物本身，即需要更新过程模型的变化。 模拟系统提供了更容易访问和可用的模拟活动，因为过程控制网络和模拟系统中使用的过程模型与当前过程操作条件同步并且是最新的。