公开(公告)号：US10381385B2

公开(公告)日：2019-08-13

申请号：US15996651

申请日：2018-06-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Noriko Miyagi ,  Masayuki Sakakura ,  Tatsuya Arao ,  Ritsuko Nagao ,  Yoshifumi Tanada

IPC: H01L33/00 ,  H01L27/12 ,  G09G3/3233 ,  H01L27/32 ,  H01L51/52 ,  G02F1/1333 ,  H01L23/522 ,  H01L33/40

Abstract: An object of the present invention is to decrease substantial resistance of an electrode such as a transparent electrode or a wiring, and furthermore, to provide a display device for which is possible to apply same voltage to light-emitting elements. In the invention, a auxiliary wiring that is formed in one layer in which a conductive film of a semiconductor element such as an electrode, wiring, a signal line, a scanning line, or a power supply line is connected to an electrode typified by a second electrode, and a wiring. It is preferable that the auxiliary wiring is formed into a conductive film to include low resistive material, especially, formed to include lower resistive material than the resistance of an electrode and a wiring that is required to reduce the resistance.

公开(公告)号：US20180286887A1

公开(公告)日：2018-10-04

申请号：US15996651

申请日：2018-06-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Noriko Miyagi ,  Masayuki Sakakura ,  Tatsuya Arao ,  Ritsuko Nagao ,  Yoshifumi Tanada

IPC: H01L27/12 ,  H01L51/52 ,  G09G3/3233 ,  H01L27/32 ,  G02F1/1333 ,  H01L33/40 ,  H01L23/522

CPC classification number: H01L27/124 ,  G02F1/133345 ,  G09G3/3233 ,  G09G2300/0842 ,  G09G2300/0861 ,  H01L23/5228 ,  H01L27/1222 ,  H01L27/1248 ,  H01L27/3276 ,  H01L27/3279 ,  H01L33/40 ,  H01L51/5206 ,  H01L51/5212 ,  H01L51/5221 ,  H01L51/5228 ,  H01L51/5234 ,  H01L2251/5315

Abstract: An object of the present invention is to decrease substantial resistance of an electrode such as a transparent electrode or a wiring, and furthermore, to provide a display device for which is possible to apply same voltage to light-emitting elements. In the invention, a auxiliary wiring that is formed in one layer in which a conductive film of a semiconductor element such as an electrode, wiring, a signal line, a scanning line, or a power supply line is connected to an electrode typified by a second electrode, and a wiring. It is preferable that the auxiliary wiring is formed into a conductive film to include low resistive material, especially, formed to include lower resistive material than the resistance of an electrode and a wiring that is required to reduce the resistance.

公开(公告)号：US09997542B2

公开(公告)日：2018-06-12

申请号：US15042950

申请日：2016-02-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Noriko Miyagi ,  Masayuki Sakakura ,  Tatsuya Arao ,  Ritsuko Nagao ,  Yoshifumi Tanada

IPC: H01L27/12 ,  H01L27/14 ,  G09G3/3233 ,  H01L27/32 ,  H01L51/52 ,  G02F1/1333 ,  H01L23/522 ,  H01L33/40

CPC classification number: H01L27/124 ,  G02F1/133345 ,  G09G3/3233 ,  G09G2300/0842 ,  G09G2300/0861 ,  H01L23/5228 ,  H01L27/1222 ,  H01L27/1248 ,  H01L27/3276 ,  H01L27/3279 ,  H01L33/40 ,  H01L51/5206 ,  H01L51/5212 ,  H01L51/5221 ,  H01L51/5228 ,  H01L51/5234 ,  H01L2251/5315

Abstract: An object of the present invention is to decrease substantial resistance of an electrode such as a transparent electrode or a wiring, and furthermore, to provide a display device for which is possible to apply same voltage to light-emitting elements. In the invention, a auxiliary wiring that is formed in one layer in which a conductive film of a semiconductor element such as an electrode, wiring, a signal line, a scanning line, or a power supply line is connected to an electrode typified by a second electrode, and a wiring. It is preferable that the auxiliary wiring is formed into a conductive film to include low resistive material, especially, formed to include lower resistive material than the resistance of an electrode and a wiring that is required to reduce the resistance.

公开(公告)号：US09679955B2

公开(公告)日：2017-06-13

申请号：US15134468

申请日：2016-04-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Tatsuya Arao ,  Munehiro Azami

IPC: H01L27/32 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L27/3265 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/78633

Abstract: A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.

公开(公告)号：US09673223B2

公开(公告)日：2017-06-06

申请号：US14589369

申请日：2015-01-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Koji Ono ,  Hideomi Suzawa ,  Tatsuya Arao

IPC: H01L27/12 ,  G02F1/1362 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/786 ,  H01L33/62 ,  H01L33/08

CPC classification number: H01L27/1222 ,  G02F1/13624 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L33/08 ,  H01L33/62 ,  H01L2029/7863 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed is an electroluminescence device having a substrate, a thin film transistor over the substrate, an insulating film over the thin film transistor, an electroluminescence element over the insulating film, a passivation film over the electroluminescence element, and a counter substrate over the passivation film. The electroluminescence element is configured to emit light through the counter substrate, and a space between the substrate and the counter substrate is filled with a filler. The electroluminescence device is featured by the tapered side surface of a gate electrode of the thin film transistor.

公开(公告)号：US09261722B2

公开(公告)日：2016-02-16

申请号：US14306309

申请日：2014-06-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Noriko Miyagi ,  Masayuki Sakakura ,  Tatsuya Arao ,  Ritsuko Nagao ,  Yoshifumi Tanada

IPC: H01L29/04 ,  H01L33/00 ,  G02F1/1333 ,  G09G3/32 ,  H01L27/32 ,  H01L51/52

CPC classification number: H01L27/124 ,  G02F1/133345 ,  G09G3/3233 ,  G09G2300/0842 ,  G09G2300/0861 ,  H01L23/5228 ,  H01L27/1222 ,  H01L27/1248 ,  H01L27/3276 ,  H01L27/3279 ,  H01L33/40 ,  H01L51/5206 ,  H01L51/5212 ,  H01L51/5221 ,  H01L51/5228 ,  H01L51/5234 ,  H01L2251/5315

Abstract: An object of the present invention is to decrease substantial resistance of an electrode such as a transparent electrode or a wiring, and furthermore, to provide a display device for which is possible to apply same voltage to light-emitting elements. In the invention, a auxiliary wiring that is formed in one layer in which a conductive film of a semiconductor element such as an electrode, wiring, a signal line, a scanning line, or a power supply line is connected to an electrode typified by a second electrode, and a wiring. It is preferable that the auxiliary wiring is formed into a conductive film to include low resistive material, especially, formed to include lower resistive material than the resistance of an electrode and a wiring that is required to reduce the resistance.

Abstract translation: 本发明的一个目的是降低诸如透明电极或布线的电极的实质电阻，此外，提供一种可以向发光元件施加相同电压的显示装置。 在本发明中，形成在电极，布线，信号线，扫描线或电源线等半导体元件的导电膜的一层中形成的辅助布线连接到以 第二电极和布线。 优选地，辅助布线形成为包括低电阻材料的导电膜，特别地，形成为包括比电阻的阻抗更低的电阻材料和降低电阻所需的布线。

公开(公告)号：US20140264391A1

公开(公告)日：2014-09-18

申请号：US14294301

申请日：2014-06-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Hideomi Suzawa ,  Koji Ono ,  Tatsuya Arao

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L27/1222 ,  G02F1/13454 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78621 ,  H01L2029/7863

Abstract: A high reliability semiconductor display device is provided. A semiconductor layer in the semiconductor display device has a channel forming region, an LDD region, a source region, and a drain region, and the LDD region overlaps a first gate electrode, sandwiching a gate insulating film.

Abstract translation: 提供了一种高可靠性的半导体显示装置。 半导体显示装置中的半导体层具有沟道形成区域，LDD区域，源极区域和漏极区域，并且LDD区域与第一栅极电极重叠，夹着栅极绝缘膜。

公开(公告)号：US20200035708A1

公开(公告)日：2020-01-30

申请号：US16533915

申请日：2019-08-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Noriko Miyagi ,  Masayuki Sakakura ,  Tatsuya Arao ,  Ritsuko Nagao ,  Yoshifumi Tanada

IPC: H01L27/12 ,  G09G3/3233 ,  H01L27/32 ,  H01L51/52 ,  G02F1/1333

Abstract: An object of the present invention is to decrease substantial resistance of art electrode such as a transparent electrode or a wiring, and furthermore, to provide a display device for which is possible to apply same voltage to light-emitting elements. In the invention, a auxiliary wiring that is formed in one layer in which a conductive, film of a semiconductor element such as an electrode, wiring, a signal line, a scanning line, or a power supply line is connected to an electrode typified by a second electrode, and a wiring. It is preferable that the auxiliary wiring is formed into a conductive film to include low resistive material, especially, formed to include lower resistive, material than the resistance of an electrode and a wiring that is required to reduce the resistance.

公开(公告)号：US10515983B2

公开(公告)日：2019-12-24

申请号：US16515117

申请日：2019-07-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Atsuo Isobe ,  Shunpei Yamazaki ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Mai Akiba

IPC: H01L27/12 ,  H01L21/02 ,  H01L29/786 ,  H01L21/84 ,  B23K26/073 ,  H01L21/20 ,  H01L29/66 ,  H01L21/3213

Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

公开(公告)号：US09911801B2

公开(公告)日：2018-03-06

申请号：US15614663

申请日：2017-06-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Tatsuya Arao ,  Munehiro Azami

IPC: H01L27/32 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L27/3265 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/78633

Abstract: A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.