公开(公告)号：US07994011B2

公开(公告)日：2011-08-09

申请号：US12590614

申请日：2009-11-10

申请人： Imsoo Park ,  Young-Hoo Kim ,  Changki Hong ,  Jaedong Lee ,  Daehong Eom ,  Sung-Jun Kim

发明人： Imsoo Park ,  Young-Hoo Kim ,  Changki Hong ,  Jaedong Lee ,  Daehong Eom ,  Sung-Jun Kim

IPC分类号： H01L21/336 ,  H01L29/66

CPC分类号： H01L27/11578 ,  G11C16/0483 ,  H01L27/11582 ,  H01L29/792 ,  H01L29/7926

摘要： A method of manufacturing a nonvolatile memory device having a three-dimensional memory device includes alternately stacking a plurality of first and second material layers having a different etching selectivity on a semiconductor substrate; forming an opening penetrating the plurality of first and second material layers; removing the first material layers exposed by the opening to form extended portions extending in a direction perpendicular to the semiconductor substrate from the opening; conformally forming a charge storage layer along a surface of the opening and the extended portions; and removing the charge storage layer formed on sidewalls of the second material layers to locally form the charge storage layer patterns in the extended portions.

摘要翻译： 一种制造具有三维存储器件的非易失性存储器件的方法包括在半导体衬底上交替堆叠具有不同蚀刻选择性的多个第一和第二材料层; 形成贯穿所述多个第一和第二材料层的开口; 去除由开口暴露的第一材料层，以形成从开口垂直于半导体衬底的方向延伸的延伸部分; 沿着开口和延伸部分的表面保形地形成电荷存储层; 并且去除形成在第二材料层的侧壁上的电荷存储层，以在延伸部分中局部形成电荷存储层图案。

公开(公告)号：US20110266606A1

公开(公告)日：2011-11-03

申请号：US13179842

申请日：2011-07-11

申请人： Imsoo Park ,  Young-Hoo Kim ,  Changki Hong ,  Jaedong Lee ,  Daehong Eom ,  Sung-Jun Kim

发明人： Imsoo Park ,  Young-Hoo Kim ,  Changki Hong ,  Jaedong Lee ,  Daehong Eom ,  Sung-Jun Kim

IPC分类号： H01L29/78

CPC分类号： H01L27/11578 ,  G11C16/0483 ,  H01L27/11582 ,  H01L29/792 ,  H01L29/7926

摘要： A method of manufacturing a nonvolatile memory device having a three-dimensional memory device includes alternately stacking a plurality of first and second material layers having a different etching selectivity on a semiconductor substrate; forming an opening penetrating the plurality of first and second material layers; removing the first material layers exposed by the opening to form extended portions extending in a direction perpendicular to the semiconductor substrate from the opening; conformally forming a charge storage layer along a surface of the opening and the extended portions; and removing the charge storage layer formed on sidewalls of the second material layers to locally form the charge storage layer patterns in the extended portions.

摘要翻译： 一种制造具有三维存储器件的非易失性存储器件的方法包括在半导体衬底上交替堆叠具有不同蚀刻选择性的多个第一和第二材料层; 形成贯穿所述多个第一和第二材料层的开口; 去除由开口暴露的第一材料层，以形成从开口垂直于半导体衬底的方向延伸的延伸部分; 沿着开口和延伸部分的表面保形地形成电荷存储层; 并且去除形成在第二材料层的侧壁上的电荷存储层，以在延伸部分中局部形成电荷存储层图案。

公开(公告)号：US20100120214A1

公开(公告)日：2010-05-13

申请号：US12590614

申请日：2009-11-10

申请人： Imsoo Park ,  Young-Hoo Kim ,  Changki Hong ,  Jaedong Lee ,  Daehong Eom ,  Sung-Jun Kim

发明人： Imsoo Park ,  Young-Hoo Kim ,  Changki Hong ,  Jaedong Lee ,  Daehong Eom ,  Sung-Jun Kim

IPC分类号： H01L21/336

CPC分类号： H01L27/11578 ,  G11C16/0483 ,  H01L27/11582 ,  H01L29/792 ,  H01L29/7926

摘要： A method of manufacturing a nonvolatile memory device having a three-dimensional memory device includes alternately stacking a plurality of first and second material layers having a different etching selectivity on a semiconductor substrate; forming an opening penetrating the plurality of first and second material layers; removing the first material layers exposed by the opening to form extended portions extending in a direction perpendicular to the semiconductor substrate from the opening; conformally forming a charge storage layer along a surface of the opening and the extended portions; and removing the charge storage layer formed on sidewalls of the second material layers to locally form the charge storage layer patterns in the extended portions.

摘要翻译： 一种制造具有三维存储器件的非易失性存储器件的方法包括在半导体衬底上交替堆叠具有不同蚀刻选择性的多个第一和第二材料层; 形成贯穿所述多个第一和第二材料层的开口; 去除由开口暴露的第一材料层，以形成从开口垂直于半导体衬底的方向延伸的延伸部分; 沿着开口和延伸部分的表面保形地形成电荷存储层; 并且去除形成在第二材料层的侧壁上的电荷存储层，以在延伸部分中局部形成电荷存储层图案。

公开(公告)号：US08404548B2

公开(公告)日：2013-03-26

申请号：US13179842

申请日：2011-07-11

申请人： Imsoo Park ,  Young-Hoo Kim ,  Changki Hong ,  Jaedong Lee ,  Daehong Eom ,  Sung-Jun Kim

发明人： Imsoo Park ,  Young-Hoo Kim ,  Changki Hong ,  Jaedong Lee ,  Daehong Eom ,  Sung-Jun Kim

IPC分类号： H01L21/336

CPC分类号： H01L27/11578 ,  G11C16/0483 ,  H01L27/11582 ,  H01L29/792 ,  H01L29/7926

摘要： A method of manufacturing a nonvolatile memory device having a three-dimensional memory device includes alternately stacking a plurality of first and second material layers having a different etching selectivity on a semiconductor substrate; forming an opening penetrating the plurality of first and second material layers; removing the first material layers exposed by the opening to form extended portions extending in a direction perpendicular to the semiconductor substrate from the opening; conformally forming a charge storage layer along a surface of the opening and the extended portions; and removing the charge storage layer formed on sidewalls of the second material layers to locally form the charge storage layer patterns in the extended portions.

摘要翻译： 一种制造具有三维存储器件的非易失性存储器件的方法包括在半导体衬底上交替堆叠具有不同蚀刻选择性的多个第一和第二材料层; 形成贯穿所述多个第一和第二材料层的开口; 去除由开口暴露的第一材料层，以形成从开口垂直于半导体衬底的方向延伸的延伸部分; 沿着开口和延伸部分的表面保形地形成电荷存储层; 并且去除形成在第二材料层的侧壁上的电荷存储层，以在延伸部分中局部形成电荷存储层图案。

公开(公告)号：US08428555B2

公开(公告)日：2013-04-23

申请号：US11523708

申请日：2006-09-20

申请人： Sung-Jun Kim ,  Seong-Joon Jeon ,  Joo-Yong Park ,  Myeon-Kee Youn

发明人： Sung-Jun Kim ,  Seong-Joon Jeon ,  Joo-Yong Park ,  Myeon-Kee Youn

IPC分类号： H04W4/00

CPC分类号： H04W12/06 ,  H04L63/102 ,  H04L65/80 ,  H04M7/0078 ,  H04M2203/2066 ,  H04M2207/18 ,  H04W48/02 ,  H04W74/0875 ,  H04W84/12

摘要： A wireless network system and method to secure Quality of Service (QoS) according to a type of Wireless Local Area Network (WLAN) service in a WLAN communication system based on IEEE 802.11 includes: an authentication server adapted to set a priority for an access category of a wireless network service requested by a user to perform an authentication procedure in response to a user terminal requesting authentication for access to a wireless network; and an Access Point (AP) adapted to receive and store access category information of the user terminal authenticated by the authentication server and to compare access category information contained in a packet received from the user terminal to the previously stored access category information of the user terminal to control access to the wireless network.

摘要翻译： 基于IEEE 802.11的WLAN通信系统中根据无线局域网（WLAN）业务类型来保护服务质量（QoS）的无线网络系统和方法包括：认证服务器，其适于设置接入类别的优先级 用户响应于请求用于接入无线网络的认证的用户终端来执行认证过程的无线网络服务; 以及适于接收和存储由认证服务器认证的用户终端的接入类别信息的接入点（AP），并将包含在从用户终端接收的分组中的接入类别信息与用户终端的先前存储的接入类别信息进行比较 以控制对无线网络的访问。

公开(公告)号：US06437907B1

公开(公告)日：2002-08-20

申请号：US09610321

申请日：2000-07-05

申请人： Soo-Young Yoon ,  Seong-Teak Hwang ,  Rae-Sung Jung ,  Jeong-Mee Kim ,  Sung-Jun Kim

发明人： Soo-Young Yoon ,  Seong-Teak Hwang ,  Rae-Sung Jung ,  Jeong-Mee Kim ,  Sung-Jun Kim

IPC分类号： H04B1012

CPC分类号： H04B10/294

摘要： A method and apparatus for amplifying the optical signals of a C-band (1550 nm wavelength band) and a L-band (1580 nm wavelength band) in a wide-band optical fiber amplifier, wherein the incoming optical signals are separated into the 1550 nm wavelength band and the 1580 nm wavelength band by a WVDM optical coupler and respectively amplified by a C-band EDFA and a L-band EDFA A backward ASE generated by the C-band EDFA is fed back to the L-band EDFA by a circulator as a supplementary pumping light to the amplification of the optical signals of the 1580 nm wavelength band.

摘要翻译： 一种用于放大宽带光纤放大器中的C波段（1550nm波长带）和L波段（1580nm波长带）的光信号的方法和装置，其中输入光信号被分离成1550 nm波长带和1580nm波长带，并由C波段EDFA和L波段EDFA A分别放大，由C波段EDFA产生的反向ASE由A波段EDFA反馈回L波段EDFA 循环器作为辅助泵浦光，以放大1580nm波长带的光信号。

公开(公告)号：US06404540B1

公开(公告)日：2002-06-11

申请号：US09597779

申请日：2000-06-20

申请人： Seong-Teak Hwang ,  Soo-Young Yoon ,  Rae-Sung Jung ,  Jeong-Mee Kim ,  Sung-Jun Kim

发明人： Seong-Teak Hwang ,  Soo-Young Yoon ,  Rae-Sung Jung ,  Jeong-Mee Kim ,  Sung-Jun Kim

IPC分类号： H01S300

CPC分类号： H04B10/294 ,  H01S3/06754 ,  H01S3/1608 ,  H01S2301/04

摘要： A L-band(long-band) optical fiber amplifier is provided. The L-band optical fiber amplifier includes an optical fiber doped with a rare-earth element, at least one pumping light source for emitting pumping light to the optical fiber, a seed beam source for emitting a seed beam at a predetermined wavelength band, and a seed beam coupler disposed between an input terminal and the optical fiber, for coupling an input optical signal with the seed beam and feeding the coupled light forward to the optical fiber. By use of the seed beam, the L-band optical fiber amplifier improves gain flatness characteristics at wavelengths of an optical signal and increases amplification efficiency when the length of the optical fiber and the intensities of the optical signal and the pumping light are changed.

摘要翻译： 提供了一个L波段（长波段）光纤放大器。 L波段光纤放大器包括掺杂有稀土元素的光纤，用于向光纤发射泵浦光的至少一个泵浦光源，用于发射预定波长带的种子束的种束源，以及 种子光束耦合器，设置在输入端和光纤之间，用于将输入光信号与种子光耦合并将耦合的光向前馈送到光纤。 通过使用种子束，L波段光纤放大器提高光信号的波长处的增益平坦度特性，并且当光纤的长度和光信号和泵浦光的强度改变时，增加放大效率。

公开(公告)号：US08711310B2

公开(公告)日：2014-04-29

申请号：US13150715

申请日：2011-06-01

申请人： Ho-Jun Lee ,  Sang Wook Lee ,  Sung-Jun Kim

发明人： Ho-Jun Lee ,  Sang Wook Lee ,  Sung-Jun Kim

IPC分类号： G02F1/1343

CPC分类号： G02F1/1341 ,  G02F1/1343 ,  G02F2202/16

摘要： A liquid crystal display includes a first substrate and a second substrate which face each other and each include a display area and a peripheral area, a liquid crystal layer in the display areas and between the first substrate and the second substrate, and a conductive sealant combining the first substrate and the second substrate. The first substrate includes a common electrode in the display and peripheral areas of the first substrate. The second substrate includes a first and signal lines in the peripheral area of the second substrate, a first insulating layer on the first signal line and the second signal line, and a conductor on the first insulating layer in the peripheral area and connected to the first signal line through a contact hole. The common electrode includes a cutout corresponding to the conductor, and the cutout is at a corner of the display areas.

摘要翻译： 液晶显示器包括第一基板和第二基板，所述第一基板和第二基板彼此面对并且各自包括显示区域和周边区域，显示区域中的液晶层以及第一基板和第二基板之间的导电密封剂组合 第一基板和第二基板。 第一基板包括显示器中的公共电极和第一基板的外围区域。 第二基板包括在第二基板的外围区域中的第一和第二信号线，第一信号线和第二信号线上的第一绝缘层，以及周边区域中的第一绝缘层上的导体，并连接到第一基板 信号线通过接触孔。 公共电极包括对应于导体的切口，并且切口位于显示区域的拐角处。

公开(公告)号：US08173723B2

公开(公告)日：2012-05-08

申请号：US12621580

申请日：2009-11-19

申请人： Sung-Jun Kim ,  Chang-Min Hong

发明人： Sung-Jun Kim ,  Chang-Min Hong

IPC分类号： G21F1/10

CPC分类号： H01B1/22 ,  C08K3/08 ,  C08K7/06 ,  C08K7/14 ,  C08K2003/0812 ,  C08K2003/085 ,  C08K2201/001 ,  H01L23/295 ,  H01L2924/0002 ,  H01L2924/3025 ,  H05K9/0083 ,  H01L2924/00 ,  C08L81/04

摘要： Disclosed is an electromagnetic wave EMI/RFI shielding resin composite material that includes a thermoplastic polymer resin, an electrically conductive filler having a polyhedral shape or being capable of forming a polyhedral shape, and a low-melting point metal, and a molded product made using the EMI/RFI shielding resin composite material.

摘要翻译： 公开了一种电磁波EMI / RFI屏蔽树脂复合材料，其包括热塑性聚合物树脂，具有多面体形状或能够形成多面体形状的导电填料和低熔点金属，以及使用 EMI / RFI屏蔽树脂复合材料。

公开(公告)号：US07981797B2

公开(公告)日：2011-07-19

申请号：US12146179

申请日：2008-06-25

申请人： Cheol-Hwi Ryu ,  Hyung-Soon Park ,  Jong-Han Shin ,  Jum-Yong Park ,  Sung-Jun Kim

发明人： Cheol-Hwi Ryu ,  Hyung-Soon Park ,  Jong-Han Shin ,  Jum-Yong Park ,  Sung-Jun Kim

IPC分类号： H01L21/44

CPC分类号： H01L27/101 ,  H01L45/06 ,  H01L45/124 ,  H01L45/1683

摘要： A method of manufacturing a phase-change random access memory device includes forming an interlayer insulating film on a semiconductor substrate, on which a bottom structure is formed, and patterning the interlayer insulating film to form a contact hole, forming a spacer on the side wall of the contact hole; forming a dielectric layer in the contact hole, and removing the spacer to form a bottom electrode contact hole. Therefore, the contact area between the bottom electrode contact and the phase-change material layer can be minimized.

摘要翻译： 一种制造相变随机存取存储器件的方法包括在半导体衬底上形成层间绝缘膜，在其上形成底部结构，并对该层间绝缘膜进行构图以形成接触孔，在侧壁上形成间隔物 的接触孔; 在接触孔中形成电介质层，并且去除间隔物以形成底部电极接触孔。 因此，可以使底部电极接触和相变材料层之间的接触面积最小化。