公开(公告)号：US20050041258A1

公开(公告)日：2005-02-24

申请号：US10385863

申请日：2003-03-11

申请人： Jon Opsal ,  Allan Rosencwaig

发明人： Jon Opsal ,  Allan Rosencwaig

IPC分类号： G01B11/24 ,  G01B11/30 ,  G03F7/20

CPC分类号： G03F7/70625 ,  G03F7/70633

摘要： A method for analyzing asymmetric structures (including isolated and periodic structures) includes a split detector for use in a broadband spectrometer. The split has detector has separate right and left halves. By independently measuring and comparing the right and left scattered rays, information about asymmetries can be determined.

摘要翻译： 用于分析不对称结构（包括隔离和周期性结构）的方法包括用于宽带光谱仪的分离检测器。 分体检测器具有单独的左右两半。 通过独立测量和比较右和左散射光线，可以确定关于不对称性的信息。

公开(公告)号：US06608689B1

公开(公告)日：2003-08-19

申请号：US09384474

申请日：1999-08-27

申请人： Lanhua Wei ,  Jon Opsal ,  Allan Rosencwaig

发明人： Lanhua Wei ,  Jon Opsal ,  Allan Rosencwaig

IPC分类号： G01B1128

CPC分类号： G01B11/0625 ,  G01B11/16

摘要： A composite metrology tool, measures basic optical parameters of thin films (e.g., thickness, index of refraction, and birefringence) and stress (e.g., wafer displacements, such as bow and warp). These measurements are combined (e.g. in a processor) using optimization techniques to yield accurate overall information of the wafer parameters.

公开(公告)号：US06583875B1

公开(公告)日：2003-06-24

申请号：US09575295

申请日：2000-05-19

申请人： Lanhua Wei ,  Jon Opsal ,  Allan Rosencwaig

发明人： Lanhua Wei ,  Jon Opsal ,  Allan Rosencwaig

IPC分类号： G01J400

CPC分类号： G01K11/12 ,  G01B11/065 ,  G01N21/211

摘要： An method and apparatus are disclosed for accurately and repeatably determining the thickness of a thin film on a substrate. A rotating compensator ellipsometer is used which generates both 2&ohgr; and 4&ohgr; output signals. The. 4&ohgr; omega signal is used to provide an indication of the temperature of the sample. This information is used to correct the analysis of the thin film based on the 2&ohgr; signal. These two different signals generated by a single device provide independent measurements of temperature and thickness and can be used to accurately analyze a sample whose temperature is unknown.

摘要翻译： 公开了用于精确地和可重复地确定衬底上的薄膜的厚度的方法和装置。 使用旋转补偿器椭偏仪，其产生2omega和4omega输出信号。 的。 4omega omega信号用于提供样品温度的指示。 该信息用于基于2omega信号来校正薄膜的分析。 由单个器件产生的这两个不同的信号提供温度和厚度的独立测量，并可用于准确分析温度未知的样品。

公开(公告)号：US06417921B2

公开(公告)日：2002-07-09

申请号：US09880203

申请日：2001-06-13

申请人： Allan Rosencwaig ,  Jon Opsal

发明人： Allan Rosencwaig ,  Jon Opsal

IPC分类号： G01J400

CPC分类号： G01B11/0641

摘要： An optical measurement system is disclosed for evaluating samples with multi-layer thin film stacks. The optical measurement system includes a reference ellipsometer and one or more non-contact optical measurement devices. The reference ellipsometer is used to calibrate the other optical measurement devices. Once calibration is completed, the system can be used to analyze multi-layer thin film stacks. In particular, the reference ellipsometer provides a measurement which can be used to determine the total optical thickness of the stack. Using that information coupled with the measurements made by the other optical measurement devices, more accurate information about individual layers can be obtained.

公开(公告)号：US5181080A

公开(公告)日：1993-01-19

申请号：US813900

申请日：1991-12-23

申请人： Jeffrey T. Fanton ,  Jon Opsal ,  Allan Rosencwaig

发明人： Jeffrey T. Fanton ,  Jon Opsal ,  Allan Rosencwaig

IPC分类号： G01B11/06

CPC分类号： G01B11/065

摘要： A method and apparatus is disclosed for measuring the thickness or other optical constants of a thin film on a sample. The apparatus includes a laser for generating a linearly polarized probe beam. The probe beam is tightly focused on the sample surface to create a spread of angles of incidence. The reflected probe beam is passed through a quarter-wave plate and linear polarizer before impinging on a quad cell photodetector. The output signals from the photodetector represent an integration of the intensity of individual rays having various angles of incidence. By taking the difference between the sums of the output signals of diametrically opposed quadrants, a value can be obtained which varies linearly with film thickness for very thin films. The subject device can be used in conjunction with other prior devices to enhance sensitivity for thicker films.

摘要翻译： 公开了用于测量样品上的薄膜的厚度或其它光学常数的方法和装置。 该装置包括用于产生线偏振探测光束的激光器。 探针光束紧紧地聚焦在样品表面上以产生入射角的扩散。 反射的探测光束在撞击在四单元光电检测器上之前通过四分之一波片和线偏振器。 来自光电检测器的输出信号表示具有各种入射角的单个光线的强度的积分。 通过取直径相对的象限的输出信号的和之间的差值，可以获得与薄膜厚度线性变化的值。 本装置可以与其他现有装置一起使用，以增强较厚膜的灵敏度。

公开(公告)号：US4632561A

公开(公告)日：1986-12-30

申请号：US728759

申请日：1985-04-30

申请人： Allan Rosencwaig ,  Jon Opsal

发明人： Allan Rosencwaig ,  Jon Opsal

IPC分类号： G01N23/225 ,  G01N21/47 ,  G01N21/84 ,  G01N21/88 ,  G01N25/72

CPC分类号： G01N25/72 ,  G01N21/47 ,  G01N2021/1782 ,  G01N2021/8461 ,  G01N21/171

摘要： A method and apparatus is disclosed for evaluating surface and subsurface features in a sample by detecting scattering of a probe beam. More particularly, the subject invention relates to the detection of thermal and/or plasma waves through the phenomenon of optical scattering. The apparatus includes a periodic excitation source for supplying energy to the surface of the sample to generate thermal and/or plasma waves. A radiation probe is directed to the surface of the sample within the area that is being periodically excited and in a manner that the probe beam is scattered from the excited area. Variations of the intensity of the scattered probe beam are detected and processed to evaluate surface and subsurface characteristics of the sample.

摘要翻译： 公开了一种通过检测探测光束的散射来评估样品中的表面和地下特征的方法和装置。 更具体地说，本发明涉及通过光散射现象检测热和/或等离子体波。 该装置包括用于向样品表面提供能量以产生热和/或等离子体波的周期性激发源。 辐射探针被引导到被周期性地激发的区域内的样品表面，并且以探针光束从激发区域散射的方式。 检测并处理散射探针光束强度的变化，以评估样品的表面和表面下特性。

公开(公告)号：US07061627B2

公开(公告)日：2006-06-13

申请号：US10385863

申请日：2003-03-11

申请人： Jon Opsal ,  Allan Rosencwaig

发明人： Jon Opsal ,  Allan Rosencwaig

IPC分类号： G01B11/30

CPC分类号： G03F7/70625 ,  G03F7/70633

摘要： A method for analyzing asymmetric structures (including isolated and periodic structures) includes a split detector for use in a broadband spectrometer. The split has detector has separate right and left halves. By independently measuring and comparing the right and left scattered rays, information about asymmetries can be determined.

摘要翻译： 用于分析不对称结构（包括隔离和周期性结构）的方法包括用于宽带光谱仪的分离检测器。 分体检测器具有单独的左右两半。 通过独立测量和比较右和左散射光线，可以确定关于不对称性的信息。

公开(公告)号：US06842259B2

公开(公告)日：2005-01-11

申请号：US10850491

申请日：2004-05-20

申请人： Allan Rosencwaig ,  Jon Opsal

发明人： Allan Rosencwaig ,  Jon Opsal

IPC分类号： G01B11/00 ,  G01B11/02 ,  G01B11/06 ,  G01B11/24

CPC分类号： G01B11/24 ,  G01B11/00 ,  G01B11/02 ,  G01B11/0608

摘要： A method is disclosed for evaluating isolated and aperiodic structure on a semiconductor sample. A probe beam from a coherent laser source is focused onto the structure in a manner to create a spread of angles incidence. The reflected light is monitored with an array detector. The intensity or polarization state of the reflected beam as a function of radial position within the beam is measured. Each measurement includes both specularly reflected light as well as light that has been scattered from the aperiodic structure into that detection position. The resulting output is evaluated using an aperiodic analysis to determine the geometry of the structure.

摘要翻译： 公开了一种用于评估半导体样品上的隔离和非周期结构的方法。 来自相干激光源的探测光束以一定的角度入射的方式聚焦到结构上。 用阵列检测器监测反射光。 测量作为光束内的径向位置的函数的反射光束的强度或极化状态。 每个测量包括镜面反射光以及从非周期结构散射到该检测位置的光。 使用非周期性分析来评估所得到的输出以确定结构的几何形状。

公开(公告)号：US06754305B1

公开(公告)日：2004-06-22

申请号：US09629407

申请日：2000-08-01

申请人： Allan Rosencwaig ,  Jon Opsal

发明人： Allan Rosencwaig ,  Jon Opsal

IPC分类号： G01B1502

CPC分类号： G01B15/08 ,  G01B15/02 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： The teachings of the subject invention lead to a new application of the XRR and RXRR systems. In particular, it has been recognized for the first time that such systems can be used to measure thickness of a variety of thin films (both dielectric, opaque and metal films) on patterned wafers where the feature size is smaller than the measurement spot. Broadly speaking, one aspect of the invention is the recognition that XRR and RXRR systems can be used not only on test wafers but on patterned wafers as well. The approach of the present invention to measuring the film thicknesses of patterned semiconductor wafers using XRR relies on the recognition that the measured X-ray reflection curve can be attributed primarily to the thicknesses of the layers rather than the structure of the pattern. In one aspect of the present invention, analysis of the patterned wafer may be reduced to the problem of analyzing an unpatterned wafer through a relatively simple transformation of the data. In another aspect of the present invention, analysis of the patterned wafer may be simplified by using a Fourier transform analysis.

摘要翻译： 本发明的教导导致XRR和RXRR系统的新应用。 特别地，已经首先认识到这样的系统可用于测量图案化晶片上各种薄膜（电介质，不透明和金属膜）的厚度，其中特征尺寸小于测量点。 一般来说，本发明的一个方面是认识到XRR和RXRR系统不仅可以用于测试晶片，也可以用于图案化晶片上。 使用XRR测量图案化半导体晶片的膜厚度的本发明的方法取决于所测量的X射线反射曲线主要归因于层的厚度而不是图案的结构。 在本发明的一个方面，图案化晶片的分析可以通过数据的相对简单的变换来减少分析未图案化晶片的问题。 在本发明的另一方面，可以通过使用傅里叶变换分析来简化图案化晶片的分析。

公开(公告)号：US06678349B2

公开(公告)日：2004-01-13

申请号：US10310593

申请日：2002-12-04

申请人： Jon Opsal ,  Allan Rosencwaig

发明人： Jon Opsal ,  Allan Rosencwaig

IPC分类号： G01B1502

CPC分类号： G01N23/20

摘要： This invention provides a measurement device that includes both an X-ray reflectometer and a thermal or plasma wave measurement module for determining the characteristics of a sample. Preferably, these two measurement modules are combined into a unitary apparatus and arranged to be able to take measurements at the same location on the wafer. A processor will receive data from both modules and combine that data to resolve ambiguities about the characteristics of the sample. The processor can be part of the device or separate therefrom as long as the measurement data is transferred to the processor.

摘要翻译： 本发明提供了一种包括X射线反射计和用于确定样品特性的热或等离子体波测量模块的测量装置。 优选地，将这两个测量模块组合成单一设备并且布置成能够在晶片上的相同位置进行测量。 处理器将从两个模块接收数据，并组合该数据以解决关于样本特征的模糊。 只要测量数据被传送到处理器，处理器可以是设备的一部分或与其分离。