PROCESS FOR FORMING A STACK OF DIFFERENT MATERIALS, AND DEVICE COMPRISING THIS STACK
    22.
    发明申请
    PROCESS FOR FORMING A STACK OF DIFFERENT MATERIALS, AND DEVICE COMPRISING THIS STACK 有权
    形成不同材料的堆叠的方法以及包含该堆叠的装置

    公开(公告)号:US20150091116A1

    公开(公告)日:2015-04-02

    申请号:US14503460

    申请日:2014-10-01

    Abstract: A stack of layers defines a filter and is formed by copper on hydrogenated silicon nitride supported by a carrier. The filter includes a layer of hydrogenated silicon nitride, a layer of silicon oxide on the layer of hydrogenated silicon nitride and a layer of copper on the layer of silicon oxide. The layer of hydrogenated silicon nitride may have, in a vicinity of its upper side, a ratio of a number of silicon atoms per cubic centimeter to a number of nitrogen atoms per cubic centimeter lower than 0.8 (or even lower than 0.6), with a number of silicon-hydrogen bonds smaller than or equal to 6×1021 bonds per cubic centimeter (or even smaller than 0.5×1021 bonds per cubic centimeter). The filter further includes an additional layer of copper between the layer of hydrogenated silicon nitride and the carrier.

    Abstract translation: 一叠层限定了过滤器,并由由载体支撑的氢化氮化硅上的铜形成。 滤波器包括氢化氮化硅层,氢化氮化硅层上的氧化硅层和氧化硅层上的铜层。 氢化氮化硅层可以在其上侧附近具有每立方厘米的硅原子数与每立方厘米低于0.8(或甚至低于0.6)的氮原子数的比率,其中a 硅 - 氢键的数量小于或等于每立方厘米6×1021键(或甚至小于每立方厘米0.5×1021的键)。 滤波器还包括在氢化氮化硅层和载体之间的附加的铜层。

    Process for forming a stack of different materials, and device comprising this stack
    24.
    发明授权
    Process for forming a stack of different materials, and device comprising this stack 有权
    用于形成不同材料的堆叠的方法,以及包括该堆叠的装置

    公开(公告)号:US09397128B2

    公开(公告)日:2016-07-19

    申请号:US14503460

    申请日:2014-10-01

    Abstract: A stack of layers defines a filter and is formed by copper on hydrogenated silicon nitride supported by a carrier. The filter includes a layer of hydrogenated silicon nitride, a layer of silicon oxide on the layer of hydrogenated silicon nitride and a layer of copper on the layer of silicon oxide. The layer of hydrogenated silicon nitride may have, in a vicinity of its upper side, a ratio of a number of silicon atoms per cubic centimeter to a number of nitrogen atoms per cubic centimeter lower than 0.8 (or even lower than 0.6), with a number of silicon-hydrogen bonds smaller than or equal to 6×1021 bonds per cubic centimeter (or even smaller than 0.5×1021 bonds per cubic centimeter). The filter further includes an additional layer of copper between the layer of hydrogenated silicon nitride and the carrier.

    Abstract translation: 一叠层限定了过滤器,并由由载体支撑的氢化氮化硅上的铜形成。 滤波器包括氢化氮化硅层,氢化氮化硅层上的氧化硅层和氧化硅层上的铜层。 氢化氮化硅层可以在其上侧附近具有每立方厘米的硅原子数与每立方厘米低于0.8(或甚至低于0.6)的氮原子数的比率,其中a 硅 - 氢键的数量小于或等于每立方厘米6×1021键(或甚至小于每立方厘米0.5×1021的键)。 滤波器还包括在氢化氮化硅层和载体之间的附加的铜层。

    HIGH QUANTUM EFFICIENCY PHOTODETECTOR
    26.
    发明申请
    HIGH QUANTUM EFFICIENCY PHOTODETECTOR 有权
    高品质效能光电显示器

    公开(公告)号:US20160351745A1

    公开(公告)日:2016-12-01

    申请号:US15163550

    申请日:2016-05-24

    Abstract: A photodetector including a photoelectric conversion structure made of a semiconductor material and, on a light-receiving surface of the conversion structure, a stack of first and second diffractive elements, the second element being above the first element, wherein: the first element includes at least one pad made of a material having an optical index n1, laterally surrounded with a region made of a material having an optical index n2 different from n1; the second element includes at least one pad made of a material having an optical index n3, laterally surrounded with a region made of a material having an optical index n4 different from n3; the pads of the first and second elements are substantially vertically aligned; and optical index differences n1−n2 and n3−n4 have opposite signs.

    Abstract translation: 一种光电检测器,包括由半导体材料制成的光电转换结构,并且在所述转换结构的受光面上具有第一和第二衍射元件的叠层,所述第二元件位于所述第一元件之上,其中:所述第一元件包括在 由具有光学折射率n1的材料制成的至少一个垫片,用由具有不同于n1的光学折射率n2的材料制成的区域横向包围; 第二元件包括由具有光学折射率n3的材料制成的至少一个衬垫,其横向被由具有不同于n3的光学折射率n4的材料制成的区域包围; 第一和第二元件的焊盘基本垂直对齐; 并且光学折射率差n1-n2和n3-n4具有相反的符号。

    METHOD FOR FABRICATING A THICK MULTILAYER OPTICAL FILTER WITHIN AN INTEGRATED CIRCUIT, AND INTEGRATED CIRCUIT COMPRISING A THICK MULTILAYER OPTICAL FILTER
    28.
    发明申请
    METHOD FOR FABRICATING A THICK MULTILAYER OPTICAL FILTER WITHIN AN INTEGRATED CIRCUIT, AND INTEGRATED CIRCUIT COMPRISING A THICK MULTILAYER OPTICAL FILTER 有权
    用于在集成电路中制造厚度多的光学滤波器的方法以及包含厚度多的光学滤波器的集成电路

    公开(公告)号:US20150041943A1

    公开(公告)日:2015-02-12

    申请号:US14452702

    申请日:2014-08-06

    Abstract: A multilayer optical filter is provided for an integrated circuit including a substrate and a metallization layer interconnection part. The optical filter is formed from a first filter part located within the interconnection part and positioned over a photosensitive region of the substrate. The optical filter further includes a second filter part positioned above the first filter part and the interconnection part. The first and second filter parts each include a metal layer. The first and second filter parts are separated from each other as a function of a wavelength in vacuum of an optical signal to be filtered and received by the photosensitive region.

    Abstract translation: 为包括基板和金属化层互连部件的集成电路提供了多层光学滤波器。 滤光器由位于互连部分内的第一过滤器部分形成,并位于衬底的光敏区域上。 光滤波器还包括位于第一滤波器部分和互连部分上方的第二滤波器部分。 第一和第二过滤器部件各自包括金属层。 第一和第二滤光器部分根据要被滤光并由感光区域接收的光信号的真空中的波长彼此分离。

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