公开(公告)号：US20110121418A1

公开(公告)日：2011-05-26

申请号：US13015320

申请日：2011-01-27

申请人： Haiwen Xi ,  Kaizhong Gao ,  Dimitar V. Dimitrov ,  Song S. Xue

发明人： Haiwen Xi ,  Kaizhong Gao ,  Dimitar V. Dimitrov ,  Song S. Xue

IPC分类号： H01L29/82 ,  H01L21/02

CPC分类号： H01L43/08 ,  G11C11/16 ,  G11C11/1675 ,  Y10T428/1114 ,  Y10T428/1121

摘要： A free ferromagnetic data storage layer of an MRAM cell is coupled to a free ferromagnetic stabilization layer, which stabilization layer is directly electrically coupled to a contact electrode, on one side, and is separated from the free ferromagnetic data storage layer, on an opposite side, by a spacer layer. The spacer layer provides for the coupling between the two free layers, which coupling is one of: a ferromagnetic coupling and an antiferromagnetic coupling.

摘要翻译： MRAM单元的自由铁磁数据存储层耦合到自由铁磁稳定层，该稳定层在一侧直接电耦合到接触电极，并在相对侧与自由铁磁数据存储层分离 ，通过间隔层。 间隔层提供两个自由层之间的耦合，该耦合是以下之一：铁磁耦合和反铁磁耦合。

公开(公告)号：US20110069537A1

公开(公告)日：2011-03-24

申请号：US12958106

申请日：2010-12-01

申请人： Kaizhong Gao ,  Haiwen Xi ,  Yiming Shi ,  Song S. Xue ,  Sining Mao

发明人： Kaizhong Gao ,  Haiwen Xi ,  Yiming Shi ,  Song S. Xue ,  Sining Mao

IPC分类号： G11C11/16 ,  G11C11/15

CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673

摘要： The present invention relates to a memory cell including a first reference layer having a first magnetization with a first magnetization direction and a second reference layer having a second magnetization with a second magnetization direction substantially perpendicular to the first magnetization direction. A storage layer is disposed between the first reference layer and second reference layer and has a third magnetization direction about 45° from the first magnetization direction and about 135° from the second magnetization direction when the memory cell is in a first data state, and a fourth magnetization direction opposite the third magnetization direction when the memory cell is in a second data state.

摘要翻译： 本发明涉及包括具有第一磁化方向的第一磁化的第一参考层和具有基本上垂直于第一磁化方向的第二磁化方向的第二磁化的第二参考层的存储单元。 存储层设置在第一参考层和第二参考层之间，并且当存储单元处于第一数据状态时，具有从第一磁化方向大约45°的第三磁化方向和从第二磁化方向开始的大约135°的存储层， 当存储单元处于第二数据状态时与第三磁化方向相反的第四磁化方向。

公开(公告)号：US07880209B2

公开(公告)日：2011-02-01

申请号：US12248257

申请日：2008-10-09

申请人： Haiwen Xi ,  Kaizhong Gao ,  Dimitar V. Dimitrov ,  Song S. Xue

发明人： Haiwen Xi ,  Kaizhong Gao ,  Dimitar V. Dimitrov ,  Song S. Xue

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  G11C11/16 ,  G11C11/1675 ,  Y10T428/1114 ,  Y10T428/1121

摘要： A free ferromagnetic data storage layer of an MRAM cell is coupled to a free ferromagnetic stabilization layer, which stabilization layer is directly electrically coupled to a contact electrode, on one side, and is separated from the free ferromagnetic data storage layer, on an opposite side, by a spacer layer. The spacer layer provides for the coupling between the two free layers, which coupling is one of: a ferromagnetic coupling and an antiferromagnetic coupling.

摘要翻译： MRAM单元的自由铁磁数据存储层耦合到自由铁磁稳定层，该稳定层在一侧直接电耦合到接触电极，并在相对侧与自由铁磁数据存储层分离 ，通过间隔层。 间隔层提供两个自由层之间的耦合，该耦合是以下之一：铁磁耦合和反铁磁耦合。

公开(公告)号：US07859069B2

公开(公告)日：2010-12-28

申请号：US11724740

申请日：2007-03-16

申请人： Kaizhong Gao ,  Haiwen Xi ,  Yiming Shi ,  Song S. Xue ,  Sining Mao

发明人： Kaizhong Gao ,  Haiwen Xi ,  Yiming Shi ,  Song S. Xue ,  Sining Mao

IPC分类号： G11C11/15

CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673

摘要： The present invention relates to a memory cell including a first reference layer having a first magnetization with a first magnetization direction and a second reference layer having a second magnetization with a second magnetization direction substantially perpendicular to the first magnetization direction. A storage layer is disposed between the first reference layer and second reference layer and has a third magnetization direction about 45° from the first magnetization direction and about 135° from the second magnetization direction when the memory cell is in a first data state, and a fourth magnetization direction opposite the third magnetization direction when the memory cell is in a second data state.

摘要翻译： 本发明涉及包括具有第一磁化方向的第一磁化的第一参考层和具有基本上垂直于第一磁化方向的第二磁化方向的第二磁化的第二参考层的存储单元。 存储层设置在第一参考层和第二参考层之间，并且当存储单元处于第一数据状态时，具有从第一磁化方向大约45°的第三磁化方向和从第二磁化方向开始的大约135°的存储层， 当存储单元处于第二数据状态时与第三磁化方向相反的第四磁化方向。

公开(公告)号：US07672091B2

公开(公告)日：2010-03-02

申请号：US11376014

申请日：2006-03-15

申请人： Song S. Xue ,  Paul E. Anderson ,  Kaizhong Gao ,  Kristin Duxstad

发明人： Song S. Xue ,  Paul E. Anderson ,  Kaizhong Gao ,  Kristin Duxstad

IPC分类号： G11B5/39

CPC分类号： G11B5/3903 ,  G11B2005/0018

摘要： A device resets a biasing magnetization of a biasing element in a magnetic sensor. The device includes a magnetic structure that is magnetically coupled to the biasing element. A conductive element is disposed around at least a portion of the magnetic structure. When a current is passed through the conductive element, a magnetic field is produced that resets the biasing magnetization of the biasing element.

摘要翻译： 器件复位磁传感器中的偏置元件的偏置磁化强度。 该装置包括磁耦合到偏压元件的磁性结构。 导电元件围绕磁性结构的至少一部分设置。 当电流通过导电元件时，产生磁场，该磁场使偏置元件的偏置磁化复位。

公开(公告)号：US20100033872A1

公开(公告)日：2010-02-11

申请号：US12496505

申请日：2009-07-01

申请人： Haiwen Xi ,  Kaizhong Gao ,  Song S. Xue

发明人： Haiwen Xi ,  Kaizhong Gao ,  Song S. Xue

IPC分类号： G11B5/82 ,  B05D5/12

CPC分类号： G11B5/82 ,  B82Y10/00 ,  G11B5/743 ,  G11B5/746 ,  G11B5/855

摘要： A bit patterned media (BPM) includes many magnetic dots arranged in tracks on a substrate. The magnetic dots each have a hard magnetic core, a soft magnetic cladding surrounding the core and a thin non-magnetic layer that separates the hard magnetic core from the soft magnetic ring. The soft magnetic cladding stabilizes the magnetization at the edges of the hard magnetic core to improve the signal to noise ratio of the magnetic dots. The soft magnetic rings also narrow the magnetic field of the dots which reduces the space requirements and allows more dots to be placed on the substrate.

摘要翻译： 位图案介质（BPM）包括布置在基板上的轨道中的许多磁点。 磁点各自具有硬磁芯，围绕芯的软磁性包层以及将硬磁芯与软磁环分离的薄的非磁性层。 软磁性包层使硬磁芯的边缘处的磁化稳定，以提高磁点的信噪比。 软磁环还使点的磁场变窄，这减小了空间要求，并允许更多的点放置在基板上。

公开(公告)号：US20080225584A1

公开(公告)日：2008-09-18

申请号：US11724740

申请日：2007-03-16

申请人： Kaizhong Gao ,  Haiwen Xi ,  Yiming Shi ,  Song S. Xue ,  Sining Mao

发明人： Kaizhong Gao ,  Haiwen Xi ,  Yiming Shi ,  Song S. Xue ,  Sining Mao

IPC分类号： G11C11/15

CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673

摘要： The present invention relates to a memory cell including a first reference layer having a first magnetization with a first magnetization direction and a second reference layer having a second magnetization with a second magnetization direction substantially perpendicular to the first magnetization direction. A storage layer is disposed between the first reference layer and second reference layer and has a third magnetization direction about 45° from the first magnetization direction and about 135° from the second magnetization direction when the memory cell is in a first data state, and a fourth magnetization direction opposite the third magnetization direction when the memory cell is in a second data state.

摘要翻译： 本发明涉及包括具有第一磁化方向的第一磁化的第一参考层和具有基本上垂直于第一磁化方向的第二磁化方向的第二磁化的第二参考层的存储单元。 存储层设置在第一参考层和第二参考层之间，并且当存储单元处于第一数据状态时，具有从第一磁化方向大约45°的第三磁化方向和从第二磁化方向开始的大约135°的存储层， 当存储单元处于第二数据状态时与第三磁化方向相反的第四磁化方向。

公开(公告)号：US07848139B2

公开(公告)日：2010-12-07

申请号：US12233389

申请日：2008-09-18

申请人： Yizhang Yang ,  Haiwen Xi ,  Yiming Shi ,  Kaizhong Gao ,  Jun Ouyang ,  Song S. Xue

发明人： Yizhang Yang ,  Haiwen Xi ,  Yiming Shi ,  Kaizhong Gao ,  Jun Ouyang ,  Song S. Xue

IPC分类号： G11C11/00

CPC分类号： G11C13/004 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/0045 ,  G11C2013/0078 ,  G11C2013/008 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1226 ,  H01L45/1286 ,  H01L45/144

摘要： A conductive write line of a memory device includes a resistive heating portion for setting and resetting a phase-change material (PCM) storage cell of the device. A dielectric interface extends between the resistive heating portion of the write line and a side of the storage cell, and provides electrical insulation while allowing for thermal coupling between the resistive heating portion and the storage cell. A width of the resistive heating portion of the write line may be less than a width of the storage cell and/or may be less than a width of adjacent portions of the write line, between which the resistive heating portion extends. The side of the storage cell may define a channel of the storage cell through which the write line passes, such that the resistive heating portion is located within the channel.

摘要翻译： 存储器件的导电写入线包括用于设置和复位器件的相变材料（PCM）存储单元的电阻加热部分。 电介质界面在写入线的电阻加热部分和存储单元的一侧之间延伸，并提供电绝缘，同时允许电阻加热部分和存储单元之间的热耦合。 写入线的电阻加热部分的宽度可以小于存储单元的宽度和/或可以小于写入线的相邻部分的宽度，电阻加热部分在其之间延伸。 存储单元的侧面可以限定写入线通过的存储单元的通道，使得电阻加热部分位于通道内。

公开(公告)号：US08766382B2

公开(公告)日：2014-07-01

申请号：US13015320

申请日：2011-01-27

申请人： Haiwen Xi ,  Kaizhong Gao ,  Dimitar V. Dimitrov ,  Song S. Xue

发明人： Haiwen Xi ,  Kaizhong Gao ,  Dimitar V. Dimitrov ,  Song S. Xue

IPC分类号： H01L29/82 ,  H01L43/08 ,  G11C11/16

CPC分类号： H01L43/08 ,  G11C11/16 ,  G11C11/1675 ,  Y10T428/1114 ,  Y10T428/1121

摘要： A free ferromagnetic data storage layer of an MRAM cell is coupled to a free ferromagnetic stabilization layer, which stabilization layer is directly electrically coupled to a contact electrode, on one side, and is separated from the free ferromagnetic data storage layer, on an opposite side, by a spacer layer. The spacer layer provides for the coupling between the two free layers, which coupling is one of: a ferromagnetic coupling and an antiferromagnetic coupling.

摘要翻译： MRAM单元的自由铁磁数据存储层耦合到自由铁磁稳定层，该稳定层在一侧直接电耦合到接触电极，并在相对侧与自由铁磁数据存储层分离 ，通过间隔层。 间隔层提供两个自由层之间的耦合，该耦合是以下之一：铁磁耦合和反铁磁耦合。

公开(公告)号：US08147995B2

公开(公告)日：2012-04-03

申请号：US12496505

申请日：2009-07-01

申请人： Haiwen Xi ,  Kaizhong Gao ,  Song S. Xue

发明人： Haiwen Xi ,  Kaizhong Gao ,  Song S. Xue

IPC分类号： B44C1/22 ,  G11B5/66

CPC分类号： G11B5/82 ,  B82Y10/00 ,  G11B5/743 ,  G11B5/746 ,  G11B5/855

摘要： A bit patterned media (BPM) includes many magnetic dots arranged in tracks on a substrate. The magnetic dots each have a hard magnetic core, a soft magnetic cladding surrounding the core and a thin non-magnetic layer that separates the hard magnetic core from the soft magnetic ring. The soft magnetic cladding stabilizes the magnetization at the edges of the hard magnetic core to improve the signal to noise ratio of the magnetic dots. The soft magnetic rings also narrow the magnetic field of the dots which reduces the space requirements and allows more dots to be placed on the substrate.

摘要翻译： 位图案介质（BPM）包括布置在基板上的轨道中的许多磁点。 磁点各自具有硬磁芯，围绕芯的软磁性包层以及将硬磁芯与软磁环分离的薄的非磁性层。 软磁性包层使硬磁芯的边缘处的磁化稳定，以提高磁点的信噪比。 软磁环还使点的磁场变窄，这减小了空间要求，并允许更多的点放置在基板上。