公开(公告)号：US11489001B2

公开(公告)日：2022-11-01

申请号：US16932544

申请日：2020-07-17

Applicant: Sony Corporation

Inventor： Taiichiro Watanabe ,  Akihiro Yamada ,  Hideo Kido ,  Hiromasa Saito ,  Keiji Mabuchi ,  Yuko Ohgishi

IPC: H01L27/148 ,  H01L27/146

Abstract: A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; and plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photoelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.

公开(公告)号：US10192921B2

公开(公告)日：2019-01-29

申请号：US15667556

申请日：2017-08-02

Applicant: Sony Corporation

Inventor： Itaru Oshiyama ,  Takashi Ando ,  Susumu Hiyama ,  Tetsuji Yamaguchi ,  Yuko Ohgishi ,  Harumi Ikeda

IPC: H01L27/146 ,  H01L27/148

Abstract: A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.

公开(公告)号：US08765515B2

公开(公告)日：2014-07-01

申请号：US13655896

申请日：2012-10-19

Applicant: Sony Corporation

Inventor： Yuko Ohgishi

IPC: H01L21/00 ,  H01L31/08

CPC classification number: H04N5/361 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14806 ,  H01L27/14887 ,  H04N5/369 ,  H04N5/378

Abstract: A solid state imaging device including: a plurality of sensor sections formed in a semiconductor substrate in order to convert incident light into an electric signal; a peripheral circuit section formed in the semiconductor substrate so as to be positioned beside the sensor sections; and a layer having negative fixed electric charges that is formed on a light incidence side of the sensor sections in order to form a hole accumulation layer on light receiving surfaces of the sensor sections.

Abstract translation: 一种固态成像装置，包括：形成在半导体衬底中的多个传感器部分，以将入射光转换成电信号; 形成在所述半导体衬底中以便位于所述传感器部分旁边的外围电路部分; 以及在传感器部分的光入射侧形成负固定电荷的层，以便在传感器部分的光接收表面上形成空穴积聚层。

公开(公告)号：US20190123093A1

公开(公告)日：2019-04-25

申请号：US16228244

申请日：2018-12-20

Applicant: Sony Corporation

Inventor： Taiichiro Watanabe ,  Akihiro Yamada ,  Hideo Kido ,  Hiromasa Saito ,  Keiji Mabuchi ,  Yuko Ohgishi

IPC: H01L27/148 ,  H01L27/146

CPC classification number: H01L27/14887 ,  H01L27/14603 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14647 ,  H01L27/14656

Abstract: A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; and plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photoelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.

公开(公告)号：US09105547B2

公开(公告)日：2015-08-11

申请号：US14289213

申请日：2014-05-28

Applicant: Sony Corporation

Inventor： Yuko Ohgishi

IPC: H01L21/00 ,  H01L31/08 ,  H01L27/146 ,  H04N5/369

CPC classification number: H04N5/361 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14806 ,  H01L27/14887 ,  H04N5/369 ,  H04N5/378

Abstract: A solid state imaging device including: a plurality of sensor sections formed in a semiconductor substrate in order to convert incident light into an electric signal; a peripheral circuit section formed in the semiconductor substrate so as to be positioned beside the sensor sections; and a layer having negative fixed electric charges that is formed on a light incidence side of the sensor sections in order to form a hole accumulation layer on light receiving surfaces of the sensor sections.

Abstract translation: 一种固态成像装置，包括：形成在半导体衬底中的多个传感器部分，以将入射光转换成电信号; 形成在所述半导体衬底中以便位于所述传感器部分旁边的外围电路部分; 以及在传感器部分的光入射侧形成负固定电荷的层，以便在传感器部分的光接收表面上形成空穴积聚层。

公开(公告)号：US20150214264A1

公开(公告)日：2015-07-30

申请号：US14570784

申请日：2014-12-15

Applicant: Sony Corporation

Inventor： Itaru Oshiyama ,  Takashi Ando ,  Susumu Hiyama ,  Tetsuji Yamaguchi ,  Yuko Ohgishi ,  Harumi Ikeda

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/1461 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/14818 ,  H01L27/14868

Abstract: A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.

公开(公告)号：US20140264706A1

公开(公告)日：2014-09-18

申请号：US14289213

申请日：2014-05-28

Applicant: Sony Corporation

Inventor： Yuko Ohgishi

IPC: H01L27/146 ,  H04N5/369

CPC classification number: H04N5/361 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14806 ,  H01L27/14887 ,  H04N5/369 ,  H04N5/378

Abstract: A solid state imaging device including: a plurality of sensor sections formed in a semiconductor substrate in order to convert incident light into an electric signal; a peripheral circuit section formed in the semiconductor substrate so as to be positioned beside the sensor sections; and a layer having negative fixed electric charges that is formed on a light incidence side of the sensor sections in order to form a hole accumulation layer on light receiving surfaces of the sensor sections.

Abstract translation: 一种固态成像装置，包括：形成在半导体衬底中的多个传感器部分，以将入射光转换成电信号; 形成在所述半导体衬底中以便位于所述传感器部分旁边的外围电路部分; 以及在传感器部分的光入射侧形成负固定电荷的层，以便在传感器部分的光接收表面上形成空穴积聚层。

公开(公告)号：US10748958B2

公开(公告)日：2020-08-18

申请号：US16228244

申请日：2018-12-20

Applicant: Sony Corporation

Inventor： Taiichiro Watanabe ,  Akihiro Yamada ,  Hideo Kido ,  Hiromasa Saito ,  Keiji Mabuchi ,  Yuko Ohgishi

IPC: H01L27/148 ,  H01L27/146

Abstract: A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; and plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photoelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.

公开(公告)号：US10199427B2

公开(公告)日：2019-02-05

申请号：US14082832

申请日：2013-11-18

Applicant: Sony Corporation

Inventor： Taiichiro Watanabe ,  Akihiro Yamada ,  Hideo Kido ,  Hiromasa Saito ,  Keiji Mabuchi ,  Yuko Ohgishi

IPC: H01L27/148 ,  H01L27/146

Abstract: A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; and plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photoelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.

公开(公告)号：US20170104024A1

公开(公告)日：2017-04-13

申请号：US15299819

申请日：2016-10-21

Applicant: Sony Corporation

Inventor： Tetsuji Yamaguchi ,  Yuko Ohgishi ,  Takashi Ando ,  Harumi Ikeda

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/1461 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/14818 ,  H01L27/14868

Abstract: Realization of an adequate hole accumulation layer and reduction in dark current are allowed to become mutually compatible. A solid-state imaging device 1 having a light-receiving portion 12 to photoelectrically convert incident light is characterized by including a film 21, which is disposed on a light-receiving surface 12s of the above-described light-receiving portion 12 and which lowers an interface state, and a film 22, which is disposed on the above-described film 21 to lower the interface state and which has a negative fixed charge, wherein a hole accumulation layer 23 is disposed on the light-receiving surface 12s side of the light-receiving portion 12.