公开(公告)号：US20210288258A1

公开(公告)日：2021-09-16

申请号：US17193078

申请日：2021-03-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Masashi TSUJI ,  Takahiro FUJIYAMA ,  Yusaku KONISHI ,  Dae Young CHUNG ,  Fumiaki KATO ,  Jaejun CHANG ,  Keigo FURUTA ,  Takao MOTOYAMA ,  Eun Joo JANG ,  Hyo Sook JANG ,  Tae Ho KIM ,  Tomoyuki KIKUCHI ,  Yuho WON

IPC: H01L51/00 ,  C08G61/12 ,  C09K11/06

Abstract: The present disclosure provides a technique capable of improving durability (particularly luminescence life-span) of an electroluminescence. In order to solve the above problems, the present disclosure provides an arylamine-fluorene alternating copolymer having a structural unit (A) represented by Chemical Formula (1).

公开(公告)号：US20210135139A1

公开(公告)日：2021-05-06

申请号：US17085923

申请日：2020-10-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Heejae LEE ,  Moon Gyu HAN ,  Sung Woo KIM ,  Tae Ho KIM ,  Kun Su PARK ,  Eun Joo JANG ,  Dae Young CHUNG

IPC: H01L51/50

Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other, and a light emitting layer disposed between the first electrode and the second electrode, where the light emitting layer includes a first light emitting layer including a first quantum dot and a second light emitting layer including a second quantum dot and an n-type metal oxide.

公开(公告)号：US20210098728A1

公开(公告)日：2021-04-01

申请号：US17030543

申请日：2020-09-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae Young CHUNG ,  Hwea Yoon KIM ,  Yeonkyung LEE ,  Eun Joo JANG

IPC: H01L51/50

Abstract: An electroluminescent device and a display device including the same. The electroluminescent device includes a first electrode and a second electrode facing each other; a light emitting layer disposed between the first electrode and the second electrode, the light emitting layer including a quantum dot; a hole transport layer disposed between the light emitting layer and the first electrode; and an electron transport layer disposed between the light emitting layer and the second electrode, wherein the hole transport layer, the light emitting layer, or a combination thereof includes thermally activated delayed fluorescence material, and the thermally activated delayed fluorescence material is present in an amount of greater than or equal to about 0.01 wt % and less than about 10 weight percent (wt %), based on 100 wt % of the hole transport layer, the light emitting layer, or the combination thereof including the thermally activated delayed fluorescence material.

公开(公告)号：US20210091325A1

公开(公告)日：2021-03-25

申请号：US17008779

申请日：2020-09-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chan Su KIM ,  Kun Su PARK ,  Tae Ho KIM ,  Eun Joo JANG ,  Dae Young CHUNG

IPC: H01L51/50 ,  H01L51/56 ,  H01L51/00

Abstract: A light emitting device including a first electrode, a second electrode, a quantum dot layer disposed between the first electrode and the second electrode and a first auxiliary layer disposed between the quantum dot layer and the first electrode, wherein the first auxiliary layer includes nickel oxide nanoparticles having an average particle diameter of less than or equal to about 10 nanometers (nm) and an organic ligand, a method of manufacturing the light emitting device, and a display device including the same.

公开(公告)号：US20210040388A1

公开(公告)日：2021-02-11

申请号：US17083470

申请日：2020-10-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho WON ,  Ha Il KWON ,  Eun Joo JANG ,  Jaejun CHANG ,  Dae Young CHUNG

IPC: C09K11/88 ,  C09K11/08 ,  H01L51/50

Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other, and an emissive layer disposed between the first electrode and the second electrode and including the quantum dots. The quantum dots include a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dots do not include cadmium. The electroluminescent device has an external quantum efficiency of greater than or equal to about 9% and a maximum brightness of greater than or equal to about 10,000 candelas per square meter (cd/m2).

公开(公告)号：US20200328368A1

公开(公告)日：2020-10-15

申请号：US16913575

申请日：2020-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae Young CHUNG ,  Hongkyu SEO ,  Yeonkyung LEE ,  Eun Joo JANG

IPC: H01L51/50 ,  H01L51/52

Abstract: An electronic device includes a first electrode and a second electrode facing each other, an emission layer comprising a plurality of quantum dots, wherein the emission layer is disposed between the first electrode and the second electrode; a first charge auxiliary layer disposed between the first electrode and the emission layer; and an optical functional layer disposed on the second electrode on a side opposite the emission layer, wherein the first electrode includes a reflecting electrode, wherein the second electrode is a light-transmitting electrode, wherein a region between the optical functional layer and the first electrode comprises a microcavity structure, and a refractive index of the optical functional layer is greater than or equal to a refractive index of the second electrode.

公开(公告)号：US20190048259A1

公开(公告)日：2019-02-14

申请号：US16103182

申请日：2018-08-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hyung KIM ,  Hyun A KANG ,  Eun Joo JANG ,  Dae Young CHUNG

IPC: C09K11/70 ,  H01L51/50

Abstract: Disclosed are a semiconductor nanocrystal particle including indium (In), zinc (Zn), and phosphorus (P), wherein a mole ratio of the zinc relative to the indium is greater than or equal to about 25:1, and the semiconductor nanocrystal particle includes a core including a first semiconductor material including indium, zinc, and phosphorus and a shell disposed on the core and including a second semiconductor material including zinc and sulfur, a method of producing the same, and an electronic device including the same. The semiconductor nanocrystal particle emits blue light having a maximum peak emission at a wavelength of less than or equal to about 470 nanometers.

公开(公告)号：US20180039103A1

公开(公告)日：2018-02-08

申请号：US15671369

申请日：2017-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Joo JANG ,  Chil Hee CHUNG ,  Tae Hyung KIM ,  Jihyun MIN ,  Hyo Sook JANG ,  Dae Young CHUNG

IPC: G02F1/017 ,  H01L51/50

CPC classification number: G02F1/01716 ,  B82Y20/00 ,  C09K11/00 ,  C09K11/70 ,  G02F1/01725 ,  G02F1/3556 ,  G02F2/02 ,  G02F2001/01791 ,  H01L27/283 ,  H01L27/3225 ,  H01L51/502 ,  H01L51/5296 ,  H05B33/14

Abstract: An electronic device includes: an anode and a cathode facing each other; a quantum dot emission layer disposed between the anode and the cathode and including a plurality of quantum dots; and a light emitting source, wherein the quantum dot emission layer is configured to receive electrical energy from the anode and the cathode and to emit light having a first wavelength, wherein the quantum dot emission layer and the light emitting source are configured so that the light emitting source provides the quantum emission layer with light having a second wavelength, and the plurality of quantum dots are excited by the light having the second wavelength and emit light having a third wavelength, wherein the anode, the cathode, or a combination thereof is a light transmitting electrode, and the light of the first wavelength and the light of the third wavelength are emitted through the light transmitting electrode.

公开(公告)号：US20230345753A1

公开(公告)日：2023-10-26

申请号：US18304714

申请日：2023-04-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Moon Gyu HAN ,  Dae Young CHUNG ,  Taehyung KIM ,  Heejae LEE

IPC: H10K50/13 ,  H10K50/16 ,  H10K71/15

CPC classification number: H10K50/13 ,  H10K50/16 ,  H10K71/15 ,  H10K2102/351

Abstract: An electroluminescent device including a light emitting layer disposed between a first electrode and a second electrode, and an electron transport layer disposed between the multi-layered light emitting film and the second electrode, where the multi-layered light emitting film includes a first layer and a second layer disposed on the first layer, the first layer including a plurality of first semiconductor nanoparticles surrounded by a p-type organic semiconductor polymer, and the second layer including a plurality of second semiconductor nanoparticles

公开(公告)号：US20230118092A1

公开(公告)日：2023-04-20

申请号：US18076495

申请日：2022-12-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chan Su KIM ,  Kun Su PARK ,  Tae Ho KIM ,  Eun Joo JANG ,  Dae Young CHUNG

IPC: H01L51/50 ,  H01L51/00 ,  H01L51/56

Abstract: A light emitting device including a first electrode, a second electrode, a quantum dot layer disposed between the first electrode and the second electrode and a first auxiliary layer disposed between the quantum dot layer and the first electrode, wherein the first auxiliary layer includes nickel oxide nanoparticles having an average particle diameter of less than or equal to about 10 nanometers (nm) and an organic ligand, a method of manufacturing the light emitting device, and a display device including the same.