SEMICONDUCTOR DEVICE
    25.
    发明申请

    公开(公告)号:US20250071980A1

    公开(公告)日:2025-02-27

    申请号:US18755088

    申请日:2024-06-26

    Abstract: A semiconductor device may include a substrate including, lower bit line structures from a first region to a second region adjacent to the first region and extending in a second direction perpendicular to the first direction, a second gate structure on the second region of the substrate to be spaced apart from the lower bit line structure, a first offset spacer on a first sidewall corresponding to an end of each of the lower bit line structures in the second direction, a second offset spacer and a first spacer sequentially arranged on a sidewall of the second gate structure, an insulation liner layer at least disposed a surface of the first offset spacer, and a capping pattern covering the lower bit line structures and an upper portion of the second gate structure. The first offset spacer and the insulation liner layer include silicon nitride.

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