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公开(公告)号:US11705425B2
公开(公告)日:2023-07-18
申请号:US17301843
申请日:2021-04-15
Applicant: Micron Technology, Inc.
Inventor: Benjamin L. McClain , Brandon P. Wirz , Zhaohui Ma
CPC classification number: H01L24/75 , H01L21/4853 , H01L21/563 , H01L24/27 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L24/13 , H01L24/16 , H01L24/94 , H01L2224/131 , H01L2224/13111 , H01L2224/13147 , H01L2224/16227 , H01L2224/27003 , H01L2224/2783 , H01L2224/2784 , H01L2224/27436 , H01L2224/32013 , H01L2224/32058 , H01L2224/32059 , H01L2224/32105 , H01L2224/32106 , H01L2224/32225 , H01L2224/73103 , H01L2224/73204 , H01L2224/7532 , H01L2224/75251 , H01L2224/75252 , H01L2224/75303 , H01L2224/75312 , H01L2224/75318 , H01L2224/75745 , H01L2224/8182 , H01L2224/81169 , H01L2224/81191 , H01L2224/81193 , H01L2224/81203 , H01L2224/81815 , H01L2224/81895 , H01L2224/83203 , H01L2224/83862 , H01L2224/9211 , H01L2224/9212 , H01L2224/94 , H01L2924/00012 , H01L2224/94 , H01L2224/27 , H01L2224/94 , H01L2224/11 , H01L2224/9212 , H01L2224/11 , H01L2224/27 , H01L2224/9211 , H01L2224/81 , H01L2224/83 , H01L2224/81169 , H01L2924/00014 , H01L2224/2783 , H01L2924/00012
Abstract: A bond tip for thermocompression bonding a bottom surface includes a die contact area and a low surface energy material covering at least a portion of the bottom surface. The low surface energy material may cover substantially all of the bottom surface, or only a peripheral portion surrounding the die contact area. The die contact area may be recessed with respect to the peripheral portion a depth at least as great as a thickness of a semiconductor die to be received in the recessed die contact area. A method of thermocompression bonding is also disclosed.
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公开(公告)号:US20200211999A1
公开(公告)日:2020-07-02
申请号:US16236250
申请日:2018-12-28
Applicant: Micron Technology, Inc.
Inventor: Wei Zhou , Bret K. Street , Benjamin L. McClain , Mark E. Tuttle
Abstract: A thermocompression bonding (TCB) apparatus can include a wall having a height measured in a first direction and configured to be positioned between a first pressing surface and a second pressing surface of a semiconductor bonding apparatus. The apparatus can include a cavity at least partially surrounded by the wall, the cavity sized to receive a semiconductor substrate and a stack of semiconductor dies positioned between the semiconductor substrate and the first pressing surface, the stack of semiconductor dies and semiconductor substrate having a combined unpressed stack height as measured in the first direction. In some embodiments, the unpressed stack height is greater than the height of the wall, and the wall is configured to be contacted by the first pressing surface to limit movement of the first pressing surface toward the second pressing surface during a semiconductor bonding process.
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公开(公告)号:US10090177B1
公开(公告)日:2018-10-02
申请号:US15687015
申请日:2017-08-25
Applicant: Micron Technology, Inc.
Inventor: Jeremy E. Minnich , Benjamin L. McClain , Travis M. Jensen
IPC: H01L21/67 , H01L21/683 , H05K13/00 , H05K13/04
Abstract: Systems and methods for releasing semiconductor dies during pick and place operations are disclosed. In one embodiment, a system for handling semiconductor dies comprises a support member positioned to carry at least one semiconductor die releasably attached to a support substrate. The system further includes a picking device having a pick head coupleable to a vacuum source and positioned to releasably attach to the semiconductor die at a pick station. The system still further includes a cooling member coupleable to a cold fluid source and configured to direct a cold fluid supplied by the cold fluid source toward the support substrate at the pick station. The cold fluid cools a die attach region of the substrate where the semiconductor die is attached to the substrate to facilitate removal of the semiconductor die.
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公开(公告)号:US12087720B2
公开(公告)日:2024-09-10
申请号:US17198144
申请日:2021-03-10
Applicant: Micron Technology, Inc.
Inventor: Brandon P. Wirz , Benjamin L. McClain
IPC: H01L23/00 , H01L25/00 , H01L25/065 , H01L25/16 , H01L25/18
CPC classification number: H01L24/14 , H01L24/02 , H01L24/04 , H01L24/06 , H01L24/13 , H01L24/16 , H01L24/17 , H01L25/0657 , H01L25/50 , H01L25/16 , H01L25/18 , H01L2224/02372 , H01L2224/0401 , H01L2224/05022 , H01L2224/05073 , H01L2224/05147 , H01L2224/05561 , H01L2224/05564 , H01L2224/05568 , H01L2224/05573 , H01L2224/05644 , H01L2224/05655 , H01L2224/0603 , H01L2224/06517 , H01L2224/13007 , H01L2224/13016 , H01L2224/13023 , H01L2224/13082 , H01L2224/1403 , H01L2224/14051 , H01L2224/14517 , H01L2224/16013 , H01L2224/16059 , H01L2224/16148 , H01L2224/16238 , H01L2224/17051 , H01L2224/17517 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06541 , H01L2225/06565 , H01L2225/06593 , H01L2924/1431 , H01L2924/1434 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19103 , H01L2924/19104 , H01L2924/3511 , H01L2224/94 , H01L2224/81 , H01L2224/97 , H01L2224/81
Abstract: A semiconductor device assembly is provided. The assembly includes a first package element and a second package element disposed over the first package element. The assembly further includes a plurality of die support structures between the first and second package elements, wherein each of the plurality of die support structures has a first height, a lower portion surface-mounted to the first package element and an upper portion in contact with the second package element. The assembly further includes a plurality of interconnects between the first and second package elements, wherein each of the plurality of interconnects includes a conductive pillar having a second height, a conductive pad, and a bond material with a solder joint thickness between the conductive pillar and the conductive pad. The first height is about equal to a sum of the solder joint thickness and the second height.
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公开(公告)号:US12080678B2
公开(公告)日:2024-09-03
申请号:US17881572
申请日:2022-08-04
Applicant: Micron Technology, Inc.
Inventor: Wei Zhou , Bret K. Street , Benjamin L. McClain , Mark E. Tuttle
CPC classification number: H01L24/75 , H01L23/481 , H01L24/81 , H01L24/97 , H01L2224/75317 , H01L2224/81203 , H01L2224/95091
Abstract: A thermocompression bonding (TCB) apparatus can include a wall having a height measured in a first direction and configured to be positioned between a first pressing surface and a second pressing surface of a semiconductor bonding apparatus. The apparatus can include a cavity at least partially surrounded by the wall, the cavity sized to receive a semiconductor substrate and a stack of semiconductor dies positioned between the semiconductor substrate and the first pressing surface, the stack of semiconductor dies and semiconductor substrate having a combined unpressed stack height as measured in the first direction. In some embodiments, the unpressed stack height is greater than the height of the wall, and the wall is configured to be contacted by the first pressing surface to limit movement of the first pressing surface toward the second pressing surface during a semiconductor bonding process.
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公开(公告)号:US11410963B2
公开(公告)日:2022-08-09
申请号:US17099655
申请日:2020-11-16
Applicant: Micron Technology, Inc.
Inventor: Wei Zhou , Bret K. Street , Benjamin L. McClain , Mark E. Tuttle
Abstract: A thermocompression bonding (TCB) apparatus can include a wall having a height measured in a first direction and configured to be positioned between a first pressing surface and a second pressing surface of a semiconductor bonding apparatus. The apparatus can include a cavity at least partially surrounded by the wall, the cavity sized to receive a semiconductor substrate and a stack of semiconductor dies positioned between the semiconductor substrate and the first pressing surface, the stack of semiconductor dies and semiconductor substrate having a combined unpressed stack height as measured in the first direction. In some embodiments, the unpressed stack height is greater than the height of the wall, and the wall is configured to be contacted by the first pressing surface to limit movement of the first pressing surface toward the second pressing surface during a semiconductor bonding process.
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公开(公告)号:US20210193606A1
公开(公告)日:2021-06-24
申请号:US17198144
申请日:2021-03-10
Applicant: Micron Technology, Inc.
Inventor: Brandon P. Wirz , Benjamin L. McClain
IPC: H01L23/00 , H01L25/065 , H01L25/00
Abstract: A semiconductor device assembly is provided. The assembly includes a first package element and a second package element disposed over the first package element. The assembly further includes a plurality of die support structures between the first and second package elements, wherein each of the plurality of die support structures has a first height, a lower portion surface-mounted to the first package element and an upper portion in contact with the second package element. The assembly further includes a plurality of interconnects between the first and second package elements, wherein each of the plurality of interconnects includes a conductive pillar having a second height, a conductive pad, and a bond material with a solder joint thickness between the conductive pillar and the conductive pad. The first height is about equal to a sum of the solder joint thickness and the second height.
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公开(公告)号:US10950568B2
公开(公告)日:2021-03-16
申请号:US15603327
申请日:2017-05-23
Applicant: Micron Technology, Inc.
Inventor: Brandon P. Wirz , Benjamin L. McClain
IPC: H01L23/00 , H01L25/065 , H01L25/00 , H01L25/16 , H01L25/18
Abstract: A semiconductor device assembly is provided. The assembly includes a first package element and a second package element disposed over the first package element. The assembly further includes a plurality of die support structures between the first and second package elements, wherein each of the plurality of die support structures has a first height, a lower portion surface-mounted to the first package element and an upper portion in contact with the second package element. The assembly further includes a plurality of interconnects between the first and second package elements, wherein each of the plurality of interconnects includes a conductive pillar having a second height, a conductive pad, and a bond material with a solder joint thickness between the conductive pillar and the conductive pad. The first height is about equal to a sum of the solder joint thickness and the second height.
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公开(公告)号:US20200212000A1
公开(公告)日:2020-07-02
申请号:US16236257
申请日:2018-12-28
Applicant: Micron Technology, Inc.
Inventor: Wei Zhou , Bret K. Street , Benjamin L. McClain , Mark E. Tuttle
Abstract: A thermocompression bonding (TCB) apparatus can include a wall having a height measured in a first direction and configured to be positioned between a first pressing surface and a second pressing surface of a semiconductor bonding apparatus. The apparatus can include a cavity at least partially surrounded by the wall, the cavity sized to receive a semiconductor substrate and a stack of semiconductor dies positioned between the semiconductor substrate and the first pressing surface, the stack of semiconductor dies and semiconductor substrate having a combined unpressed stack height as measured in the first direction. In some embodiments, the unpressed stack height is greater than the height of the wall, and the wall is configured to be contacted by the first pressing surface to limit movement of the first pressing surface toward the second pressing surface during a semiconductor bonding process.
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10.
公开(公告)号:US20190326142A1
公开(公告)日:2019-10-24
申请号:US16460956
申请日:2019-07-02
Applicant: Micron Technology, Inc.
Inventor: Jeremy E. Minnich , Benjamin L. McClain , Travis M. Jensen
IPC: H01L21/67 , B28D5/00 , H05K13/00 , H01L21/683
Abstract: Systems and methods for releasing semiconductor dies during pick and place operations are disclosed. In one embodiment, a system for handling semiconductor dies comprises a support member positioned to carry at least one semiconductor die releasably attached to a support substrate. The system further includes a picking device having a pick head coupleable to a vacuum source and positioned to releasably attach to the semiconductor die at a pick station. The system still further includes a cooling member coupleable to a cold fluid source and configured to direct a cold fluid supplied by the cold fluid source toward the support substrate at the pick station. The cold fluid cools a die attach region of the substrate where the semiconductor die is attached to the substrate to facilitate removal of the semiconductor die.
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