公开(公告)号：US20090090382A1

公开(公告)日：2009-04-09

申请号：US11868437

申请日：2007-10-05

申请人： Yoshinori Morisada ,  Seiji Okura ,  Kamal Kishore Goundar ,  Seongoh Woo ,  Kiyoshi Satoh

发明人： Yoshinori Morisada ,  Seiji Okura ,  Kamal Kishore Goundar ,  Seongoh Woo ,  Kiyoshi Satoh

IPC分类号： B08B6/00

CPC分类号： B08B7/0035 ,  C23C16/4405

摘要： A method of self-cleaning a plasma reactor upon depositing a carbon-based film on a substrate a pre-selected number of times, includes: (i) exciting oxygen gas and/or nitrogen oxide gas to generate a plasma; and (ii) exposing to the plasma a carbon-based film accumulated on an upper electrode provided in the reactor and a carbon-based film accumulated on an inner wall of the reactor.

摘要翻译： 包括：（i）激发氧气和/或氮氧化物气体以产生等离子体;在基板上沉积碳基膜时自动清洗等离子体反应器的方法， 和（ii）将等离子体暴露于聚集在反应器中的上电极上的碳基膜和积聚在反应器内壁上的碳基膜。

公开(公告)号：US07410915B2

公开(公告)日：2008-08-12

申请号：US11387527

申请日：2006-03-23

申请人： Yoshinori Morisada ,  Kamal Kishore Goundar ,  Masashi Yamaguchi ,  Nobuo Matsuki ,  Kyu Tae Na ,  Eun Kyung Baek

发明人： Yoshinori Morisada ,  Kamal Kishore Goundar ,  Masashi Yamaguchi ,  Nobuo Matsuki ,  Kyu Tae Na ,  Eun Kyung Baek

IPC分类号： H01L21/469 ,  H01L23/58

CPC分类号： H01L21/31144 ,  B05D1/62 ,  H01L21/02118 ,  H01L21/02274 ,  H01L21/312 ,  H01L21/3127 ,  H01L21/32139

摘要： A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (CαHβXγ, wherein α and β are natural numbers of 5 or more; γ is an integer including zero; X is O, N or F) having a boiling point of about 20° C. to about 350° C. which is not substituted by a vinyl group or an acetylene group; introducing the vaporized gas and CO2 gas or H2 gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas, thereby reducing extinction coefficient (k) at 193 nm and increasing mechanical hardness.

摘要翻译： 通过电容耦合等离子体CVD装置在半导体衬底上形成含烃聚合物膜的方法。 该方法包括以下步骤：蒸发含烃液体单体（其中α和β为自然数） 5或更大;γ是包括零的整数; X是O，N或F），其沸点为约20℃至约350℃，其未被乙烯基或乙炔基取代; 将蒸发的气体和CO 2气体或H 2 H 2气体引入到其中放置基底的CVD反应室中; 并通过气体的等离子体聚合在基板上形成含烃聚合物膜，从而降低193nm处的消光系数（k）并提高机械硬度。

公开(公告)号：US07638441B2

公开(公告)日：2009-12-29

申请号：US11853273

申请日：2007-09-11

申请人： Yoshinori Morisada ,  Nobuo Matsuki ,  Kamal Kishore Goundar

发明人： Yoshinori Morisada ,  Nobuo Matsuki ,  Kamal Kishore Goundar

IPC分类号： H01L21/30

CPC分类号： H01L21/0337 ,  B05D1/62 ,  H01L21/02118 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/3146

摘要： A method forms a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (CαHβXγ, wherein α and β are natural numbers of 5 or more; γ is an integer including zero; X is O, N or F) having a boiling point of about 20° C. to about 350° C.; introducing the vaporized gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas. The liquid monomer is unsaturated and has no benzene structure.

摘要翻译： 一种方法通过电容耦合等离子体CVD装置在半导体衬底上形成含烃聚合物膜。 该方法包括以下步骤：使沸点为约1的含烃液体单体（其中α和β为5或更多的天然数;γ为包括零的整数; X为O，N或F）的烃类液体单体 20℃至约350℃。 将蒸发的气体引入其中放置基板的CVD反应室中; 并通过气体的等离子体聚合在基板上形成含烃聚合物膜。 液体单体是不饱和的，没有苯结构。

公开(公告)号：US06740367B2

公开(公告)日：2004-05-25

申请号：US10328331

申请日：2002-12-23

申请人： Nobuo Matsuki ,  Yoshinori Morisada

发明人： Nobuo Matsuki ,  Yoshinori Morisada

IPC分类号： H05H102

CPC分类号： H01J37/32009 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32541

摘要： A plasma CVD film-forming device forms a film on a semiconductor substrate in such as way that the film quality and film thickness of a thin film becomes uniform. The plasma CVD film-forming device to form a thin film on a semiconductor substrate includes a vacuum chamber, a showerhead positioned within the vacuum chamber, and a susceptor positioned substantially in parallel to and facing the showerhead within the vacuum chamber and on which susceptor the object to be processed is loaded and the central part of the showerhead and/or the susceptor constitutes a concave surface electrode.

摘要翻译： 等离子体CVD膜形成装置以这样的方式在半导体衬底上形成膜，使得薄膜的膜质量和膜厚变得均匀。 用于在半导体衬底上形成薄膜的等离子体CVD膜形成装置包括真空室，位于真空室内的喷头和基本上平行于并面向真空室内的喷头的基座， 装载物体，喷头和/或基座的中心部分构成凹面电极。

公开(公告)号：US07064088B2

公开(公告)日：2006-06-20

申请号：US10412363

申请日：2003-04-11

申请人： Yasuyoshi Hyodo ,  Atsuki Fukazawa ,  Yoshinori Morisada ,  Masashi Yamaguchi ,  Nobuo Matsuki

发明人： Yasuyoshi Hyodo ,  Atsuki Fukazawa ,  Yoshinori Morisada ,  Masashi Yamaguchi ,  Nobuo Matsuki

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： B05D1/62 ,  C09D4/00 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122 ,  H01L23/296 ,  H01L2924/0002 ,  H01L2924/12044 ,  C08G77/00 ,  H01L2924/00

摘要： A hard film is formed on an insulation film formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and optionally an additive gas such as alcohol to a reaction space of a plasma CVD apparatus, and applying low-frequency RF power and high-frequency RF power. The silicon-containing hydrocarbon compound includes a cyclic Si-containing hydrocarbon compound and/or a linear Si-containing hydrocarbon compound, as a basal structure, with reactive groups for form oligomers using the basal structure. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant.

摘要翻译： 通过使含硅烃化合物汽化，形成源极气体，将由源气体构成的反应气体和任选的醇等添加气体引入到半导体基板上的绝缘膜上，形成硬膜至反应空间 等离子体CVD装置，并且施加低频RF功率和高频RF功率。 含硅烃化合物包括使用基础结构的形成低聚物的反应性基团作为基础结构的环状含Si烃化合物和/或线性含Si烃化合物。 反应气体在反应空间中的停留时间通过降低反应气体的总流量而延长，从而形成低介电常数的硅氧烷聚合物膜。

公开(公告)号：US06784123B2

公开(公告)日：2004-08-31

申请号：US10402109

申请日：2003-03-27

申请人： Nobuo Matsuki ,  Yoshinori Morisada ,  Yasuyoshi Hyodo ,  Seijiro Umemoto

发明人： Nobuo Matsuki ,  Yoshinori Morisada ,  Yasuyoshi Hyodo ,  Seijiro Umemoto

IPC分类号： H01L2131

CPC分类号： B05D1/62 ,  C09D4/00 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122 ,  H01L23/296 ,  H01L2924/0002 ,  H01L2924/12044 ,  C08G77/00 ,  H01L2924/00

摘要： An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus, and depositing a siloxan polymer film by plasma polymerization at a temperature of −50° C.-100° C. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant such as 2.5.

摘要翻译： 通过汽化含硅烃化合物以形成源气体，将源气体和惰性气体等添加气体和氧化性气体构成的反应气体导入到半导体基板的反应空间，形成绝缘膜， 等离子体CVD装置，并且在-50℃-100℃的温度下通过等离子体聚合沉积硅​​氧烷聚合物膜。反应气体在反应空间中的停留时间通过减少反应气体的总流量而延长 以形成低介电常数例如2.5的硅氧烷聚合物膜的方式。

公开(公告)号：US06514880B2

公开(公告)日：2003-02-04

申请号：US09827616

申请日：2001-04-06

申请人： Nobuo Matsuki ,  Lee Jea Sik ,  Yoshinori Morisada ,  Satoshi Takahashi

发明人： Nobuo Matsuki ,  Lee Jea Sik ,  Yoshinori Morisada ,  Satoshi Takahashi

IPC分类号： H01L21469

CPC分类号： B05D1/62 ,  C09D4/00 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122 ,  H01L23/296 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/31663 ,  C08G77/00 ,  H01L2924/00

摘要： A siloxan polymer insulation film has a dielectric constant of 3.1 or lower and has —SiR2O— repeating structural units with a C atom concentration of 20% or less. The siloxan polymer also has high thermal stability and high humidity-resistance. The siloxan polymer is formed by directly vaporizing a silicon-containing hydrocarbon compound of the formula Si&agr;O&agr;−1R2&agr;−&bgr;+2(OCnH2n+1)&bgr; wherein &agr; is an integer of 1-3, &bgr; is 2, n is an integer of 1-3, and R is C1-6 hydrocarbon attached to Si, and then introducing the vaporized compound with an oxidizing agent to the reaction chamber of the plasma CVD apparatus. The residence time of the source gas is lengthened by reducing the total flow of the reaction gas, in such a way as to form a siloxan polymer film having a micropore porous structure with low dielectric constant.

摘要翻译： 硅氧烷聚合物绝缘膜的介电常数为3.1以下，具有C原子浓度为20％以下的-SiR 2 O重复结构单元。 硅氧烷聚合物还具有高热稳定性和高耐湿性。 硅氧烷聚合物通过直接蒸发式SialphaOalpha-1R2alpha-β+ 2（OCnH2n + 1）β的含硅烃化合物形成，其中α为1-3的整数，β为2，n为整数1 -3，R是与Si连接的C 1-6烃，然后将蒸发的化合物与氧化剂一起引入等离子体CVD装置的反应室。 通过减少反应气体的总流量来延长源气体的停留时间，以形成具有低介电常数的微孔多孔结构的硅氧烷聚合物膜。

公开(公告)号：US07470633B2

公开(公告)日：2008-12-30

申请号：US11524037

申请日：2006-09-20

申请人： Nobuo Matsuki ,  Yoshinori Morisada ,  Seijiro Umemoto ,  Jea Sik Lee

发明人： Nobuo Matsuki ,  Yoshinori Morisada ,  Seijiro Umemoto ,  Jea Sik Lee

IPC分类号： H01L21/31

CPC分类号： H01L21/02118 ,  B05D1/62 ,  G03F7/167 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/3127 ,  H01L21/3146

摘要： A method forms a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (CαHβXγ, wherein α and β are natural numbers of 5 or more; γ is an integer including zero; X is O, N or F) having a boiling point of about 20° C. to about 350° C.; introducing the vaporized gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas.

摘要翻译： 一种方法通过电容耦合等离子体CVD装置在半导体衬底上形成含烃聚合物膜。 该方法包括以下步骤：使沸点为约1的含烃液体单体（其中α和β为5或更多的天然数;γ为包括零的整数; X为O，N或F）的烃类液体单体 20℃至约350℃。 将蒸发的气体引入其中放置基板的CVD反应室中; 并通过气体的等离子体聚合在基板上形成含烃聚合物膜。

公开(公告)号：US07381291B2

公开(公告)日：2008-06-03

申请号：US10901825

申请日：2004-07-29

申请人： Yasuhiro Tobe ,  Yoshinori Morisada ,  Shingo Ikeda ,  Baiei Kawano

发明人： Yasuhiro Tobe ,  Yoshinori Morisada ,  Shingo Ikeda ,  Baiei Kawano

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32357 ,  H01J37/3244

摘要： A dual-chamber plasma processing apparatus comprises two reaction spaces which are equipped with different gas inlet lines and different RF systems. Each reaction space is provided with an RF wave entry path and an RF wave return path to supply RF power from an RF power source and return RF power to the same RF power source.

摘要翻译： 双室等离子体处理装置包括两个装有不同气体入口管线和不同RF系统的反应空间。 每个反应空间设置有RF波进入路径和RF波返回路径，以从RF电源提供RF功率并将RF功率返回到相同的RF功率源。

公开(公告)号：US20070224833A1

公开(公告)日：2007-09-27

申请号：US11387527

申请日：2006-03-23

申请人： Yoshinori Morisada ,  Kamal Goundar ,  Masashi Yamaguchi ,  Nobuo Matsuki ,  Kyu Na ,  Eun Baek

发明人： Yoshinori Morisada ,  Kamal Goundar ,  Masashi Yamaguchi ,  Nobuo Matsuki ,  Kyu Na ,  Eun Baek

IPC分类号： C23C16/00 ,  H01L21/31

CPC分类号： H01L21/31144 ,  B05D1/62 ,  H01L21/02118 ,  H01L21/02274 ,  H01L21/312 ,  H01L21/3127 ,  H01L21/32139

摘要： A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (CαHβXγ, wherein α and β are natural numbers of 5 or more; γ is an integer including zero; X is O, N or F) having a boiling point of about 20° C. to about 350° C. which is not substituted by a vinyl group or an acetylene group; introducing the vaporized gas and CO2 gas or H2 gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas, thereby reducing extinction coefficient (k) at 193 nm and increasing mechanical hardness.

摘要翻译： 通过电容耦合等离子体CVD装置在半导体衬底上形成含烃聚合物膜的方法。 该方法包括以下步骤：蒸发含烃液体单体（其中α和β为自然数） 5或更大;γ是包括零的整数; X是O，N或F），其沸点为约20℃至约350℃，其未被乙烯基或乙炔基取代; 将蒸发的气体和CO 2气体或H 2 H 2气体引入到其中放置基底的CVD反应室中; 并通过气体的等离子体聚合在基板上形成含烃聚合物膜，从而降低193nm处的消光系数（k）并提高机械硬度。