公开(公告)号：US11594432B2

公开(公告)日：2023-02-28

申请号：US17226259

申请日：2021-04-09

Applicant: Micron Technology, Inc.

Inventor： Jeremy E. Minnich ,  Benjamin L. McClain ,  Travis M. Jensen

IPC: H01L21/67 ,  H01L21/683 ,  H05K13/00 ,  B28D5/00 ,  H05K13/04

Abstract: Systems and methods for releasing semiconductor dies during pick and place operations are disclosed. In one embodiment, a system for handling semiconductor dies comprises a support member positioned to carry at least one semiconductor die releasably attached to a support substrate. The system further includes a picking device having a pick head coupleable to a vacuum source and positioned to releasably attach to the semiconductor die at a pick station. The system still further incudes a cooling member coupleable to a cold fluid source and configured to direct a cold fluid supplied by the cold fluid source toward the support substrate at the pick station. The cold fluid cools a die attach region of the substrate where the semiconductor die is attached to the substrate to facilitate removal of the semiconductor die.

公开(公告)号：US11410962B2

公开(公告)日：2022-08-09

申请号：US17099625

申请日：2020-11-16

Applicant: Micron Technology, Inc.

Inventor： Wei Zhou ,  Bret K. Street ,  Benjamin L. McClain ,  Mark E. Tuttle

IPC: H01L21/00 ,  H01L23/00 ,  H01L23/48

Abstract: A thermocompression bonding (TCB) apparatus can include a wall having a height measured in a first direction and configured to be positioned between a first pressing surface and a second pressing surface of a semiconductor bonding apparatus. The apparatus can include a cavity at least partially surrounded by the wall, the cavity sized to receive a semiconductor substrate and a stack of semiconductor dies positioned between the semiconductor substrate and the first pressing surface, the stack of semiconductor dies and semiconductor substrate having a combined unpressed stack height as measured in the first direction. In some embodiments, the unpressed stack height is greater than the height of the wall, and the wall is configured to be contacted by the first pressing surface to limit movement of the first pressing surface toward the second pressing surface during a semiconductor bonding process.

公开(公告)号：US20210225672A1

公开(公告)日：2021-07-22

申请号：US17226259

申请日：2021-04-09

Applicant: Micron Technology, Inc.

Inventor： Jeremy E. Minnich ,  Benjamin L. McClain ,  Travis M. Jensen

IPC: H01L21/67 ,  H01L21/683 ,  H05K13/00 ,  B28D5/00

Abstract: Systems and methods for releasing semiconductor dies during pick and place operations are disclosed. In one embodiment, a system for handling semiconductor dies comprises a support member positioned to carry at least one semiconductor die releasably attached to a support substrate. The system further includes a picking device having a pick head coupleable to a vacuum source and positioned to releasably attach to the semiconductor die at a pick station. The system still further incudes a cooling member coupleable to a cold fluid source and configured to direct a cold fluid supplied by the cold fluid source toward the support substrate at the pick station. The cold fluid cools a die attach region of the substrate where the semiconductor die is attached to the substrate to facilitate removal of the semiconductor die.

公开(公告)号：US11024595B2

公开(公告)日：2021-06-01

申请号：US15625676

申请日：2017-06-16

Applicant: Micron Technology, Inc.

Inventor： Benjamin L. McClain ,  Brandon P. Wirz ,  Zhaohui Ma

IPC: H01L21/48 ,  H01L21/56 ,  H01L23/00

Abstract: A bond tip for thermocompression bonding a bottom surface includes a die contact area and a low surface energy material covering at least a portion of the bottom surface. The low surface energy material may cover substantially all of the bottom surface, or only a peripheral portion surrounding the die contact area. The die contact area may be recessed with respect to the peripheral portion a depth at least as great as a thickness of a semiconductor die to be received in the recessed die contact area. A method of thermocompression bonding is also disclosed.

公开(公告)号：US20210091037A1

公开(公告)日：2021-03-25

申请号：US17099655

申请日：2020-11-16

Applicant: Micron Technology, Inc.

Inventor： Wei Zhou ,  Bret K. Street ,  Benjamin L. McClain ,  Mark E. Tuttle

IPC: H01L23/00 ,  H01L23/48

Abstract: A thermocompression bonding (TCB) apparatus can include a wall having a height measured in a first direction and configured to be positioned between a first pressing surface and a second pressing surface of a semiconductor bonding apparatus. The apparatus can include a cavity at least partially surrounded by the wall, the cavity sized to receive a semiconductor substrate and a stack of semiconductor dies positioned between the semiconductor substrate and the first pressing surface, the stack of semiconductor dies and semiconductor substrate having a combined unpressed stack height as measured in the first direction. In some embodiments, the unpressed stack height is greater than the height of the wall, and the wall is configured to be contacted by the first pressing surface to limit movement of the first pressing surface toward the second pressing surface during a semiconductor bonding process.

公开(公告)号：US10952333B2

公开(公告)日：2021-03-16

申请号：US16707712

申请日：2019-12-09

Applicant: Micron Technology, Inc.

Inventor： Benjamin L. McClain ,  Xiao Li

IPC: H05K3/46 ,  H01L23/00 ,  H01L21/48 ,  H01L25/065 ,  H01L23/528 ,  H01L21/683 ,  H01L23/552 ,  H01L23/31

Abstract: Semiconductor devices, semiconductor device assemblies, and methods of making such semiconductor devices and semiconductor device assemblies. Material may be removed from a semiconductor device having a first thickness to obtain a second thickness and a carrier may be attached to the semiconductor device having a third thickness with the third thickness plus the second thickness substantially equaling the first thickness. The carrier has a coefficient of thermal expansion (CTE) that differs from the CTE of the semiconductor device. The addition of the carrier to the semiconductor device may change the overall warpage or CTE of a semiconductor device assembly. The semiconductor device assembly be include a redistribution layer between the semiconductor device and a substrate. A material may encapsulate the carrier and the semiconductor device. The carrier may provide electromagnetic shielding. A coating may be applied to external surface of the semiconductor device assembly to provide electromagnetic shielding.

公开(公告)号：US20210074671A1

公开(公告)日：2021-03-11

申请号：US17099625

申请日：2020-11-16

Applicant: Micron Technology, Inc.

Inventor： Wei Zhou ,  Bret K. Street ,  Benjamin L. McClain ,  Mark E. Tuttle

IPC: H01L23/00 ,  H01L23/48

Abstract: A thermocompression bonding (TCB) apparatus can include a wall having a height measured in a first direction and configured to be positioned between a first pressing surface and a second pressing surface of a semiconductor bonding apparatus. The apparatus can include a cavity at least partially surrounded by the wall, the cavity sized to receive a semiconductor substrate and a stack of semiconductor dies positioned between the semiconductor substrate and the first pressing surface, the stack of semiconductor dies and semiconductor substrate having a combined unpressed stack height as measured in the first direction. In some embodiments, the unpressed stack height is greater than the height of the wall, and the wall is configured to be contacted by the first pressing surface to limit movement of the first pressing surface toward the second pressing surface during a semiconductor bonding process.

公开(公告)号：US10548230B2

公开(公告)日：2020-01-28

申请号：US15862445

申请日：2018-01-04

Applicant: Micron Technology, Inc.

Inventor： Benjamin L. McClain ,  Xiao Li

IPC: H01L23/00 ,  H05K3/46 ,  H01L21/48 ,  H01L25/065 ,  H01L23/528 ,  H01L21/683

Abstract: Semiconductor devices, semiconductor device assemblies, and methods of making such semiconductor devices and semiconductor device assemblies. Material may be removed from a semiconductor device having a first thickness to obtain a second thickness and a carrier may be attached to the semiconductor device having a third thickness with the third thickness plus the second thickness substantially equaling the first thickness. The carrier has a coefficient of thermal expansion (CTE) that differs from the CTE of the semiconductor device. The addition of the carrier to the semiconductor device may change the overall warpage or CTE of a semiconductor device assembly. The semiconductor device assembly be include a redistribution layer between the semiconductor device and a substrate. A material may encapsulate the carrier and the semiconductor device. The carrier may provide electromagnetic shielding. A coating may be applied to external surface of the semiconductor device assembly to provide electromagnetic shielding.

公开(公告)号：US10410891B2

公开(公告)日：2019-09-10

申请号：US16020625

申请日：2018-06-27

Applicant: Micron Technology, Inc.

Inventor： Jeremy E. Minnich ,  Benjamin L. McClain ,  Travis M. Jensen

IPC: H01L21/683 ,  H01L21/67 ,  H05K13/00 ,  B28D5/00 ,  H05K13/04

Abstract: Systems and methods for releasing semiconductor dies during pick and place operations are disclosed. In one embodiment, a system for handling semiconductor dies comprises a support member positioned to carry at least one semiconductor die releasably attached to a support substrate. The system further includes a picking device having a pick head coupleable to a vacuum source and positioned to releasably attach to the semiconductor die at a pick station. The system still further includes a cooling member coupleable to a cold fluid source and configured to direct a cold fluid supplied by the cold fluid source toward the support substrate at the pick station. The cold fluid cools a die attach region of the substrate where the semiconductor die is attached to the substrate to facilitate removal of the semiconductor die.

公开(公告)号：US20190131272A1

公开(公告)日：2019-05-02

申请号：US15797900

申请日：2017-10-30

Applicant: Micron Technology, Inc.

Inventor： Brandon P. Wirz ,  Benjamin L. McClain ,  C. Alexander Ernst ,  Jeremy E. Minnich

IPC: H01L23/00

Abstract: A semiconductor device, semiconductor device assembly, and method of forming a semiconductor device assembly that includes a barrier on a pillar. The semiconductor device assembly includes a semiconductor device disposed over another semiconductor device. At least one pillar extends from one semiconductor device towards a pad on the other semiconductor device. The barrier on the exterior of the pillar may be a standoff to control a bond line between the semiconductor devices. The barrier may reduce solder bridging and may prevent reliability and electromigration issues that can result from the IMC formation between the solder and copper portions of a pillar. The barrier may help align the pillar with a pad when forming a semiconductor device assembly and may reduce misalignment due to lateral movement of the semiconductor devices. Windows or slots in the barrier may permit the expansion of solder in predetermined directions while preventing bridging in other directions.