公开(公告)号：US20230386790A1

公开(公告)日：2023-11-30

申请号：US18248870

申请日：2021-10-12

Applicant: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.

Inventor： Jing WEI ,  Gang WEI ,  Yueping HUA

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J2237/32

Abstract: The present disclosure provides an impedance-matching method applied to a semiconductor process apparatus, an impedance-matching device, and the semiconductor process apparatus. The impedance-matching method includes adjusting a parameter value of an adjustable element of an impedance-matching device to a preset initial value at beginning of a process, when a radio frequency (RF) power supply is powered on, adjusting the parameter value of the adjustable element according to a pre-stored optimal matching path corresponding to the process, and adjusting the parameter value of the adjustable element using an automatic matching algorithm after reaching end time of the preset matching period until impedance-matching is achieved. The optimal matching path includes parameter values of the adjustable element corresponding to different moments in a preset matching period.

公开(公告)号：US20230207248A1

公开(公告)日：2023-06-29

申请号：US17973985

申请日：2022-10-26

Applicant: SEMES CO., LTD.

Inventor： Young Je UM ,  Min Sung HAN ,  Seong Gil LEE ,  Wan Jae PARK ,  Dong Sub OH ,  Yoon Jong JU ,  Myoung Sub NOH

IPC: H01J37/02 ,  H01J37/32

CPC classification number: H01J37/02 ,  H01J37/3244 ,  H01J37/32467 ,  H01J2237/32

Abstract: An exemplary embodiment of the present invention provides a substrate treating apparatus, including: a chamber having an inner space; a shower head for partitioning the inner space into an upper first zone and a lower second zone, and formed with a plurality of through holes; a support unit for supporting a substrate in the second zone; a gas supply unit for supplying gas to the first zone; a plasma source for forming a plasma in the first zone by exciting the gas; and an adsorption plate coupled to the shower head, in which a surface of the adsorption plate is provided with a material that adsorbs radicals contained in the plasma.

公开(公告)号：US20180197796A1

公开(公告)日：2018-07-12

申请号：US15400657

申请日：2017-01-06

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Morgan D. Evans ,  Tristan Ma ,  Kevin Anglin ,  Motoya Okazaki ,  Johannes M. van Meer

IPC: H01L21/66 ,  H01L21/3065 ,  H01J37/32

CPC classification number: H01L22/26 ,  H01J37/32009 ,  H01J2237/32 ,  H01L22/24

Abstract: An apparatus of a wafer processing apparatus includes at least one memory and logic, at least a portion of which is implemented in circuitry of the wafer processing apparatus including at least one processor coupled to the at least one memory. The logic may provide a 3D model of a surface of a wafer, the wafer defining a wafer plane; and modify a surface feature in a Z-direction along the surface of the wafer based on at least one of: an X-critical dimension (CD) extending along an X-direction of the wafer plane, and a Y-CD extending along a Y direction of the wafer plane.

公开(公告)号：US20170076913A1

公开(公告)日：2017-03-16

申请号：US15125431

申请日：2015-03-13

Applicant: NEM Energy B.V.

Inventor： Peter Simon Rop

IPC: H01J37/32 ,  F28F13/18 ,  F24J2/07

CPC classification number: H01J37/32009 ,  C23F4/00 ,  F24S10/80 ,  F24S20/20 ,  F24S70/25 ,  F28F13/185 ,  H01J37/32431 ,  H01J2237/32 ,  Y02E10/41 ,  Y02E10/44

Abstract: A method for treating an outer surface of a heat transfer fluid tube especially for a receiver of a solar thermal power plant, having the steps of providing the heat transfer fluid tube and treating the outer surface with a hydrogen plasma jet so that a porosity in the range of a nano-scale is created in a thin layer of that outer surface.

Abstract translation: 一种用于处理特别用于太阳能发电厂的接收器的传热流体管的外表面的方法，其具有提供传热流体管并用氢等离子体射流处理外表面的步骤，使得在 在该外表面的薄层中产生纳米级的范围。

公开(公告)号：US20060075972A1

公开(公告)日：2006-04-13

申请号：US11258670

申请日：2005-10-25

Applicant: Seiyo Nakashima ,  Michiko Nishiwaki ,  Yukinori Aburatani ,  Satoshi Okada ,  Eisuke Nishitani ,  Kazuhiro Nakagomi ,  Kazuhito Ikeda ,  Kazuhiro Shimeno ,  Gakuji Ohta ,  Katsuhisa Kasanami

Inventor： Seiyo Nakashima ,  Michiko Nishiwaki ,  Yukinori Aburatani ,  Satoshi Okada ,  Eisuke Nishitani ,  Kazuhiro Nakagomi ,  Kazuhito Ikeda ,  Kazuhiro Shimeno ,  Gakuji Ohta ,  Katsuhisa Kasanami

IPC: C23C16/00

CPC classification number: H01L21/68721 ,  C23C16/4584 ,  C23C16/46 ,  H01J2237/2005 ,  H01J2237/32 ,  H01L21/67109 ,  H01L21/68742 ,  H01L21/68785 ,  H01L21/68792

Abstract: A substrate processing apparatus comprises a processing chamber; a susceptor on which a substrate to be processed is to be placed; and a heating unit disposed below the susceptor for heating the substrate to be processed placed on the susceptor. The susceptor and the heating unit are accommodated in the processing chamber, and in a state in which the susceptor and the heating unit are relatively rotated, the substrate to be processed is processed. At least the susceptor is lifted and lowered in the processing chamber, and a substrate to be processed lifting and lowering apparatus for lifting and lowering the substrate to be processed with respect to at least a portion of the susceptor is disposed in the processing chamber.

公开(公告)号：US06629423B1

公开(公告)日：2003-10-07

申请号：US10048068

申请日：2002-01-28

Applicant: Takaaki Hirooka ,  Masao Furuya

Inventor： Takaaki Hirooka ,  Masao Furuya

IPC: F25B4100

CPC classification number: H01L21/67248 ,  H01J2237/2001 ,  H01J2237/32 ,  H01L21/67109

Abstract: A refrigerant circulating passage is provided in a bottom electrode in a processing chamber of an etching system. A refrigerant CW1 is fed from a refrigerant tank to the passage via a refrigerant supply pipe. The refrigerant is cooled in a cooler via a refrigerant pipe and is returned to the refrigerant tank. Temperature sensors provided in the refrigerant supply pipe and refrigerant discharge pipe, detect a feed temperature, an inlet temperature, an outlet temperature and a return temperature, respectively. A target differential value is derived from the heat quantity of a wafer. During processing, the temperature of the refrigerant CW1 is controlled, permitting an actual differential value between the inlet and outlet temperatures follow the target differential value which in turn permits the return temperature to follow a target return temperature which is obtained by subtracting the target differential value from a set temperature of the wafer W.

Abstract translation: 制冷剂循环通道设置在蚀刻系统的处理室中的底部电极中。 制冷剂CW1经由制冷剂供给管从制冷剂罐供给到通路。 制冷剂通过制冷剂管在冷却器中冷却并返回到制冷剂罐。 设置在制冷剂供给管和制冷剂排出管内的温度传感器分别检测进料温度，入口温度，出口温度和回流温度。 从晶片的热量导出目标微分值。 在处理过程中，控制制冷剂CW1的温度，允许入口和出口温度之间的实际差值跟随目标差值，这进而允许返回温度跟随目标返回温度，该目标返回温度通过减去目标差值 从晶片W的设定温度

公开(公告)号：US06562702B2

公开(公告)日：2003-05-13

申请号：US09772863

申请日：2001-01-31

Applicant: Shigeru Yagi

Inventor： Shigeru Yagi

IPC: H01L2136

CPC classification number: C23C16/45523 ,  C23C16/303 ,  C23C16/452 ,  C30B25/02 ,  C30B25/18 ,  C30B29/38 ,  C30B29/403 ,  C30B29/406 ,  H01J2237/32 ,  H01L33/007 ,  H01L33/0075 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a method and apparatus for the production of a semiconductor device, the method and the apparatus producing a high quality and highly functional semiconductor device efficiently at low temperatures in a short time and also a high quality and highly functional semiconductor device produced by the method and apparatus. The semiconductor device is produced by forming a film of a nitride compound on a substrate having heat resistance at 600° C. or less, wherein the nitride compound includes one or more elements selected from group IIIA elements of the periodic table and a nitrogen atom and produces photoluminescence at the band edges at room temperature. The method for producing a semiconductor device comprises introducing an organic metal compound containing one or more elements selected from group IIIA elements of the periodic table intermittently in an activated environment, while continuously activating a nitrogen compound, to form a film of a nitride compound containing nitrogen and the group IIIA elements on a substrate.

公开(公告)号：US06362494B1

公开(公告)日：2002-03-26

申请号：US09294403

申请日：1999-04-20

Applicant: Shigeru Yagi

Inventor： Shigeru Yagi

IPC: H01L3300

CPC classification number: C23C16/45523 ,  C23C16/303 ,  C23C16/452 ,  C30B25/02 ,  C30B25/18 ,  C30B29/38 ,  C30B29/403 ,  C30B29/406 ,  H01J2237/32 ,  H01L33/007 ,  H01L33/0075 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a method and apparatus for the production of a semiconductor device, the method and the apparatus producing a high quality and highly functional semiconductor device efficiently at low temperatures in a short time and also a high quality and highly functional semiconductor device produced by the method and apparatus. The semiconductor device is produced by forming a film of a nitride compound on a substrate having heat resistance at 600° C. or less, wherein the nitride compound includes one or more elements selected from group IIIA elements of the periodic table and a nitrogen atom and produces photoluminescence at the band edges at room temperature. The method for producing a semiconductor device comprises introducing an organic metal compound containing one or more elements selected from group IIIA elements of the periodic table intermittently in an activated environment, while continuously activating a nitrogen compound, to form a film of a nitride compound containing nitrogen and the group IIIA elements on a substrate.

Abstract translation: 本发明提供一种制造半导体器件的方法和装置，该方法和装置在短时间内在低温下有效地生产高质量和高功能的半导体器件，并且还提供了一种通过该方法制造的高品质和高功能的半导体器件 和装置。 半导体器件通过在600℃以下的耐热性的基板上形成氮化物的膜而制造，其中，所述氮化物包含选自元素周期表的IIIA族元素和氮原子的一种以上的元素， 在室温下在带边缘产生光致发光。 制造半导体装置的方法包括在活化环境中间歇地引入含有选自元素周期表的IIIA族元素的一种或多种元素的有机金属化合物，同时连续活化氮化合物，形成含有氮的氮化物的膜 和基团上的IIIA族元素。

公开(公告)号：US5972235A

公开(公告)日：1999-10-26

申请号：US808364

申请日：1997-02-28

Applicant: Kristin Brigham ,  Chungdee Pong

Inventor： Kristin Brigham ,  Chungdee Pong

IPC: H01L21/302 ,  H01J9/02 ,  H01L21/311 ,  H01L21/3213 ,  B44C1/22

CPC classification number: H01J9/025 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32139 ,  H01J2237/32 ,  H01J2237/334

Abstract: Provided is a method of etching an etch layer using a polycarbonate layer as a mask. The method includes placing an etch structure in a reaction chamber, the etch structure including an etch layer underlying a polycarbonate layer, the polycarbonate layer having apertures. The etch layer is then etched using a low pressure-high density plasma generate at a pressure in the range of approximately 1 to 30 millitorr where the ionized particle concentration is at least 10.sup.11 ions/cm.sup.3 and where the ionized particle concentration is substantially equal throughout the volume of the reaction chamber. To increase the etch rate, the etch structure can be heated or biased. To decrease the etch rate, an inert gas can be added to the process gas mixture used to form the plasma.

Abstract translation: 提供了使用聚碳酸酯层作为掩模蚀刻蚀刻层的方法。 该方法包括在反应室中放置蚀刻结构，该蚀刻结构包括聚碳酸酯层下面的蚀刻层，聚碳酸酯层具有孔。 然后使用在约1至30毫托的范围内的压力下产生的低压 - 高密度等离子体蚀刻蚀刻层，其中电离粒子浓度为至少1011个离子/ cm 3，并且其中电离粒子浓度在整个 反应室的体积。 为了提高蚀刻速率，可以加热或偏压蚀刻结构。 为了降低蚀刻速率，可以向用于形成等离子体的工艺气体混合物中加入惰性气体。

公开(公告)号：US12100609B2

公开(公告)日：2024-09-24

申请号：US16848553

申请日：2020-04-14

Applicant: Applied Materials, Inc.

Inventor： Sarah Michelle Bobek ,  Venkata Sharat Chandra Parimi ,  Prashant Kumar Kulshreshtha ,  Kwangduk Douglas Lee

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3213 ,  C23C16/02 ,  C30B33/12 ,  H01L21/3065

CPC classification number: H01L21/6831 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32449 ,  H01J37/32743 ,  H01L21/02274 ,  H01L21/02315 ,  H01L21/0234 ,  H01L21/32136 ,  H01L21/6833 ,  C23C16/0245 ,  C30B33/12 ,  H01J2237/036 ,  H01J2237/32 ,  H01L21/02252 ,  H01L21/3065

Abstract: One or more embodiments described herein generally relate to methods for chucking and de-chucking a substrate to/from an electrostatic chuck used in a semiconductor processing system. Generally, in embodiments described herein, the method includes: (1) applying a first voltage from a direct current (DC) power source to an electrode disposed within a pedestal; (2) introducing process gases into a process chamber; (3) applying power from a radio frequency (RF) power source to a showerhead; (4) performing a process on the substrate; (5) stopping application of the RF power; (6) removing the process gases from the process chamber; and (7) stopping applying the DC power.