公开(公告)号：US07994011B2

公开(公告)日：2011-08-09

申请号：US12590614

申请日：2009-11-10

申请人： Imsoo Park ,  Young-Hoo Kim ,  Changki Hong ,  Jaedong Lee ,  Daehong Eom ,  Sung-Jun Kim

发明人： Imsoo Park ,  Young-Hoo Kim ,  Changki Hong ,  Jaedong Lee ,  Daehong Eom ,  Sung-Jun Kim

IPC分类号： H01L21/336 ,  H01L29/66

CPC分类号： H01L27/11578 ,  G11C16/0483 ,  H01L27/11582 ,  H01L29/792 ,  H01L29/7926

摘要： A method of manufacturing a nonvolatile memory device having a three-dimensional memory device includes alternately stacking a plurality of first and second material layers having a different etching selectivity on a semiconductor substrate; forming an opening penetrating the plurality of first and second material layers; removing the first material layers exposed by the opening to form extended portions extending in a direction perpendicular to the semiconductor substrate from the opening; conformally forming a charge storage layer along a surface of the opening and the extended portions; and removing the charge storage layer formed on sidewalls of the second material layers to locally form the charge storage layer patterns in the extended portions.

摘要翻译： 一种制造具有三维存储器件的非易失性存储器件的方法包括在半导体衬底上交替堆叠具有不同蚀刻选择性的多个第一和第二材料层; 形成贯穿所述多个第一和第二材料层的开口; 去除由开口暴露的第一材料层，以形成从开口垂直于半导体衬底的方向延伸的延伸部分; 沿着开口和延伸部分的表面保形地形成电荷存储层; 并且去除形成在第二材料层的侧壁上的电荷存储层，以在延伸部分中局部形成电荷存储层图案。

公开(公告)号：US20110266606A1

公开(公告)日：2011-11-03

申请号：US13179842

申请日：2011-07-11

申请人： Imsoo Park ,  Young-Hoo Kim ,  Changki Hong ,  Jaedong Lee ,  Daehong Eom ,  Sung-Jun Kim

发明人： Imsoo Park ,  Young-Hoo Kim ,  Changki Hong ,  Jaedong Lee ,  Daehong Eom ,  Sung-Jun Kim

IPC分类号： H01L29/78

CPC分类号： H01L27/11578 ,  G11C16/0483 ,  H01L27/11582 ,  H01L29/792 ,  H01L29/7926

摘要： A method of manufacturing a nonvolatile memory device having a three-dimensional memory device includes alternately stacking a plurality of first and second material layers having a different etching selectivity on a semiconductor substrate; forming an opening penetrating the plurality of first and second material layers; removing the first material layers exposed by the opening to form extended portions extending in a direction perpendicular to the semiconductor substrate from the opening; conformally forming a charge storage layer along a surface of the opening and the extended portions; and removing the charge storage layer formed on sidewalls of the second material layers to locally form the charge storage layer patterns in the extended portions.

摘要翻译： 一种制造具有三维存储器件的非易失性存储器件的方法包括在半导体衬底上交替堆叠具有不同蚀刻选择性的多个第一和第二材料层; 形成贯穿所述多个第一和第二材料层的开口; 去除由开口暴露的第一材料层，以形成从开口垂直于半导体衬底的方向延伸的延伸部分; 沿着开口和延伸部分的表面保形地形成电荷存储层; 并且去除形成在第二材料层的侧壁上的电荷存储层，以在延伸部分中局部形成电荷存储层图案。

公开(公告)号：US20100120214A1

公开(公告)日：2010-05-13

申请号：US12590614

申请日：2009-11-10

申请人： Imsoo Park ,  Young-Hoo Kim ,  Changki Hong ,  Jaedong Lee ,  Daehong Eom ,  Sung-Jun Kim

发明人： Imsoo Park ,  Young-Hoo Kim ,  Changki Hong ,  Jaedong Lee ,  Daehong Eom ,  Sung-Jun Kim

IPC分类号： H01L21/336

CPC分类号： H01L27/11578 ,  G11C16/0483 ,  H01L27/11582 ,  H01L29/792 ,  H01L29/7926

摘要： A method of manufacturing a nonvolatile memory device having a three-dimensional memory device includes alternately stacking a plurality of first and second material layers having a different etching selectivity on a semiconductor substrate; forming an opening penetrating the plurality of first and second material layers; removing the first material layers exposed by the opening to form extended portions extending in a direction perpendicular to the semiconductor substrate from the opening; conformally forming a charge storage layer along a surface of the opening and the extended portions; and removing the charge storage layer formed on sidewalls of the second material layers to locally form the charge storage layer patterns in the extended portions.

摘要翻译： 一种制造具有三维存储器件的非易失性存储器件的方法包括在半导体衬底上交替堆叠具有不同蚀刻选择性的多个第一和第二材料层; 形成贯穿所述多个第一和第二材料层的开口; 去除由开口暴露的第一材料层，以形成从开口垂直于半导体衬底的方向延伸的延伸部分; 沿着开口和延伸部分的表面保形地形成电荷存储层; 并且去除形成在第二材料层的侧壁上的电荷存储层，以在延伸部分中局部形成电荷存储层图案。

公开(公告)号：US08404548B2

公开(公告)日：2013-03-26

申请号：US13179842

申请日：2011-07-11

申请人： Imsoo Park ,  Young-Hoo Kim ,  Changki Hong ,  Jaedong Lee ,  Daehong Eom ,  Sung-Jun Kim

发明人： Imsoo Park ,  Young-Hoo Kim ,  Changki Hong ,  Jaedong Lee ,  Daehong Eom ,  Sung-Jun Kim

IPC分类号： H01L21/336

CPC分类号： H01L27/11578 ,  G11C16/0483 ,  H01L27/11582 ,  H01L29/792 ,  H01L29/7926

摘要： A method of manufacturing a nonvolatile memory device having a three-dimensional memory device includes alternately stacking a plurality of first and second material layers having a different etching selectivity on a semiconductor substrate; forming an opening penetrating the plurality of first and second material layers; removing the first material layers exposed by the opening to form extended portions extending in a direction perpendicular to the semiconductor substrate from the opening; conformally forming a charge storage layer along a surface of the opening and the extended portions; and removing the charge storage layer formed on sidewalls of the second material layers to locally form the charge storage layer patterns in the extended portions.

摘要翻译： 一种制造具有三维存储器件的非易失性存储器件的方法包括在半导体衬底上交替堆叠具有不同蚀刻选择性的多个第一和第二材料层; 形成贯穿所述多个第一和第二材料层的开口; 去除由开口暴露的第一材料层，以形成从开口垂直于半导体衬底的方向延伸的延伸部分; 沿着开口和延伸部分的表面保形地形成电荷存储层; 并且去除形成在第二材料层的侧壁上的电荷存储层，以在延伸部分中局部形成电荷存储层图案。

公开(公告)号：US08076198B2

公开(公告)日：2011-12-13

申请号：US12657092

申请日：2010-01-13

申请人： Hyosan Lee ,  Boun Yoon ,  Kuntack Lee ,  Donghyun Kim ,  Daehyuk Kang ,  Imsoo Park ,  Youngok Kim ,  Young-Hoo Kim ,  Sang Won Bae

发明人： Hyosan Lee ,  Boun Yoon ,  Kuntack Lee ,  Donghyun Kim ,  Daehyuk Kang ,  Imsoo Park ,  Youngok Kim ,  Young-Hoo Kim ,  Sang Won Bae

IPC分类号： H01L21/336 ,  H01L21/76 ,  H01L21/4763 ,  H01L21/461

CPC分类号： H01L27/11551 ,  H01L27/11556 ,  H01L27/11578 ,  H01L29/66825 ,  H01L29/7881

摘要： A method of fabricating a nonvolatile memory device with a three-dimensional structure includes alternately stacking first and second material layers in two or more layers on a semiconductor substrate, forming trenches penetrating the stacked first and second material layers by performing a first etching process, and removing the second material layers exposed in the trenches by performing a second etching process. The first and second material layers are formed of materials that have the same main component but have different impurity contents, respectively.

摘要翻译： 一种制造具有三维结构的非易失性存储器件的方法包括在半导体衬底上交替堆叠两层或多层第一和第二材料层，通过执行第一蚀刻工艺形成贯穿层叠的第一和第二材料层的沟槽，以及 通过执行第二蚀刻工艺去除在沟槽中暴露的第二材料层。 第一和第二材料层由具有相同主要成分但具有不同杂质含量的材料形成。

公开(公告)号：US20100178755A1

公开(公告)日：2010-07-15

申请号：US12657092

申请日：2010-01-13

申请人： Hyosan Lee ,  Boun Yoon ,  Kuntack Lee ,  Donghyun Kim ,  Daehyuk Kang ,  Imsoo Park ,  Youngok Kim ,  Young-Hoo Kim ,  Sang Won Bae

发明人： Hyosan Lee ,  Boun Yoon ,  Kuntack Lee ,  Donghyun Kim ,  Daehyuk Kang ,  Imsoo Park ,  Youngok Kim ,  Young-Hoo Kim ,  Sang Won Bae

IPC分类号： H01L21/20

CPC分类号： H01L27/11551 ,  H01L27/11556 ,  H01L27/11578 ,  H01L29/66825 ,  H01L29/7881

摘要： A method of fabricating a nonvolatile memory device with a three-dimensional structure includes alternately stacking first and second material layers in two or more layers on a semiconductor substrate, forming trenches penetrating the stacked first and second material layers by performing a first etching process, and removing the second material layers exposed in the trenches by performing a second etching process. The first and second material layers are formed of materials that have the same main component but have different impurity contents, respectively.

摘要翻译： 一种制造具有三维结构的非易失性存储器件的方法包括在半导体衬底上交替堆叠两层或多层第一和第二材料层，通过执行第一蚀刻工艺形成贯穿层叠的第一和第二材料层的沟槽，以及 通过执行第二蚀刻工艺去除在沟槽中暴露的第二材料层。 第一和第二材料层由具有相同主要成分但具有不同杂质含量的材料形成。

公开(公告)号：US07968454B2

公开(公告)日：2011-06-28

申请号：US12656084

申请日：2010-01-15

申请人： Imsoo Park ,  Kuntack Lee

发明人： Imsoo Park ,  Kuntack Lee

IPC分类号： H01L21/4763

CPC分类号： H01L21/76804 ,  H01L21/0337 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/3212 ,  H01L21/76825 ,  H01L21/76831 ,  H01L27/1052 ,  H01L27/11517

摘要： A method of forming a pattern structure includes forming a thin film pattern on a substrate, the thin film pattern including depression portions with first bottom widths, forming a protection layer on the thin film pattern by implanting ions into the thin film pattern, and etching a lower portion of the thin film pattern selectively using the protection layer as a mask to increase the first bottom widths of the depression portions into second bottom widths.

摘要翻译： 形成图案结构的方法包括在基板上形成薄膜图案，所述薄膜图案包括具有第一底部宽度的凹陷部分，通过将离子注入到薄膜图案中在薄膜图案上形成保护层，并蚀刻 选择性地使用保护层作为掩模的薄膜图案的下部部分将凹陷部分的第一底部宽度增加到第二底部宽度。

公开(公告)号：US20100184288A1

公开(公告)日：2010-07-22

申请号：US12656084

申请日：2010-01-15

申请人： Imsoo Park ,  Kuntack Lee

发明人： Imsoo Park ,  Kuntack Lee

IPC分类号： H01L21/3205

CPC分类号： H01L21/76804 ,  H01L21/0337 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/3212 ,  H01L21/76825 ,  H01L21/76831 ,  H01L27/1052 ,  H01L27/11517

摘要： A method of forming a pattern structure includes forming a thin film pattern on a substrate, the thin film pattern including depression portions with first bottom widths, forming a protection layer on the thin film pattern by implanting ions into the thin film pattern, and etching a lower portion of the thin film pattern selectively using the protection layer as a mask to increase the first bottom widths of the depression portions into second bottom widths.

摘要翻译： 形成图案结构的方法包括在基板上形成薄膜图案，所述薄膜图案包括具有第一底部宽度的凹陷部分，通过将离子注入到薄膜图案中在薄膜图案上形成保护层，并蚀刻 选择性地使用保护层作为掩模的薄膜图案的下部部分将凹陷部分的第一底部宽度增加到第二底部宽度。