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    Semiconductor laser device having substriped channels for forming an active layer which is thin in an inside portion
    1.
    发明授权
    Semiconductor laser device having substriped channels for forming an active layer which is thin in an inside portion 失效
    具有用于形成在内部较薄的有源层的分流通道的半导体激光器件

    公开(公告)号：US4819245A

    公开(公告)日：1989-04-04

    申请号：US854627

    申请日：1986-04-22

    申请人： Taiji Morimoto ,  Mototaka Taneya ,  Hiroshi Hayashi ,  Saburo Yamamoto

    发明人： Taiji Morimoto ,  Mototaka Taneya ,  Hiroshi Hayashi ,  Saburo Yamamoto

    IPC分类号： H01S5/16 ,  H01S5/223 ,  H01S3/19

    CPC分类号： H01S5/16 ,  H01S5/2232 ,  H01S5/2234

    摘要： A semiconductor laser device comprises a substrate having a main striped channel for confining current therein and sub-striped channels formed in a parallel manner outside of the main striped channel. The width of the sub-striped channels is greater than that of the main striped channel. An active layer is provided for laser oscillation. The portion of the active layer corresponding to the sub-striped channels are formed into a concave portion. The portion of the active layer positioned between the concaved portions of the active layer results in a plane with a limited thickness.

    摘要翻译： 半导体激光器件包括具有用于限制电流的主条纹沟道的衬底和在主条纹沟道外部并行形成的子条纹沟道。 子条带通道的宽度大于主条带通道的宽度。 为激光振荡提供有源层。 对应于子条纹通道的有源层的部分形成为凹入部分。 位于有源层的凹部之间的有源层的部分导致具有有限厚度的平面。

    Window VSIS semiconductor laser
    2.
    发明授权
    Window VSIS semiconductor laser 失效
    窗口VSIS半导体激光器

    公开(公告)号：US4686679A

    公开(公告)日：1987-08-11

    申请号：US713832

    申请日：1985-03-20

    申请人： Seiki Yano ,  Saburo Yamamoto ,  Hiroshi Hayashi ,  Taiji Morimoto

    发明人： Seiki Yano ,  Saburo Yamamoto ,  Hiroshi Hayashi ,  Taiji Morimoto

    IPC分类号： H01S5/16 ,  H01S5/223 ,  H01S5/24 ,  H01S3/19

    CPC分类号： H01S5/16 ,  H01S5/24 ,  H01S5/2234

    摘要： A window VSIS semiconductor laser includes a stimulated region and window regions formed on both ends of the stimulated region. A V-shaped groove is formed in a substrate, and an active layer is formed on the substrate. In one preferred form, the V-shaped groove has a wider width in the stimulated region as compared with the V-shaped groove formed in the window regions. The active layer is a crescent active layer in the stimulated region. One edge of the V-shaped groove in the stimulated region is continuously aligned on a line to the corresponding edge of the V-shaped groove formed in the window regions so as to enhance the optical coupling. In another preferred form, indents are formed in the substrate in the window regions in a manner to sandwich the V-shaped groove formed in the window regions. The V-shaped groove has the same width in the stimulated region and in the window regions. The active layer is plane shaped in the stimulated region, and a thickness of the active layer in the stimulated region is thicker than the active layer formed in the window regions.

    Epitaxial growth process for the production of a window semiconductor laser
    5.
    发明授权
    Epitaxial growth process for the production of a window semiconductor laser 失效
    用于生产窗口半导体激光的外延生长工艺

    公开(公告)号：US5087587A

    公开(公告)日：1992-02-11

    申请号：US12249

    申请日：1987-02-09

    申请人： Taiji Morimoto ,  Shigeki Maei ,  Hiroshi Hayashi ,  Saburo Yamamoto

    发明人： Taiji Morimoto ,  Shigeki Maei ,  Hiroshi Hayashi ,  Saburo Yamamoto

    IPC分类号： H01S5/16 ,  H01S5/223 ,  H01S5/24

    CPC分类号： H01S5/16 ,  H01S5/2232 ,  H01S5/2234 ,  H01S5/24 ,  Y10S148/095

    摘要： A window semiconductor laser device comprising a stripe-channeled substrate, an active layer for laser oscillation and a cladding layer disposed under the active layer, wherein the surface of the active layer is flat and the thickness of the portion of the active layer corresponding to the striped channel of said substrate in each of the window regions in the vicinity of the facets is thinner than that of the portion of the active corresponding to the striped channel of said substrate in the stimulated region positioned between the window regions.

    摘要翻译： 一种窗口半导体激光器件，包括条形沟道衬底，用于激光振荡的有源层和设置在有源层下面的覆层，其中有源层的表面是平坦的，并且有源层的部分的厚度对应于 在小平面附近的每个窗口区域中的每个窗口区域中的所述衬底的条纹沟道比在位于窗口区域之间的被刺激区域中对应于所述衬底的条纹沟道的部分的活性部分的条纹沟道薄。

    Compound resonator type semiconductor laser device
    6.
    发明授权
    Compound resonator type semiconductor laser device 失效
    复合谐振器型半导体激光器件

    公开(公告)号：US4737962A

    公开(公告)日：1988-04-12

    申请号：US734091

    申请日：1985-05-15

    申请人： Saburo Yamamoto ,  Hiroshi Hayashi ,  Nobuyuki Miyauchi ,  Shigeki Maei ,  Taiji Morimoto

    发明人： Saburo Yamamoto ,  Hiroshi Hayashi ,  Nobuyuki Miyauchi ,  Shigeki Maei ,  Taiji Morimoto

    IPC分类号： H01S3/082 ,  H01S5/028 ,  H01S5/062 ,  H01S5/10 ,  H01S5/24 ,  H01S5/40 ,  H01S3/19 ,  H01S3/10

    CPC分类号： H01S5/24 ,  H01S3/082 ,  H01S5/028 ,  H01S5/1032 ,  H01S5/0622 ,  H01S5/10 ,  H01S5/4056

    摘要： A compound resonator type semiconductor laser device comprising a multiple-layered crystal structure having a first laser operation area which contains a resonator for laser oscillation and a second laser operation area which contains a resonator a facet of which is shared with that of the resonator in the first laser operation area; and an electric current feeder for injecting a current into said multiple-layered crystal structure, and wherein said facet of the resonator in the first laser operation area, which is shared with the facet of the resonator in the second laser operation area, is covered with a protective film to attain a high reflectivity therein, the other facet of the resonator in the first laser operation area is covered with a protective film to attain a low reflectivity therein, and the other facet of the resonator in the second laser operation area is covered with a protective film to attain a high reflectivity therein.

    摘要翻译： 一种复合谐振器型半导体激光器件，包括具有第一激光器操作区域的多层晶体结构，所述第一激光器操作区域包含用于激光振荡的谐振器，以及第二激光器操作区域，所述第二激光器操作区域包含与所述谐振器的谐振器共面的谐振器 第一激光手术区; 以及用于将电流注入到所述多层晶体结构中的电流馈送器，并且其中在所述第二激光操作区域中与所述谐振器的面共享的所述第一激光器操作区域中的谐振器的所述小面被覆盖 保护膜以在其中获得高反射率，第一激光操作区域中的谐振器的另一个面被保护膜覆盖以在其中获得低反射率，并且覆盖第二激光操作区域中的谐振器的另一个面 具有保护膜以在其中获得高反射率。

    Internal-reflection-interference semiconductor laser device
    7.
    发明授权
    Internal-reflection-interference semiconductor laser device 失效
    内反射干涉半导体激光器件

    公开(公告)号：US4720834A

    公开(公告)日：1988-01-19

    申请号：US807867

    申请日：1985-12-11

    申请人： Osamu Yamamoto ,  Hiroshi Hayashi ,  Taiji Morimoto ,  Saburo Yamamoto

    发明人： Osamu Yamamoto ,  Hiroshi Hayashi ,  Taiji Morimoto ,  Saburo Yamamoto

    IPC分类号： H01S5/00 ,  H01S3/082 ,  H01S5/042 ,  H01S5/10 ,  H01S5/22 ,  H01S3/19

    CPC分类号： H01S3/082 ,  H01S5/10 ,  H01S5/1021 ,  H01S5/22

    摘要： An internal-reflection-interference semiconductor laser device comprising a first laser operation area ranging from one facet to the internal reflecting section and a second laser operation area ranging from the other facet to the internal reflecting section, wherein when the internal-cavity length l.sub.1 of the first laser operation area is shorter than the internal-cavity length l.sub.2 of the second laser operation area, the reflectivity R.sub.1 at the facet on the side of the first laser operation area is smaller than the reflectivity R.sub.2 at the facet on the side of the second laser operation area.

    摘要翻译： 一种内反射干涉半导体激光器件，包括从一个面到内部反射部的范围的第一激光操作区域和从另一个面到内部反射部的范围的第二激光操作区域，其中当内部反射干涉半导体激光器的内腔长度l1 第一激光操作区域比第二激光器操作区域的内腔长度l2短，第一激光操作区域侧面上的反射率R1小于第一激光器操作区域侧面上的反射率R2 第二激光操作区域。

    Semiconductor laser device
    8.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US4819244A

    公开(公告)日：1989-04-04

    申请号：US870450

    申请日：1986-06-04

    申请人： Saburo Yamamoto ,  Hiroshi Hayashi ,  Taiji Morimoto

    发明人： Saburo Yamamoto ,  Hiroshi Hayashi ,  Taiji Morimoto

    IPC分类号： H01S5/00 ,  H01S5/02 ,  H01S5/223 ,  H01S5/227 ,  H01S5/24 ,  H01S3/19

    CPC分类号： H01S5/02 ,  H01S5/0217 ,  H01S5/2232 ,  H01S5/2275 ,  H01S5/24

    摘要： A V-channel inner stripe semiconductor laser device comprising a multi-layered growth crystal having an active layer for laser oscillation but no substrate, with a buffer layer formed on the multi-layered growth crystal thicker than all of the layers of the growth crystal, where the multi-layered growth crystal and buffer layer are sandwiched between an n-sided electrode and a p-sided electrode, wherein a pair of mesa-striped channels are formed outside of the V-channel to remove the outside of the optical waveguide formed in the active layer corresponding to the V-channel.

    摘要翻译： 一种V沟道内条状半导体激光器件，包括具有用于激光振荡的有源层但不具有衬底的多层生长晶体，其中形成在比生长晶体的所有层厚的多层生长晶体上的缓冲层， 其中多层生长晶体和缓冲层夹在n侧电极和p侧电极之间，其中在V沟道外部形成一对台面条纹沟槽以去除形成的光波导的外部 在对应于V通道的有源层中。