Dual-chamber plasma processing apparatus
    23.
    发明申请
    Dual-chamber plasma processing apparatus 有权
    双腔等离子体处理装置

    公开(公告)号:US20060021701A1

    公开(公告)日:2006-02-02

    申请号:US10901825

    申请日:2004-07-29

    IPC分类号: C23F1/00

    CPC分类号: H01J37/32357 H01J37/3244

    摘要: A dual-chamber plasma processing apparatus comprises two reaction spaces which are equipped with different gas inlet lines and different RF systems. Each reaction space is provided with an RF wave entry path and an RF wave return path to supply RF power from an RF power source and return RF power to the same RF power source.

    摘要翻译: 双室等离子体处理装置包括两个装有不同气体入口管线和不同RF系统的反应空间。 每个反应空间设置有RF波进入路径和RF波返回路径,以从RF电源提供RF功率并将RF功率返回到相同的RF功率源。