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    Imaging apparatus and electronic device
    21.
    发明授权
    Imaging apparatus and electronic device 有权

    公开(公告)号：US10546898B2

    公开(公告)日：2020-01-28

    申请号：US16062556

    申请日：2016-12-09

    Applicant: SONY CORPORATION

    Inventor： Yusuke Otake ,  Toshifumi Wakano

    IPC: H01L27/00 ,  H01L27/30 ,  H01L27/28 ,  H01L51/44

    Abstract: This technology relates to an imaging apparatus and an electronic device structured to perform pupil correction appropriately. There are provided a photoelectric conversion film configured to absorb light of a predetermined color component to generate signal charges, a first lower electrode configured to be formed under the photoelectric conversion film, a second lower electrode configured to be connected with the first lower electrode, a via configured to connect the first lower electrode with the second lower electrode, and a photodiode configured to be formed under the second lower electrode and to generate signal charges reflecting the amount of incident light. A first distance between the center of the photodiode and the center of the via at the center of the angle of view is different from a second distance therebetween at an edge of the angle of view. The present technology can be applied to imaging apparatuses.

    Solid-state imaging device, method of manufacturing the same, and electronic apparatus
    24.
    发明授权
    Solid-state imaging device, method of manufacturing the same, and electronic apparatus 有权

    公开(公告)号：US09947703B2

    公开(公告)日：2018-04-17

    申请号：US15113861

    申请日：2015-02-05

    Applicant: SONY CORPORATION

    Inventor： Kenji Azami ,  Yusuke Otake ,  Yuko Ohgishi ,  Toshifumi Wakano ,  Atsushi Toda

    IPC: H01L27/146 ,  H04N5/374 ,  H04N5/353

    CPC classification number: H01L27/14614 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1464 ,  H01L27/14656 ,  H01L27/14687 ,  H04N5/353 ,  H04N5/374 ,  H04N5/3745

    Abstract: The present disclosure relates to a solid-state imaging device that can be made smaller in size, a method of manufacturing the solid-state imaging device, and an electronic apparatus.The solid-state imaging device includes a photoelectric conversion film that performs photoelectric conversion of light emitted from the back surface side of the semiconductor substrate. Also, in each pixel, a charge accumulation layer is formed to be in contact with the photoelectric conversion film on the back surface of the semiconductor substrate, a transfer path unit is formed to extend from the charge accumulation layer to a point near the front surface of the semiconductor substrate, and a memory unit is disposed near the back surface side of the semiconductor substrate, with a charge transfer gate being interposed between the memory unit and the transfer path unit. Then, the photoelectric conversion film is formed by stacking a layer formed with a material having a great light blocking effect on the back surface of the semiconductor substrate. The present technology can be applied to back-illuminated CMOS image sensors in global shutter mode.

    SOLID STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
    26.
    发明申请
    SOLID STATE IMAGING DEVICE AND ELECTRONIC APPARATUS 审中-公开

    公开(公告)号：US20170287957A1

    公开(公告)日：2017-10-05

    申请号：US15626567

    申请日：2017-06-19

    Applicant: Sony Corporation

    Inventor： Toshifumi Wakano ,  Fumihiko Koga

    IPC: H01L27/146 ,  H04N5/374 ,  H04N5/357

    CPC classification number: H01L27/14612 ,  H01L27/14609 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14656 ,  H01L27/14812 ,  H01L27/14887 ,  H04N5/357 ,  H04N5/374 ,  H04N5/378

    Abstract: Provided is a solid state imaging device including: a pixel portion where pixel sharing units are disposed in an array shape and where another one pixel transistor group excluding transfer transistors is shared by a plurality of photoelectric conversion portions; transfer wiring lines which are connected to the transfer gate electrodes of the transfer transistors of the pixel sharing unit and which are disposed to extend in a horizontal direction and to be in parallel in a vertical direction as seen from the top plane; and parallel wiring lines which are disposed to be adjacent to the necessary transfer wiring lines in the pixel sharing unit and which are disposed to be in parallel to the transfer wiring lines as seen from the top plane, wherein voltages which are used to suppress potential change of the transfer gate electrodes are supplied to the parallel wiring lines.

    SOLID-STATE IMAGE SENSOR AND ELECTRONIC DEVICE
    27.
    发明申请
    SOLID-STATE IMAGE SENSOR AND ELECTRONIC DEVICE 审中-公开
    固态图像传感器和电子设备

    公开(公告)号：US20160276391A1

    公开(公告)日：2016-09-22

    申请号：US15170002

    申请日：2016-06-01

    Applicant: Sony Corporation

    Inventor： Toshifumi Wakano

    IPC: H01L27/146 ,  H04N5/3745

    CPC classification number: H01L27/14643 ,  H01L27/14607 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H04N5/37457

    Abstract: There is provided a solid-state image sensor including a semiconductor substrate in which a plurality of pixels are arranged, and a wiring layer stacked on the semiconductor substrate and formed in such a manner that a plurality of conductor layers having a plurality of wirings are buried in an insulation film. In the wiring layer, wirings connected to the pixels are formed of two conductor layers.

    Abstract translation: 提供了一种固态图像传感器，其包括其中布置有多个像素的半导体衬底，以及堆叠在半导体衬底上并以这样的方式形成的布线层，使得具有多个布线的多个导体层被掩埋 在绝缘膜中。 在布线层中，连接到像素的布线由两个导体层形成。

    Solid-state imaging device and electronic apparatus
    30.
    发明授权
    Solid-state imaging device and electronic apparatus 有权

    公开(公告)号：US11411034B2

    公开(公告)日：2022-08-09

    申请号：US16853315

    申请日：2020-04-20

    Applicant: SONY CORPORATION

    Inventor： Nanako Kato ,  Toshifumi Wakano ,  Yusuke Otake

    IPC: H01L27/146 ,  H01L31/107 ,  H01L27/30 ,  H04N5/369

    Abstract: A solid-state imaging device according to the present disclosure includes a photoelectric conversion film that is provided outside a semiconductor substrate on a pixel-by-pixel basis, performs photoelectric conversion on light having a predetermined wavelength range, and transmits light having wavelength ranges other than the predetermined wavelength range, and a photoelectric conversion region that is provided inside the semiconductor substrate on a pixel-by-pixel basis and performs photoelectric conversion on the light having the wavelength ranges, the light having the wavelength ranges having passed through the photoelectric conversion film. The photoelectric conversion film includes a film having an avalanche function.

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