公开(公告)号：US09269900B2

公开(公告)日：2016-02-23

申请号：US14313850

申请日：2014-06-24

Applicant: Micron Technology, Inc.

Inventor： Eugene P. Marsh ,  Timothy A. Quick ,  Stefan Uhlenbrock

IPC: H01L45/00 ,  C23C16/28 ,  C23C16/30 ,  C23C16/455

CPC classification number: H01L45/144 ,  C23C16/28 ,  C23C16/305 ,  C23C16/45523 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1616 ,  H01L45/1683

Abstract: A method of forming a phase change material which having germanium and tellurium therein includes depositing a germanium-containing material over a substrate. Such material includes elemental-form germanium. A gaseous tellurium-comprising precursor is flowed to the germanium-comprising material and tellurium is removed from the gaseous precursor to react with the elemental-form germanium in the germanium-comprising material to form a germanium and tellurium-comprising compound of a phase change material over the substrate. Other implementations are disclosed.

Abstract translation: 形成其中具有锗和碲的相变材料的方法包括在基底上沉积含锗材料。 这种材料包括元素形式的锗。 将含气态碲前驱体流入含锗材料，并从气态前驱体中除去碲以与含锗材料中的元素形式的锗反应，形成含锗和碲化合物的相变材料 在基板上。 公开了其他实现。

公开(公告)号：US20150214477A1

公开(公告)日：2015-07-30

申请号：US14677571

申请日：2015-04-02

Applicant: Micron Technology, Inc.

Inventor： Timothy A. Quick ,  Eugene P. Marsh ,  Stefan Uhlenbrock ,  Chet E. Carter ,  Scott E. Sills

IPC: H01L45/00

CPC classification number: H01L45/085 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/1608 ,  H01L45/1616

Abstract: Memory cells are disclosed, which cells include a cell material and an ion-source material over the cell material. A discontinuous interfacial material is included between the cell material and the ion-source material. Also disclosed are fabrication methods and semiconductor devices including the disclosed memory cells.

Abstract translation: 公开了存储器单元，其中电池包括细胞材料和细胞材料上的离子源材料。 细胞材料和离子源材料之间包含不连续的界面材料。 还公开了包括所公开的存储单元的制造方法和半导体器件。

公开(公告)号：US20230391805A1

公开(公告)日：2023-12-07

申请号：US18327840

申请日：2023-06-01

Applicant: Micron Technology, Inc.

Inventor： Gurtej S. Sandhu ,  Sumeet C. Pandey ,  Stefan Uhlenbrock ,  John A. Smythe

IPC: C07F7/30 ,  C23C16/455 ,  C23C16/18

CPC classification number: C07F7/30 ,  C23C16/45553 ,  C23C16/18 ,  H01L21/02532

Abstract: A germanium precursor comprising a chemical formula of Ge(R1NC(R3)NR2)(R4) where each of R1, R2, R3, and R4 is independently selected from the group consisting of hydrogen, an alkyl, a substituted alkyl, an alkoxide, a substituted amide, an amine, a substituted amine, and a halogen. Methods of forming the germanium precursor and a precursor composition including the germanium precursor are also disclosed.

公开(公告)号：US10964532B2

公开(公告)日：2021-03-30

申请号：US15857920

申请日：2017-12-29

Applicant: Micron Technology, Inc.

Inventor： Sumeet C. Pandey ,  Brenda D. Kraus ,  Stefan Uhlenbrock ,  John A. Smythe ,  Timothy A. Quick

IPC: H01L21/02

Abstract: Methods of forming silicon nitride. Silicon nitride is formed on a substrate by atomic layer deposition at a temperature of less than or equal to about 275° C. The as-formed silicon nitride is exposed to a plasma. The silicon nitride may be formed as a portion of silicon nitride and at least one other portion of silicon nitride. The portion of silicon nitride and the at least one other portion of silicon nitride may be exposed to a plasma treatment. Methods of forming a semiconductor structure are also disclosed, as are semiconductor structures and silicon precursors.

公开(公告)号：US10374156B2

公开(公告)日：2019-08-06

申请号：US15333774

申请日：2016-10-25

Applicant: Micron Technology, Inc.

Inventor： Eugene P. Marsh ,  Stefan Uhlenbrock

IPC: H01L45/02 ,  H01L45/00 ,  H01L21/02

Abstract: A method of forming a metal chalcogenide material. The method comprises introducing a metal precursor and a chalcogenide precursor into a chamber, and reacting the metal precursor and the chalcogenide precursor to form a metal chalcogenide material on a substrate. The metal precursor is a carboxylate of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid. The chalcogenide precursor is a hydride, alkyl, or aryl precursor of sulfur, selenium, or tellurium or a silylhydride, silylalkyl, or silylaryl precursor of sulfur, selenium, or tellurium. Methods of forming a memory cell including the metal chalcogenide material are also disclosed, as are memory cells including the metal chalcogenide material.

公开(公告)号：US20170040533A1

公开(公告)日：2017-02-09

申请号：US15333774

申请日：2016-10-25

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Eugene P. Marsh ,  Stefan Uhlenbrock

IPC: H01L45/00

CPC classification number: H01L45/141 ,  H01L21/02175 ,  H01L21/0228 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/144 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1616

Abstract: A method of forming a metal chalcogenide material. The method comprises introducing a metal precursor and a chalcogenide precursor into a chamber, and reacting the metal precursor and the chalcogenide precursor to form a metal chalcogenide material on a substrate. The metal precursor is a carboxylate of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid. The chalcogenide precursor is a hydride, alkyl, or aryl precursor of sulfur, selenium, or tellurium or a silylhydride, silylalkyl, or silylaryl precursor of sulfur, selenium, or tellurium. Methods of forming a memory cell including the metal chalcogenide material are also disclosed, as are memory cells including the metal chalcogenide material.

Abstract translation: 一种形成金属硫族化物材料的方法。 该方法包括将金属前体和硫族化物前体引入室中，并使金属前体和硫族化物前体反应以在基底上形成金属硫族化物材料。 金属前体是碱金属，碱土金属，过渡金属，后过渡金属或准金属的羧酸盐。 硫属化物前体是硫，硒或碲的氢化物，烷基或芳基前体，或硫，硒或碲的甲硅烷基化氢，甲硅烷基烷基或甲硅烷基芳基前体。 还公开了形成包含金属硫族化物材料的记忆单元的方法，以及包括金属硫族化物材料的存储单元也是如此。

公开(公告)号：US20140227863A1

公开(公告)日：2014-08-14

申请号：US14252959

申请日：2014-04-15

Applicant: Micron Technology, Inc.

Inventor： Timothy A. Quick ,  Stefan Uhlenbrock ,  Eugene P. Marsh

IPC: H01L21/02

CPC classification number: H01L21/02568 ,  C23C16/305 ,  C23C16/45525 ,  H01L21/0237 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02614 ,  H01L21/0262 ,  H01L31/0324

Abstract: Accordingly, a method of forming a metal chalcogenide material may comprise introducing at least one metal precursor and at least one chalcogen precursor into a chamber comprising a substrate, the at least one metal precursor comprising an amine or imine compound of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid, and the at least one chalcogen precursor comprising a hydride, alkyl, or aryl compound of sulfur, selenium, or tellurium. The at least one metal precursor and the at least one chalcogen precursor may be reacted to form a metal chalcogenide material over the substrate. A method of forming a metal telluride material, a method of forming a semiconductor device structure, and a semiconductor device structure are also described.

Abstract translation: 因此，形成金属硫族化物材料的方法可以包括将至少一种金属前体和至少一种硫属前体引入包含基底的室中，所述至少一种金属前体包含碱金属的胺或亚胺化合物，碱 土金属，过渡金属，后过渡金属或准金属，以及所述至少一种硫族元素前体包含硫，硒或碲的氢化物，烷基或芳基化合物。 所述至少一种金属前体和所述至少一种硫属前体可以反应以在所述基底上形成金属硫族化物材料。 还描述了形成金属碲化物材料的方法，形成半导体器件结构的方法和半导体器件结构。