摘要:
A textile pressure sensor for the capacitive measuring of a pressure distribution of objects of any shape, in particular body parts, on a surface is proposed, having a first structure (30a) which is conductive at least in regions and a second structure (30b) which is conductive at least in regions, wherein the first and the second structure which are conductive at least in regions are separated from each other by a dielectric intermediate element (48), and wherein conductive regions of the first structure (30a) form capacitors with opposite conductive regions of the second structure (30b). The textile pressure sensor is distinguished in that the first and/or the second structure (30a, 30b) which is conductive at least in regions is designed as a knitted fabric.
摘要:
The current invention relates, inter alia, to charge pulse amplitude and time detecting circuits, offering very low amplitude and temporal noise, and overcoming noise performance limits in charge pulse detection circuits according to prior art. Embodiments of the present invention may include a sensing device delivering charge pulses onto a sense node, an active buffer buffering the voltage on the sense node with a low impedance, a recharge device removing signal charge from the sense node, a noise filter connected to the output of the active buffer transmitting signal voltage pulses while attenuating noise from the recharge device. Additional and alternative embodiments are specified and claimed.
摘要:
The present invention discloses a solid-state electric charge sensor (200, 600) comprising at least one signal-readout circuit (205, 605) that comprises a current source (140, 640) and a column line (120, 620). The sensor also comprises at least one charge detector circuit (210, 610) that is operatively coupled with the at least one signal-readout circuit (205, 605). The at least one signal-readout circuit (205, 605) is characterized by further comprising at least one open-loop amplifier (250, 650), the input of which is operatively connectable with the at least one column signal line (220, 620) and with the at least one current source (240, 640); at least one feedback line (230, 630) that is operatively connectable with the output (254, 654) of the at least one open-loop amplifier (250, 650); and operative to selectively form a negative feedback loop; and wherein the open-loop amplifier (250, 650) has an inverting voltage gain.
摘要:
The pixel for use in an image sensor comprises a low-doped semiconductor substrate (A). On the substrate (A), an arrangement of a plurality of floating areas, e.g., floating gates (FG2-FG6), is provided. Neighboring floating gates are electrically isolated from each other yet capacitively coupled to each other. By applying a voltage (V2−V1) to two contact areas (FG1, FG7), a lateral steplike electric field is generated. Photogenerated charge carriers move along the electric-field lines to the point of highest potential energy, where a floating diffusion (D) accumulate the photocharges. The charges accumulated in the various pixels are sequentially read out with a suitable circuit known from image-sensor literature, such as a source follower or a charge amplifier with row and column select mechanisms. The pixel of offers at the same time a large sensing area, a high photocharge-detection sensitivity and a high response speed, without any static current consumption.
摘要:
The pixel for use in an image sensor comprises a low-doped semiconductor substrate (A). On the substrate (A), an arrangement of a plurality of floating areas e.g., floating gates (FG2-FG6), is provided. Neighboring floating gates are electrically isolated from each other yet capacitively coupled to each other. By applying a voltage (V2-V1) to two contact areas (FG1, FG7), a lateral steplike electric field is generated. Photogenerated charge carriers move along the electric-field lines to the point of highest potential energy, where a floating diffusion (D) accumulate the photocharges. The charges accumulated in the various pixels are sequentially read out with a suitable circuit known from image-sensor literature, such as a source follower or a charge amplifier with row and column select mechanisms. The pixel of offers at the same time a large sensing area, a high photocharge-detection sensitivity and a high response speed without any static current consumption.
摘要:
An optically reflective or translucent object (14) can be microscopically imaged in all three dimensions and in true color for observation by a human observer. An interferometric optical setup is employed, using the low temporal coherence of a tunable broad-band light source (10, 20) to resolve the axial dimension, a single opto-mechanical or electronic scanning mechanism for accessing different object depths, and a two-dimensional photo sensor device (15, 34) capable of demodulating the temporally or spatially modulated scanning signals to reconstruct the object's full volume. Three volume scans are carried out sequentially, and the tunable broad-band source (10, 20) is operated in such a way that its spectral distribution for each of the volume scans results in an effective system sensitivity corresponding to one of the three CIE (Commission Internationale d'Éclairage) tristimulus curves, or a linear combination thereof. The linear combination of the three volume images forms the full, true-color volume image for human observers. By using reference objects (43) in the imaged volume, the three-dimensional images can be corrected for spatially- and wavelength-dependent dispersion and absorption.
摘要:
A two-dimensional, temporally modulated electromagnetic wavefield, preferably in the ultraviolet, visible or infrared spectral range, can be locally detected and demodulated with one or more sensing elements. Each sensing element consists of a resistive, transparent electrode (E) on top of an insulated layer (O) that is produced over a semiconducting substrate whose surface is electrically kept in depletion. The electrode (E) is connected with two or more contacts (C1; C2) to a number of clock voltages that are operated synchronously with the frequency of the modulated wavefield. In the electrode and in the semiconducting substrate lateral electric fields are created that separate and transport photogenerated charge pairs in the semiconductor to respective diffusions (D1; D2) close to the contacts (C1; C2). By repetitively storing and accumulating photocharges in the diffusions (D1; D2), electrical signals are generated that are subsequently read out for the determination of local phase shift, amplitude and offset of the modulated wavefield.
摘要:
An optically reflective or translucent object (14) can be microscopically imaged in all three dimensions and in true color for observation by a human observer. An interferometric optical setup is employed, using the low temporal coherence of a tunable broad-band light source (10, 20) to resolve the axial dimension, a single opto-mechanical or electronic scanning mechanism for accessing different object depths, and a two-dimensional photo sensor device (15, 34) capable of demodulating the temporally or spatially modulated scanning signals to reconstruct the object's full volume. Three volume scans are carried out sequentially, and the tunable broad-band source (10, 20) is operated in such a way that its spectral distribution for each of the volume scans results in an effective system sensitivity corresponding to one of the three CIE (Commission Internationale d'Éclairage) tristimulus curves, or a linear combination thereof. The linear combination of the three volume images forms the full, true-color volume image for human observers. By using reference objects (43) in the imaged volume, the three-dimensional images can be corrected for spatially- and wavelength-dependent dispersion and absorption.
摘要:
An imaging optical coherence tomography (OCT) apparatus with high transverse and high axial resolution comprises an interferometer of the Michelson, Mach-Zehnder or Kosters type. Light returning in the reference beam path (27) and the object beam path (26) interferes and is detected by an image sensor (28, 45) in the detection beam path (25). A single electromechanical linear scanner displaces the plane reference mirror (34, 51), the object imaging lens (33, 50), and the reference imaging lens (35, 52) along the optical axis. By providing identical lenses in the reference beam path (27) and in the object beam path (26), the geometrical displacement of the measurement focus in the object beam path (26) is equal to the change in optical length in the reference beam path (27), thus allowing dynamic coherent focus over the full scanning distance. All optical elements that must be replaced to obtain a different optical magnification can be arranged in an exchangeable cartridge (32, 49). The OCT image sensor (45) with its limited lateral resolution may be complemented by an additional high-resolution camera (57), which is observing the object through a beam splitter or a dichroic mirror in the detection beam path.
摘要:
A solid-state image sensor (1) with very high sensitivity approaching the single-photon limit is realized with three modular building blocks: (a) a pixel (2.11, 2.12, . . . ) with a photo-site, intermediate photo-charge storage capability as used for correlated double sampling, and an electronic circuit for signal buffering or amplification, (b) a column or row signal line (3.1) to which a plurality of such pixels (2.11, 2.21, . . . ) is connected using transistor switches, incorporating a low-pass filter (30.1), and (c) a readout circuit (4) to which the row signal lines (3.1, 3.2, . . . ) are connected, consisting of a plurality of analog amplifiers (41.1, 41.2, . . . ) with an analog multiplexer (42). Photo-generated signals are read out and the reset level is subtracted either in the analog or in the digital domain, to implement a correlated-double-sampling method.