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公开(公告)号：US20090090382A1
公开(公告)日：2009-04-09
申请号：US11868437
申请日：2007-10-05
IPC分类号： B08B6/00
CPC分类号： B08B7/0035 , C23C16/4405
摘要： A method of self-cleaning a plasma reactor upon depositing a carbon-based film on a substrate a pre-selected number of times, includes: (i) exciting oxygen gas and/or nitrogen oxide gas to generate a plasma; and (ii) exposing to the plasma a carbon-based film accumulated on an upper electrode provided in the reactor and a carbon-based film accumulated on an inner wall of the reactor.
摘要翻译： 包括：（i）激发氧气和/或氮氧化物气体以产生等离子体;在基板上沉积碳基膜时自动清洗等离子体反应器的方法， 和（ii）将等离子体暴露于聚集在反应器中的上电极上的碳基膜和积聚在反应器内壁上的碳基膜。
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公开(公告)号：US07238393B2
公开(公告)日：2007-07-03
申请号：US10414467
申请日：2003-04-14
IPC分类号： B05D1/04
CPC分类号： H01L21/02167 , C23C16/325 , C23C16/36 , C23C16/401 , C23C16/505 , C23C16/5096 , C23C16/515 , H01L21/02126 , H01L21/02274 , H01L21/0228 , H01L21/3148
摘要： A method for depositing a silicon carbide layer onto a substrate comprises providing a silicon and carbon source gas and an inert gas into a reaction zone. The reaction zone contains the substrate. The method further comprises producing an electric field in the reaction zone. The electric field is generated using low and high frequency RF energy produced by an RF power supply. The RF power supply generates power at an electrode surface used for plasma discharge in the reaction zone. The method further comprises reacting the silicon and carbon source gas to deposit a silicon carbide film on the substrate. The RF power supply generates high energy RF power and low energy RF power during a processing period.
摘要翻译： 将碳化硅层沉积到衬底上的方法包括将硅和碳源气体和惰性气体提供到反应区中。 反应区含有底物。 该方法还包括在反应区中产生电场。 使用由RF电源产生的低频和高频RF能量产生电场。 RF电源在用于反应区域中的等离子体放电的电极表面处产生电力。 该方法还包括使硅和碳源气体反应以在基底上沉积碳化硅膜。 RF电源在处理期间产生高能量RF功率和低能量RF功率。
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公开(公告)号：US06919270B2
公开(公告)日：2005-07-19
申请号：US10682180
申请日：2003-10-09
IPC分类号： H01L21/3065 , C23C16/32 , C23C16/44 , C23C16/455 , H01L21/314 , H01L21/768 , H01L21/44
CPC分类号： C23C16/45523 , C23C16/325 , H01L21/76828 , H01L21/76829
摘要： A method for forming a silicon carbide film on a semiconductor substrate by plasma CVD includes (a) introducing a raw material gas containing silicon, carbon, and hydrogen and an inert gas into a reaction chamber at a predetermined mixture ratio of the raw material gas to the inert gas; (b) applying radio-frequency power at the mixture ratio, thereby forming a curable silicon carbide film having a dielectric constant of about 4.0 or higher; and (c) continuously applying radio-frequency power at a mixture ratio which is reduced from that in step (b), thereby curing the silicon carbide film to give a dielectric constant lower than that of the curable silicon carbide film.
摘要翻译： 通过等离子体CVD在半导体基板上形成碳化硅膜的方法包括：（a）以原料气体与原料气体的预定混合比将含有硅，碳，氢和惰性气体的原料气体引入反应室 惰性气体; （b）以混合比施加射频功率，从而形成介电常数为约4.0以上的可固化碳化硅膜; 和（c）以与步骤（b）相同的混合比率连续地施加射频功率，从而使碳化硅膜固化，得到比可固化碳化硅膜低的介电常数。
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公开(公告)号：US06991959B2
公开(公告)日：2006-01-31
申请号：US10722179
申请日：2003-11-25
IPC分类号： H01L21/00
CPC分类号： H01L21/02167 , C23C16/325 , C23C16/45523 , C23C16/5096 , C30B25/105 , C30B29/36 , H01L21/02126 , H01L21/02274 , H01L21/02337 , H01L21/02381 , H01L21/02529 , H01L21/0262 , H01L21/02661 , H01L21/3148 , H01L21/76807 , H01L21/76828 , H01L21/76829 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a silicon carbide film on a semiconductor substrate by plasma CVD includes: introducing a raw material gas containing silicon, carbon, and hydrogen, an inert gas, and optionally an hydrogen source gas, into a reaction chamber at a predetermined mixing formulation of the raw material gas to the inert gas; applying radio-frequency power at the mixing formulation, thereby forming a curable silicon carbide film having a dielectric constant of about 4.0 or higher; and continuously applying radio-frequency power at a mixing formulation reducing the raw material gas and the hydrogen source gas if any, thereby curing the silicon carbide film to give a dielectric constant and a leakage current lower than those of the curable silicon carbide film.
摘要翻译： 通过等离子体CVD在半导体衬底上形成碳化硅膜的方法包括：以预定的混合配方将含有硅，碳和氢的原料气体，惰性气体和任选的氢源气体引入反应室 的原料气体输送到惰性气体中; 在混合配方中施加射频功率，从而形成介电常数为约4.0或更高的可固化碳化硅膜; 并且在减少原料气体和氢源气体的混合配方中连续施加射频功率，从而使碳化硅膜固化，使介电常数和漏电流低于可固化碳化硅膜的电流。
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公开(公告)号：US07534469B2
公开(公告)日：2009-05-19
申请号：US11095314
申请日：2005-03-31
申请人： Kiyoshi Satoh , Yoshinobu Kano
发明人： Kiyoshi Satoh , Yoshinobu Kano
IPC分类号： C23C16/00
CPC分类号： B08B7/0035 , C23C16/4405 , C23C16/52
摘要： A CVD apparatus comprising an optical unit detecting the mass of contaminants adhering to an inner surface of a CVD reactor by irradiating an inner surface of the reactor with light having monochromaticity through an optical window provided on an inner wall of the reactor and receiving its reflected light is provided.
摘要翻译： 一种CVD装置，包括光学单元，其通过设置在反应器的内壁上的光学窗口照射具有单色光的反射器的内表面来检测附着在CVD反应器的内表面上的污染物的质量，并接收其反射光 被提供。
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公开(公告)号：US07271093B2
公开(公告)日：2007-09-18
申请号：US10852637
申请日：2004-05-24
IPC分类号： H01L21/44
CPC分类号： H01L21/76834 , H01L21/76807 , H01L21/76832 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method of forming an interconnect for a semiconductor device using triple hard layers, comprises: forming a first hard layer serving as an etch stop layer on a metal interconnect-formed dielectric layer; forming a second hard layer on the first hard layer; forming a dielectric layer on the second hard layer; forming a third hard layer on the dielectric layer; forming a hole through the third and second hard layers, the dielectric layer, and the first hard layer; and filling the hole with metal to establish an interconnect. The second and third hard layers are each made of carbon-doped silicon oxide formed from a source gas and a redox gas, while controlling the carbon content in the second hard layer as a function of a flow rate of the redox gas.
摘要翻译： 一种使用三层硬质层形成用于半导体器件的互连的方法包括：在金属互连形成的介电层上形成用作蚀刻停止层的第一硬层; 在所述第一硬质层上形成第二硬质层; 在所述第二硬质层上形成介电层; 在所述电介质层上形成第三硬质层; 通过第三和第二硬质层，电介质层和第一硬质层形成孔; 并用金属填充孔以建立互连。 第二和第三硬层各自由源气体和氧化还原气体形成的碳掺杂氧化硅制成，同时控制第二硬质层中的碳含量作为氧化还原气体的流量的函数。
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公开(公告)号：US06780257B2
公开(公告)日：2004-08-24
申请号：US10051718
申请日：2002-01-17
IPC分类号： C21D900
CPC分类号： C22C38/40 , G11B5/4826 , G11B5/4833 , G11B33/1446
摘要： A base plate of a stainless-steel body material formed by pressing is polished and cleared of burrs by means of an abrasive material that consists mainly of Fe2O3 in a polishing process. The polished base plate is heated to a heat treatment temperature for solid solution in a reducing atmosphere in a heat treatment process. In this heat treatment process, an oxide in the constituents of minute fragments of the abrasive material in the surface of the body material of the base plate is reduced to leave iron, which is dispersed into the body material.
摘要翻译： 通过压制形成的不锈钢主体材料的基板通过在抛光工艺中主要由Fe 2 O 3组成的研磨材料抛光和清除毛刺。 在热处理工序中将抛光后的基板加热至还原气氛中的固溶体的热处理温度。 在该热处理工序中，基板的主体材料表面的研磨材料的微小碎片成分中的氧化物被还原，留下分散在主体材料中的铁。
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8.发明授权公开(公告)号：US06767836B2
公开(公告)日：2004-07-27
申请号：US10235217
申请日：2002-09-04
IPC分类号： H01L21302
CPC分类号： H01L21/02126 , C23C16/4405 , H01L21/02167 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/314 , H01L21/31633 , Y10S438/905
摘要： Provided herein is a method for cleaning CVD reaction chambers with active oxygen species. The active oxygen species may also be mixed with active fluorine species. The active oxygen species are products of a plasma, which may be either generated within the CVD reaction chamber or generated remotely and introduced into the CVD reaction chamber.
摘要翻译： 本文提供了一种用于清洁具有活性氧的CVD反应室的方法。 活性氧也可与活性氟物质混合。 活性氧是等离子体的产物，其可以在CVD反应室内产生或远程产生并引入CVD反应室。
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公开(公告)号：US06761771B2
公开(公告)日：2004-07-13
申请号：US09982454
申请日：2001-10-17
申请人： Kiyoshi Satoh , Hiroki Arai
发明人： Kiyoshi Satoh , Hiroki Arai
IPC分类号： H01L2100
CPC分类号： H01L21/68735 , C23C16/4583 , C23C16/46
摘要： A substrate-supporting apparatus, wherein a substrate is not warped or distorted and a film with uniform thickness is formed, is a semiconductor substrate-supporting apparatus which supports and heats semiconductor substrates inside a vacuum-pumped reaction chamber. On the substrate-supporting surface of the semiconductor substrate-supporting apparatus, a concave portion which includes a depression slanting from the peripheral portion to the center is provided, the semiconductor substrate is supported in a position where the peripheral portion of the back surface of the substrate contacts the slanting surface of the concave portion, and the concave portion is formed so that an interval between the center of the concave portion and the semiconductor substrate becomes the designated distance. The slanting surface of the concave portion may include a portion of a spherical surface or a conical surface.
摘要翻译： 一种衬底支撑装置，其中衬底不翘曲或变形，并且形成具有均匀厚度的膜，是在真空抽吸反应室内支撑和加热半导体衬底的半导体衬底支撑装置。 在半导体基板支撑装置的基板支撑面上设置有包括从周边部向中心倾斜的凹部的凹部，半导体基板被支撑在该半导体基板支撑装置的背面的周边部 基板与凹部的倾斜面接触，并且形成凹部，使得凹部的中心与半导体基板的间隔成为指定距离。 凹部的倾斜表面可以包括球形表面或锥形表面的一部分。
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10.发明授权公开(公告)号：US06683745B1
公开(公告)日：2004-01-27
申请号：US09472175
申请日：1999-12-27
申请人： Sri M. Sri-Jayantha , Vijayeshwar Das Khanna , Gerard McVicker , Hien Dang , Arun Sharma , Kiyoshi Satoh , Tatsuo Nakamoto
发明人： Sri M. Sri-Jayantha , Vijayeshwar Das Khanna , Gerard McVicker , Hien Dang , Arun Sharma , Kiyoshi Satoh , Tatsuo Nakamoto
IPC分类号： G11B1700
CPC分类号： G11B33/08
摘要： A system for mounting a hard disk enclosure (HDE), includes a casing pivotably mounted to minimize at least one of settle-out dynamics, external rotational vibration, and emitted vibration, the casing allowing the HDE to rotate substantially freely, wherein the center of gravity of the HDE is substantially the same as a pivot point of the casing. Further, a computer chassis includes a housing, at least one disk drive assembly for being housed by the housing, and a plurality of theta-mounts integrally built within the housing.
摘要翻译： 一种用于安装硬盘盒（HDE）的系统，包括可枢转地安装的壳体，以最小化至少一个沉降动力学，外部旋转振动和发射的振动，所述壳体允许HDE基本上自由旋转，其中， HDE的重力基本上与壳体的枢转点相同。 此外，计算机机箱包括壳体，至少一个用于由壳体容纳的盘驱动组件以及一体地内置在壳体内的多个θ安装座。
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