公开(公告)号：US09882165B2

公开(公告)日：2018-01-30

申请号：US15344036

申请日：2016-11-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Koichiro Tanaka ,  Masaaki Hiroki ,  Hisao Ikeda ,  Kengo Akimoto

IPC: H01L51/52 ,  H01L51/50

CPC classification number: H01L51/5246 ,  H01L51/50 ,  H01L51/5212 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/525 ,  H01L51/5253 ,  H01L51/5256 ,  H01L51/5259 ,  H01L51/5275 ,  H01L2251/50 ,  H01L2251/53 ,  H01L2251/5307 ,  H01L2251/5323 ,  H01L2251/5338 ,  H01L2251/5361

Abstract: A highly reliable light-emitting device which includes an organic EL element and is lightweight is provided. The light-emitting device includes a first organic resin layer; a first glass layer over the first organic resin layer; a light-emitting element over the first glass layer; a second glass layer over the light-emitting element; and a second organic resin layer over the second glass layer. The first organic resin layer and the first glass layer each have a property of transmitting visible light. The thickness of the first glass layer and the thickness of the second glass layer are independently greater than or equal to 25 μm and less than or equal to 100 μm. The light-emitting element includes a first electrode having a property of transmitting visible light, a layer containing a light-emitting organic compound, and a second electrode stacked in this order from the first glass layer side.

公开(公告)号：US10366885B2

公开(公告)日：2019-07-30

申请号：US15350777

申请日：2016-11-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Koichiro Tanaka ,  Hidekazu Miyairi ,  Aiko Shiga ,  Akihisa Shimomura ,  Atsuo Isobe

IPC: H01L21/02 ,  H01L21/283 ,  B23K26/352 ,  B23K26/06 ,  B23K26/073 ,  H01L27/12 ,  H01L21/268 ,  B23K101/40 ,  H01L27/146

Abstract: The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.

公开(公告)号：US10361222B2

公开(公告)日：2019-07-23

申请号：US15897318

申请日：2018-02-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Atsuo Isobe ,  Shunpei Yamazaki ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Mai Akiba

IPC: H04L27/12 ,  H01L27/12 ,  H01L21/3213 ,  H01L21/02 ,  B23K26/073 ,  H01L21/20 ,  H01L21/84 ,  H01L29/66 ,  H01L29/786

Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formulation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

公开(公告)号：US09564323B2

公开(公告)日：2017-02-07

申请号：US14248425

申请日：2014-04-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Koichiro Tanaka ,  Tomoaki Moriwaka

IPC: G02B27/09 ,  H01L21/268 ,  B23K26/06 ,  B23K26/064 ,  H01L21/02 ,  B23K26/073 ,  H01L33/08 ,  H01L21/28 ,  H01L21/20 ,  H01L27/32 ,  H01L51/52 ,  H01S3/00 ,  H01S5/40 ,  H01L27/12

CPC classification number: G02B27/0955 ,  B23K26/06 ,  B23K26/0604 ,  B23K26/064 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  G02B27/09 ,  G02B27/095 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/28017 ,  H01L27/1285 ,  H01L27/3244 ,  H01L27/3295 ,  H01L33/08 ,  H01L51/5237 ,  H01L51/5246 ,  H01S3/005 ,  H01S5/4012 ,  H01S5/4025

Abstract: If an optical path length of an optical system is reduced and a length of a laser light on an irradiation surface is increased, there occurs curvature of field which is a phenomenon that a convergent position deviates depending on an incident angle or incident position of a laser light with respect to a lens. To avoid this phenomenon, an optical element having a negative power such as a concave lens or a concave cylindrical lens is inserted to regulate the optical path length of the laser light and a convergent position is made coincident with a irradiation surface to form an image on the irradiation surface.

Abstract translation: 如果光学系统的光路长度减小并且照射表面上的激光长度增加，则会产生作为会聚位置根据激光的入射角或入射位置而偏离的现象的曲率 相对于镜头的光。 为了避免这种现象，插入具有负功率的光学元件，例如凹透镜或凹柱面透镜，以调节激光的光路长度，并且使会聚位置与照射表面一致以形成图像 照射面。

公开(公告)号：US08993421B2

公开(公告)日：2015-03-31

申请号：US14021439

申请日：2013-09-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Koichiro Tanaka ,  Tomoaki Moriwaka

IPC: H01L21/02 ,  B23K26/06 ,  B23K26/067 ,  B23K26/073 ,  H01L27/12

CPC classification number: H01L21/02592 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/067 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  H01L27/1285

Abstract: In the present invention, each laser light emitted from a plurality of lasers is divided, and laser light including at least one laser light that is emitted from a different laser and that has different energy distribution is synthesized with another such laser light, or laser light including at least one laser light that has different energy distribution is synthesized with another such laser light through a convex lens that is set at an angle to the direction each laser light travels, to form laser light having excellent uniformity in energy distribution.

公开(公告)号：US10369658B2

公开(公告)日：2019-08-06

申请号：US15202022

申请日：2016-07-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Koichiro Tanaka ,  Hirotada Oishi

IPC: G02B27/10 ,  B23K26/06 ,  B23K15/00 ,  B23K15/10 ,  B23K26/073 ,  G02B27/09 ,  G02B3/00 ,  B23K103/00

Abstract: The present invention is to provide a laser irradiation technique for irradiating the irradiation surface with the laser beam having homogeneous intensity distribution using a cylindrical lens array without being affected by the intensity distribution of the original beam. A laser beam emitted from a laser oscillator is divided by two kinds of cylindrical lens arrays into a plurality of beams, which are two kinds of linear laser beams with their energy intensity distribution inverted each other, and the two kinds of linear laser beams are superposed in a minor-axis direction. This can form the linear laser beam having homogeneous intensity distribution on the irradiation surface.

公开(公告)号：US08722521B2

公开(公告)日：2014-05-13

申请号：US13962984

申请日：2013-08-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Koichiro Tanaka ,  Tomoaki Moriwaka

IPC: H01L21/268

CPC classification number: G02B27/0955 ,  B23K26/06 ,  B23K26/0604 ,  B23K26/064 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  G02B27/09 ,  G02B27/095 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/28017 ,  H01L27/1285 ,  H01L27/3244 ,  H01L27/3295 ,  H01L33/08 ,  H01L51/5237 ,  H01L51/5246 ,  H01S3/005 ,  H01S5/4012 ,  H01S5/4025

Abstract: If an optical path length of an optical system is reduced and a length of a laser light on an irradiation surface is increased, there occurs curvature of field which is a phenomenon that a convergent position deviates depending on an incident angle or incident position of a laser light with respect to a lens. To avoid this phenomenon, an optical element having a negative power such as a concave lens or a concave cylindrical lens is inserted to regulate the optical path length of the laser light and a convergent position is made coincident with a irradiation surface to form an image on the irradiation surface.

Abstract translation: 如果光学系统的光路长度减小并且照射表面上的激光长度增加，则会产生作为会聚位置根据激光的入射角或入射位置而偏离的现象的曲率 相对于镜头的光。 为了避免这种现象，插入具有负功率的光学元件，例如凹透镜或凹柱面透镜，以调节激光的光路长度，并且使会聚位置与照射表面一致以形成图像 照射面。

公开(公告)号：US10910219B2

公开(公告)日：2021-02-02

申请号：US16522930

申请日：2019-07-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Koichiro Tanaka ,  Hidekazu Miyairi ,  Aiko Shiga ,  Akihisa Shimomura ,  Atsuo Isobe

IPC: H01L21/02 ,  H01L21/283 ,  B23K26/352 ,  B23K26/06 ,  B23K26/073 ,  H01L27/12 ,  H01L21/268 ,  B23K101/40 ,  H01L27/146

Abstract: The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.

公开(公告)号：US10515983B2

公开(公告)日：2019-12-24

申请号：US16515117

申请日：2019-07-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Atsuo Isobe ,  Shunpei Yamazaki ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Mai Akiba

IPC: H01L27/12 ,  H01L21/02 ,  H01L29/786 ,  H01L21/84 ,  B23K26/073 ,  H01L21/20 ,  H01L29/66 ,  H01L21/3213

Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

公开(公告)号：US09910285B2

公开(公告)日：2018-03-06

申请号：US15424316

申请日：2017-02-03

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Koichiro Tanaka ,  Tomoaki Moriwaka

IPC: B23K26/00 ,  C30B30/00 ,  H01L21/30 ,  G02B27/09 ,  H01L21/268 ,  H01S3/00

CPC classification number: G02B27/0955 ,  B23K26/06 ,  B23K26/0604 ,  B23K26/064 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  G02B27/09 ,  G02B27/095 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/28017 ,  H01L27/1285 ,  H01L27/3244 ,  H01L27/3295 ,  H01L33/08 ,  H01L51/5237 ,  H01L51/5246 ,  H01S3/005 ,  H01S5/4012 ,  H01S5/4025

Abstract: If an optical path length of an optical system is reduced and a length of a laser light on an irradiation surface is increased, there occurs curvature of field which is a phenomenon that a convergent position deviates depending on an incident angle or incident position of a laser light with respect to a lens. To avoid this phenomenon, an optical element having a negative power such as a concave lens or a concave cylindrical lens is inserted to regulate the optical path length of the laser light and a convergent position is made coincident with a irradiation surface to form an image on the irradiation surface.