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32 条记录 (耗时 0.035 秒)

    Electrophotographic member with .alpha.-Si layers
    22.
    发明授权
    Electrophotographic member with .alpha.-Si layers 失效
    具有α-Si层的电子照相元件

    公开(公告)号：US4378417A

    公开(公告)日：1983-03-29

    申请号：US254294

    申请日：1981-04-15

    申请人： Eiichi Maruyama ,  Sachio Ishioka ,  Yoshinori Imamura ,  Hirokazu Matsubara ,  Yasuharu Shimomoto ,  Shinkichi Horigome ,  Yoshio Taniguchi

    发明人： Eiichi Maruyama ,  Sachio Ishioka ,  Yoshinori Imamura ,  Hirokazu Matsubara ,  Yasuharu Shimomoto ,  Shinkichi Horigome ,  Yoshio Taniguchi

    IPC分类号： G03G5/08 ,  G03G5/082 ,  H01L21/205 ,  H01L31/08

    CPC分类号： G03G5/08235 ,  G03G5/08221

    摘要： In an electrophotographic member employing an amorphous silicon photoconductive layer, a part which is at least 10 nm thick inwardly of the amorphous silicon layer from the surface (or interface) of the amorphous silicon layer is made of amorphous silicon which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 10.sup.10 .OMEGA..cm. The electrophotographic member exhibits a satisfactory resolution and good dark-decay characteristics. Further, a region which has an optical forbidden band gap narrower than that of the amorphous silicon forming the surface (or interface) region is disposed within the amorphous silicon layer to a thickness of at least 10 nm, whereby the sensitivity of the electrophotographic member to longer wavelengths of light can be enhanced.

    摘要翻译： 在采用非晶硅光电导层的电子照相构件中，从非晶硅层的表面（或界面）向内至少10nm厚的非晶硅层的部分由非晶硅制成，该非晶硅具有光学禁带隙 至少1.6eV，电阻率至少为1010欧米加。 电子照相成像显示出令人满意的分辨率和良好的暗衰变特性。 此外，具有窄于形成表面（或界面）区域的非晶硅的光学禁止带隙的区域设置在至少10nm的厚度的非晶硅层内，由此将电子照相构件的灵敏度设置为 可以增加更长波长的光。

    Electrophotographic plate and process for preparation thereof
    23.
    发明授权
    Electrophotographic plate and process for preparation thereof 失效
    电子照相板及其制备方法

    公开(公告)号：US4314014A

    公开(公告)日：1982-02-02

    申请号：US158369

    申请日：1980-06-11

    申请人： Hideaki Yamamoto ,  Akio Taniguchi ,  Shinkichi Horigome ,  Susumu Saito ,  Yoshiaki Mori ,  Eiichi Maruyama

    发明人： Hideaki Yamamoto ,  Akio Taniguchi ,  Shinkichi Horigome ,  Susumu Saito ,  Yoshiaki Mori ,  Eiichi Maruyama

    IPC分类号： G03G5/043 ,  G03G5/08 ,  G03G5/082

    CPC分类号： G03G5/0436 ,  G03G5/0433

    摘要： Disclosed is an electrophotographic plate having a laminated structure comprising a first Se layer containing 3 to 10% by weight of As, a second Se layer containing 40 to 47% by weight of Te and 3 to 10% by weight of As and a fourth Se layer consisting solely of Se or comprising Se and up to 10% by weight of As or an organic semiconductor layer, wherein a substrate is arranged so that at least the face of the substrate which is contiguous to the face of one of said first Se layer and said fourth Se layer or organic semiconductor layer, that is located on the outer side of the laminated structure, is electrically conductive.It is preferred that the fourth Se layer be formed by vacuum evaporation deposition while maintaining the substrate temperature at 50.degree. to 80.degree. C. The residual potential of the electrophotographic plate can be reduced.

    摘要翻译： 公开了一种具有叠层结构的电子照相板，其包括含有3至10重量％的As的第一Se层，包含40至47重量％的Te和3至10重量％的As的第二Se层和第四Se 由Se组成或包含Se和至多10重量％的As或有机半导体层的层，其中衬底被布置成使得至少衬底的与所述第一Se层之一的表面相邻的面 并且位于层叠结构的外侧的所述第四Se层或有机半导体层是导电的。 优选地，通过真空蒸发沉积形成第四Se层，同时将衬底温度保持在50℃至80℃。可以减小电子照相板的残留电位。

    Embossing metal hold
    24.
    发明授权
    Embossing metal hold 失效
    压花金属扣

    公开(公告)号：US5338178A

    公开(公告)日：1994-08-16

    申请号：US800455

    申请日：1991-11-27

    申请人： Keizo Kato ,  Shinkichi Horigome ,  Ryo Suzuki ,  Masaru Ito

    发明人： Keizo Kato ,  Shinkichi Horigome ,  Ryo Suzuki ,  Masaru Ito

    IPC分类号： B29D17/00 ,  G11B7/26 ,  B29C59/00

    CPC分类号： B29D17/005 ,  G11B7/26 ,  Y10S425/81

    摘要： According to the present invention, etching is used to form a concave and convex pattern corresponding to information on an embossing metal mold comprising a conductive layer and a layer which includes an Ni electric-plating layer, or an Ni electric-plating layer, so that the surface of the embossing metal mold will not be contaminated even if processing conditions are somewhat changed, and that the mold will have less defects. Thus, optical disk substrates of high quality can be produced. Besides, time required for manufacturing a stamper can be shortened.

    摘要翻译： 根据本发明，使用蚀刻来形成对应于包括导电层的压花金属模具和包括Ni电镀层或Ni电镀层的层的信息的凹凸图案，使得 即使处理条件有些变化，压花金属模具的表面也不会被污染，并且模具将具有较少的缺陷。 因此，可以制造高质量的光盘基板。 此外，可以缩短制造压模所需的时间。

    Information-recording medium
    25.
    发明授权
    Information-recording medium 失效
    信息记录介质

    公开(公告)号：US5314734A

    公开(公告)日：1994-05-24

    申请号：US15854

    申请日：1993-02-10

    申请人： Tetsuya Nishida ,  Shinkichi Horigome

    发明人： Tetsuya Nishida ,  Shinkichi Horigome

    IPC分类号： B41M5/26 ,  C23C14/06 ,  G11B7/243 ,  G11B7/258 ,  B32B3/02

    CPC分类号： C23C14/0623 ,  G11B7/243 ,  G11B2007/24308 ,  G11B2007/2431 ,  G11B2007/24312 ,  G11B2007/24314 ,  G11B2007/24316 ,  Y10S428/913 ,  Y10S430/146

    摘要： An information recording medium which is superior in record/read-out characteristics, high in sensitivity and good in stability can be provided at a low cost by using, as an information-recording medium in which recording is carried out due to change in atomic arrangement upon irradiation with a laser beam, an information-recording medium comprising substrates 1, 1' , recording layers 2, 2' changing in atomic arrangement upon irradiation with a recording energy beam, and reflective layers which are provided contiguous to the recording layers and the recording layer has an average composition represented by A.sub.w D.sub.x Sb.sub.y Se.sub.z (wherein w, x, y and z are in the ranges of 0.ltoreq.w.ltoreq.30, 3.ltoreq.x.ltoreq.57, 3.ltoreq.y.ltoreq.57 and 40.ltoreq.z.ltoreq.90 in atomic percent, D represents at least one element of Sn, In, Ge, Pb, Si, Bi, Ga, Au, Ag and Cu and A represents an element other than Sb, Se, the elements represented by D and rare gases).

    摘要翻译： 通过使用由于原子排列的变化而进行记录的信息记录介质，可以以低成本提供记录/读出特性优异，灵敏度高，稳定性好的信息记录介质 在用激光束照射的情况下，包括基板1,1'的信息记录介质，在记录能量束照射时以原子排列改变的记录层2,2'和与记录层邻接设置的反射层， 记录层具有由AwDxSbySez表示的平均组成（其中w，x，y和z在0≤w≤30,3≤x≤5.5，3≤y≤3.0的范围内， = 57和40原子百分比，D表示Sn，In，Ge，Pb，Si，Bi，Ga，Au，Ag和Cu中的至少一种元素，A表示Sb以外的元素 ，Se，由D表示的元素和稀有气体）。

    Information recording medium
    26.
    发明授权
    Information recording medium 失效
    信息记录介质

    公开(公告)号：US5273860A

    公开(公告)日：1993-12-28

    申请号：US615914

    申请日：1993-11-20

    申请人： Tetsuya Nishida ,  Shinkichi Horigome ,  Mari Ichikawa ,  Norio Ohta ,  Shuhei Nakamichi ,  Akira Gotoh

    发明人： Tetsuya Nishida ,  Shinkichi Horigome ,  Mari Ichikawa ,  Norio Ohta ,  Shuhei Nakamichi ,  Akira Gotoh

    IPC分类号： G11B7/013 ,  G11B7/243 ,  G11B7/252 ,  G11B7/257 ,  G11B7/24

    CPC分类号： G11B7/257 ,  G11B7/24067 ,  G11B7/243 ,  G11B2007/24312 ,  G11B2007/24314 ,  G11B2007/24316 ,  G11B2007/24328 ,  G11B7/00453 ,  Y10S430/146

    摘要： Disclosed herein is an information recording medium which is composed of a substrate, underlayer, and recording film and is capable of recording information by means of depressions or pits which are formed on the recording film upon irradiation with a recording energy beam, said information recording medium being characterized in that the recording film is provided with a supporting layer on at least one side of the recording film, said supporting layer having a melting point which is lower than that of the recording film, or on that side of the recording film which is adjacent to the substrate, said supporting layer having a melting point which is higher than that of the recording film. Owing to these features, the information recording medium gives recording pits having a smaller rim inner diameter, so that it achieves a high recording power margin for high-density recording.

    摘要翻译： 本文公开了一种信息记录介质，其由基板，底层和记录膜构成，并且能够通过在记录能量束照射时在记录膜上形成的凹陷或凹坑来记录信息，所述信息记录介质 其特征在于，记录膜在记录膜的至少一侧上设置有支撑层，所述支撑层的熔点低于记录膜的熔点，或者记录膜的那一侧为 所述支撑层具有比记录膜更高的熔点。 由于这些特征，信息记录介质产生具有较小轮辋内径的记录凹坑，因此其实现高记录功率裕度用于高密度记录。

    Electrophotographic member with .alpha.-Si and H
    30.
    发明授权
    Electrophotographic member with .alpha.-Si and H 失效
    具有α-Si和H的电子照相元件

    公开(公告)号：US4377628A

    公开(公告)日：1983-03-22

    申请号：US257346

    申请日：1981-04-24

    申请人： Sachio Ishioka ,  Eiichi Maruyama ,  Yoshinori Imamura ,  Hirokazu Matsubara ,  Shinkichi Horigome

    发明人： Sachio Ishioka ,  Eiichi Maruyama ,  Yoshinori Imamura ,  Hirokazu Matsubara ,  Shinkichi Horigome

    IPC分类号： G03G5/08 ,  G03F7/20 ,  G03G5/082 ,  H01L31/08 ,  G03G5/14

    CPC分类号： G03F7/70216 ,  G03F7/707 ,  G03G5/08221 ,  G03G5/08235

    摘要： Disclosed is an electrophotographic member having an amorphous-silicon photoconductive layer, wherein the distance between a portion in which light illuminating the photoconductor is absorbed therein until its intensity decreases to 1% of that at incidence and the interface of the photoconductor opposite to the light incidence side thereof is at most 5 .mu.m, whereby the residual potential of the photoconductive layer can be reduced.That part of the photoconductive layer constituting the electrophotographic member which is at least 10 nm thick inwardly of the photoconductive layer from the surface thereof to store charges is made of amorphous silicon which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 10.sup.10 .OMEGA..multidot.cm. Further, within such photoconductive layer, a region of amorphous silicon which has an optical forbidden band gap smaller than that of the amorphous silicon forming the surface part is disposed at a thickness of at least 10 nm. By forming the region of the narrower optical forbidden band gap within the photoconductive layer in this manner, the sensitivity of the photoconductive layer to light of longer wavelengths can be enhanced.

    摘要翻译： 公开了具有非晶硅光电导层的电子照相构件，其中照射光电导体的光被吸收到其中的部分之间的距离，直到其强度降低到其入射时的1％，并且光电导体的与光入射相反的界面 一侧为5μm以下，能够降低光电导层的残留电位。 构成电子照相构件的光电导元件的从其表面向内存储电荷的至少10nm厚的电子照相构件的部分由非晶硅制成，其具有至少1.6eV的光学禁带宽和电阻率 至少1010 OMEGA xcm。 此外，在这种光导电层内，具有比形成表面部分的非晶硅的光学禁带宽小的非晶硅区域设置在至少10nm的厚度。 通过以这种方式在光导电层内形成较窄的光学禁带区域，可以提高光电导层对较长波长的光的灵敏度。