Abstract:
Electronics modules and methods of making electronics modules are provided. An electronics module includes a substrate having an electronic circuit mounted thereon, a lens mount affixed to the substrate, the lens mount having a lens assembly mounted therein, and a liquid crystal cell affixed to the lens mount over the lens assembly, the liquid crystal cell having electrical terminals, wherein the lens mount includes adhesive containment pockets that are filled with a conductive adhesive so as to contact the electrical terminals of the liquid crystal cell, wherein the adhesive containment pockets include contacts that are electrically connected to the substrate. In some embodiments, the electronics module is a camera module.
Abstract:
Wafer level proximity sensors are formed by processing a silicon substrate wafer and a silicon cap wafer separately, bonding the cap wafer to the substrate wafer, forming an interconnect structure of through-silicon vias within the substrate, and singulating the bonded wafers to yield individually packaged sensors. The wafer level proximity sensor is smaller than a conventional proximity sensor and can be manufactured using a shorter fabrication process at a lower cost. The proximity sensors are coupled to external components by a signal path that includes the through-silicon vias and a ball grid array formed on a lower surface of the silicon substrate. The design of the wafer level proximity sensor passes more light from the light emitter and more light to the light sensor.
Abstract:
Trenches are opened from a top surface of a production wafer that extend down through scribe areas to a depth that is only partially through a semiconductor substrate. Prior to performing a bumping process, a first handle is attached to the top surface of the production wafer. A back surface of the semiconductor substrate is then thinned to reach the trenches and form a wafer level chip scale package at each integrated circuit location delimited by the trenches. A second handle is then attached to a bottom surface of the thinned semiconductor substrate, and the first handle is removed to expose underbump metallization pads at the top surface. The bumping process is then performed to form a solder ball at each of the exposed underbump metallization pads.
Abstract:
The present disclosure is directed to a package, such as a wafer level chip scale package (WLCSP), with a die coupled to a central portion of a transparent substrate. The transparent substrate includes a central portion having and a peripheral portion surrounding the central portion. The package includes a conductive layer coupled to a contact of the die within the package that extends from the transparent substrate to an active surface of the package. The active surface is utilized to mount the package within an electronic device or to a printed circuit board (PCB) accordingly. The package includes a first insulating layer separating the die from the conductive layer, and a second insulating layer on the conductive layer.
Abstract:
The present disclosure is directed to a wafer level chip scale package (WLCSP) with various combinations of contacts and Under Bump Metallizations (UBMs) having different structures and different amounts solder coupled to the contacts and UBMs. Although the contacts have different structures and the volume of solder differs, the total standoff height along the WLCSP remains substantially the same. Each portion of solder coupled to each respective contact and UBM includes a point furthest away from an active surface of a die of the WLCSP. Each point of each respective portion of solder is co-planar with each other respective point of the other respective portions of solder. Additionally, the contacts with various and different structures are positioned accordingly on the active surface of the die of the WLCSP.
Abstract:
A semiconductor package having a die with a sidewall protected by molding compound, and methods of forming the same are disclosed. The package includes a die with a first surface opposite a second surface and sidewalls extending between the first and second surfaces. A redistribution layer is formed on the first surface of each die. An area of the first surface of the die is greater than an area of the redistribution layer, such that a portion of the first surface of the die is exposed. When molding compound is formed over the die and the redistribution layer to form a semiconductor package, the molding compound is on the first surface of the die between an outer edge of the redistribution layer and an outer edge of the first surface. The molding compound is also on the sidewalls of the die, which provides protection against chipping or cracking during transport.
Abstract:
The present disclosure is directed to a package that includes openings that extend into the package. The openings are filled with a conductive material to electrically couple a first die in the package to a second die in the package. The conductive material that fills the openings forms electrical interconnection bridges between the first die and the second die. The openings in the package may be formed using a laser and a non-doped molding compound, a doped molding compound, or a combination of doped or non-doped molding compounds.
Abstract:
A semiconductor package that is a proximity sensor includes a light transmitting die, a light receiving die, an ambient light sensor, a cap, and a substrate. The light receiving die and the light transmitting die are coupled to the substrate. The cap is coupled to the substrate forming a first chamber around the light transmitting die and a second chamber around the light receiving die. The cap further includes a recess with contact pads. The ambient light sensor is mounted within the recess of the cap and coupled to the contact pads. The cap includes electrical traces that are coupled to the contact pads within the recess coupling the ambient light sensor to the substrate. By utilizing a cap with a recess containing contact pads, a proximity sensor can be formed in a single semiconductor package all while maintaining a compact size and reducing the manufacturing costs of proximity sensors.
Abstract:
A semiconductor package that is a proximity sensor includes a light transmitting die, a light receiving die, an ambient light sensor, a cap, and a substrate. The light receiving die and the light transmitting die are coupled to the substrate. The cap is coupled to the substrate forming a first chamber around the light transmitting die and a second chamber around the light receiving die. The cap further includes a recess with contact pads. The ambient light sensor is mounted within the recess of the cap and coupled to the contact pads. The cap includes electrical traces that are coupled to the contact pads within the recess coupling the ambient light sensor to the substrate. By utilizing a cap with a recess containing contact pads, a proximity sensor can be formed in a single semiconductor package all while maintaining a compact size and reducing the manufacturing costs of proximity sensors.
Abstract:
A semiconductor package includes a lead frame, a die, a discrete electrical component, and electrical connections. The lead frame includes leads and a die pad. Some of the leads include engraved regions that have recesses therein and the die pad may include an engraved region or multiple engraved regions. Each engraved region is formed to contain and confine a conductive adhesive from flowing over the edges of the engraved leads or the die pad. The boundary confines the conductive adhesive to the appropriate location on the engraved lead or the engraved die pad when being placed on the engraved regions. By utilizing a lead frame with engraved regions, the flow of the conductive adhesive or the wettability of the conductive adhesive can be contained and confined to the appropriate areas of the engraved lead or engraved die pad such that a conductive adhesive does not cause cross-talk between electrical components within a semiconductor package or short circuiting within a semiconductor package.