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公开(公告)号:US20090090382A1
公开(公告)日:2009-04-09
申请号:US11868437
申请日:2007-10-05
IPC分类号: B08B6/00
CPC分类号: B08B7/0035 , C23C16/4405
摘要: A method of self-cleaning a plasma reactor upon depositing a carbon-based film on a substrate a pre-selected number of times, includes: (i) exciting oxygen gas and/or nitrogen oxide gas to generate a plasma; and (ii) exposing to the plasma a carbon-based film accumulated on an upper electrode provided in the reactor and a carbon-based film accumulated on an inner wall of the reactor.
摘要翻译: 包括:(i)激发氧气和/或氮氧化物气体以产生等离子体;在基板上沉积碳基膜时自动清洗等离子体反应器的方法, 和(ii)将等离子体暴露于聚集在反应器中的上电极上的碳基膜和积聚在反应器内壁上的碳基膜。
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公开(公告)号:US07381291B2
公开(公告)日:2008-06-03
申请号:US10901825
申请日:2004-07-29
申请人: Yasuhiro Tobe , Yoshinori Morisada , Shingo Ikeda , Baiei Kawano
发明人: Yasuhiro Tobe , Yoshinori Morisada , Shingo Ikeda , Baiei Kawano
IPC分类号: C23C16/00 , C23F1/00 , H01L21/306
CPC分类号: H01J37/32357 , H01J37/3244
摘要: A dual-chamber plasma processing apparatus comprises two reaction spaces which are equipped with different gas inlet lines and different RF systems. Each reaction space is provided with an RF wave entry path and an RF wave return path to supply RF power from an RF power source and return RF power to the same RF power source.
摘要翻译: 双室等离子体处理装置包括两个装有不同气体入口管线和不同RF系统的反应空间。 每个反应空间设置有RF波进入路径和RF波返回路径,以从RF电源提供RF功率并将RF功率返回到相同的RF功率源。
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公开(公告)号:US20060021701A1
公开(公告)日:2006-02-02
申请号:US10901825
申请日:2004-07-29
申请人: Yasuhiro Tobe , Yoshinori Morisada , Shingo Ikeda , Baiei Kawano
发明人: Yasuhiro Tobe , Yoshinori Morisada , Shingo Ikeda , Baiei Kawano
IPC分类号: C23F1/00
CPC分类号: H01J37/32357 , H01J37/3244
摘要: A dual-chamber plasma processing apparatus comprises two reaction spaces which are equipped with different gas inlet lines and different RF systems. Each reaction space is provided with an RF wave entry path and an RF wave return path to supply RF power from an RF power source and return RF power to the same RF power source.
摘要翻译: 双室等离子体处理装置包括两个装有不同气体入口管线和不同RF系统的反应空间。 每个反应空间设置有RF波进入路径和RF波返回路径,以从RF电源提供RF功率并将RF功率返回到相同的RF功率源。
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24.
公开(公告)号:US07799134B2
公开(公告)日:2010-09-21
申请号:US11061986
申请日:2005-02-18
IPC分类号: H01L21/00
CPC分类号: C23C16/45565 , C23C16/345 , C23C16/5096 , H01J37/32082 , H01J37/3244
摘要: A shower plate 122 has protrusions 22 formed on the front face used with a first electrode in a plasma CVD apparatus. A plane-surface portion 23 is left around apertures of gas inlet holes 21 formed in the shower plate 122. With protrusions 22 being formed, a surface area of the first electrode is increased.
摘要翻译: 喷淋板122具有形成在等离子体CVD装置中与第一电极一起使用的正面上的突起22。 平面表面部分23留在形成在喷淋板122中的气体入口孔21的孔周围。随着形成突起22,第一电极的表面积增加。
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25.
公开(公告)号:US20050183666A1
公开(公告)日:2005-08-25
申请号:US11061986
申请日:2005-02-18
IPC分类号: H05H1/46 , C23C16/00 , C23C16/34 , C23C16/44 , C23C16/455 , C23C16/509 , H01J37/32 , H01L21/31
CPC分类号: C23C16/45565 , C23C16/345 , C23C16/5096 , H01J37/32082 , H01J37/3244
摘要: A shower plate 122 has protrusions 22 formed on the front face used with a first electrode in a plasma CVD apparatus. A plane-surface portion 23 is left around apertures of gas inlet holes 21 formed in the shower plate 122. With protrusions 22 being formed, a surface area of the first electrode is increased.
摘要翻译: 喷淋板122具有形成在等离子体CVD装置中与第一电极一起使用的正面上的突起22。 平面表面部分23留在形成在喷淋板122中的气体入口孔21的孔周围。随着形成突起22,第一电极的表面积增加。
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