Integrated circuit using FDSOI technology, with well sharing and means for biasing oppositely doped ground planes present in a same well
    21.
    发明授权
    Integrated circuit using FDSOI technology, with well sharing and means for biasing oppositely doped ground planes present in a same well 有权
    使用FDSOI技术的集成电路,具有良好的共享和用于偏置存在于同一井中的相反掺杂的接地平面的装置

    公开(公告)号:US09093499B2

    公开(公告)日:2015-07-28

    申请号:US13627059

    申请日:2012-09-26

    摘要: A manufacture includes an IC comprising a stacking of a semiconducting substrate, a buried insulating layer, and a semiconducting layer, a first electronic component formed in and/or on the semiconductor layer, a bias circuit to generate a first bias voltage, first and second via-type interconnections, to which the bias circuit applies a same bias voltage equal to the first bias voltage, a first insulation trench separating the first electronic component from the first and second interconnections, a first ground plane having a first type of doping, placed beneath the buried insulating layer plumb with the first electronic component, and extending beneath the first insulation trench and up into contact the first interconnection, and a first well having a second type of doping opposite that of the first type, plumb with the first ground plane, and extending beneath the first insulation trench and up into contact with the second interconnection.

    摘要翻译: 一种制造方法包括:IC,其包括半导体衬底,掩埋绝缘层和半导体层的堆叠;形成在半导体层中和/或上的半导体层的第一电子部件;产生第一偏置电压的偏置电路;第一和第二 偏置电路施加与第一偏置电压相同的偏置电压的通孔型互连,将第一电子部件与第一和第二互连分开的第一绝缘沟槽,具有第一类型的掺杂的第一接地平面 在第一电子部件的埋置绝缘层铅垂之下,并且在第一绝缘沟槽下方延伸并且与第一互连接触,并且具有与第一类型相反的第二类型掺杂的第一阱具有第一接地层 并且在第一绝缘沟槽下方延伸并与第二互连接触。

    Substrate provided with a semi-conducting area associated with two counter-electrodes and device comprising one such substrate
    22.
    发明授权
    Substrate provided with a semi-conducting area associated with two counter-electrodes and device comprising one such substrate 有权
    衬底设置有与两个对电极相关联的半导电区域和包括一个这样的衬底的器件

    公开(公告)号:US08674443B2

    公开(公告)日:2014-03-18

    申请号:US13164164

    申请日:2011-06-20

    IPC分类号: H01L27/12

    摘要: A support substrate comprises first and second counter-electrodes arranged in the same plane at the level of a surface of the support substrate. An electrically insulating area separates the first and second counter-electrodes. A semi-conducting area with first and second portions is separated from the support substrate by an electrically insulating material. The electrically insulating material is different from the material forming the support substrate. The first portion of the semi-conducting area is facing the first counter-electrode. The second portion of the semi-conducting area is facing the second counter-electrode.

    摘要翻译: 支撑基板包括在支撑基板的表面的高度处布置在同一平面中的第一和第二对置电极。 电绝缘区域分离第一和第二对置电极。 具有第一和第二部分的半导体区域通过电绝缘材料与支撑衬底分离。 电绝缘材料与形成支撑基板的材料不同。 半导电区域的第一部分面向第一对置电极。 半导体区域的第二部分面向第二对置电极。

    SRAM memory cell with double gate transistors provided means to improve the write margin
    23.
    发明授权
    SRAM memory cell with double gate transistors provided means to improve the write margin 失效
    具有双栅极晶体管的SRAM存储单元提供了提高写入裕度的手段

    公开(公告)号:US08320198B2

    公开(公告)日:2012-11-27

    申请号:US12866821

    申请日:2009-02-16

    IPC分类号: G11C7/00

    CPC分类号: G11C11/412

    摘要: A random access memory cell including: two double-gate access transistors respectively arranged between a first bit line and a first storage node and between a second bit line and a second storage node, a word line, a first double-gate load transistor and a second double-gate load transistor, a first double-gate driver transistor and a second double-gate driver transistor, a mechanism to apply a given potential to at least one electrode of each of the load or driver transistors, and a mechanism to cause the given potential to vary.

    摘要翻译: 一种随机存取存储单元,包括:分别布置在第一位线和第一存储节点之间以及第二位线和第二存储节点之间的两个双栅极存取晶体管,字线,第一双栅极负载晶体管和 第二双栅极负载晶体管,第一双栅极驱动晶体管和第二双栅极驱动晶体管,将给定电位施加到每个负载或驱动晶体管的至少一个电极的机构,以及使得 给予潜力有所不同。

    Method and device for introducing precursors into chamber for chemical
vapor deposition
    27.
    发明授权
    Method and device for introducing precursors into chamber for chemical vapor deposition 失效
    将前体引入化学气相沉积室的方法和装置

    公开(公告)号:US5945162A

    公开(公告)日:1999-08-31

    申请号:US583090

    申请日:1996-06-17

    IPC分类号: B01D1/18 C23C16/448 C23C16/00

    CPC分类号: B01D1/18 C23C16/4486

    摘要: A method is disclosed for introducing into a chemical vapor deposition chamber precursors of elements to be deposited over a heated substrate. The method comprises the steps of maintaining one or more precursors in liquid form or in solution at a pressure higher than the pressure of the chamber; injecting periodically and under control in the deposition chamber precursor droplets each of the droplets having a controllable volume; volatizing the injected precursor droplets to produce evaporated precursors, and conveying toward the substrate the evaporated precursors at a temperature and pressure of the chamber, whereby the evaporated precursors react to produce the elements deposited onto the substrate. A device for performing the same is also disclosed and includes at least one tank containing precursors in liquid form or in solution; means for maintaining each tank at a pressure higher than the pressure of the chamber; at least one controlled injector associated with each tank and provided with control means for periodically injecting controlled amounts of precursor droplets into the deposition chamber; means for volatizing said injected precursor droplets to produce evaporated precursors, and means for conveying the evaporated precursors to the substrate disposed in the deposition chamber.

    摘要翻译: PCT No.PCT / FR94 / 00858 Sec。 371日期1996年6月17日第 102(e)日期1996年6月17日PCT提交1994年7月8日PCT公布。 第WO95 / 02711号公报 日期1995年1月26日公开了一种用于将待沉积在加热衬底上的元件的化学气相沉积室引入的方法。 该方法包括以高于室压力的压力将一种或多种前体保持在液体形式或溶液中的步骤; 在沉积室前体中周期性地和在控制下注入,每个液滴具有可控制的体积; 挥发注入的前体液滴以产生蒸发的前体,以及在室的温度和压力下朝向基底输送蒸发的前体,由此蒸发的前体反应以产生沉积在基底上的元素。 还公开了用于执行该装置的装置,并且包括至少一个容纳液体形式或溶液中的前体的罐; 用于将每个罐保持在高于室的压力的压力的装置; 与每个罐相关联的至少一个受控喷射器,并设置有控制装置,用于将受控数量的前体液滴周期性地注入到沉积室中; 用于挥发所述注射的前体液滴以产生蒸发的前体的装置,以及用于将蒸发的前体输送到设置在沉积室中的基材的装置。

    Method of preparing lipid nanoparticles
    28.
    发明授权
    Method of preparing lipid nanoparticles 有权
    制备脂质纳米粒子的方法

    公开(公告)号:US09302241B2

    公开(公告)日:2016-04-05

    申请号:US13139401

    申请日:2009-12-11

    IPC分类号: A61K9/50 B01J13/04

    CPC分类号: B01J13/04

    摘要: Provided is a method for preparing nanocapsules having a liquid lipid core and a solid shell and charged in their lipid core with at least one hydrophilic active agent involving combining microemulsions where the active agent remains in the hydrophilic phase of a first microemulsion and chill-hardening the mixture to obtain the nanocapsules charged with the hydrophilic active agent. The nanocapsules comprise the lipid core which is liquid at room temperature and the nanocapsules are encapsulated in a film which is solid at room temperature.

    摘要翻译: 提供了一种制备具有液体脂质核和固体壳的纳米胶囊的方法,并且在其脂质核心中装入至少一种亲水性活性剂,其包括组合微乳液,其中活性剂保留在第一微乳液的亲水相中,并冷却硬化 混合物以获得装有亲水性活性剂的纳米胶囊。 纳米胶囊包含在室温下为液体的脂质核,纳米胶囊包封在室温下为固体的膜中。

    Multi-level integrated circuit, device and method for modeling multi-level integrated circuits
    29.
    发明授权
    Multi-level integrated circuit, device and method for modeling multi-level integrated circuits 失效
    多级集成电路,多级集成电路建模的设备和方法

    公开(公告)号:US08710671B2

    公开(公告)日:2014-04-29

    申请号:US13335213

    申请日:2011-12-22

    IPC分类号: H01L23/48 H01L23/538

    摘要: A multi-level integrated circuit, having a superposition of a first stack and a second stack of layers, and including a first row of electronic devices produced in the first stack, extending parallel to a first direction and fitting into a first volume with a substantially parallelepiped rectangle shape and having edges perpendicular to the first direction and with dimension H1; a second row of electronic devices produced in the second stack, extending parallel to the first direction and fitting into a second volume with a substantially parallelepiped rectangle shape and having edges perpendicular to the first direction and with dimension H2

    摘要翻译: 一种多级集成电路,具有第一叠层和第二层叠层的叠加,并且包括在第一堆叠中制造的第一排电子器件,其平行于第一方向延伸并且装配到具有基本上 平行六面体矩形形状并且具有垂直于第一方向和尺寸H1的边缘; 在第二堆叠中生产的第二排电子装置,其平行于第一方向延伸并且装配成具有基本上平行六面体的矩形形状并具有垂直于第一方向的边缘并具有尺寸H2

    METHOD OF PREPARING LIPID NANOPARTICLES
    30.
    发明申请
    METHOD OF PREPARING LIPID NANOPARTICLES 有权
    制备脂质纳米颗粒的方法

    公开(公告)号:US20120027825A1

    公开(公告)日:2012-02-02

    申请号:US13139401

    申请日:2009-12-11

    CPC分类号: B01J13/04

    摘要: The present invention relates to a useful method for preparing nanocapsules having a liquid lipid core and a solid shell and charged with at least one active agent having a hydrophilic character, said method comprising at least the steps consisting in: i) providing at least a first microemulsion having a water-in-oil character, stabilized by at least one lipophilic surfactant and containing in its hydrophilic phase at least one active agent having a hydrophilic character, providing at least a second microemulsion, separate from the first microemulsion, formulated by phase inversion of an emulsion and stabilized by at least one heat-sensitive, nonionic hydrophilic surfactant; iii) adding said first microemulsion to said second microemulsion under conditions propitious for the formation of a novel microemulsion architecture in which said hydrophilic active agent remains present in the hydrophilic phase of the first microemulsion; and iv) chill-hardening the mixture formed in the previous step, so as to obtain nanocapsules comprising said hydrophilic active agent and being formed from a lipid core, which is liquid at room temperature, and encapsulated in a film which is solid at room temperature.Further, the invention relates to nanocapsules which are able to be obtained by said method.

    摘要翻译: 本发明涉及一种制备具有液体脂质核和固体壳并装有至少一种具有亲水特性的活性剂的纳米胶囊的有用方法,所述方法至少包括以下步骤:i)至少提供第一 具有油包水性的微乳液,由至少一种亲脂性表面活性剂稳定,并在其亲水相中含有至少一种具有亲水特性的活性剂,提供至少一种与通过相转化配制的第一微乳液分离的第二微乳液 的乳液并通过至少一种热敏非离子亲水性表面活性剂稳定; iii)在有利于形成新型微乳液结构的条件下将所述第一微乳液加入到所述第二微乳液中,其中所述亲水性活性剂保留在第一微乳液的亲水相中; 和iv)冷却前述步骤中形成的混合物,以获得包含所述亲水性活性剂并由在室温下为液体的脂核心形成并包封在室温下为固体的膜的纳米胶囊 。 此外,本发明涉及能够通过所述方法获得的纳米胶囊。