公开(公告)号：US06159055A

公开(公告)日：2000-12-12

申请号：US126895

申请日：1998-07-31

Applicant: Peter Satitpunwaycha ,  Joseph Stevens

Inventor： Peter Satitpunwaycha ,  Joseph Stevens

IPC: H01R13/22 ,  H01L21/683 ,  H01R13/24 ,  H01R13/33

CPC classification number: H01R13/33 ,  H01L21/6833 ,  H01R13/2421 ,  Y10S439/927

Abstract: An substrate support pedestal having an RF contact assembly that utilizes a canted spring to make electrical connection to the cathode. The canted spring has coils that are tilted in one direction and joined end to end to form a doughnut shape. Such a spring creates multiple parallel self-loading electrical connections via the turns of the spring. The turns act like electrical wires to ensure reliable RF electrical energy transfer. The canted spring contact of the present invention allows for flat contact between the pedestal and the chuck.

Abstract translation: 具有RF接触组件的衬底支撑座，该接触组件利用倾斜弹簧与阴极电连接。 倾斜弹簧具有在一个方向上倾斜并且端对端连接以形成环形形状的线圈。 这种弹簧通过弹簧的转动产生多个并联的自负载电连接。 匝数像电线一样，以确保可靠的射频电能传输。 本发明的倾斜弹簧触点允许基座和卡盘之间的平坦接触。

公开(公告)号：US6139679A

公开(公告)日：2000-10-31

申请号：US173664

申请日：1998-10-15

Applicant: Peter Satitpunwaycha

Inventor： Peter Satitpunwaycha

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/321

Abstract: A coil for a plasma chamber in a semiconductor fabrication process comprises a continuous, one-piece conductive conduit having a first end and a second end positioned on the chamber exterior, a coil portion positioned in the chamber interior and a feedthrough portion positioned in an aperture of the chamber wall. Because the conduit lacks any joints between the feedthrough and the interior coil portions, a potential source of coolant leak is eliminated.

Abstract translation: 在半导体制造工艺中用于等离子体室的线圈包括连续的一件式导电导管，其具有位于室外部的第一端和第二端，位于室内部的线圈部分和位于孔内的馈通部分 的室壁。 因为导管在馈通和内部线圈部分之间缺少任何接头，所以消除了潜在的冷却剂泄漏源。

公开(公告)号：US6045666A

公开(公告)日：2000-04-04

申请号：US977007

申请日：1997-11-24

Applicant: Peter Satitpunwaycha ,  Gongda Yao ,  Kenny King-Tai Ngan ,  Zheng Xu

Inventor： Peter Satitpunwaycha ,  Gongda Yao ,  Kenny King-Tai Ngan ,  Zheng Xu

IPC: C23C14/00 ,  C23C14/04 ,  C23C14/06 ,  C23C14/14 ,  C23C14/32 ,  C23C14/34 ,  C23C14/35 ,  C23C14/56 ,  H01L21/285 ,  H01L21/768 ,  H01L23/485 ,  H01L23/522 ,  H01L23/532

CPC classification number: C23C14/0036 ,  C23C14/046 ,  C23C14/0641 ,  C23C14/14 ,  C23C14/32 ,  C23C14/345 ,  C23C14/35 ,  C23C14/358 ,  C23C14/568 ,  H01J37/321 ,  H01J37/34 ,  H01L21/28518 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76882 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53233 ,  H01L23/53238 ,  H01J2237/32 ,  H01L2924/0002

Abstract: A hole filling process for an integrated circuit in which wiring levels in the integrated circuit are connected by a narrow hole, especially where the underlying level is silicon. First, a physical vapor deposition (PVD) process fills a barrier tri-layer into the hole. The barrier tri-layer includes sequential layers of Ti, TiN, and graded TiN.sub.x, grown under conditions of a high-density plasma. Thereafter, a first aluminum layer is PVD deposited under conditions of a high-density plasma. A filling aluminum layer is then deposited by standard PVD techniques.

Abstract translation: 一种用于集成电路的孔填充过程，其中集成电路中的布线电平通过窄孔连接，特别是在下层是硅的情况下。 首先，物理气相沉积（PVD）工艺将阻挡三层填充到孔中。 阻挡三层包括在高密度等离子体条件下生长的Ti，TiN和分级TiNx的顺序层。 此后，在高密度等离子体的条件下沉积第一铝层。 然后通过标准PVD技术沉积填充铝层。