DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20240357871A1

    公开(公告)日:2024-10-24

    申请号:US18521142

    申请日:2023-11-28

    摘要: A display device includes anode electrodes spaced apart, a bank structure surrounding the anode electrodes, and including openings, a capping layer on the anode electrode, electrically connected thereto, and having at least a portion spaced apart from the anode electrodes, an inorganic insulating layer on the capping layer within the openings and exposing a portion of an upper surface of the capping layer, light emitting layers each on the capping layer and having a portion contacting a side surface of the bank structure, cathode electrodes on the light emitting layers and having a portion contacting the side surface of the bank structure, and auxiliary common electrodes on the cathode electrodes and having a portion disposed on the bank structure. The bank structure includes first and second bank layers having different material, and the second includes a tip protruding more than the first bank layer.

    DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20240215323A1

    公开(公告)日:2024-06-27

    申请号:US18371370

    申请日:2023-09-21

    摘要: A display device includes a first pixel electrode disposed on a substrate; an inorganic insulating layer disposed on the substrate; a bank structure disposed on the inorganic insulating layer and including a first opening, which overlap with the first pixel electrode; a first light-emitting layer disposed on the first pixel electrode; and a first common electrode disposed on the first light-emitting layer. The bank structure includes a first bank layer, which is disposed directly on the inorganic insulating layer and includes MoTaOx, a second bank layer, which is disposed on the first bank layer and includes MoTaOx, and a third bank layer, which is disposed between the first bank layer and the second bank layer and includes copper (Cu). The second bank layer includes tips, which protrude beyond the third bank layer, on a sidewall of the first opening, and the first and second bank layers include different Ta contents.

    ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND A MANUFACTURING METHOD THEREOF

    公开(公告)号:US20210057504A1

    公开(公告)日:2021-02-25

    申请号:US16894953

    申请日:2020-06-08

    IPC分类号: H01L27/32 H01L51/56 H01L51/52

    摘要: An organic light emitting diode display including: a substrate; a TFT on the substrate; a planarization layer on the TFT; a pixel electrode on the planarization layer, wherein the pixel electrode includes upper and lower layers including a transparent conductive oxide and an intermediate layer including silver; an etch stop layer on the pixel electrode, wherein an upper surface of the pixel electrode is exposed by the etch stop layer; a partition on the etch stop layer, wherein the upper surface of the pixel electrode is exposed by the partition; an organic emission layer on the upper surface of the pixel electrode where the upper surface of the pixel electrode is exposed by the etch stop layer and the partition; and a common electrode on the organic emission layer and the partition, wherein the etch stop layer covers an edge and a side surface of the pixel electrode.

    DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20200264706A1

    公开(公告)日:2020-08-20

    申请号:US16863394

    申请日:2020-04-30

    摘要: An input sensing unit includes a first metal pattern layer including a plurality of first conductive lines extending in a first direction. A first insulating layer is disposed on the first metal pattern layer. A second metal pattern layer is positioned above the first insulating layer and includes a plurality of second conductive lines extending in a second direction intersecting the first direction. A second insulating layer is disposed on the second metal pattern layer. A sensing electrode is disposed on the second insulating layer and is electrically connected to the second metal pattern layer through a contact hole defined in the second insulating layer. An anti-reflection pattern layer is disposed on the first and second metal pattern layers to overlap the first and second metal pattern layers along a direction orthogonal to an upper surface of the anti-reflection pattern layer.

    DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20190004616A1

    公开(公告)日:2019-01-03

    申请号:US15813331

    申请日:2017-11-15

    摘要: An input sensing unit includes a first metal pattern layer including a plurality of first conductive lines extending in a first direction. A first insulating layer is disposed on the first metal pattern layer. A second metal pattern layer is positioned above the first insulating layer and includes a plurality of second conductive lines extending in a second direction intersecting the first direction. A second insulating layer is disposed on the second metal pattern layer. A sensing electrode is disposed on the second insulating layer and is electrically connected to the second metal pattern layer through a contact hole defined in the second insulating layer. An anti-reflection pattern layer is disposed on the first and second metal pattern layers to overlap the first and second metal pattern layers along a direction orthogonal to an upper surface of the anti-reflection pattern layer.

    THIN FILM TRANSISTOR ARRAY PANEL
    30.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL 有权
    薄膜晶体管阵列

    公开(公告)号:US20130320344A1

    公开(公告)日:2013-12-05

    申请号:US13691307

    申请日:2012-11-30

    IPC分类号: H01L29/786

    摘要: A thin film transistor array panel includes: a semiconductor layer disposed on an insulation substrate; a gate electrode overlapping the semiconductor layer; a source electrode and a drain electrode overlapping the semiconductor layer; a first barrier layer disposed between the source electrode and the semiconductor layer; and a second barrier layer disposed between the drain electrode and the semiconductor layer, wherein the first barrier layer and the second barrier layer include nickel-chromium (NiCr).

    摘要翻译: 薄膜晶体管阵列面板包括:设置在绝缘基板上的半导体层; 与半导体层重叠的栅电极; 与该半导体层重叠的源电极和漏电极; 设置在所述源电极和所述半导体层之间的第一阻挡层; 以及设置在所述漏电极和所述半导体层之间的第二阻挡层,其中所述第一阻挡层和所述第二阻挡层包括镍 - 铬(NiCr)。