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公开(公告)号：US20200224331A1
公开(公告)日：2020-07-16
申请号：US16736274
申请日：2020-01-07
Applicant: SLT Technologies, Inc
Inventor： Mark P. D'EVELYN , Derrick S. KAMBER
Abstract: A method for forming a laterally-grown group III metal nitride crystal includes providing a substrate, the substrate including one of sapphire, silicon carbide, gallium arsenide, silicon, germanium, a silicon-germanium alloy, MgAl2O4 spinel, ZnO, ZrB2, BP, InP, AlON, ScAlMgO4, YFeZnO4, MgO, Fe2NiO4, LiGa5O8, Na2MoO4, Na2WO4, In2CdO4, lithium aluminate (LiAlO2), LiGaO2, Ca8La2(PO4)6O2, gallium nitride, or aluminum nitride (AlN), forming a pattern on the substrate, the pattern comprising growth centers having a minimum dimension between 1 micrometer and 100 micrometers, and being characterized by at least one pitch dimension between 20 micrometers and 5 millimeters, growing a group III metal nitride from the pattern of growth centers vertically and laterally, and removing the laterally-grown group III metal nitride layer from the substrate. A laterally-grown group III metal nitride layer coalesces, leaving an air gap between the laterally-grown group III metal nitride layer and the substrate or a mask thereupon.
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公开(公告)号：US20240247406A1
公开(公告)日：2024-07-25
申请号：US18418141
申请日：2024-01-19
Applicant: SLT Technologies, Inc.
Inventor： Drew W. CARDWELL , Dirk EHRENTRAUT , Mark P. D'EVELYN , Rajeev Tirumala PAKALAPATI
CPC classification number: C30B29/403 , C30B7/105
Abstract: Embodiments of the disclosure include a free-standing crystal, comprising a group III metal and nitrogen. The free-standing crystal may comprise: a wurtzite crystal structure; a growth direction, the growth direction being selected from one of [0 0 0 ±1], {1 0 −1 0}, {1 0 −1 ±1}, or {1 0 −1 ±2}. A first surface having a dislocation density between 1 cm−2 and 107 cm−2, the dislocations having an orientation within 30 degrees of the growth direction, and an average impurity concentration of H greater than 1017 cm−3. The free-standing crystal having at least four sets of bands, wherein each set of bands includes a first sub-band and a second sub-band, the first sub-band having a concentration of at least one impurity selected from H, O, Li, Na, K, F, Cl, Br, and I; and each of the at least four sets of bands have portions that are substantially parallel.
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公开(公告)号：US20240183074A1
公开(公告)日：2024-06-06
申请号：US18440646
申请日：2024-02-13
Applicant: SLT Technologies, Inc.
Inventor： Wenkan JIANG , Dirk EHRENTRAUT , Mark P. D'EVELYN
CPC classification number: C30B29/406 , C01B21/0632 , C30B7/105 , H01L29/2003 , H01L29/30 , C01P2002/30 , C01P2002/74 , C01P2002/80 , C01P2006/80
Abstract: A gallium-containing nitride crystals comprising: a top surface having a crystallographic orientation within 5 degrees of a plane selected from a (0001) +c-plane and a (000-1) −c-plane; a substantially wurtzite structure; n-type electronic properties; an impurity concentration of hydrogen >5×1017 cm−3; an impurity concentration of oxygen between 2×1017 cm−3 and 1×1020 cm−3; an [H]/[O] ratio of at least 0.3; an impurity concentration of at least one of Li, Na, K, Rb, Cs, Ca, F, and Cl >1×1016 cm−3; a compensation ratio between 1.0 and 4.0; an absorbance per unit thickness of at least 0.01 cm−1 at wavenumbers of 3175 cm−1, 3164 cm−1, and 3150 cm−1; and wherein, at wavenumbers between 3200 cm−1 and 3400 cm−1 and between 3075 cm−1 and 3125 cm−1, said gallium-containing nitride crystal is essentially free of infrared absorption peaks having an absorbance per unit thickness >10% of the absorbance per unit thickness at 3175 cm−1.
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24.发明公开公开(公告)号：US20240158951A1
公开(公告)日：2024-05-16
申请号：US18505971
申请日：2023-11-09
Applicant: SLT Technologies, Inc.
Inventor： Paul M. VON DOLLEN , Mark P. D'EVELYN
IPC: C30B7/10
CPC classification number: C30B7/105 , C30B29/403
Abstract: According to the present disclosure, techniques related to processing of materials for growth of crystals are provided. More particularly, the present disclosure provides apparatus and methods for heating of seed crystals suitable for use in conjunction with a high-pressure vessel for crystal growth of a material having a retrograde solubility in a supercritical fluid, including crystal growth of a group III metal nitride crystal by an ammonobasic or ammonoacidic technique, but there can be others. In other embodiments, the present disclosure provides methods suitable for synthesis of crystalline nitride materials, but it would be recognized that other crystals and materials can also be processed. Such crystals and materials include, but are not limited to, GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, among other devices.
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25.发明公开公开(公告)号：US20240158950A1
公开(公告)日：2024-05-16
申请号：US18505963
申请日：2023-11-09
Applicant: SLT Technologies, Inc.
Inventor： Paul M. VON DOLLEN , Drew W. CARDWELL , Mark P. D'EVELYN , Rajeev Tirumala PAKALAPATI
IPC: C30B7/10
CPC classification number: C30B7/105 , C30B29/403
Abstract: According to the present disclosure, techniques related to processing of materials for growth of crystals are provided. More particularly, the present disclosure provides apparatus and methods for heating of seed crystals suitable for use in conjunction with a high-pressure vessel for crystal growth of a material having a retrograde solubility in a supercritical fluid, including crystal growth of a group III metal nitride crystal by an ammonobasic or ammonoacidic technique, but there can be others. In other embodiments, the present disclosure provides methods suitable for synthesis of crystalline nitride materials, but it would be recognized that other crystals and materials can also be processed. Such crystals and materials include, but are not limited to, GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, among other devices.
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Patent Agency Ranking
公开(公告)号：US20240133076A1
公开(公告)日：2024-04-25
申请号：US18542594
申请日：2023-12-16
Applicant: SLT Technologies, Inc.
Inventor： Wenkan JIANG , Dirk EHRENTRAUT , Mark P. D'EVELYN
CPC classification number: C30B29/406 , C01B21/0632 , C30B7/105 , H01L29/2003 , H01L29/30 , C01P2002/30 , C01P2002/74 , C01P2002/80 , C01P2006/80
Abstract: A gallium-containing nitride crystals are disclosed, comprising: a top surface having a crystallographic orientation within about 5 degrees of a plane selected from a (0001) +c-plane and a (000-1) −c-plane; a substantially wurtzite structure; n-type electronic properties; an impurity concentration of hydrogen greater than about 5×1017 cm−3; an impurity concentration of oxygen between about 2×1017 cm−3 and about 1×1020 cm−3; an [H]/[O] ratio of at least 0.3; an impurity concentration of at least one of Li, Na, K, Rb, Cs, Ca, F, and Cl greater than about 1×1016 cm−3; a compensation ratio between about 1.0 and about 4.0; an absorbance per unit thickness of at least 0.01 cm−1 at wavenumbers of approximately 3175 cm−1, 3164 cm−1, and 3150 cm−1; and wherein, at wavenumbers between about 3200 cm−1 and about 3400 cm−1 and between about 3075 cm−1 and about 3125 cm−1, said gallium-containing nitride crystal is essentially free of infrared absorption peaks having an absorbance per unit thickness greater than 10% of the absorbance per unit thickness at 3175 cm.
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公开(公告)号：US20240026563A1
公开(公告)日：2024-01-25
申请号：US18356127
申请日：2023-07-20
Applicant: SLT Technologies, Inc.
Inventor： Mark P. D'EVELYN , Paul M. VON DOLLEN
IPC: C30B7/10
CPC classification number: C30B7/10
Abstract: Embodiments of the disclosure include a crystal growth apparatus, comprising a cylindrical-shaped enclosure, a primary liner disposed within the cylindrical-shaped enclosure, wherein the primary liner comprises a cylindrical wall that extends between a first end and a second end, and an interior surface of the primary liner defines an interior region, at least one load-bearing annular insulating member disposed between the cylindrical-shaped enclosure and the primary liner, a plurality of heating elements disposed between the primary liner and the at least one load-bearing annular insulating member, at least one end closure member disposed proximate to a first end of the cylindrical-shaped enclosure, and a primary liner lid disposed proximate to the first end of the cylindrical wall of the primary liner. The at least one load-bearing annular insulating member comprising at least one of a packed-bed ceramic composition, the packed-bed ceramic composition having a density that is between about 30% and about 98% of a theoretical density of a 100%-dense ceramic having the same composition, or a perforated metal member, comprising a perforated metal foil or a plurality of perforated metal plates, wherein the perforations have a percent open area between about 25% and about 90%, and the perforations have a diameter between about 1 millimeter and about 25 millimeters.
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28.发明公开公开(公告)号：US20230170213A1
公开(公告)日：2023-06-01
申请号：US18072680
申请日：2022-11-30
Applicant: SLT Technologies, Inc.
Inventor： Mark P. D'EVELYN , Keiji FUKUTOMI , Drew W. CARDWELL , David N. ITALIANO
IPC: H01L21/02
CPC classification number: H01L21/02389 , H01L21/02433 , H01L21/02595
Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for substrates with a controlled oxygen gradient using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.
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公开(公告)号：US20220406953A1
公开(公告)日：2022-12-22
申请号：US17893048
申请日：2022-08-22
Applicant: SLT Technologies, Inc.
Inventor： Drew W. CARDWELL , Mark P. D'EVELYN
IPC: H01L31/109 , H01L31/0232 , H01L31/0304 , H01L31/0352 , H01L31/18
Abstract: According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.
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公开(公告)号：US20210249252A1
公开(公告)日：2021-08-12
申请号：US16882219
申请日：2020-05-22
Applicant: SLT Technologies, Inc
Inventor： Wenkan JIANG , Mark P. D'EVELYN , Derrick S. KAMBER , Dirk EHRENTRAUT , Jonathan D. COOK , James WENGER
Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.
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