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242 条记录 (耗时 0.034 秒)

    Semiconductor device and method of manufacturing the same
    21.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US07144804B2

    公开(公告)日：2006-12-05

    申请号：US11022644

    申请日：2004-12-28

    申请人： Gaku Minamihaba ,  Dai Fukushima ,  Yoshikuni Tateyama ,  Hiroyuki Yano

    发明人： Gaku Minamihaba ,  Dai Fukushima ,  Yoshikuni Tateyama ,  Hiroyuki Yano

    IPC分类号： H01L21/4763

    CPC分类号： H01L23/5222 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device comprises a semiconductor substrate, an interlayer insulating film including a first insulating film formed above the substrate and having a relative dielectric constant smaller than 2.5 and a second insulating film formed to cover the first insulating film and having a relative dielectric constant larger than that of the first insulating film, and a buried wiring formed within the interlayer insulating film. A bottom portion of the second insulating film is buried in the first insulating film at a number of points.

    摘要翻译： 一种半导体器件，包括半导体衬底，层间绝缘膜，该层间绝缘膜包括形成在衬底上方的相对介电常数小于2.5的第一绝缘膜和形成为覆盖第一绝缘膜并且具有大于 第一绝缘膜，以及形成在层间绝缘膜内的掩埋布线。 第二绝缘膜的底部以多个点埋在第一绝缘膜中。

    Method of making semiconductor device by polishing with intermediate clean polishing
    22.
    发明授权
    Method of making semiconductor device by polishing with intermediate clean polishing 有权
    通过中间清洁抛光抛光制造半导体器件的方法

    公开(公告)号：US06984582B2

    公开(公告)日：2006-01-10

    申请号：US10730902

    申请日：2003-12-10

    申请人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano ,  Yoshikuni Tateyama

    发明人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano ,  Yoshikuni Tateyama

    IPC分类号： H01L21/44

    CPC分类号： H01L21/02074 ,  H01L21/3212 ,  H01L21/7684

    摘要： A polishing method comprises supplying a polishing liquid to an upper portion of a film to be polished to carry out first polishing, the film being provided on a layer having a groove with a predetermined pattern so as to be filled therewith, after the first polishing, polishing the film to carry out clean polishing while supplying one of distilled water and a cleaning liquid thereto, and after the clean polishing, polishing a residual portion of the film remaining outside of the groove by supplying a polishing liquid to carry out second polishing.

    摘要翻译： 抛光方法包括：将抛光液供给待研磨的膜的上部，进行第一次抛光，在第一次抛光之后，将膜设置在具有预定图案的槽以便填充的层上， 在向其中提供蒸馏水和清洁液之一的同时，对薄膜进行抛光以进行清洁抛光，并且在清洁抛光之后，通过提供抛光液来研磨残留在凹槽外侧的膜的剩余部分，以进行第二次抛光。

    Method of manufacturing semiconductor device
    24.
    发明授权
    Method of manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US07825028B2

    公开(公告)日：2010-11-02

    申请号：US12289271

    申请日：2008-10-23

    申请人： Nobuyuki Kurashima ,  Gaku Minamihaba ,  Hiroyuki Yano

    发明人： Nobuyuki Kurashima ,  Gaku Minamihaba ,  Hiroyuki Yano

    IPC分类号： H01L21/302

    CPC分类号： H01L21/02074 ,  H01L21/76826 ,  H01L21/76835 ,  H01L21/7684

    摘要： Disclosed is a method for manufacturing a semiconductor device comprising forming a hydrophobic interlayer insulating film having a relative dielectric constant of 3.5 or less above a semiconductor substrate, forming a recess in the interlayer insulating film, depositing a conductive material above the interlayer insulating film having the recess to form a conductive layer, selectively removing the conductive material deposited above the interlayer insulating film by polishing to expose a surface of the interlayer insulating film while leaving the conductive material in the recess, and subjecting the surface of the interlayer insulating film having the recess filled with the conductive material to pressure washing using a resin member and an alkaline washing liquid containing an inorganic alkali and exhibiting a pH of more than 9.

    摘要翻译： 公开了一种半导体器件的制造方法，包括在半导体衬底上形成相对介电常数为3.5以下的疏水层间绝缘膜，在层间绝缘膜中形成凹部，在具有 凹陷以形成导电层，通过抛光选择性地去除沉积在层间绝缘膜上方的导电材料，以在层间绝缘膜的表面露出，同时将导电材料留在凹槽中，并对具有凹陷的层间绝缘膜的表面进行 填充导电材料以使用树脂构件和含有无机碱的碱性洗涤液进行压力洗涤并显示pH大于9。

    Method of manufacturing semiconductor device
    26.
    发明申请
    Method of manufacturing semiconductor device 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20050218008A1

    公开(公告)日：2005-10-06

    申请号：US11051624

    申请日：2005-01-27

    申请人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano ,  Nobuyuki Kurashima

    发明人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano ,  Nobuyuki Kurashima

    IPC分类号： B24B37/00 ,  C25D7/12 ,  H01L21/00 ,  H01L21/02 ,  H01L21/304 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/768

    CPC分类号： H01L21/6723 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/67219

    摘要： Disclosed is a method for manufacturing a semiconductor device, comprising depositing an electrically conductive film on an insulating film formed above a semiconductor substrate and having a recessed portion, polishing the surface of the electrically conductive film constituting a processing surface with an alkaline slurry on a polishing cloth to expose the surface of the insulating film to the outside while leaving the electrically conductive film selectively within the recessed portion of the insulating film, treating the processing surface, in which the surface of the insulating film is exposed to the outside by the polishing treatment with the alkaline slurry, with a deionized water and, then, with an acidic washing solution so as to render the processing surface acidic, and transferring the semiconductor substrate from the position on the polishing cloth into a washing unit while keeping the processing surface acidic.

    摘要翻译： 公开了一种制造半导体器件的方法，包括在形成于半导体衬底上的绝缘膜上沉积导电膜并具有凹陷部分，在抛光时用碱性浆料抛光构成处理表面的导电膜的表面 布将绝缘膜的表面露出到外部，同时将导电膜选择性地留在绝缘膜的凹陷部分内，通过抛光处理处理绝缘膜的表面暴露于外部的处理表面 用碱性浆料，用去离子水，然后用酸性洗涤溶液使处理表面呈酸性，并将半导体衬底从抛光布上的位置转移到洗涤单元中，同时保持处理表面为酸性。

    POST-CMP TREATING LIQUID AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME
    29.
    发明申请
    POST-CMP TREATING LIQUID AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
    使用其的半导体器件的后CMP处理液体和制造方法

    公开(公告)号：US20100093585A1

    公开(公告)日：2010-04-15

    申请号：US12638607

    申请日：2009-12-15

    申请人： Nobuyuki Kurashima ,  Gaku Minamihaba ,  Hiroyuki Yano

    发明人： Nobuyuki Kurashima ,  Gaku Minamihaba ,  Hiroyuki Yano

    IPC分类号： C11D1/74

    CPC分类号： H01L21/02074 ,  C11D1/22 ,  C11D3/30 ,  C11D3/3765 ,  C11D11/0047

    摘要： A post CMP treating liquid is provided, which includes water, resin particles having, on their surfaces, carboxylic group and sulfonyl group, and a primary particle diameter ranging from 10 to 60 nm, a first surfactant having carboxylic group, a second surfactant having sulfonyl group, and tetramethyl ammonium hydroxide. The resin particles are incorporated at a concentration ranging from 0.01 to 1 wt %. The treating liquid has a pH ranging from 4 to 9, and exhibits a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.

    摘要翻译： 提供后CMP处理液，其包括水，其表面上具有羧基和磺酰基，一次粒径为10至60nm的树脂颗粒，具有羧基的第一表面活性剂，具有磺酰基的第二表面活性剂 基团和四甲基氢氧化铵。 树脂颗粒以0.01至1重量％的浓度掺入。 处理液的pH为4〜9，并且以10nm / min以下的速度显示绝缘膜和导电膜的抛光速度。

    Method of manufacturing semiconductor device
    30.
    发明申请
    Method of manufacturing semiconductor device 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20060012047A1

    公开(公告)日：2006-01-19

    申请号：US11142235

    申请日：2005-06-02

    申请人： Nobuyuki Kurashima ,  Gaku Minamihaba ,  Hiroyuki Yano

    发明人： Nobuyuki Kurashima ,  Gaku Minamihaba ,  Hiroyuki Yano

    IPC分类号： H01L23/52

    CPC分类号： H01L21/02074 ,  H01L21/76826 ,  H01L21/76835 ,  H01L21/7684

    摘要： Disclosed is a method for manufacturing a semiconductor device comprising forming a hydrophobic interlayer insulating film having a relative dielectric constant of 3.5 or less above a semiconductor substrate, forming a recess in the interlayer insulating film, depositing a conductive material above the interlayer insulating film having the recess to form a conductive layer, selectively removing the conductive material deposited above the interlayer insulating film by polishing to expose a surface of the interlayer insulating film while leaving the conductive material in the recess, and subjecting the surface of the interlayer insulating film having the recess filled with the conductive material to pressure washing using a resin member and an alkaline washing liquid containing an inorganic alkali and exhibiting a pH of more than 9.

    摘要翻译： 公开了一种半导体器件的制造方法，包括在半导体衬底上形成相对介电常数为3.5以下的疏水层间绝缘膜，在层间绝缘膜中形成凹部，在具有 凹陷以形成导电层，通过抛光选择性地去除沉积在层间绝缘膜上方的导电材料，以在层间绝缘膜的表面露出，同时将导电材料留在凹槽中，并对具有凹陷的层间绝缘膜的表面进行 填充导电材料以使用树脂构件和含有无机碱的碱性洗涤液进行压力洗涤并显示pH大于9。