公开(公告)号：US06359384B1

公开(公告)日：2002-03-19

申请号：US09117144

申请日：1998-07-24

申请人： Kenji Nakaya ,  Isamu Kobori ,  Masami Mori ,  Kazutoshi Ohisa ,  Michio Arai

发明人： Kenji Nakaya ,  Isamu Kobori ,  Masami Mori ,  Kazutoshi Ohisa ,  Michio Arai

IPC分类号： H05B3326

CPC分类号： H05B33/26 ,  H01L51/5221

摘要： The invention provides an organic EL device comprising a hole injecting electrode, and at least one organic layer disposed between the electrodes, wherein the electron injecting electrode is comprised of an AlLi alloy containing 0.4-14 at % of lithium deposited by a sputtering process. This improves the film formability and adhesion at the interface between the electron injecting electrode and the organic layer, realizing an organic EL device featuring a high luminance, high efficiency, long lifetime, and high display quality.

摘要翻译： 本发明提供一种包括空穴注入电极和设置在电极之间的至少一个有机层的有机EL器件，其中电子注入电极由含有通过溅射工艺沉积的锂的0.4-14at％的AlLi合金构成。 这提高了电子注入电极和有机层之间的界面处的成膜性和粘附性，实现了具有高亮度，高效率，长寿命和高显示质量的有机EL器件。

公开(公告)号：US06172458B2

公开(公告)日：2001-01-09

申请号：US09066775

申请日：1998-04-27

申请人： Kenji Nakaya ,  Isamu Kobori ,  Masami Mori ,  Kazutoshi Ohisa ,  Michio Arai

发明人： Kenji Nakaya ,  Isamu Kobori ,  Masami Mori ,  Kazutoshi Ohisa ,  Michio Arai

IPC分类号： H05B3326

CPC分类号： H05B33/10 ,  H01L51/5221 ,  H05B33/26

摘要： An organic electroluminescent light emitting device comprises a hole injecting electrode, an electron injecting electrode and at least one organic layer between said electrodes. The electron injecting electrode is a film of an AlLi alloy formed by a sputtering technique. The AlLi alloy comprises 0.1 to 20 at % of lithium and contains as a subordinate component at least one of Cu, Mg and Zr in an amount of Cu: ≦10 wt % Mg: ≦5 wt % Zr: ≦0.5 wt % per the total sum of aluminum and lithium.

摘要翻译： 有机电致发光器件包括空穴注入电极，电子注入电极和所述电极之间的至少一个有机层。 电子注入电极是通过溅射技术形成的AlLi合金的膜。 AlLi合金含有0.1〜20原子％的锂，作为下列成分含有Cu，Mg，Zr中的至少一种Cu：<= 10重量％Mg：<= 5重量％Zr：<= 0.5重量％ 铝和锂的总和。

公开(公告)号：US6118212A

公开(公告)日：2000-09-12

申请号：US79286

申请日：1998-05-15

申请人： Kenji Nakaya ,  Isamu Kobori ,  Masami Mori ,  Kazutoshi Ohisa ,  Michio Arai

发明人： Kenji Nakaya ,  Isamu Kobori ,  Masami Mori ,  Kazutoshi Ohisa ,  Michio Arai

IPC分类号： H05B33/26 ,  H01B1/16 ,  H01L51/50 ,  H01L51/52 ,  H05B33/12

CPC分类号： H01L51/5221 ,  Y10S428/917

摘要： An organic EL device of the invention comprises a hole injecting electrode, an electron injecting electrode and at least one organic layer interleaved between them. The electron injecting electrode is a film of an aluminum lithium alloy formed by a sputtering technique and comprising 0.4 to 14 at % of lithium. The electron injecting electrode further includes on a side of the electron injecting electrode that is not opposite to the organic layer a protective electrode comprising at least one of aluminum, aluminum and a transition metal except titanium, titanium, and titanium nitride.

摘要翻译： 本发明的有机EL元件包括空穴注入电极，电子注入电极和在它们之间交错的至少一个有机层。 电子注入电极是通过溅射技术形成的包含0.4〜14at％的锂的铝锂合金的膜。 电子注入电极还包括在电子注入电极的与有机层相反的一侧，包括除了钛，钛和氮化钛之外的铝，铝和过渡金属中的至少一种的保护电极。

公开(公告)号：US5743967A

公开(公告)日：1998-04-28

申请号：US678592

申请日：1996-07-11

申请人： Isamu Kobori ,  Michio Arai

发明人： Isamu Kobori ,  Michio Arai

IPC分类号： C23C16/458 ,  C23C16/00

CPC分类号： C23C16/4585

摘要： There is disclosed a low-pressure CVD process which uses active gases and which provides improved uniformity of the film thickness distribution across the substrate while maintaining high throughput. At least two substrates are stacked at a given spacing inside a reaction vessel. Films are to be formed over the substrates. Annular corrective frames are mounted between the successive substrates and opposite to peripheral portions of the substrates.

摘要翻译： 公开了一种使用活性气体的低压CVD工艺，并且其在保持高通量的同时提供了跨衬底的膜厚度分布的改进的均匀性。 至少两个基板在反应容器内以给定的间隔堆叠。 薄膜将形成在基材上。 环形校正框架安装在连续的衬底之间并且与衬底的周边部分相对。

公开(公告)号：US5767529A

公开(公告)日：1998-06-16

申请号：US623506

申请日：1996-03-28

申请人： Isamu Kobori ,  Michio Arai

发明人： Isamu Kobori ,  Michio Arai

IPC分类号： H01L21/324 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L29/76 ,  H01L29/04 ,  H01L27/01

CPC分类号： H01L21/2022 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/78675 ,  H01L21/2026

摘要： A thin-film transistor comprising an active silicon pattern which is formed of a plurality of island-like regions arranged in parallel to each other, the island-like regions being formed of a polycrystal silicon thin film and each having a plane area of 1000 .mu.m.sup.2 or less.

摘要翻译： 一种薄膜晶体管，包括由多个彼此平行排列的岛状区域形成的活性硅图案，所述岛状区域由多晶硅薄膜形成，并且各自具有1000μm的平面面积 m2以下。

公开(公告)号：US5565691A

公开(公告)日：1996-10-15

申请号：US451752

申请日：1995-05-26

申请人： Michio Arai ,  Isamu Kobori

发明人： Michio Arai ,  Isamu Kobori

IPC分类号： H01L21/205 ,  H01L21/20 ,  H01L21/336 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L27/12 ,  H01L29/36

CPC分类号： H01L21/0242 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78666

摘要： In a thin film semiconductor device having a substrate (1), an active layer (3, 6, 9), a gate insulation layer (4), and a gate electrode (5), the active layer is produced through the steps of producing an amorphous silicon layer on said substrate through a CVD process by using polysilane Si.sub.n H.sub.2(n+1), n is an integer, with added chlorine gas, and effecting solid phase growth on to said amorphous silicon layer. The addition of chlorine in producing the amorphous silicon layer makes it possible to produce the amorphous silicon layer at a lower temperature and at a rapid growth rate. A thin film semiconductor device thus produced has the advantages of high mobility and low threshold voltage.

摘要翻译： 在具有基板（1），有源层（3,6,9），栅极绝缘层（4）和栅电极（5）的薄膜半导体器件中，通过以下步骤制造有源层： 通过使用聚硅烷SinH 2（n + 1）的CVD工艺在所述衬底上的非晶硅层，n是具有添加的氯气的整数，并且在所述非晶硅层上进行固相生长。 在制造非晶硅层中添加氯使得可以在较低温度和快速生长速率下生产非晶硅层。 这样制造的薄膜半导体器件具有迁移率高，阈值电压低的优点。

公开(公告)号：US20050077518A1

公开(公告)日：2005-04-14

申请号：US10623581

申请日：2003-07-22

申请人： Isamu Kobori ,  Michio Arai

发明人： Isamu Kobori ,  Michio Arai

IPC分类号： H01L21/324 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L29/76

CPC分类号： H01L21/02667 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/78675

摘要： A method of manufacturing a semiconductor characterized in that, in polycrystallizing an amorphous silicon thin film formed on a substrate through an annealing process, the amorphous silicon thin film has a plane area of 1000 μm2 or less. A thin-film transistor characterized by comprising an active silicon film which is formed, of a plurality of island-like regions arranged in parallel to each other, the island-like regions being formed of a polycrystal silicon thin film having a plane area of 1000 μm2 or less. A method of manufacturing a thin-film transistor comprising the steps of: forming an amorphous silicon thin film on a substrate; processing the amorphous silicon thin film into a plurality of island-like regions having a plane area of 1000 μm2 or less; polycrystallizing an amorphous silicon thin film that forms the island-like regions through an annealing process; and forming a thin-film transistor having at least one of the plurality of island-like regions as an active silicon layer.

摘要翻译： 一种制造半导体的方法，其特征在于，通过退火处理将形成在基板上的非晶硅薄膜多晶化，所述非晶硅薄膜的平面面积为1000μm2以下。 一种薄膜晶体管，其特征在于包括形成有彼此平行布置的多个岛状区域的活性硅膜，所述岛状区域由平面积为1000的多晶硅薄膜形成 mum <2>以下。 一种制造薄膜晶体管的方法，包括以下步骤：在衬底上形成非晶硅薄膜; 将非晶硅薄膜加工成平面积为1000μm以下的多个岛状区域; 通过退火处理形成岛状区域的非晶硅薄膜多晶化; 以及形成具有所述多个岛状区域中的至少一个作为有源硅层的薄膜晶体管。

公开(公告)号：US06596572B1

公开(公告)日：2003-07-22

申请号：US09016999

申请日：1998-02-02

申请人： Isamu Kobori ,  Michio Arai

发明人： Isamu Kobori ,  Michio Arai

IPC分类号： H01L21324

CPC分类号： H01L21/02667 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/78675

摘要： A method of manufacturing a semiconductor characterized in that, in polycrystallizing an amorphous silicon thin film formed on a substrate through an annealing process, the amorphous silicon thin film has a plane area of 1000 &mgr;m2 or less. A thin-film transistor characterized by comprising an active silicon film which is formed of a plurality of island-like regions arranged in parallel to each other, each of the island-like regions being formed of a polycrystal silicon thin film having a plane area of 1000 &mgr;m2 or less. A method of manufacturing a thin-film transistor comprising the steps of: forming an amorphous silicon thin film on a substrate; processing the amorphous silicon thin film into a plurality of island-like regions having a plane area of 1000 &mgr;m2 or less; polycrystallizing an amorphous silicon thin film that forms the island-like regions through an annealing process; and forming a thin-film transistor having at least one of the plurality of island-like regions each as an active silicon layer.

摘要翻译： 一种制造半导体的方法，其特征在于，通过退火处理将形成在基板上的非晶硅薄膜多晶化，所述非晶硅薄膜的面积为1000m2以下。 一种薄膜晶体管，其特征在于包括由彼此平行布置的多个岛状区域形成的活性硅膜，每个所述岛状区域由多晶硅薄膜形成，所述多晶硅薄膜的平面面积 1000 mum2以下。 一种制造薄膜晶体管的方法，包括以下步骤：在衬底上形成非晶硅薄膜; 将非晶硅薄膜加工成平面积为1000m2以下的多个岛状区域; 通过退火处理形成岛状区域的非晶硅薄膜多晶化; 以及形成具有多个岛状区域中的至少一个作为有源硅层的薄膜晶体管。

公开(公告)号：US5574293A

公开(公告)日：1996-11-12

申请号：US343492

申请日：1994-11-22

申请人： Michio Arai ,  Takashi Inushima ,  Mitsufumi Codama ,  Kazushi Sugiura ,  Ichiro Takayama ,  Isamu Kobori ,  Yukio Yamauchi ,  Naoya Sakamoto

发明人： Michio Arai ,  Takashi Inushima ,  Mitsufumi Codama ,  Kazushi Sugiura ,  Ichiro Takayama ,  Isamu Kobori ,  Yukio Yamauchi ,  Naoya Sakamoto

IPC分类号： H01L21/84 ,  H01L27/12 ,  H01L27/146 ,  H01L31/113 ,  H01L31/062

CPC分类号： H01L27/14643 ,  H01L21/84 ,  H01L27/1237 ,  H01L31/1133

摘要： A substrate (1) has a surface covered with an insulation layer (2), on which an active layer (3') made of non-single crystal silicon through thin film technique is provided. A gate electrode layer (5') is partially provided on said active layer through a gate insulation layer (4'). Said active layer (3') is subject to injection of P-type or N-type impurities to provide an image sensor of MOS structure. Bias potential is applied to a gate electrode so that a circuit between a source and a drain is in an On state, so that input light through said substrate or said gate electrode is applied to said active layer, and electrical output depending upon said input light is obtained from said source electrode or said drain electrode. Other MOS transistors for switching element and/or shift registers for operating said image sensor are provided on said substrate (1). Said active layer (3') is obtained by crystallizing said amorphous silicon layer through a laser anneal process or a high temperature anneal process, and hydrogenation process, and the trap density of said active layer is less than 5.times.10.sup.11 /cm.sup.2. Optical response time is short, less than 500 .mu.sec, so, high speed operation ten times as high as that of a prior image sensor is possible.

摘要翻译： PCT No.PCT / JP94 / 00452 Sec。 371日期：1994年11月22日 102（e）日期1994年11月22日PCT 1994年3月22日PCT公布。 WO94 / 22173 PCT出版物 日期：1994年9月29日一种衬底（1）具有被绝缘层（2）覆盖的表面，其上提供由非单晶硅通过薄膜技术制成的有源层（3'）。 栅极电极层（5'）通过栅极绝缘层（4'）部分地设置在所述有源层上。 所述有源层（3'）经受注入P型或N型杂质以提供MOS结构的图像传感器。 将偏置电位施加到栅电极，使得源极和漏极之间的电路处于导通状态，使得通过所述衬底或所述栅电极的输入光被施加到所述有源层，并且根据所述输入光输出电输出 从所述源电极或所述漏电极获得。 用于操作所述图像传感器的用于开关元件和/或移位寄存器的其它MOS晶体管设置在所述基板（1）上。 所述有源层（3'）是通过激光退火工艺或高温退火工艺和氢化工艺使所述非晶硅层结晶而获得的，并且所述有源层的陷阱密度小于5×10 11 / cm 2。 光学响应时间短，小于500μs，因此可以实现高于现有图像传感器的10倍的高速度运行。

公开(公告)号：US07576483B2

公开(公告)日：2009-08-18

申请号：US11065271

申请日：2005-02-24

申请人： Isamu Kobori

发明人： Isamu Kobori

IPC分类号： H01J1/62 ,  H01J63/04

CPC分类号： H01L27/322 ,  H01L27/3209 ,  H01L51/5036 ,  H01L51/524 ,  H01L2251/5315

摘要： The invention provides a display device capable of improving color separation characteristics by using a color filter having high transmittance. An organic light emitting device emits blue light, red light, and green light, and the emission intensity of the green light is relatively lower than those of the blue light and the red light. A green fluorescence conversion layer for absorbing a blue wavelength component and emits green light is provided between the organic light emitting device and a green filter layer. Color purity of blue and red is improved by decreasing a green light emitting component causing decreasing color purity when blue and red are separated by a color filter, and by using the color filter having high transmittance and low density. The decreased green light emitting component is complemented with the green fluorescence conversion layer, chromaticity is adjusted by a green filter layer, and thereby light emitting efficiency and color reproducibility are improved.

摘要翻译： 本发明提供能够通过使用具有高透射率的滤色器来改善色分离特性的显示装置。 有机发光装置发出蓝光，红光和绿光，绿光的发光强度比蓝光和红光的发光强度低。 在有机发光器件和绿色滤光层之间设置用于吸收蓝色波长成分并发出绿色光的绿色荧光转换层。 通过减少由滤色器分离蓝色和红色而导致色纯度降低的绿色发光成分，并且通过使用具有高透射率和低密度的滤色片来改善蓝色和红色的色纯度。 用绿色荧光转换层补充减少的绿色发光成分，通过绿色滤光层调整色度，提高发光效率和色彩再现性。