公开(公告)号：US20220406354A1

公开(公告)日：2022-12-22

申请号：US17852266

申请日：2022-06-28

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  John Eric Linstadt ,  Kenneth L. Wright

IPC: G11C11/00 ,  G06F12/0804 ,  G06F12/084 ,  G06F12/0895 ,  G11C5/04 ,  G11C14/00 ,  G06F12/02

Abstract: A memory module includes cache of relatively fast and durable dynamic, random-access memory (DRAM) in service of a larger amount of relatively slow and wear-sensitive nonvolatile memory. Local controller manages communication between the DRAM cache and nonvolatile memory to accommodate disparate access granularities, reduce the requisite number of memory transactions, and minimize the flow of data external to nonvolatile memory components.

公开(公告)号：US11456025B2

公开(公告)日：2022-09-27

申请号：US17089899

申请日：2020-11-05

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  John Eric Linstadt ,  Kenneth L. Wright

IPC: G06F12/08 ,  G11C11/00 ,  G06F12/0804 ,  G06F12/084 ,  G06F12/0895 ,  G11C5/04 ,  G11C14/00 ,  G06F12/02 ,  G11C11/4076 ,  G11C7/22

Abstract: A memory module includes cache of relatively fast and durable dynamic, random-access memory (DRAM) in service of a larger amount of relatively slow and wear-sensitive nonvolatile memory. Local controller manages communication between the DRAM cache and nonvolatile memory to accommodate disparate access granularities, reduce the requisite number of memory transactions, and minimize the flow of data external to nonvolatile memory components.

公开(公告)号：US20220300439A1

公开(公告)日：2022-09-22

申请号：US17715379

申请日：2022-04-07

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Kenneth L. Wright

IPC: G06F13/16 ,  G06F11/07 ,  G06F13/40 ,  G06F11/20 ,  G06F11/16 ,  G06F11/10

Abstract: Memory controllers, devices, modules, systems and associated methods are disclosed. In one embodiment, an integrated circuit (IC) memory component is disclosed that includes a memory core, a primary interface, and a secondary interface. The primary interface includes data input/output (I/O) circuitry and control/address (C/A) input circuitry, and accesses the memory core during a normal mode of operation. The secondary interface accesses the memory core during a fault mode of operation.

公开(公告)号：US20220005519A1

公开(公告)日：2022-01-06

申请号：US17376032

申请日：2021-07-14

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  John Eric Linstadt ,  Brent Steven Haukness ,  Kenneth L. Wright ,  Thomas Vogelsang

IPC: G11C11/403 ,  G11C11/4097 ,  G11C11/4096 ,  G11C8/08 ,  G11C7/10 ,  G11C7/18 ,  G11C5/02 ,  G11C11/408 ,  G06F12/06 ,  G11C11/406 ,  G11C11/409

Abstract: A memory component includes a first memory bank. The first memory bank has a plurality of sub-arrays having sub-rows of memory elements. The memory component includes a write driver, coupled to the first memory bank, to perform a write operation of an entire sub-row of a sub-array. To perform the write operation, the write driver is to load a burst of write data to the memory bank. The memory bank may then activate a plurality of sense amplifiers associated with a plurality of memory elements of the entire sub-row to load the burst of write data to the plurality of sense amplifiers.

公开(公告)号：US11210242B2

公开(公告)日：2021-12-28

申请号：US16888551

申请日：2020-05-29

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Kenneth L. Wright ,  John Eric Linstadt ,  Craig Hampel

IPC: G06F13/16 ,  G06F12/0868 ,  G06F12/0888 ,  G11C7/10 ,  G06F3/06 ,  G06F11/10 ,  G06F12/0895 ,  G06F13/28 ,  G11C29/52

Abstract: Memory controllers, devices, modules, systems and associated methods are disclosed. In one embodiment, a memory module includes a pin interface for coupling to a bus. The bus has a first width. The module includes at least one storage class memory (SCM) component and at least one DRAM component. The memory module operates in a first mode that utilizes all of the first width, and in a second mode that utilizes less than all of the first width.

公开(公告)号：US11061773B2

公开(公告)日：2021-07-13

申请号：US16290759

申请日：2019-03-01

Applicant: Rambus Inc.

Inventor： Kenneth L. Wright ,  Frederick A. Ware

IPC: G06F11/00 ,  G06F11/14 ,  H01L23/00 ,  G06F3/06 ,  G06F13/16 ,  G06F13/40 ,  H01L25/065 ,  H01L25/10

Abstract: A memory system includes dynamic random-access memory (DRAM) components that include interconnected and redundant component data interfaces. The redundant interfaces facilitate memory interconnect topologies that accommodate considerably more DRAM components per memory channel than do traditional memory systems, and thus offer considerably more memory capacity per channel, without concomitant reductions in signaling speeds. The memory components can be configured to route data around defective data connections to maintain full capacity and continue to support memory transactions.

公开(公告)号：US20210134344A1

公开(公告)日：2021-05-06

申请号：US17099413

申请日：2020-11-16

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  John Eric Linstadt ,  Brent Steven Haukness ,  Kenneth L. Wright ,  Thomas Vogelsang

IPC: G11C11/403 ,  G11C11/4097 ,  G11C11/4096 ,  G11C8/08 ,  G11C7/10 ,  G11C7/18 ,  G11C5/02 ,  G11C11/408 ,  G06F12/06 ,  G11C11/406 ,  G11C11/409

Abstract: A memory component includes a first memory bank. The first memory bank has a plurality of sub-arrays having sub-rows of memory elements. The memory component includes a write driver, coupled to the first memory bank, to perform a write operation of an entire sub-row of a sub-array. To perform the write operation, the write driver is to load a burst of write data to the memory bank. The memory bank may then activate a plurality of sense amplifiers associated with a plurality of memory elements of the entire sub-row to load the burst of write data to the plurality of sense amplifiers.

公开(公告)号：US09697884B2

公开(公告)日：2017-07-04

申请号：US15262741

申请日：2016-09-12

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  John Eric Linstadt ,  Kenneth L. Wright

IPC: G11C7/10 ,  G11C11/4093 ,  G11C11/4096 ,  G11C29/52

CPC classification number: G11C11/4093 ,  G06F11/1048 ,  G11C7/02 ,  G11C11/4096 ,  G11C29/52 ,  G11C2029/0411

Abstract: Described are memory modules that support different error detection and correction (EDC) schemes in both single- and multiple-module memory systems. The memory modules are width configurable, and support the different EDC schemes for relatively wide and narrow module data widths. Data buffers on the modules support the half-width and full-width modes, and also support time-division-multiplexing to access additional memory components on each module in support of enhanced EDC.

公开(公告)号：US20170103800A1

公开(公告)日：2017-04-13

申请号：US15262741

申请日：2016-09-12

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  John Eric Linstadt ,  Kenneth L. Wright

IPC: G11C11/4093 ,  G11C29/52 ,  G11C11/4096

CPC classification number: G11C11/4093 ,  G06F11/1048 ,  G11C7/02 ,  G11C11/4096 ,  G11C29/52 ,  G11C2029/0411

Abstract: Described are memory modules that support different error detection and correction (EDC) schemes in both single- and multiple-module memory systems. The memory modules are width configurable, and support the different EDC schemes for relatively wide and narrow module data widths. Data buffers on the modules support the half-width and full-width modes, and also support time-division-multiplexing to access additional memory components on each module in support of enhanced EDC.

公开(公告)号：US20230377632A1

公开(公告)日：2023-11-23

申请号：US18203511

申请日：2023-05-30

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  John Eric Linstadt ,  Kenneth L. Wright

IPC: G11C11/4093 ,  G11C11/4096 ,  G06F11/10 ,  G11C7/02 ,  G11C29/52

CPC classification number: G11C11/4093 ,  G11C11/4096 ,  G06F11/1048 ,  G11C7/02 ,  G11C29/52 ,  G11C2029/0411

Abstract: Described are memory modules that support different error detection and correction (EDC) schemes in both single- and multiple-module memory systems. The memory modules are width configurable and support the different EDC schemes for relatively wide and narrow module data widths. Data buffers on the modules support the half-width and full-width modes, and also support time-division-multiplexing to access additional memory components on each module in support of enhanced EDC.