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    Formation testing apparatus and method for optimizing draw down
    21.
    发明授权
    Formation testing apparatus and method for optimizing draw down 有权
    地层试验装置及优化方法

    公开(公告)号：US07011155B2

    公开(公告)日：2006-03-14

    申请号：US10423420

    申请日：2003-04-25

    申请人： Matthias Meister ,  Jaedong Lee ,  Sven Krueger ,  Eick Niemeyer

    发明人： Matthias Meister ,  Jaedong Lee ,  Sven Krueger ,  Eick Niemeyer

    IPC分类号： E21B49/00 ,  E21B47/10

    CPC分类号： E21B49/008 ,  E21B49/08 ,  E21B49/087

    摘要： A method and apparatus for of determining a formation parameter of interest. The method includes placing a tool into communication with the formation to test the formation, determining a first formation characteristic during a first test portion, initiating a second test portion, the second test portion having test parameters determined at least in part by the determinations made during the first test portion, determining a second formation characteristic during the second test portion, and determining the formation parameter from one of the first formation characteristic and the second formation characteristic. The apparatus includes a draw down unit and a control system for closed loop control of the draw down unit. A microprocessor in the control system processes signals from a sensor in the draw down unit to determine formation characteristics and to determine test parameters for subsequent test portions.

    摘要翻译： 一种用于确定感兴趣的地层参数的方法和装置。 该方法包括将工具与地层连通以测试地层，确定第一测试部分期间的第一地层特征，启动第二测试部分，第二测试部分具有至少部分地通过在 第一测试部分，确定第二测试部分期间的第二形成特征，以及根据第一形成特征和第二形成特征中的一个确定形成参数。 该设备包括一个牵引单元和一个用于闭合控制牵引单元的控制系统。 控制系统中的微处理器处理来自牵引单元中的传感器的信号以确定形成特征并确定后续测试部分的测试参数。

    METHOD OF MANUFACTURING NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY DEVICE MANUFACTURED BY THE METHOD
    23.
    发明申请
    METHOD OF MANUFACTURING NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY DEVICE MANUFACTURED BY THE METHOD 有权
    制造非易失性存储器件的方法和由该方法制造的非易失性存储器件

    公开(公告)号：US20110266606A1

    公开(公告)日：2011-11-03

    申请号：US13179842

    申请日：2011-07-11

    申请人： Imsoo Park ,  Young-Hoo Kim ,  Changki Hong ,  Jaedong Lee ,  Daehong Eom ,  Sung-Jun Kim

    发明人： Imsoo Park ,  Young-Hoo Kim ,  Changki Hong ,  Jaedong Lee ,  Daehong Eom ,  Sung-Jun Kim

    IPC分类号： H01L29/78

    CPC分类号： H01L27/11578 ,  G11C16/0483 ,  H01L27/11582 ,  H01L29/792 ,  H01L29/7926

    摘要： A method of manufacturing a nonvolatile memory device having a three-dimensional memory device includes alternately stacking a plurality of first and second material layers having a different etching selectivity on a semiconductor substrate; forming an opening penetrating the plurality of first and second material layers; removing the first material layers exposed by the opening to form extended portions extending in a direction perpendicular to the semiconductor substrate from the opening; conformally forming a charge storage layer along a surface of the opening and the extended portions; and removing the charge storage layer formed on sidewalls of the second material layers to locally form the charge storage layer patterns in the extended portions.

    摘要翻译： 一种制造具有三维存储器件的非易失性存储器件的方法包括在半导体衬底上交替堆叠具有不同蚀刻选择性的多个第一和第二材料层; 形成贯穿所述多个第一和第二材料层的开口; 去除由开口暴露的第一材料层，以形成从开口垂直于半导体衬底的方向延伸的延伸部分; 沿着开口和延伸部分的表面保形地形成电荷存储层; 并且去除形成在第二材料层的侧壁上的电荷存储层，以在延伸部分中局部形成电荷存储层图案。

    Method of manufacturing nonvolatile memory device and nonvolatile memory device manufactured by the method
    25.
    发明申请
    Method of manufacturing nonvolatile memory device and nonvolatile memory device manufactured by the method 有权
    通过该方法制造非易失性存储器件和非易失性存储器件的制造方法

    公开(公告)号：US20100120214A1

    公开(公告)日：2010-05-13

    申请号：US12590614

    申请日：2009-11-10

    申请人： Imsoo Park ,  Young-Hoo Kim ,  Changki Hong ,  Jaedong Lee ,  Daehong Eom ,  Sung-Jun Kim

    发明人： Imsoo Park ,  Young-Hoo Kim ,  Changki Hong ,  Jaedong Lee ,  Daehong Eom ,  Sung-Jun Kim

    IPC分类号： H01L21/336

    CPC分类号： H01L27/11578 ,  G11C16/0483 ,  H01L27/11582 ,  H01L29/792 ,  H01L29/7926

    摘要： A method of manufacturing a nonvolatile memory device having a three-dimensional memory device includes alternately stacking a plurality of first and second material layers having a different etching selectivity on a semiconductor substrate; forming an opening penetrating the plurality of first and second material layers; removing the first material layers exposed by the opening to form extended portions extending in a direction perpendicular to the semiconductor substrate from the opening; conformally forming a charge storage layer along a surface of the opening and the extended portions; and removing the charge storage layer formed on sidewalls of the second material layers to locally form the charge storage layer patterns in the extended portions.

    摘要翻译： 一种制造具有三维存储器件的非易失性存储器件的方法包括在半导体衬底上交替堆叠具有不同蚀刻选择性的多个第一和第二材料层; 形成贯穿所述多个第一和第二材料层的开口; 去除由开口暴露的第一材料层，以形成从开口垂直于半导体衬底的方向延伸的延伸部分; 沿着开口和延伸部分的表面保形地形成电荷存储层; 并且去除形成在第二材料层的侧壁上的电荷存储层，以在延伸部分中局部形成电荷存储层图案。

    Slurry compositions and CMP methods using the same
    26.
    发明申请
    Slurry compositions and CMP methods using the same 有权

    公开(公告)号：US20080124913A1

    公开(公告)日：2008-05-29

    申请号：US11984399

    申请日：2007-11-16

    申请人： Jaekwang Choi ,  Jaedong Lee ,  Chang-Ki Hong

    发明人： Jaekwang Choi ,  Jaedong Lee ,  Chang-Ki Hong

    IPC分类号： H01L21/4763 ,  H01L21/304

    CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/7684

    摘要： The exemplary embodiments of the present invention providing new slurry compositions suitable for use in processes involving the chemical mechanical polishing (CMP) of a polysilicon layer. The slurry compositions include one or more non-ionic polymeric surfactants that will selectively form a passivation layer on an exposed polysilicon surface in order to suppress the polysilicon removal rate relative to silicon oxide and silicon nitride and improve the planarity of the polished substrate. Exemplary surfactants include alkyl and aryl alcohols of ethylene oxide (EO) and propylene oxide (PO) block copolymers and may be present in the slurry compositions in an amount of up to about 5 wt %, although much smaller concentrations may be effective. Other slurry additives may include viscosity modifiers, pH modifiers, dispersion agents, chelating agents, and amine or imine surfactants suitable for modifying the relative removal rates of silicon nitride and silicon oxide.

    Slurry compositions and CMP methods using the same
    27.
    发明申请
    Slurry compositions and CMP methods using the same 失效
    浆料组合物和使用其的CMP方法

    公开(公告)号：US20050130428A1

    公开(公告)日：2005-06-16

    申请号：US10807139

    申请日：2004-03-24

    申请人： Jaekwang Choi ,  Jaedong Lee ,  Chang-ki Hong

    发明人： Jaekwang Choi ,  Jaedong Lee ,  Chang-ki Hong

    IPC分类号： C09G1/02 ,  H01L21/302 ,  H01L21/321 ,  H01L21/461 ,  H01L21/76 ,  H01L21/768

    CPC分类号： C09G1/02 ,  C09K3/1463 ,  H01L21/3212 ,  H01L21/7684

    摘要： The exemplary embodiments of the present invention providing new slurry compositions suitable for use in processes involving the chemical mechanical polishing (CMP) of a polysilicon layer. The slurry compositions include one or more non-ionic polymeric surfactants that will selectively form a passivation layer on an exposed polysilicon surface in order to suppress the polysilicon removal rate relative to silicon oxide and silicon nitride and improve the planarity of the polished substrate. Exemplary surfactants include alkyl and aryl alcohols of ethylene oxide (EO) and propylene oxide (PO) block copolymers and may be present in the slurry compositions in an amount of up to about 5 wt %, although much smaller concentrations may be effective. Other slurry additives may include viscosity modifiers, pH modifiers, dispersion agents, chelating agents, and amine or imine surfactants suitable for modifying the relative removal rates of silicon nitride and silicon oxide.

    摘要翻译： 提供适用于涉及多晶硅层的化学机械抛光（CMP）的工艺的新的浆料组合物的本发明的示例性实施方案。 浆料组合物包括一种或多种非离子聚合物表面活性剂，其将在暴露的多晶硅表面上选择性地形成钝化层，以便抑制相对于氧化硅和氮化硅的多晶硅去除速率并提高抛光的基材的平面度。 示例性的表面活性剂包括环氧乙烷（EO）和环氧丙烷（PO）嵌段共聚物的烷基和芳基醇，并且可以以高达约5重量％的量存在于浆料组合物中，尽管更小的浓度可能是有效的。 其它浆料添加剂可以包括粘度调节剂，pH调节剂，分散剂，螯合剂和适于改变氮化硅和氧化硅的相对去除速率的胺或亚胺表面活性剂。

    System and Method for Crossflow Detection and Intervention in Production Wellbores
    29.
    发明申请
    System and Method for Crossflow Detection and Intervention in Production Wellbores 审中-公开
    生产井中横流检测和干预的系统和方法

    公开(公告)号：US20080257544A1

    公开(公告)日：2008-10-23

    申请号：US11738327

    申请日：2007-04-20

    申请人： Brian L. Thigpen ,  Guy P. Vachon ,  Garabed Yeriazarian ,  Jaedong Lee ,  Chee M. Chok ,  Clark Sann ,  Xin Liu

    发明人： Brian L. Thigpen ,  Guy P. Vachon ,  Garabed Yeriazarian ,  Jaedong Lee ,  Chee M. Chok ,  Clark Sann ,  Xin Liu

    IPC分类号： E21B47/10

    CPC分类号： E21B43/14 ,  E21B47/10

    摘要： A system and method for managing a production from a wellbore that includes taking measurements relating to one or more selected parameters for each of the production zones over a time period and determining the occurrence of the cross flow in the wellbore using a trend of the one or more of the measurements. The system includes a processor that receives information relating to the measurements made over time relating to the selected parameters, wherein the processor determines or predicts the occurrence of the cross flow from a trend of at least one of the measurements.

    摘要翻译： 一种用于从井筒管理生产的系统和方法，其包括在一段时间内对每个生产区域中的一个或多个选定参数进行测量，并使用所述一个或多个生产区域的趋势来确定井眼中的横流的发生， 更多的测量。 该系统包括处理器，其接收与所选择的参数相关的随时间推移的测量的信息，其中处理器根据至少一个测量的趋势来确定或预测交叉流的发生。

    Slurry compositions and CMP methods using the same
    30.
    发明授权
    Slurry compositions and CMP methods using the same 失效
    浆料组合物和使用其的CMP方法

    公开(公告)号：US07314578B2

    公开(公告)日：2008-01-01

    申请号：US10807139

    申请日：2004-03-24

    申请人： Jaekwang Choi ,  Jaedong Lee ,  Chang-Ki Hong

    发明人： Jaekwang Choi ,  Jaedong Lee ,  Chang-Ki Hong

    IPC分类号： C09K5/00

    CPC分类号： C09G1/02 ,  C09K3/1463 ,  H01L21/3212 ,  H01L21/7684

    摘要： The exemplary embodiments of the present invention providing new slurry compositions suitable for use in processes involving the chemical mechanical polishing (CMP) of a polysilicon layer. The slurry compositions include one or more non-ionic polymeric surfactants that will selectively form a passivation layer on an exposed polysilicon surface in order to suppress the polysilicon removal rate relative to silicon oxide and silicon nitride and improve the planarity of the polished substrate. Exemplary surfactants include alkyl and aryl alcohols of ethylene oxide (EO) and propylene oxide (PO) block copolymers and may be present in the slurry compositions in an amount of up to about 5 wt %, although much smaller concentrations may be effective. Other slurry additives may include viscosity modifiers, pH modifiers, dispersion agents, chelating agents, and amine or imine surfactants suitable for modifying the relative removal rates of silicon nitride and silicon oxide.

    摘要翻译： 提供适用于涉及多晶硅层的化学机械抛光（CMP）的工艺的新的浆料组合物的本发明的示例性实施方案。 浆料组合物包括一种或多种非离子聚合物表面活性剂，其将在暴露的多晶硅表面上选择性地形成钝化层，以便抑制相对于氧化硅和氮化硅的多晶硅去除速率并提高抛光的基材的平面度。 示例性的表面活性剂包括环氧乙烷（EO）和环氧丙烷（PO）嵌段共聚物的烷基和芳基醇，并且可以以高达约5重量％的量存在于浆料组合物中，尽管更小的浓度可能是有效的。 其它浆料添加剂可以包括粘度调节剂，pH调节剂，分散剂，螯合剂和适于改变氮化硅和氧化硅的相对去除速率的胺或亚胺表面活性剂。