摘要:
In a construction wherein at the start of fixing, a pressure belt is brought into contact with a fixing roller at uniform timing, it has sometimes been the case that the temperature of the pressure belt at a point of time whereat the fixing is started does not become a desired temperature but faulty fixing occurs. The timing for bringing the pressure belt into contact with the fixing roller at the start of fixing is changed in accordance with the detected temperature of the pressure belt. By such a construction, faulty fixing can be prevented from occurring.
摘要:
An image forming apparatus that can provide a quality image in a stable manner without lowering the productivity. A reference image forming unit forms reference images on a transfer member. A plurality of sensing units detect densities of the formed reference images. A control unit adjusts respective output values from the plurality of sensing units according to a difference between the output values from the plurality of sensing units. The control unit performs error processing according to the difference between the output values from the plurality of sensing units when the control unit adjusts the output values from the plurality of sensing units.
摘要:
In a sheet conveyance system in which a plurality of apparatuses each including a communication unit with a plurality of communication channels are connected, and a sheet is conveyed between the apparatuses, each of the plurality of communication channels can be switched between a transmission mode and a reception mode. When a plurality of transmission channels are set by channel assignment, communication can be executed by giving a priority to each transmission destination. If transmission data are accumulated in an apparatus, and they include data for a transmission destination with a higher priority over the current data transmission destination, the number of transmission channels is increased, and the priority is raised.
摘要:
In an image forming apparatus having a discrimination mechanism that identifies an input document image as a color image or a monochrome image and an area recognition mechanism that recognizes a plurality of different areas contained in the document image, the apparatus applies the optimum color image forming mode even if the document is identified as a color image and forms an image. The user is permitted to select either a first color image forming mode that uses recording agents of m colors (where m is a natural number equal to or greater than 4) or a second color image forming mode that uses recording agents of n colors (where n is a natural number equal to or greater than m+1) as a color image forming mode applied to at least one of the areas recognized by the area recognition mechanism. If the input document image is identified as a color image, the apparatus applies the selected color image forming mode to at least one of the areas recognized by the area recognition mechanism and forms an image.
摘要:
A nonvolatile semiconductor memory device includes: a gate dielectric made of a multilayer dielectric that is formed on a substrate and discretely accumulates charges; a gate electrode formed on the gate dielectric; a pair of diffusion regions formed in the surface of the substrate with the gate electrode interposed therebetween and serving as a source and a drain; and a channel region existing between the diffusion regions. At least one of regions of the gate dielectric located between the pair of diffusion regions and lateral end parts of the gate electrode opposed to the diffusion regions includes a fixed charge accumulation region in which charges produced by irradiating the gate electrode with ultraviolet light can be accumulated, and at least one said diffusion region located below the fixed charge accumulation region is formed to overlap with the fixed charge accumulation region in plan configuration and extend beyond the fixed charge accumulation region toward the middle of the channel region in plan configuration.
摘要:
A nonvolatile semiconductor memory device includes nonvolatile semiconductor memory elements and a first conductor. Each nonvolatile semiconductor memory element includes a gate insulating film including a charge trapping layer formed on a substrate, a gate electrode formed on the gate insulating film, and a pair of diffusion layers formed in a surface layer of the substrate with the gate electrode interposed therebetween and functioning as a source or a drain. The first conductor electrically connects a pair of diffusion layers of each nonvolatile semiconductor memory element to each other. Ends of each gate electrode which respectively face a pair of diffusion layers of a corresponding nonvolatile semiconductor memory element are partially covered by the first conductor when viewed two-dimensionally.
摘要:
An image forming apparatus is provided which includes: an image forming device for forming an image on a recording material; a heating member heating the image formed on the recording material in a nip portion; an endless belt conveying the recording material toward the nip portion formed between itself and the heating member; a contacting and separating device for bringing said heating member and said belt into the contact with each other and for separating said heating member and said belt from each other; and a detection device for detecting the temperature of the belt, wherein if the detected temperature of the belt reaches a predetermined temperature, an image formation job is interrupted, and the heating member and the belt are separated.
摘要:
A memory transistor and a select transistor are disposed side by side on a semiconductor substrate between source/drain diffusion layers thereof, with an intermediate diffusion layer interposed therebetween. The memory transistor includes: a gate insulating film having such a thickness as to allow tunneling current to pass therethrough; a floating gate electrode; an interelectrode insulating film; and a control gate electrode. The select transistor includes a gate insulating film and a select gate electrode. Tunneling current, allowing electrons to pass through the gate insulating film under the floating gate electrode, is utilized during the removal and injection of electrons from/into the floating gate electrode. As a result, higher reliability can be attained and rewriting can be performed at a lower voltage. Also, since the select transistor is provided, reading can also be performed at a lower voltage. Improvement of reliability and rewrite and read operations at respective lower voltages are realized for a nonvolatile semiconductor memory device, in which a memory cell includes a floating gate electrode and a control gate electrode.
摘要:
When a control gate electrode 7 is processed using a control gate electrode processing mask 8, the control gate electrode 7 in a region where the floating gate electrode 4 has been removed is partially left. Because of the presence of the left control gate electrode 7, the gate electrode interlayer insulating film 6 and gate insulating film 3 below the control gate electrode 7 are not dug in the region where the floating gate electrode 4 has been removed. Therefore, when the floating gate electrode 4 is removed, the semiconductor substrate is not dug. In this way, since the semiconductor substrate 1 is not dug, the semiconductor memory device can be manufactured stably and precisely.
摘要:
A lens assembly includes a third lens group frame having an end face extending in an optical-axis direction and provided with an end-face cam having displacement along a peripheral direction, for retaining a third group of lenses, a second lens group frame having a cam follower abutted against the end-face cam for retaining a second group of lenses, a second lens group spring for biasing the second lens group frame toward the third lens group frame, rotational regulator for regulating rotation of one of the third lens group frame and the second lens group frame around an optical axis, and a rotator for rotating the other of the third lens group frame and the second lens group frame around an optical axis when zoom operation is performed, wherein the end-face cam and a cam follower are operated by relative angular movement of the third lens group frame and the second lens group frame, around the optical axis at the time the zoom operation is performed to modify spacing therebetween in the optical-axis direction.