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    Extreme ultraviolet lithography process and mask
    21.
    发明授权
    Extreme ultraviolet lithography process and mask 有权
    极紫外光刻工艺和面膜

    公开(公告)号：US08841047B2

    公开(公告)日：2014-09-23

    申请号：US13437099

    申请日：2012-04-02

    申请人： Shinn-Sheng Yu ,  Yen-Cheng Lu ,  Anthony Yen

    发明人： Shinn-Sheng Yu ,  Yen-Cheng Lu ,  Anthony Yen

    IPC分类号： G03F1/00

    CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/48 ,  G03F1/58 ,  G03F7/7015 ,  G03F7/70191

    摘要： A process of an extreme ultraviolet lithography (EUVL) is disclosed. The process includes receiving an extreme ultraviolet (EUV) mask with multiple states. Different states of the EUV mask are assigned to adjacent polygons and a field. The EUV mask is exposed by a nearly on-axis illumination (ONI) with partial coherence σ less than 0.3 to produce diffracted lights and non-diffracted lights. Most of the non-diffracted lights are removed. The diffracted lights and the not removed non-diffracted lights are collected and directed to expose a target by a projection optics box.

    摘要翻译： 公开了一种极紫外光刻（EUVL）的方法。 该方法包括接收具有多种状态的极紫外（EUV）掩模。 EUV掩模的不同状态被分配给相邻的多边形和一个场。 EUV掩模由具有部分相干性的几乎轴向照明（ONI）暴露; 小于0.3以产生衍射光和非衍射光。 大部分非衍射光被去除。 衍射光和未被去除的非衍射光被收集并引导以通过投影光学盒曝光目标。

    Extreme Ultraviolet Lithography Mask and Multilayer Deposition Method for Fabricating Same
    22.
    发明申请
    Extreme Ultraviolet Lithography Mask and Multilayer Deposition Method for Fabricating Same 有权
    极紫外光刻面和多层沉积方法制作相同

    公开(公告)号：US20140038090A1

    公开(公告)日：2014-02-06

    申请号：US13567900

    申请日：2012-08-06

    申请人： Yen-Cheng Lu ,  Shinn-Sheng Yu ,  Anthony Yen

    发明人： Yen-Cheng Lu ,  Shinn-Sheng Yu ,  Anthony Yen

    IPC分类号： G03F1/24 ,  G03F7/20

    CPC分类号： G03F1/24 ,  G03F1/52

    摘要： A mask, method of fabricating same, and method of using same are disclosed. In an example, a mask includes a substrate and a reflective multilayer coating deposited over the substrate. The reflective multilayer coating is formed by positioning the substrate such that an angle α is formed between a normal line of the substrate and particles landing on the substrate and rotating the substrate about an axis that is parallel with a landing direction of the particles. In an example, reflective multilayer coating includes a first layer and a second layer deposited over the first layer. A phase defect region of the reflective multilayer coating includes a first deformation in the first layer at a first location, and a second deformation in the second layer at a second location, the second location laterally displaced from the first location.

    摘要翻译： 公开了一种掩模，其制造方法及其使用方法。 在一个示例中，掩模包括沉积在衬底上的衬底和反射多层涂层。 反射多层涂层通过定位基板形成，使得在基板的法线和着陆在基板上的颗粒之间形成角度α，并使基板围绕与颗粒的着陆方向平行的轴线旋转。 在一个实例中，反射多层涂层包括沉积在第一层上的第一层和第二层。 反射多层涂层的相缺陷区域包括在第一位置处的第一层中的第一变形，以及在第二位置处的第二层中的第二变形，第二位置从第一位置横向移位。

    Extreme ultraviolet lithography process and mask
    23.
    发明授权
    Extreme ultraviolet lithography process and mask 有权
    极紫外光刻工艺和面膜

    公开(公告)号：US08628897B1

    公开(公告)日：2014-01-14

    申请号：US13542458

    申请日：2012-07-05

    申请人： Yen-Cheng Lu ,  Shinn-Sheng Yu ,  Anthony Yen

    发明人： Yen-Cheng Lu ,  Shinn-Sheng Yu ,  Anthony Yen

    IPC分类号： G03F1/24 ,  G03F1/22

    CPC分类号： G03F1/24

    摘要： A process of an extreme ultraviolet lithography (EUVL) is disclosed. The process includes receiving an extreme ultraviolet (EUV) mask with multiple states. Different states of the EUV mask are assigned to adjacent polygons and adjacent sub-resolution polygons. The EUV mask is exposed by a nearly on-axis illumination (ONI) with partial coherence σ less than 0.3 to produce diffracted lights and non-diffracted lights. Most of the non-diffracted lights are removed. The diffracted lights and the not removed non-diffracted lights are collected and directed to expose a target by a projection optics box.

    摘要翻译： 公开了一种极紫外光刻（EUVL）的方法。 该方法包括接收具有多种状态的极紫外（EUV）掩模。 EUV掩模的不同状态被分配给相邻的多边形和相邻的子分辨率多边形。 EUV掩模由几乎在轴上的照明（ONI）曝光，部分相干sigma小于0.3，产生衍射光和非衍射光。 大部分非衍射光被去除。 衍射光和未被去除的非衍射光被收集并引导以通过投影光学盒曝光目标。

    EXTREME ULTRAVIOLET LITHOGRAPHY PROCESS AND MASK
    24.
    发明申请
    EXTREME ULTRAVIOLET LITHOGRAPHY PROCESS AND MASK 有权
    极致超紫外线光刻工艺和掩模

    公开(公告)号：US20140011120A1

    公开(公告)日：2014-01-09

    申请号：US13542458

    申请日：2012-07-05

    申请人： Yen-Cheng Lu ,  Shinn-Sheng Yu ,  Anthony Yen

    发明人： Yen-Cheng Lu ,  Shinn-Sheng Yu ,  Anthony Yen

    IPC分类号： G03F1/24 ,  G03F7/20

    CPC分类号： G03F1/24

    摘要： A process of an extreme ultraviolet lithography (EUVL) is disclosed. The process includes receiving an extreme ultraviolet (EUV) mask with multiple states. Different states of the EUV mask are assigned to adjacent polygons and adjacent sub-resolution polygons. The EUV mask is exposed by a nearly on-axis illumination (ONI) with partial coherence σ less than 0.3 to produce diffracted lights and non-diffracted lights. Most of the non-diffracted lights are removed. The diffracted lights and the not removed non-diffracted lights are collected and directed to expose a target by a projection optics box.

    摘要翻译： 公开了一种极紫外光刻（EUVL）的方法。 该方法包括接收具有多种状态的极紫外（EUV）掩模。 EUV掩模的不同状态被分配给相邻的多边形和相邻的子分辨率多边形。 EUV掩模由几乎在轴上的照明（ONI）曝光，部分相干sigma小于0.3，产生衍射光和非衍射光。 大部分非衍射光被去除。 衍射光和未被去除的非衍射光被收集并引导以通过投影光学盒曝光目标。

    EXTREME ULTRAVIOLET LITHOGRAPHY PROCESS AND MASK
    25.
    发明申请
    EXTREME ULTRAVIOLET LITHOGRAPHY PROCESS AND MASK 有权
    极致超紫外线光刻工艺和掩模

    公开(公告)号：US20130260288A1

    公开(公告)日：2013-10-03

    申请号：US13437099

    申请日：2012-04-02

    申请人： Shinn-Sheng Yu ,  Yen-Cheng Lu ,  Anthony Yen

    发明人： Shinn-Sheng Yu ,  Yen-Cheng Lu ,  Anthony Yen

    IPC分类号： G03F1/24 ,  G03F7/20

    CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/48 ,  G03F1/58 ,  G03F7/7015 ,  G03F7/70191

    摘要： A process of an extreme ultraviolet lithography (EUVL) is disclosed. The process includes receiving an extreme ultraviolet (EUV) mask with multiple states. Different states of the EUV mask are assigned to adjacent polygons and a field. The EUV mask is exposed by a nearly on-axis illumination (ONI) with partial coherence σ less than 0.3 to produce diffracted lights and non-diffracted lights. Most of the non-diffracted lights are removed. The diffracted lights and the not removed non-diffracted lights are collected and directed to expose a target by a projection optics box.

    摘要翻译： 公开了一种极紫外光刻（EUVL）的方法。 该方法包括接收具有多种状态的极紫外（EUV）掩模。 EUV掩模的不同状态被分配给相邻的多边形和一个场。 EUV掩模由几乎在轴上的照明（ONI）曝光，部分相干sigma小于0.3，产生衍射光和非衍射光。 大部分非衍射光被去除。 衍射光和未被去除的非衍射光被收集并引导以通过投影光学盒曝光目标。

    Method of pitch halving
    27.
    发明授权
    Method of pitch halving 有权
    节距减法的方法

    公开(公告)号：US07989355B2

    公开(公告)日：2011-08-02

    申请号：US12370152

    申请日：2009-02-12

    申请人： Ming-Feng Shieh ,  Shinn-Sheng Yu ,  Anthony Yen ,  Ming-Ching Chang ,  Jeff J. Xu

    发明人： Ming-Feng Shieh ,  Shinn-Sheng Yu ,  Anthony Yen ,  Ming-Ching Chang ,  Jeff J. Xu

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/3086 ,  H01L21/3088 ,  H01L21/823828 ,  H01L21/823871 ,  Y10S438/947

    摘要： The present disclosure provides a method of fabricating a semiconductor device that includes forming a mask layer over a substrate, forming a dummy layer having a first dummy feature and a second dummy feature over the mask layer, forming first and second spacer roofs to cover a top portion of the first and second dummy features, respectively, and forming first and second spacer sleeves to encircle side portions of the first and second dummy features, respectively, removing the first spacer roof and the first dummy feature while protecting the second dummy feature, removing a first end portion and a second end portion of the first spacer sleeve to form spacer fins, and patterning the mask layer using the spacer fins as a first mask element and the second dummy feature as a second mask element.

    摘要翻译： 本公开提供了一种制造半导体器件的方法，该半导体器件包括在衬底上形成掩模层，在掩模层上形成具有第一虚拟特征和第二虚拟特征的虚设层，形成第一和第二间隔物顶部以覆盖顶部 分别形成第一和第二间隔套筒以分别围绕第一和第二虚拟特征的侧面部分，去除第一间隔物顶部和第一虚拟特征，同时保护第二虚拟特征，去除 第一间隔套筒的第一端部和第二端部，以形成间隔件翅片，并且使用间隔件翅片作为第一掩模元件并将第二虚拟特征图案化为掩模层作为第二掩模元件。

    Removal of line end shortening in microlithography and mask set for removal
    29.
    发明授权
    Removal of line end shortening in microlithography and mask set for removal 有权
    在微光刻和掩模组中去除线端缩短以进行去除

    公开(公告)号：US06492073B1

    公开(公告)日：2002-12-10

    申请号：US09839926

    申请日：2001-04-23

    申请人： Burn Jeng Lin ,  Ru-Gun Liu ,  Shih-Ying Chen ,  Shinn-Sheng Yu ,  Hua-Tai Lin ,  Anthony Yen ,  Yao-Ching Ku

    发明人： Burn Jeng Lin ,  Ru-Gun Liu ,  Shih-Ying Chen ,  Shinn-Sheng Yu ,  Hua-Tai Lin ,  Anthony Yen ,  Yao-Ching Ku

    IPC分类号： G03F900

    CPC分类号： G03F1/36 ,  G03F1/70 ,  G03F7/70433 ,  G03F7/70441

    摘要： A mask set of two masks and a method of using these masks in a double exposure to avoid line shortening due to optical proximity effects is described. A pattern having pattern elements comprising a number of line segments, wherein each of the line segments has one or two free ends which are not connected to other mask pattern elements is to be transferred to a layer of resist. A first mask is formed by adding line extensions to each of the free ends of the line segments. A cutting mask is formed comprising rectangles enclosing each of the line extensions wherein one of the sides of said rectangles is coincident with the corresponding free end of said line segment. The first mask has opaque regions corresponding to the extended line segments. The cutting mask has transparent regions corresponding to the cutting pattern. In another embodiment a pattern having pattern openings comprising a number of line segments. In this embodiment the cutting pattern comprises rectangles having the same width as said line segments and add length to the line segments.

    摘要翻译： 描述了两个掩模的掩模组和在双重曝光中使用这些掩模以避免由于光学邻近效应引起的线缩短的方法。 具有包括多个线段的图形元素的图案，其中每个线段具有未连接到其它掩模图案元件的一个或两个自由端将被转移到抗蚀剂层。 通过向线段的每个自由端添加线延伸来形成第一掩模。 形成切割掩模，其包括围绕每个线延伸的矩形，其中所述矩形的一个侧面与所述线段的对应的自由端重合。 第一掩模具有对应于延伸线段的不透明区域。 切割掩模具有对应于切割图案的透明区域。 在另一个实施例中，具有包括多个线段的图案开口的图案。 在该实施例中，切割图案包括具有与所述线段相同宽度的矩形，并且对线段增加长度。

    Method for mask fabrication and repair
    30.
    发明授权
    Method for mask fabrication and repair 有权
    掩模制造和修理方法

    公开(公告)号：US08785084B2

    公开(公告)日：2014-07-22

    申请号：US13602916

    申请日：2012-09-04

    申请人： Yen-Cheng Lu ,  Shinn-Sheng Yu ,  Anthony Yen

    发明人： Yen-Cheng Lu ,  Shinn-Sheng Yu ,  Anthony Yen

    IPC分类号： G03F1/72 ,  G03F1/84 ,  G03F1/24

    CPC分类号： G03F1/24 ,  G03F1/72

    摘要： A method for repairing phase defects for an extreme ultraviolet (EUV) mask is disclosed. The method includes receiving a patterned EUV mask with at least one phase-defect region, determining location and size of the phase-defect region, depositing an absorber material to cover the phase-defect region and removing a portion of the patterned absorption layer near the phase-defect region in the patterned EUV mask to form an absorber-absent region.

    摘要翻译： 公开了用于修复极紫外（EUV）掩模的相缺陷的方法。 该方法包括接收具有至少一个相位缺陷区域的图案化EUV掩模，确定相缺陷区域的位置和尺寸，沉积吸收材料以覆盖相缺陷区域并且去除图案化吸收层附近的一部分 图案化的EUV掩模中的相缺陷区域以形成不存在吸收体的区域。