公开(公告)号：US11075237B2

公开(公告)日：2021-07-27

申请号：US15135749

申请日：2016-04-22

Applicant: Sony Corporation

Inventor： Yorito Sakano

IPC: H01L27/146 ,  H04N5/335 ,  H04N5/3745 ,  H04N5/359

Abstract: There is provided a solid-state image sensor including pixels each at least including light receiving parts receiving light to generate charge, a transfer part transferring the charge accumulated in the light receiving parts, and memory parts holding the charge transferred via the transfer part, and a predetermined number of elements shared by the plurality of pixels, the predetermined number of elements being for outputting a pixel signal at a level corresponding to the charge, wherein one or some of the plurality of pixels is/are a correction pixel(s) outputting a correction pixel signal used for correcting a pixel signal outputted from pixels other than the one or some of the plurality of pixels, and one or some of the predetermined number of elements is/are formed on a wiring layer side of the light receiving parts included in the correction pixel(s).

公开(公告)号：US11050955B2

公开(公告)日：2021-06-29

申请号：US16664225

申请日：2019-10-25

Applicant: SONY CORPORATION

Inventor： Yorito Sakano ,  Isao Hirota ,  Motonobu Torii ,  Masaaki Takizawa ,  Junichiro Azami ,  Motohashi Yuichi ,  Atsushi Suzuki

IPC: H04N5/355 ,  H04N5/3745 ,  H04N5/378 ,  H01L27/146

Abstract: The present technology relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic apparatus, the solid-state imaging device being capable of expanding the dynamic range without deteriorating the image quality. The solid-state imaging device includes a pixel array section having a plurality of unit pixels and a drive section. Each of the unit pixels includes a first photoelectric conversion section, a second photoelectric conversion section which is less sensitive than the first photoelectric conversion section, a charge storage section configured to store charges generated by the second photoelectric conversion section, a charge-voltage conversion section, a first transfer gate section configured to transfer charges from the first photoelectric conversion section, and a second transfer gate section configured to combine the potential of the charge-voltage conversion section with the potential of the charge storage section. The present technology is applicable to solid-state imaging devices, for example.

公开(公告)号：US10515988B2

公开(公告)日：2019-12-24

申请号：US15551129

申请日：2016-02-12

Applicant: SONY CORPORATION

Inventor： Hiroshi Tayanaka ,  Kentaro Akiyama ,  Yorito Sakano ,  Takashi Oinoue ,  Yoshiya Hagimoto ,  Yusuke Matsumura ,  Naoyuki Sato ,  Yuki Miyanami ,  Yoichi Ueda ,  Ryosuke Matsumoto

IPC: H01L27/146 ,  H01L27/14 ,  H04N5/374 ,  H04N5/217 ,  H04N5/235 ,  H04N5/355 ,  H04N5/367 ,  H04N5/378 ,  H04N5/3745 ,  H01L27/02

Abstract: The present technology relates to a solid-state image sensing device and an electronic device capable of reducing noises. The solid-state image sensing device includes a photoelectric conversion unit, a charge holding unit for holding charges transferred from the photoelectric conversion unit, a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit, and a light blocking part including a first light blocking part and a second light blocking part. The first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type.

公开(公告)号：US20150333101A1

公开(公告)日：2015-11-19

申请号：US14812790

申请日：2015-07-29

Applicant: Sony Corporation

Inventor： Yorito Sakano

IPC: H01L27/146 ,  H01L31/108

CPC classification number: H01L27/14649 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/1465 ,  H01L27/14683 ,  H01L31/108 ,  H01L31/1085

Abstract: A solid-state imaging device including a semiconductor layer including a photoelectric conversion section receiving incident light and generating a signal charge; and a light absorbing section for absorbing transmitted light transmitted by the photoelectric conversion section and having a longer wavelength than light absorbed by the photoelectric conversion section, the transmitted light being included in the incident light, the light absorbing section being disposed on a side of another surface of the semiconductor layer on an opposite side from one surface of the semiconductor layer, the incident light being made incident on the one surface of the semiconductor layer.

Abstract translation: 一种固态成像装置，包括：半导体层，包括接收入射光并产生信号电荷的光电转换部; 以及光吸收部，其吸收由所述光电转换部透射的透射光，并且具有比由所述光电转换部吸收的光更长的波长，所述透射光包含在所述入射光中，所述光吸收部配置在所述光吸收部的另一侧 在与半导体层的一个表面相反一侧的半导体层的表面上，入射的光入射到半导体层的一个表面上。

公开(公告)号：US20140242745A1

公开(公告)日：2014-08-28

申请号：US14272335

申请日：2014-05-07

Applicant: Sony Corporation

Inventor： Yorito Sakano ,  Keiji Mabuchi

IPC: H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1464

Abstract: A solid-state imaging device includes a plurality of photoelectric conversion units configured to receive light and generate signal charge, the plurality of photoelectric conversion units being provided in such a manner as to correspond to a plurality of pixels in a pixel area of a semiconductor substrate; and pixel transistors configured to output the signal charge generated by the photoelectric conversion units as electrical signals. Each of the pixel transistors includes at least a transfer transistor that transfers the signal charge generated in the photoelectric conversion unit to a floating diffusion corresponding to a drain. A gate electrode of the transfer transistor is formed in such a manner as to extend with a gate insulating film in between from a channel formed area to a portion where the photoelectric conversion unit has been formed on the surface of the semiconductor substrate.

Abstract translation: 固态成像装置包括多个光电转换单元，被配置为接收光并产生信号电荷，所述多个光电转换单元以与半导体基板的像素区域中的多个像素对应的方式设置 ; 以及被配置为将由光电转换单元生成的信号电荷作为电信号输出的像素晶体管。 每个像素晶体管至少包括传输晶体管，其将在光电转换单元中产生的信号电荷传送到对应于漏极的浮动扩散。 转移晶体管的栅电极以从沟道形成区域到在半导体衬底的表面上形成光电转换单元的部分之间的栅极绝缘膜延伸的方式形成。

公开(公告)号：US08785834B2

公开(公告)日：2014-07-22

申请号：US13961616

申请日：2013-08-07

Applicant: Sony Corporation

Inventor： Yorito Sakano

IPC: H04N5/335 ,  H01L27/148

CPC classification number: H01L27/14601 ,  H01L27/14612 ,  H01L27/14616 ,  H04N5/3559 ,  H04N5/37452

Abstract: There is provided a solid-state image sensor including a plurality of unit pixels each including a photoelectric transducer generating a charge corresponding to an amount of incident light and accumulating the charge therein, a first transfer gate transferring the charge accumulated in the photoelectric transducer, a charge holding region where the charge is held, a second transfer gate transferring the charge, a floating diffusion region where the charge is held to be read out as a signal, a charge discharging gate transferring the charge to a charge discharging part, and a structure including an overflow path formed in a boundary portion between the photoelectric transducer and the charge holding region.

Abstract translation: 提供一种固态图像传感器，其包括多个单位像素，每个单位像素包括产生与入射光量相对应的电荷并在其中积累电荷的光电变换器，转移积累在光电变换器中的电荷的第一传输门， 电荷保持区域，传送电荷的第二传输栅极，保持电荷的浮动扩散区域作为信号被读出，电荷放电栅极将电荷转移到电荷放电部分，以及结构 包括形成在光电变换器和电荷保持区域之间的边界部分中的溢流路径。

公开(公告)号：US20130188079A1

公开(公告)日：2013-07-25

申请号：US13734145

申请日：2013-01-04

Applicant: Sony Corporation

Inventor： Yorito Sakano

IPC: H04N5/335

CPC classification number: H01L27/14612 ,  H01L27/14636 ,  H01L27/14643 ,  H04N5/335 ,  H04N5/359 ,  H04N5/37452 ,  H04N5/37457

Abstract: There is provided a solid-state image sensor including pixels each at least including light receiving parts receiving light to generate charge, a transfer part transferring the charge accumulated in the light receiving parts, and memory parts holding the charge transferred via the transfer part, and a predetermined number of elements shared by the plurality of pixels, the predetermined number of elements being for outputting a pixel signal at a level corresponding to the charge, wherein one or some of the plurality of pixels is/are a correction pixel(s) outputting a correction pixel signal used for correcting a pixel signal outputted from pixels other than the one or some of the plurality of pixels, and one or some of the predetermined number of elements is/are formed on a wiring layer side of the light receiving parts included in the correction pixel(s).

Abstract translation: 提供一种固态图像传感器，其包括各自至少包括接收光的光接收部分以产生电荷的像素，传递累积在光接收部分中的电荷的传送部分和保持经由传送部分传送的电荷的存储部分，以及 预定数量的元件由多个像素共享，预定数量的元件用于以与电荷对应的电平输出像素信号，其中多个像素中的一个或多个是输出的校正像素 用于校正从除了所述多个像素中的一个或多个像素以外的像素输出的像素信号的校正像素信号，以及包括在所述光接收部件的布线层侧上的所述预定数量的元素中的一个或一个 在校正像素中。