公开(公告)号：US07502206B2

公开(公告)日：2009-03-10

申请号：US11492375

申请日：2006-07-24

申请人： Bruce Alvin Gurney ,  Stefan Maat ,  Ernesto E. Marinero ,  Bruce Alexander Wilson

发明人： Bruce Alvin Gurney ,  Stefan Maat ,  Ernesto E. Marinero ,  Bruce Alexander Wilson

IPC分类号： G11B5/33

CPC分类号： G11B5/3948 ,  G11C11/14

摘要： An extraordinary magnetoresistive device EMR sensor that is capable of reading two separate tracks of data simultaneously. The EMR sensor has a semiconductor structure with an electrically conductive shunt structure at one side. The other side of the semiconductor structure is connected with a pair of current leads. Each of the current leads is disposed between a pair of voltage leads. Each pair of voltage leads is capable of independently reading a magnetic signal by measuring the voltage potential change across the pair of voltage leads. The EMR structure minimizes the number of leads needed to read two magnetic signals by using a single pair of current leads to read two tracks of data.

摘要翻译： 一个非凡的磁阻器件EMR传感器，能够同时读取两个独立的数据轨迹。 EMR传感器具有在一侧具有导电分流结构的半导体结构。 半导体结构的另一侧与一对电流引线连接。 每个电流引线设置在一对电压引线之间。 每对电压引线可以通过测量一对电压引线上的电压电位变化来独立读取磁信号。 EMR结构通过使用单对电流引线读取两个数据轨迹来最小化读取两个磁信号所需的引线数量。

公开(公告)号：US08189302B2

公开(公告)日：2012-05-29

申请号：US12880071

申请日：2010-09-11

申请人： Bruce Alvin Gurney ,  Ernesto E. Marinero ,  Simone Pisana

发明人： Bruce Alvin Gurney ,  Ernesto E. Marinero ,  Simone Pisana

IPC分类号： G11B5/33

CPC分类号： G11B5/3903 ,  G01R33/095 ,  G11B5/3993 ,  H01F10/123

摘要： A graphene magnetic field sensor has a ferromagnetic biasing layer located beneath and in close proximity to the graphene sense layer. The sensor includes a suitable substrate, the ferromagnetic biasing layer, the graphene sense layer, and an electrically insulating underlayer between the ferromagnetic biasing layer and the graphene sense layer. The underlayer may be a hexagonal boron-nitride (h-BN) layer, and the sensor may include a seed layer to facilitate the growth of the h-BN underlayer. The ferromagnetic biasing layer has perpendicular magnetic anisotropy with its magnetic moment oriented substantially perpendicular to the plane of the layer. The graphene magnetic field sensor based on the extraordinary magnetoresistance (EMR) effect may function as the magnetoresistive read head in a magnetic recording disk drive.

摘要翻译： 石墨烯磁场传感器具有位于石墨烯感测层下方并且非常接近石墨烯感测层的铁磁偏置层。 传感器包括合适的衬底，铁磁偏置层，石墨烯感测层以及铁磁偏置层和石墨烯感应层之间的电绝缘底层。 底层可以是六方氮化硼（h-BN）层，并且传感器可以包括种子层以促进h-BN底层的生长。 铁磁偏置层具有垂直的磁各向异性，其磁矩基本上垂直于层的平面定向。 基于异常磁阻（EMR）效应的石墨烯磁场传感器可以用作磁记录盘驱动器中的磁阻读取头。

公开(公告)号：US08159791B2

公开(公告)日：2012-04-17

申请号：US12027213

申请日：2008-02-06

申请人： Bruce Alvin Gurney ,  Ernesto E. Marinero

发明人： Bruce Alvin Gurney ,  Ernesto E. Marinero

IPC分类号： G11B5/39

CPC分类号： G11B5/374

摘要： A Lorentz Magnetoresistive sensor having an ultrathin trapping layer disposed between a quantum well structure and a surface of the sensor. The trapping layer prevents charge carriers from the surface of the sensor from affecting the quantum well structure. This allows the quantum well structure to be formed much closer to the surface of the sensor, and therefore, much closer to the magnetic field source, greatly improving sensor performance. A Lorentz Magnetoresistive sensor having a top gate electrode to hinder surface charge carriers diffusing into the quantum well, said top gate electrode being either a highly conductive ultrathin patterned metal layer or a patterned monoatomic layer of graphene.

摘要翻译： 洛伦兹磁阻传感器，其具有设置在量子阱结构和传感器表面之间的超薄捕获层。 捕获层防止传感器表面的电荷载体影响量子阱结构。 这允许量子阱结构形成得更接近传感器的表面，因此更接近于磁场源，大大提高了传感器的性能。 一种洛伦兹磁阻传感器，其具有顶部栅极以阻止表面电荷载流子扩散到量子阱中，所述顶部栅电极是高度导电的超薄图案化的金属层或图案化的石墨烯单原子层。

公开(公告)号：US08125742B2

公开(公告)日：2012-02-28

申请号：US11857393

申请日：2007-09-18

申请人： Bruce Alvin Gurney ,  Ernesto E. Marinero ,  Andrew Stuart Troup ,  David Arfon Williams ,  Joerg Wunderlich

发明人： Bruce Alvin Gurney ,  Ernesto E. Marinero ,  Andrew Stuart Troup ,  David Arfon Williams ,  Joerg Wunderlich

IPC分类号： G11B5/37

CPC分类号： H01L43/08 ,  G01R33/07 ,  G01R33/095 ,  G11B5/3993 ,  H01L43/06 ,  H01L43/12

摘要： A Lorentz Magnetoresistive sensor having an extremely small lead width and lead spacing is disclosed. The sensor can be constructed by a novel fabrication method that allows the leads to be deposited in such a manner that lead width and spacing between the leads is determined by the as deposited thicknesses of the lead layers and electrically insulating spacer layers between the leads rather than by photolithography. Because the lead thicknesses and lead spacings are not defined photolithograhically, the lead thickness and lead spacing are not limited by photolithographic resolution limits.

摘要翻译： 公开了一种具有极小引线宽度和引线间距的洛伦兹磁阻传感器。 传感器可以通过新颖的制造方法来构造，其允许以这样的方式沉积引线，使得引线之间的引线宽度和间隔由引线层的沉积厚度和引线之间的电绝缘间隔层确定，而不是 通过光刻。 由于引线厚度和引线间距未以光刻方式定义，所以引线厚度和引线间距不受光刻分辨率限制。

公开(公告)号：US20100165518A1

公开(公告)日：2010-07-01

申请号：US12345795

申请日：2008-12-30

申请人： Thomas Dudley Boone, JR. ,  Bruce Alvin Gurney ,  Ernesto E. Marinero

发明人： Thomas Dudley Boone, JR. ,  Bruce Alvin Gurney ,  Ernesto E. Marinero

IPC分类号： G11B5/33

CPC分类号： G01R33/028 ,  G01R33/091 ,  G01R33/095 ,  G11B5/3993 ,  G11B2005/0002 ,  H01L43/08

摘要： A Lorentz magnetoresistive sensor that employs a gating voltage to control the momentum of charge carriers in a quantum well structure. A gate electrode can be formed at the top of the sensor structure to apply a gate voltage. The application of the gate voltage reduces the momentum of the charge carriers, which makes their movement more easily altered by the presence of a magnetic field, thereby increasing the sensitivity of the sensor.

摘要翻译： 洛伦兹磁阻传感器采用门控电压来控制量子阱结构中电荷载流子的动量。 栅电极可以形成在传感器结构的顶部以施加栅极电压。 施加栅极电压降低了电荷载流子的动量，这使得它们的移动更容易被存在磁场所改变，从而增加了传感器的灵敏度。

公开(公告)号：US20090080118A1

公开(公告)日：2009-03-26

申请号：US11858816

申请日：2007-09-20

申请人： Bruce Alvin Gurney ,  Ernesto E. Marinero ,  Andrew Stuart Troup ,  David Arfon Williams ,  Joerg Wunderlich

发明人： Bruce Alvin Gurney ,  Ernesto E. Marinero ,  Andrew Stuart Troup ,  David Arfon Williams ,  Joerg Wunderlich

IPC分类号： G11B5/33

CPC分类号： G11B5/3993 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/095 ,  G11B5/3903 ,  G11B2005/0002

摘要： A Lorentz magnetoresistive sensor having integrated signal amplification. The sensor is constructed upon a substrate such as a semiconductor material, and an amplification circuit such as transistor is constructed directly into the substrate on which the magnetoresistive device is constructed. This integrated signal amplification greatly enhances sensor performance by eliminating a great deal of signal noise that would otherwise be added to the read signal.

摘要翻译： 具有集成信号放大的洛伦兹磁阻传感器。 传感器构造在诸如半导体材料的衬底上，并且诸如晶体管的放大电路直接构成到其上构成磁阻器件的衬底中。 该集成信号放大通过消除否则将被添加到读取信号的大量信号噪声来大大提高传感器性能。

公开(公告)号：US07502193B2

公开(公告)日：2009-03-10

申请号：US11508538

申请日：2006-08-22

申请人： Thomas Robert Albrecht ,  Bruce Alvin Gurney ,  Ernesto E. Marinero

发明人： Thomas Robert Albrecht ,  Bruce Alvin Gurney ,  Ernesto E. Marinero

IPC分类号： G11B21/02

CPC分类号： G11B5/59655 ,  G11B5/3948 ,  G11B5/397 ,  G11B5/4886

摘要： A system method and apparatus for determining a position error signal (PES) for servo tracking in a data recording system using a data track. The PES is determined using a sensor array that includes a plurality of sensors offset from one another by certain predetermined distances in a direction perpendicular to the track direction. Correlation functions can be determined for pairs of sensors in the sensor array based on the signals read by the sensors. The results of these correlation functions can then be used to determine a PES by using a look up table or computational processor.

摘要翻译： 一种用于在使用数据轨道的数据记录系统中确定用于伺服跟踪的位置误差信号（PES）的系统方法和装置。 使用包括多个传感器的传感器阵列来确定PES，所述传感器阵列在垂直于轨道方向的方向上彼此偏移了特定的预定距离。 可以基于传感器读取的信号，确定传感器阵列中的传感器对的相关函数。 这些相关函数的结果然后可以用于通过使用查询表或计算处理器来确定PES。

公开(公告)号：US20080278860A1

公开(公告)日：2008-11-13

申请号：US11747683

申请日：2007-05-11

申请人： Thomas Dudley Boone, JR. ,  Liesl Folks ,  Bruce Alvin Gurney ,  Jordan Asher Katine ,  Ernesto E. Marinero ,  Neil Smith

发明人： Thomas Dudley Boone, JR. ,  Liesl Folks ,  Bruce Alvin Gurney ,  Jordan Asher Katine ,  Ernesto E. Marinero ,  Neil Smith

IPC分类号： G11B5/127

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/095 ,  G11B5/398 ,  G11B5/3993 ,  G11C11/14 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： An extraordinary magnetoresistive sensor (EMR sensor) having reduced size and increased resolution is described. The sensor includes a plurality of electrically conductive leads contacting a magnetically active layer and also includes an electrically conductive shunt structure. The electrically conductive leads of the sensor and the shunt structure can be formed in a common photolithographic masking and etching process so that they are self aligned with one another. This avoids the need to align multiple photolithographic processing steps, thereby allowing greatly increased resolution and reduced lead spacing. The EMR sensor can be formed with a magnetically active layer that can be close to or at the air bearing surface (ABS) for improved magnetic spacing with an adjacent magnetic medium of a data recording system.

摘要翻译： 描述了具有减小的尺寸和增加的分辨率的非凡的磁阻传感器（EMR传感器）。 传感器包括接触磁性有源层的多个导电引线，并且还包括导电分路结构。 传感器和分路结构的导电引线可以以普通的光刻掩模和蚀刻工艺形成，使得它们彼此自对准。 这避免了需要对准多个光刻处理步骤，从而允许大大提高分辨率和减小引线间距。 EMR传感器可以形成有可靠近或位于空气轴承表面（ABS）的磁性活性层，以改善与数据记录系统的相邻磁性介质的磁间距。

公开(公告)号：US08634168B2

公开(公告)日：2014-01-21

申请号：US13433192

申请日：2012-03-28

申请人： Thomas Robert Albrecht ,  Robert E. Fontana, Jr. ,  Bruce Alvin Gurney ,  Timothy Clark Reiley ,  Xiao Z. Wu

发明人： Thomas Robert Albrecht ,  Robert E. Fontana, Jr. ,  Bruce Alvin Gurney ,  Timothy Clark Reiley ,  Xiao Z. Wu

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/40

摘要： A structure for preventing Electrostatic Discharge (ESD) damage to a magnetoresistive sensor during manufacture. The structure includes a switching element that can be switched off during testing of the sensor and then switched back on to provide ESD shunting to the sensor. The switch can be a thermally activated mechanical relay built onto the slider. The switch could also be a programmable resistor that includes a solid electrolyte sandwiched between first and second electrodes. One of the electrodes functions as an anode. When voltage is applied in a first direction an ion bridge forms across through the electrolyte across electrodes making the resistor conductive. When a voltage is applied in a second direction, the ion bridge recedes and the programmable resistor becomes essentially non-conductive.

摘要翻译： 用于在制造期间防止静电放电（ESD）损坏磁阻传感器的结构。 该结构包括开关元件，该开关元件可以在测试传感器期间关闭，然后重新接通以向传感器提供ESD分流。 开关可以是内置在滑块上的热激活机械继电器。 开关也可以是可编程电阻器，其包括夹在第一和第二电极之间的固体电解质。 电极之一用作阳极。 当沿第一方向施加电压时，离子桥跨越电解质跨过电极跨过电极，使电阻器导电。 当沿第二个方向施加电压时，离子桥退出，可编程电阻基本上不导电。

公开(公告)号：US08035927B2

公开(公告)日：2011-10-11

申请号：US12021085

申请日：2008-01-28

申请人： Thomas Dudley Boone, Jr. ,  Liesl Folks ,  Robert E. Fontana, Jr. ,  Bruce Alvin Gurney ,  Jordan Asher Katine ,  Sergio Nicoletti

发明人： Thomas Dudley Boone, Jr. ,  Liesl Folks ,  Robert E. Fontana, Jr. ,  Bruce Alvin Gurney ,  Jordan Asher Katine ,  Sergio Nicoletti

IPC分类号： G11B5/39

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/095 ,  G11B5/3993 ,  H01L43/08 ,  H01L43/12

摘要： An extraordinary magnetoresistive sensor (EMR sensor) having a lead structure that is self aligned with a magnetic shunt structure. To form an EMR sensor according to an embodiment of the invention, a plurality of layers are deposited to form quantum well structure such as a two dimensional electron gas structure (2DEG). A first mask structure is deposited having two openings, and a material removal process is performed to remove portions of the sensor material from areas exposed by the openings. The distance between the two openings in the first mask defines a distance between a set of leads and the shunt structure. A non-magnetic metal is then deposited. A second mask structure is then formed to define shape of the leads.

摘要翻译： 具有与磁分路结构自对准的引线结构的非凡的磁阻传感器（EMR传感器）。 为了形成根据本发明的实施例的EMR传感器，沉积多个层以形成诸如二维电子气体结构（2DEG）的量子阱结构。 沉积具有两个开口的第一掩模结构，并且执行材料去除处理以将传感器材料的部分从由开口暴露的区域中去除。 第一掩模中的两个开口之间的距离限定一组引线和分流结构之间的距离。 然后沉积非磁性金属。 然后形成第二掩模结构以限定引线的形状。