公开(公告)号：US11684273B2

公开(公告)日：2023-06-27

申请号：US15976658

申请日：2018-05-10

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Piero Fallica ,  Sebania Libertino

IPC: A61B5/021 ,  G02F1/21 ,  A61B5/024 ,  A61B5/00 ,  G01J3/26 ,  G01J3/12 ,  G01J1/44

CPC classification number: A61B5/02125 ,  A61B5/02141 ,  A61B5/02433 ,  A61B5/742 ,  G01J3/26 ,  G02F1/21 ,  A61B2562/0238 ,  G01J2001/442 ,  G01J2001/4466 ,  G01J2003/1226 ,  G02F1/213 ,  G02F2203/055 ,  G02F2203/11

Abstract: In various embodiments, the present disclosure provides devices and systems for detecting the blood pressure of a user. In one embodiment, an optoelectronic device includes an array of avalanche photodiodes operating in Geiger mode. A tunable optical filter is optically coupled to the array and receives a light beam reflected from a vascularized tissue of the user, in response to the vascularized tissue being illuminated by an optical source.

公开(公告)号：US11335823B2

公开(公告)日：2022-05-17

申请号：US16370636

申请日：2019-03-29

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Antonello Santangelo ,  Massimo Cataldo Mazzillo ,  Salvatore Cascino ,  Giuseppe Longo ,  Antonella Sciuto

IPC: H01L31/0352 ,  H01L31/107 ,  H01L31/0312 ,  H01L27/146 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/028 ,  H01L27/144

Abstract: The photodetector is formed in a silicon carbide body formed by a first epitaxial layer of an N type and a second epitaxial layer of a P type. The first and second epitaxial layers are arranged on each other and form a body surface including a projecting portion, a sloped lateral portion, and an edge portion. An insulating edge region extends over the sloped lateral portion and the edge portion. An anode region is formed by the second epitaxial layer and is delimited by the projecting portion and by the sloped lateral portion. The first epitaxial layer forms a cathode region underneath the anode region. A buried region of an N type, with a higher doping level than the first epitaxial layer, extends between the anode and cathode regions, underneath the projecting portion, at a distance from the sloped lateral portion as well as from the edge region.

公开(公告)号：US11139411B2

公开(公告)日：2021-10-05

申请号：US16386184

申请日：2019-04-16

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Giovanni Condorelli

IPC: H01L31/107 ,  H01L31/18 ,  G01N21/75 ,  H01L27/146

Abstract: A device for detecting a chemical species, including a Geiger-mode avalanche diode, which includes a body of semiconductor material delimited by a front surface. The semiconductor body includes: a cathode region having a first type of conductivity, which forms the front surface; and an anode region having a second type of conductivity, which extends in the cathode region starting from the front surface. The detection device further includes: a sensitive structure arranged on the anode region and including at least one sensitive region, which has an electrical permittivity that depends upon the concentration of the chemical species; and a resistive region, arranged on the sensitive structure and electrically coupled to the anode region.

公开(公告)号：US10479674B2

公开(公告)日：2019-11-19

申请号：US15639203

申请日：2017-06-30

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Alfio Russo ,  Massimo Cataldo Mazzillo ,  Ferenc Nagy

IPC: G01H9/00 ,  B81C1/00 ,  G01H3/06

Abstract: A MEMS sensor has at least a movable element designed to oscillate at an oscillation frequency, and an integrated measuring system coupled to the movable element to provide a measure of the oscillation frequency. The measuring system has a light source to emit a light beam towards the movable element and a light detector to receive the light beam reflected back from the movable element, including a semiconductor photodiode array. In particular, the light detector is an integrated photomultiplier having an array of single photon avalanche diodes.

公开(公告)号：US09978802B2

公开(公告)日：2018-05-22

申请号：US15346578

申请日：2016-11-08

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Valeria Cinnera Martino

IPC: H01L27/146 ,  H01L31/02 ,  G01N21/25 ,  H01L31/107 ,  H01L31/0224

CPC classification number: H01L27/14645 ,  G01N21/251 ,  H01L27/1443 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/14647 ,  H01L27/14689 ,  H01L31/02027 ,  H01L31/022408 ,  H01L31/107

Abstract: An optoelectronic device for detecting radiation, comprising a semiconductor body including: a cathode region delimited by a front surface, having a first conductivity type and including a bottom layer; an anode region having a second conductivity type, which extends in the cathode region starting from the front surface and forms a surface junction with the cathode region; and a buried region having the second conductivity type, which extends within the cathode region and forms a buried junction with the bottom layer. The cathode region further includes a buffer layer, which is arranged underneath the anode region and overlies, in direct contact, the bottom layer. The buffer layer has a doping level higher than the doping level of the bottom layer.

公开(公告)号：US20170365636A1

公开(公告)日：2017-12-21

申请号：US15346578

申请日：2016-11-08

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Valeria Cinnera Martino

IPC: H01L27/146 ,  H01L31/02 ,  G01N21/25 ,  H01L31/107 ,  H01L31/0224

CPC classification number: H01L27/14645 ,  G01N21/251 ,  H01L27/1443 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/14647 ,  H01L27/14689 ,  H01L31/02027 ,  H01L31/022408 ,  H01L31/107

Abstract: An optoelectronic device for detecting radiation, comprising a semiconductor body including: a cathode region delimited by a front surface, having a first conductivity type and including a bottom layer; an anode region having a second conductivity type, which extends in the cathode region starting from the front surface and forms a surface junction with the cathode region; and a buried region having the second conductivity type, which extends within the cathode region and forms a buried junction with the bottom layer. The cathode region further includes a buffer layer, which is arranged underneath the anode region and overlies, in direct contact, the bottom layer. The buffer layer has a doping level higher than the doping level of the bottom layer.

公开(公告)号：US09411049B2

公开(公告)日：2016-08-09

申请号：US14146175

申请日：2014-01-02

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Alfio Russo ,  Massimo Cataldo Mazzillo

IPC: G06M7/00 ,  G01J1/44 ,  G01C3/08 ,  G01S17/02 ,  G01S17/08

CPC classification number: G01S17/026 ,  G01J1/44 ,  G01S17/08

Abstract: A proximity sensor may include an array of Geiger mode avalanche photodiodes, each including an anode contact and a cathode contact. A common cathode contact may be coupled to the cathode contacts of the array to define a first connection lead at a back side of the array. A common anode collecting grid contact may be coupled to the anode contacts of the array to define a second connection lead of the array. Circuitry may be coupled with the first and second connection leads and configured to sense at least one of a dark current and a rate of current spikes generated in dark conditions, and generate an output signal representing an estimated distance of an object from the array upon the sensing.

Abstract translation: 接近传感器可以包括Geiger模式雪崩光电二极管阵列，每个包括阳极接触和阴极接触。 公共阴极接触件可以耦合到阵列的阴极触点，以在阵列的背面限定第一连接引线。 公共阳极集电栅极触点可以耦合到阵列的阳极触点以限定阵列的第二连接引线。 电路可以与第一和第二连接引线耦合并且被配置为感测暗电流和在黑暗条件下产生的电流尖峰的速率中的至少一个，并且产生表示物体在阵列上的估计距离的输出信号 感应。

公开(公告)号：US20160163906A1

公开(公告)日：2016-06-09

申请号：US15045384

申请日：2016-02-17

Applicant: STMicroelectronics S.r.l.

Inventor： Anna Muscara' ,  Massimo Cataldo Mazzillo

IPC: H01L31/107 ,  H01L27/144 ,  H01L31/0232

CPC classification number: H01L31/107 ,  H01L27/1443 ,  H01L27/1446 ,  H01L31/02327

Abstract: An avalanche photodiode includes a cathode region and an anode region. A lateral insulating region including a barrier region and an insulating region surrounds the anode region. The cathode region forms a planar optical guide within a core of the cathode region, the guide being configured to guide photons generated during avalanche. The barrier region has a thickness extending through the planar optical guide to surround the core and prevent propagation of the photons beyond the barrier region. The core forms an electrical-confinement region for minority carriers generated within the core.

Abstract translation: 雪崩光电二极管包括阴极区域和阳极区域。 包括阻挡区域和绝缘区域的横向绝缘区域围绕阳极区域。 阴极区域在阴极区域的核心内形成平面光导，引导件构造成引导在雪崩期间产生的光子。 阻挡区域具有延伸穿过平面光引导件的厚度以围绕芯部并且防止光子传播超出阻挡区域。 核心形成了在核心内产生的少数载体的电气限制区域。

公开(公告)号：US20140339398A1

公开(公告)日：2014-11-20

申请号：US14270760

申请日：2014-05-06

Applicant: STMicroelectronics S.r.l.

Inventor： Massimo Cataldo Mazzillo ,  Anna Muscara'

IPC: H01L31/107 ,  H01L27/144 ,  H01L31/16

CPC classification number: H01L31/107 ,  H01L27/1443 ,  H01L27/1446 ,  H01L31/02327

Abstract: An avalanche photodiode includes a cathode region and an anode region. A lateral insulating region including a barrier region and an insulating region surrounds the anode region. The cathode region forms a planar optical guide within a core of the cathode region, the guide being configured to guide photons generated during avalanche. The barrier region has a thickness extending through the planar optical guide to surround the core and prevent propagation of the photons beyond the barrier region. The core forms an electrical-confinement region for minority carriers generated within the core.

Abstract translation: 雪崩光电二极管包括阴极区域和阳极区域。 包括阻挡区域和绝缘区域的横向绝缘区域围绕阳极区域。 阴极区域在阴极区域的核心内形成平面光导，引导件被配置为引导在雪崩期间产生的光子。 阻挡区域具有延伸穿过平面光引导件的厚度以围绕芯部并且防止光子传播超出阻挡区域。 核心形成了在核心内产生的少数载体的电气限制区域。

公开(公告)号：US11670732B2

公开(公告)日：2023-06-06

申请号：US17464299

申请日：2021-09-01

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Giovanni Condorelli

IPC: H01L31/107 ,  H01L31/18 ,  G01N21/75 ,  H01L27/146

CPC classification number: H01L31/1075 ,  G01N21/75 ,  H01L27/14643 ,  H01L31/18

Abstract: A device for detecting a chemical species, including a Geiger-mode avalanche diode, which includes a body of semiconductor material delimited by a front surface. The semiconductor body includes: a cathode region having a first type of conductivity, which forms the front surface; and an anode region having a second type of conductivity, which extends in the cathode region starting from the front surface. The detection device further includes: a sensitive structure arranged on the anode region and including at least one sensitive region, which has an electrical permittivity that depends upon the concentration of the chemical species; and a resistive region, arranged on the sensitive structure and electrically coupled to the anode region.