利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

36 条记录 (耗时 0.02 秒)

    Method of Growing AlN Crystals, and AlN Laminate
    6.
    发明申请
    Method of Growing AlN Crystals, and AlN Laminate 审中-公开
    生长AlN晶体和AlN层压板的方法

    公开(公告)号：US20110042684A1

    公开(公告)日：2011-02-24

    申请号：US12988324

    申请日：2009-04-14

    申请人： Keisuke Tanizaki ,  Naho Mizuhara ,  Michimasa Miyanaga ,  Issei Satoh ,  Hideaki Nakahata ,  Yoshiyuki Yamamoto

    发明人： Keisuke Tanizaki ,  Naho Mizuhara ,  Michimasa Miyanaga ,  Issei Satoh ,  Hideaki Nakahata ,  Yoshiyuki Yamamoto

    IPC分类号： H01L29/20 ,  C30B23/00

    CPC分类号： C30B23/002 ,  C30B23/025 ,  C30B29/403

    摘要： Affords an AlN crystal growth method, and an AlN laminate, wherein AlN of favorable crystalline quality is grown. The AlN crystal growth method is provided with the following steps. To begin with, a source material (17) containing AlN is prepared. A heterosubstrate (11), having a major surface (11a), is prepared. The source material (17) is sublimed to grow AlN crystal so as to cover the major surface (11a) of the heterosubstrate (11), whereby a first layer (12) with a flat face (12a) is formed. The source material (17) is sublimed to form onto the face (12a) of the first layer (12) a second layer (13) made of AlN. The second layer (13) is formed at a higher temperature than is the first layer (12).

    摘要翻译： 提供AlN晶体生长方法和AlN层压体，其中生长有利的结晶质量的AlN。 AlN晶体生长方法具有以下步骤。 首先，准备含有AlN的原料（17）。 准备具有主表面（11a）的异基底（11）。 源材料（17）升华以生长AlN晶体以覆盖杂质衬底（11）的主表面（11a），由此形成具有平坦面（12a）的第一层（12）。 源材料（17）升华以形成第一层（12）的由AlN制成的第二层（13）的表面（12a）上。 第二层（13）形成在比第一层（12）更高的温度。

    AlN Crystal and Method of Its Growth
    8.
    发明申请
    AlN Crystal and Method of Its Growth 审中-公开
    AlN晶体及其生长方法

    公开(公告)号：US20100242833A1

    公开(公告)日：2010-09-30

    申请号：US12524575

    申请日：2008-11-13

    申请人： Issei Satoh ,  Naho Mizuhara ,  Keisuke Tanizaki ,  Michimasa Miyanaga ,  Hideaki Nakahata

    发明人： Issei Satoh ,  Naho Mizuhara ,  Keisuke Tanizaki ,  Michimasa Miyanaga ,  Hideaki Nakahata

    IPC分类号： C30B23/02

    CPC分类号： C30B29/403 ,  C30B23/00 ,  C30B23/025 ,  C30B25/00 ,  C30B25/18

    摘要： The present invention makes available an AlN crystal growth method enabling large-area, thick AlN crystal to be stably grown. An AlN crystal growth method of the present invention is provided with a step of preparing an SiC substrate (4) having a major face (4m) with a 0 cm−2 density of micropipes (4mp) having tubal diameters of down to 1000 μm, and a not greater than 0.1 cm−2 density of micropipes (4mp) having tubal diameters of between 100 μm and less than 1000 μm; and a step of growing AlN crystal (5) onto the major face (4m) by vapor-phase deposition.

    摘要翻译： 本发明提供能够稳定生长大面积厚AlN晶体的AlN晶体生长方法。 本发明的AlN晶体生长方法具有如下步骤：制备具有0cm -2密度的具有至少1000μm的输卵管直径的微管（4mp）的主面（4m）的SiC衬底（4） 和不大于0.1cm -2密度的具有100μm至小于1000μm的输卵管直径的微管（4mp）; 以及通过气相沉积将AlN晶体（5）生长到主面（4m）上的步骤。

    Compound semiconductor single-crystal manufacturing device and manufacturing method
    10.
    发明授权
    Compound semiconductor single-crystal manufacturing device and manufacturing method 有权
    复合半导体单晶制造装置及其制造方法

    公开(公告)号：US08591653B2

    公开(公告)日：2013-11-26

    申请号：US12668426

    申请日：2009-03-06

    申请人： Issei Satoh ,  Naho Mizuhara ,  Keisuke Tanizaki ,  Michimasa Miyanaga ,  Takashi Sakurada ,  Hideaki Nakahata

    发明人： Issei Satoh ,  Naho Mizuhara ,  Keisuke Tanizaki ,  Michimasa Miyanaga ,  Takashi Sakurada ,  Hideaki Nakahata

    IPC分类号： C30B21/02

    CPC分类号： C30B23/066 ,  C30B29/403 ,  H01L21/02378 ,  H01L21/0254

    摘要： A compound semiconductor single-crystal manufacturing device (1) is furnished with: a laser light source (6) making it possible to sublime a source material by directing a laser beam onto the material; a reaction vessel (2) having a laser entry window (5) through which the laser beam output from the laser light source (6) can be transmitted to introduce the beam into the vessel interior, and that is capable of retaining a starting substrate (3) where sublimed source material is recrystallized; and a heater (7) making it possible to heat the starting substrate (3). The laser beam is shone on, to heat and thereby sublime, the source material within the reaction vessel (2), and compound semiconductor single crystal is grown by recrystallizing the sublimed source material onto the starting substrate (3); afterwards the laser beam is employed to separate the compound semiconductor single crystal from the starting substrate (3).

    摘要翻译： 化合物半导体单晶制造装置（1）具有：激光光源（6），其可以通过将激光束引导到材料上而使源材料升华; 具有激光入口窗口（5）的反应容器（2），从激光光源（6）输出的激光束可以通过激光入口窗口（5）传输，以将光束引入容器内部，并且能够保持起始衬底（ 3）升华源材料重结晶; 和加热器（7），使加热起始衬底（3）成为可能。 激光束照射在反应容器（2）内的源材料上，从而升华，通过将升华的源材料再结晶到起始衬底（3）上来生长化合物半导体单晶; 之后使用激光束将化合物半导体单晶与起始衬底（3）分离。