公开(公告)号：US11538991B2

公开(公告)日：2022-12-27

申请号：US16457194

申请日：2019-06-28

Applicant: Micron Technology, Inc.

Inventor： Eugene P. Marsh ,  Stefan Uhlenbrock

IPC: H01L45/00 ,  H01L21/02

Abstract: A method of forming a metal chalcogenide material. The method comprises introducing a metal precursor and a chalcogenide precursor into a chamber, and reacting the metal precursor and the chalcogenide precursor to form a metal chalcogenide material on a substrate. The metal precursor is a carboxylate of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid. The chalcogenide precursor is a hydride, alkyl, or aryl precursor of sulfur, selenium, or tellurium or a silylhydride, silylalkyl, or silylaryl precursor of sulfur, selenium, or tellurium. Methods of forming a memory cell including the metal chalcogenide material are also disclosed, as are memory cells including the metal chalcogenide material.

公开(公告)号：US10319586B1

公开(公告)日：2019-06-11

申请号：US15860388

申请日：2018-01-02

Applicant: Micron Technology, Inc.

Inventor： John A. Smythe ,  Woohee Kim ,  Stefan Uhlenbrock

IPC: C23C16/34 ,  C23C16/40 ,  C23C16/46 ,  H01L21/02 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45527 ,  C23C16/46 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02172

Abstract: An example method comprises an ALD sequence including contacting an outer substrate surface at a temperature T1 with a first precursor to form a monolayer onto the outer substrate surface. Temperature of the outer substrate surface and the monolayer thereon is increased to a temperature T2 that is at least 200° C. greater than a maximum of the temperature T1. The temperature-increasing is at a temperature-increasing rate that takes no more than 10 seconds to get the outer substrate surface and the monolayer thereon at least 200° C. above the maximum temperature T1. At the temperature T2, the monolayer is contacted with a second precursor that reacts with the monolayer to form a reaction product and a new outer substrate surface that each comprise a component from the monolayer and a component from the second precursor. With the monolayer not having been allowed to be at least 200° C. above the maximum temperature T1 for more than 10 seconds, temperature of the new outer substrate surface is decreased from the temperature T2 to a lower temperature TL that is at least 200° C. lower than a minimum of the temperature T2.

公开(公告)号：US09029856B2

公开(公告)日：2015-05-12

申请号：US14252959

申请日：2014-04-15

Applicant: Micron Technology, Inc.

Inventor： Timothy A. Quick ,  Stefan Uhlenbrock ,  Eugene P Marsh

IPC: H01L29/04 ,  H01L31/20 ,  H01L31/036 ,  H01L31/0376 ,  H01L21/02 ,  H01L31/032 ,  C23C16/30 ,  C23C16/455

CPC classification number: H01L21/02568 ,  C23C16/305 ,  C23C16/45525 ,  H01L21/0237 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02614 ,  H01L21/0262 ,  H01L31/0324

Abstract: Accordingly, a method of forming a metal chalcogenide material may comprise introducing at least one metal precursor and at least one chalcogen precursor into a chamber comprising a substrate, the at least one metal precursor comprising an amine or imine compound of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid, and the at least one chalcogen precursor comprising a hydride, alkyl, or aryl compound of sulfur, selenium, or tellurium. The at least one metal precursor and the at least one chalcogen precursor may be reacted to form a metal chalcogenide material over the substrate. A method of forming a metal telluride material, a method of forming a semiconductor device structure, and a semiconductor device structure are also described.

Abstract translation: 因此，形成金属硫族化物材料的方法可以包括将至少一种金属前体和至少一种硫属前体引入包含基底的室中，所述至少一种金属前体包含碱金属的胺或亚胺化合物，碱 土金属，过渡金属，后过渡金属或准金属，以及所述至少一种硫族元素前体包含硫，硒或碲的氢化物，烷基或芳基化合物。 所述至少一种金属前体和所述至少一种硫属前体可以反应以在所述基底上形成金属硫族化物材料。 还描述了形成金属碲化物材料的方法，形成半导体器件结构的方法和半导体器件结构。

公开(公告)号：US11651955B2

公开(公告)日：2023-05-16

申请号：US17215958

申请日：2021-03-29

Applicant: Micron Technology, Inc.

Inventor： Sumeet C. Pandey ,  Brenda D. Kraus ,  Stefan Uhlenbrock ,  John A. Smythe ,  Timothy A. Quick

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  H01L21/0217 ,  H01L21/0234 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02312

Abstract: Methods of forming silicon nitride. Silicon nitride is formed on a substrate by atomic layer deposition at a temperature of less than or equal to about 275° C. The as-formed silicon nitride is exposed to a plasma. The silicon nitride may be formed as a portion of silicon nitride and at least one other portion of silicon nitride. The portion of silicon nitride and the at least one other portion of silicon nitride may be exposed to a plasma treatment. Methods of forming a semiconductor structure are also disclosed, as are semiconductor structures and silicon precursors.

公开(公告)号：US11152205B2

公开(公告)日：2021-10-19

申请号：US15913218

申请日：2018-03-06

Applicant: Micron Technology, Inc.

Inventor： Timothy A. Quick ,  Sumeet C. Pandey ,  Stefan Uhlenbrock

IPC: H01L21/02 ,  C01B21/068 ,  H01L21/768 ,  C09D7/63 ,  C23C16/00 ,  C23C16/04 ,  C23C16/34 ,  C23C16/455 ,  C07F7/02

Abstract: A silicon chalcogenate precursor comprising the chemical formula of Si(XR1)nR24-n, where X is sulfur, selenium, or tellurium, R1 is hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, each R2 is independently hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, and n is 1, 2, 3, or 4. Methods of forming the silicon chalcogenate precursor, methods of forming silicon nitride, and methods of forming a semiconductor structure are also disclosed.

公开(公告)号：US20210217611A1

公开(公告)日：2021-07-15

申请号：US17215958

申请日：2021-03-29

Applicant: Micron Technology, Inc.

Inventor： Sumeet C. Pandey ,  Brenda D. Kraus ,  Stefan Uhlenbrock ,  John A. Smythe ,  Timothy A. Quick

IPC: H01L21/02

Abstract: Methods of forming silicon nitride. Silicon nitride is formed on a substrate by atomic layer deposition at a temperature of less than or equal to about 275° C. The as-formed silicon nitride is exposed to a plasma. The silicon nitride may be formed as a portion of silicon nitride and at least one other portion of silicon nitride. The portion of silicon nitride and the at least one other portion of silicon nitride may be exposed to a plasma treatment. Methods of forming a semiconductor structure are also disclosed, as are semiconductor structures and silicon precursors.

公开(公告)号：US20190206674A1

公开(公告)日：2019-07-04

申请号：US15860388

申请日：2018-01-02

Applicant: Micron Technology, Inc.

Inventor： John A. Smythe ,  Woohee Kim ,  Stefan Uhlenbrock

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/46 ,  C23C16/40 ,  C23C16/34

CPC classification number: H01L21/0228 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45527 ,  C23C16/46 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02172

Abstract: An example method comprises an ALD sequence including contacting an outer substrate surface at a temperature T1 with a first precursor to form a monolayer onto the outer substrate surface. Temperature of the outer substrate surface and the monolayer thereon is increased to a temperature T2 that is at least 200° C. greater than a maximum of the temperature T1. The temperature-increasing is at a temperature-increasing rate that takes no more than 10 seconds to get the outer substrate surface and the monolayer thereon at least 200° C. above the maximum temperature T1. At the temperature T2, the monolayer is contacted with a second precursor that reacts with the monolayer to form a reaction product and a new outer substrate surface that each comprise a component from the monolayer and a component from the second precursor. With the monolayer not having been allowed to be at least 200° C. above the maximum temperature T1 for more than 10 seconds, temperature of the new outer substrate surface is decreased from the temperature T2 to a lower temperature TL that is at least 200° C. lower than a minimum of the temperature T2.

公开(公告)号：US20180144927A1

公开(公告)日：2018-05-24

申请号：US15857920

申请日：2017-12-29

Applicant: Micron Technology, Inc.

Inventor： Sumeet C. Pandey ,  Brenda D. Kraus ,  Stefan Uhlenbrock ,  John A. Smythe ,  Timothy A. Quick

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02312 ,  H01L21/0234

Abstract: Methods of forming silicon nitride. Silicon nitride is formed on a substrate by atomic layer deposition at a temperature of less than or equal to about 275° C. The as-formed silicon nitride is exposed to a plasma. The silicon nitride may be formed as a portion of silicon nitride and at least one other portion of silicon nitride. The portion of silicon nitride and the at least one other portion of silicon nitride may be exposed to a plasma treatment. Methods of forming a semiconductor structure are also disclosed, as are semiconductor structures and silicon precursors.

公开(公告)号：US08765519B2

公开(公告)日：2014-07-01

申请号：US14083084

申请日：2013-11-18

Applicant: Micron Technology, Inc.

Inventor： Eugene P. Marsh ,  Timothy A. Quick ,  Stefan Uhlenbrock

IPC: H01L21/00 ,  H01L21/06

CPC classification number: H01L45/144 ,  C23C16/28 ,  C23C16/305 ,  C23C16/45523 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1616 ,  H01L45/1683

Abstract: A method of forming a phase change material which having germanium and tellurium therein includes depositing a germanium-containing material over a substrate. Such material includes elemental-form germanium. A gaseous tellurium-comprising precursor is flowed to the germanium-comprising material and tellurium is removed from the gaseous precursor to react with the elemental-form germanium in the germanium-comprising material to form a germanium and tellurium-comprising compound of a phase change material over the substrate. Other implementations are disclosed.

Abstract translation: 形成其中具有锗和碲的相变材料的方法包括在基底上沉积含锗材料。 这种材料包括元素形式的锗。 将含气态碲前驱体流入含锗材料，并从气态前驱体中除去碲以与含锗材料中的元素形式的锗反应，形成含锗和碲化合物的相变材料 在基板上。 公开了其他实现。

公开(公告)号：US20190319187A1

公开(公告)日：2019-10-17

申请号：US16457194

申请日：2019-06-28

Applicant: Micron Technology, Inc.

Inventor： Eugene P. Marsh ,  Stefan Uhlenbrock

IPC: H01L45/00 ,  H01L21/02

Abstract: A method of forming a metal chalcogenide material. The method comprises introducing a metal precursor and a chalcogenide precursor into a chamber, and reacting the metal precursor and the chalcogenide precursor to form a metal chalcogenide material on a substrate. The metal precursor is a carboxylate of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid. The chalcogenide precursor is a hydride, alkyl, or aryl precursor of sulfur, selenium, or tellurium or a silylhydride, silylalkyl, or silylaryl precursor of sulfur, selenium, or tellurium. Methods of forming a memory cell including the metal chalcogenide material are also disclosed, as are memory cells including the metal chalcogenide material.