Thin film transistor panel and method for manufacturing the same
    22.
    发明授权
    Thin film transistor panel and method for manufacturing the same 有权
    薄膜晶体管面板及其制造方法

    公开(公告)号:US09136284B2

    公开(公告)日:2015-09-15

    申请号:US13915070

    申请日:2013-06-11

    CPC classification number: H01L27/124 H01L27/1222 H01L27/1248 H01L27/1259

    Abstract: A thin film transistor array panel according to an exemplary embodiment of the present invention includes: an insulation substrate; a thin film transistor disposed on the insulation substrate, wherein the thin film transistor includes a first electrode; a first contact hole pattern having a first width, wherein the first contact hole pattern exposes a portion of the first electrode, and a first contact hole to expose the portion of the first electrode, wherein an inner sidewall of the first contact hole pattern constitutes a first portion of the first contact hole.

    Abstract translation: 根据本发明的示例性实施例的薄膜晶体管阵列面板包括:绝缘基板; 设置在所述绝缘基板上的薄膜晶体管,其中所述薄膜晶体管包括第一电极; 具有第一宽度的第一接触孔图案,其中所述第一接触孔图案暴露所述第一电极的一部分,以及第一接触孔,以暴露所述第一电极的所述部分,其中所述第一接触孔图案的内侧壁构成 第一接触孔的第一部分。

    DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME
    23.
    发明申请
    DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME 有权
    显示装置及其制造方法

    公开(公告)号:US20150187802A1

    公开(公告)日:2015-07-02

    申请号:US14451251

    申请日:2014-08-04

    Abstract: A display device and method of fabricating the same are disclosed. In one aspect, the display device includes a substrate, a black matrix formed over the substrate, and a transparent electrode formed over the substrate. The black matrix and the transparent electrode have first and second areas, respectively. The sum of the first and second areas is substantially equal to the surface area of the substrate.

    Abstract translation: 公开了一种显示装置及其制造方法。 一方面,显示装置包括基板,形成在基板上的黑矩阵,以及形成在基板上的透明电极。 黑矩阵和透明电极分别具有第一和第二区域。 第一和第二区域的总和基本上等于衬底的表面积。

    Thin film transistor array panel
    24.
    发明授权
    Thin film transistor array panel 有权
    薄膜晶体管阵列面板

    公开(公告)号:US09006742B2

    公开(公告)日:2015-04-14

    申请号:US13952059

    申请日:2013-07-26

    CPC classification number: H01L29/786 H01L27/124 H01L27/1259 H01L29/78645

    Abstract: A manufacturing method of a thin film transistor array panel includes: simultaneously forming a gate conductor and a first electrode on a substrate, using a non-peroxide-based etchant; forming a gate insulating layer on the gate conductor and the first electrode; forming a semiconductor, a source electrode, and a drain electrode on the gate insulating layer; forming a passivation layer on the semiconductor, the source electrode, and the drain electrode; and forming a second electrode layer on the passivation layer.

    Abstract translation: 薄膜晶体管阵列板的制造方法包括:使用非过氧化物的蚀刻剂,在基板上同时形成栅极导体和第一电极; 在所述栅极导体和所述第一电极上形成栅极绝缘层; 在栅极绝缘层上形成半导体,源电极和漏电极; 在半导体,源电极和漏电极上形成钝化层; 以及在所述钝化层上形成第二电极层。

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