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72 条记录 (耗时 0.023 秒)

    (VSIS) semiconductor laser with reduced compressive stress
    21.
    发明授权
    (VSIS) semiconductor laser with reduced compressive stress 失效
    （VSIS）半导体激光器，具有降低的压缩应力

    公开(公告)号：US4592062A

    公开(公告)日：1986-05-27

    申请号：US498041

    申请日：1983-05-25

    申请人： Saburo Yamamoto ,  Hiroshi Hayashi ,  Seiki Yano

    发明人： Saburo Yamamoto ,  Hiroshi Hayashi ,  Seiki Yano

    IPC分类号： H01L21/208 ,  H01S5/00 ,  H01S5/24 ,  H01S3/19

    CPC分类号： H01S5/24

    摘要： A V-channeled substrate inner stripe (VSIS) laser is manufactured on a GaAs substrate. The VSIS laser includes p-Ga.sub.0.7 Al.sub.0.3 As active layer, and an n-Ga.sub.0.85 Al.sub.0.15 As cap layer. The GaAs substrate is removed from the final device. The n-Ga.sub.0.85 Al.sub.0.15 As cap layer functions to support the final device, and to minimize a stress applied to the p-Ga.sub.0.7 Al.sub.0.3 As active layer.

    摘要翻译： 在GaAs衬底上制造V沟道衬底内条（VSIS）激光器。 VSIS激光器包括p-Ga0.7Al0.3As有源层和n-Ga0.85Al0.15As覆盖层。 从最终的器件去除GaAs衬底。 n-Ga0.85Al0.15As覆盖层用于支持最终器件，并且最小化施加到p-Ga0.7Al0.3As有源层的应力。

    Semiconductor laser device having substriped channels for forming an active layer which is thin in an inside portion
    22.
    发明授权
    Semiconductor laser device having substriped channels for forming an active layer which is thin in an inside portion 失效
    具有用于形成在内部较薄的有源层的分流通道的半导体激光器件

    公开(公告)号：US4819245A

    公开(公告)日：1989-04-04

    申请号：US854627

    申请日：1986-04-22

    申请人： Taiji Morimoto ,  Mototaka Taneya ,  Hiroshi Hayashi ,  Saburo Yamamoto

    发明人： Taiji Morimoto ,  Mototaka Taneya ,  Hiroshi Hayashi ,  Saburo Yamamoto

    IPC分类号： H01S5/16 ,  H01S5/223 ,  H01S3/19

    CPC分类号： H01S5/16 ,  H01S5/2232 ,  H01S5/2234

    摘要： A semiconductor laser device comprises a substrate having a main striped channel for confining current therein and sub-striped channels formed in a parallel manner outside of the main striped channel. The width of the sub-striped channels is greater than that of the main striped channel. An active layer is provided for laser oscillation. The portion of the active layer corresponding to the sub-striped channels are formed into a concave portion. The portion of the active layer positioned between the concaved portions of the active layer results in a plane with a limited thickness.

    摘要翻译： 半导体激光器件包括具有用于限制电流的主条纹沟道的衬底和在主条纹沟道外部并行形成的子条纹沟道。 子条带通道的宽度大于主条带通道的宽度。 为激光振荡提供有源层。 对应于子条纹通道的有源层的部分形成为凹入部分。 位于有源层的凹部之间的有源层的部分导致具有有限厚度的平面。

    Window VSIS semiconductor laser
    23.
    发明授权
    Window VSIS semiconductor laser 失效
    窗口VSIS半导体激光器

    公开(公告)号：US4686679A

    公开(公告)日：1987-08-11

    申请号：US713832

    申请日：1985-03-20

    申请人： Seiki Yano ,  Saburo Yamamoto ,  Hiroshi Hayashi ,  Taiji Morimoto

    发明人： Seiki Yano ,  Saburo Yamamoto ,  Hiroshi Hayashi ,  Taiji Morimoto

    IPC分类号： H01S5/16 ,  H01S5/223 ,  H01S5/24 ,  H01S3/19

    CPC分类号： H01S5/16 ,  H01S5/24 ,  H01S5/2234

    摘要： A window VSIS semiconductor laser includes a stimulated region and window regions formed on both ends of the stimulated region. A V-shaped groove is formed in a substrate, and an active layer is formed on the substrate. In one preferred form, the V-shaped groove has a wider width in the stimulated region as compared with the V-shaped groove formed in the window regions. The active layer is a crescent active layer in the stimulated region. One edge of the V-shaped groove in the stimulated region is continuously aligned on a line to the corresponding edge of the V-shaped groove formed in the window regions so as to enhance the optical coupling. In another preferred form, indents are formed in the substrate in the window regions in a manner to sandwich the V-shaped groove formed in the window regions. The V-shaped groove has the same width in the stimulated region and in the window regions. The active layer is plane shaped in the stimulated region, and a thickness of the active layer in the stimulated region is thicker than the active layer formed in the window regions.

    Semiconductor laser device
    25.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US4819244A

    公开(公告)日：1989-04-04

    申请号：US870450

    申请日：1986-06-04

    申请人： Saburo Yamamoto ,  Hiroshi Hayashi ,  Taiji Morimoto

    发明人： Saburo Yamamoto ,  Hiroshi Hayashi ,  Taiji Morimoto

    IPC分类号： H01S5/00 ,  H01S5/02 ,  H01S5/223 ,  H01S5/227 ,  H01S5/24 ,  H01S3/19

    CPC分类号： H01S5/02 ,  H01S5/0217 ,  H01S5/2232 ,  H01S5/2275 ,  H01S5/24

    摘要： A V-channel inner stripe semiconductor laser device comprising a multi-layered growth crystal having an active layer for laser oscillation but no substrate, with a buffer layer formed on the multi-layered growth crystal thicker than all of the layers of the growth crystal, where the multi-layered growth crystal and buffer layer are sandwiched between an n-sided electrode and a p-sided electrode, wherein a pair of mesa-striped channels are formed outside of the V-channel to remove the outside of the optical waveguide formed in the active layer corresponding to the V-channel.

    摘要翻译： 一种V沟道内条状半导体激光器件，包括具有用于激光振荡的有源层但不具有衬底的多层生长晶体，其中形成在比生长晶体的所有层厚的多层生长晶体上的缓冲层， 其中多层生长晶体和缓冲层夹在n侧电极和p侧电极之间，其中在V沟道外部形成一对台面条纹沟槽以去除形成的光波导的外部 在对应于V通道的有源层中。

    Semiconductor laser device with a V-channel and a mesa
    27.
    发明授权
    Semiconductor laser device with a V-channel and a mesa 失效
    具有V沟道和台面的半导体激光器件

    公开(公告)号：US4754462A

    公开(公告)日：1988-06-28

    申请号：US849973

    申请日：1986-04-10

    申请人： Saburo Yamamoto ,  Taiji Morimato ,  Hiroshi Hayashi

    发明人： Saburo Yamamoto ,  Taiji Morimato ,  Hiroshi Hayashi

    IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/227 ,  H01S5/24 ,  H01S3/19

    CPC分类号： H01S5/20 ,  H01S5/24 ,  H01S5/2277

    摘要： A semiconductor laser device comprises an active layer, a current blocking striped-channel formed below the active layer in such a manner that light in the active layer for laser oscillation is absorbed by both shoulders of the striped channel, this results in an index-guided optical waveguide being formed within the active layer. Mesa channels are formed outside of the optical waveguide in a manner to cut off. The active layer, the distance between the mesa-channels is greater than the distance between the shoulders of said striped channel.

    摘要翻译： 半导体激光器件包括有源层，形成在有源层下面的电流阻挡条纹沟道，以使激光振荡的有源层中的光被条纹沟道的两个肩部吸收，这导致指数指导 光波导形成在有源层内。 在光波导的外侧以切断的方式形成Mesa沟道。 活动层，台面通道之间的距离大于所述条纹通道的肩部之间的距离。

    Window structure semiconductor laser
    28.
    发明授权
    Window structure semiconductor laser 失效
    窗结构半导体激光器

    公开(公告)号：US4546481A

    公开(公告)日：1985-10-08

    申请号：US476844

    申请日：1983-03-18

    申请人： Saburo Yamamoto ,  Hiroshi Hayashi ,  Seiki Yano

    发明人： Saburo Yamamoto ,  Hiroshi Hayashi ,  Seiki Yano

    IPC分类号： H01S5/16 ,  H01S5/223 ,  H01S5/24 ,  H01S3/19

    CPC分类号： H01S5/24 ,  H01S5/16 ,  H01S5/2234

    摘要： A window V-channeled substrate inner stripe semiconductor laser which includes window regions formed at both ends of a stimulated region. The stimulated region includes a crescent active layer, and each of the window regions includes a plane active layer for transferring the laser beam emitted from the stimulated region to the mirror. The window regions ensure a stable operation of the laser oscillation and a high optical power for catastrophic optical damage.

    摘要翻译： 窗口V沟道衬底内条半导体激光器，其包括形成在受激区域的两端的窗口区域。 受激区域包括新月活性层，并且每个窗口区域包括用于将从被刺激区域发射的激光束传送到反射镜的平面有源层。 窗口区域确保激光振荡的稳定操作和用于灾难性光学损伤的高光功率。