公开(公告)号：US20110042684A1

公开(公告)日：2011-02-24

申请号：US12988324

申请日：2009-04-14

申请人： Keisuke Tanizaki ,  Naho Mizuhara ,  Michimasa Miyanaga ,  Issei Satoh ,  Hideaki Nakahata ,  Yoshiyuki Yamamoto

发明人： Keisuke Tanizaki ,  Naho Mizuhara ,  Michimasa Miyanaga ,  Issei Satoh ,  Hideaki Nakahata ,  Yoshiyuki Yamamoto

IPC分类号： H01L29/20 ,  C30B23/00

CPC分类号： C30B23/002 ,  C30B23/025 ,  C30B29/403

摘要： Affords an AlN crystal growth method, and an AlN laminate, wherein AlN of favorable crystalline quality is grown. The AlN crystal growth method is provided with the following steps. To begin with, a source material (17) containing AlN is prepared. A heterosubstrate (11), having a major surface (11a), is prepared. The source material (17) is sublimed to grow AlN crystal so as to cover the major surface (11a) of the heterosubstrate (11), whereby a first layer (12) with a flat face (12a) is formed. The source material (17) is sublimed to form onto the face (12a) of the first layer (12) a second layer (13) made of AlN. The second layer (13) is formed at a higher temperature than is the first layer (12).

摘要翻译： 提供AlN晶体生长方法和AlN层压体，其中生长有利的结晶质量的AlN。 AlN晶体生长方法具有以下步骤。 首先，准备含有AlN的原料（17）。 准备具有主表面（11a）的异基底（11）。 源材料（17）升华以生长AlN晶体以覆盖杂质衬底（11）的主表面（11a），由此形成具有平坦面（12a）的第一层（12）。 源材料（17）升华以形成第一层（12）的由AlN制成的第二层（13）的表面（12a）上。 第二层（13）形成在比第一层（12）更高的温度。

公开(公告)号：US20060213428A1

公开(公告)日：2006-09-28

申请号：US11390333

申请日：2006-03-28

申请人： Kiichi Meguro ,  Keisuke Tanizaki ,  Akihiko Namba ,  Yoshiyuki Yamamoto ,  Takahiro Imai

发明人： Kiichi Meguro ,  Keisuke Tanizaki ,  Akihiko Namba ,  Yoshiyuki Yamamoto ,  Takahiro Imai

IPC分类号： C30B25/00

CPC分类号： C30B25/105 ,  C30B25/02 ,  C30B25/20 ,  C30B29/04 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02645

摘要： The present invention provides a manufacturing method for a large-scale diamond substrate and a substrate produced by the method suitable for semiconductor lithography processing and large-scale optical parts, semiconductor materials, thermal-release substrate, semiconductor wafer processing, and back-feed devices, and others. The manufacturing method for a diamond substrate of the present invention comprises: the mounting step of preparing a substrate having a main face comprising a first region which is a concave and having a second region which surrounds the first region, and mounting, on the first region, a single crystalline diamond seed substrate having a plate thickness thicker than the concave depth of the first region; a connecting step of forming a CVD diamond layer from the single crystalline diamond seed substrate using a chemical vapor deposition, and mutually connecting by forming a CVD diamond layer on the second region at the same time; and a polishing step of polishing to substantially flatten both the CVD diamond layers on the single crystalline diamond seed substrate and on the second region by mechanically polishing.

摘要翻译： 本发明提供了通过适用于半导体光刻处理的方法制造的大规模金刚石基板和基板的制造方法以及大型光学部件，半导体材料，热释放基板，半导体晶片处理和反馈装置 ， 和别的。 本发明的金刚石基板的制造方法包括：准备基板的安装步骤，所述基板具有主面，所述主面包括第一区域，所述第一区域是凹形的并且具有围绕所述第一区域的第二区域，并且安装在所述第一区域 ，具有厚于所述第一区域的凹入深度的板厚度的单晶金刚石种子基板; 使用化学气相沉积从所述单晶金刚石种子基板形成CVD金刚石层并且通过在所述第二区域上同时形成CVD金刚石层来相互连接的连接步骤; 以及抛光步骤，通过机械抛光在单晶金刚石种子基底上和第二区域上基本上平坦化CVD金刚石层。

公开(公告)号：US07390695B2

公开(公告)日：2008-06-24

申请号：US11390333

申请日：2006-03-28

申请人： Kiichi Meguro ,  Keisuke Tanizaki ,  Akihiko Namba ,  Yoshiyuki Yamamoto ,  Takahiro Imai

发明人： Kiichi Meguro ,  Keisuke Tanizaki ,  Akihiko Namba ,  Yoshiyuki Yamamoto ,  Takahiro Imai

IPC分类号： H01L21/00

CPC分类号： C30B25/105 ,  C30B25/02 ,  C30B25/20 ,  C30B29/04 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02645

摘要： A manufacturing method for a large-scale diamond substrate and the produced substrate that is suitable for semiconductor lithography processing and large-scale optical parts, semiconductor materials, thermal-release substrate, semiconductor wafer processing, back-feed devices, and others. The manufacturing method of the present invention includes: preparing a substrate having a main face including a first region which is a concave and a second region which surrounds the first region, and mounting, on the first region, a single crystalline diamond seed substrate having a plate thickness thicker than the concave depth of the first region; forming a CVD diamond layer from the single crystalline diamond seed substrate using a chemical vapor deposition, and mutually connecting by forming a CVD diamond layer on the second region at the same time; and polishing to substantially flatten both the CVD diamond layers and on the second region by mechanically polishing.

摘要翻译： 适用于半导体光刻处理的大规模金刚石基板和所制造的基板的制造方法以及大型光学部件，半导体材料，热释放基板，半导体晶片加工，反馈装置等。 本发明的制造方法包括：准备具有包括第一区域的第一区域的主面和包围第一区域的第二区域的基板，以及在第一区域上安装具有第一区域的单晶金刚石种子基板 板厚度比第一区域的凹深更厚; 使用化学气相沉积从所述单晶金刚石种子基板形成CVD金刚石层，并且通过在所述第二区域上同时形成CVD金刚石层来相互连接; 并通过机械研磨抛光以使CVD金刚石层和第二区域基本平坦化。