METHODS OF FORMING SEMICONDUCTOR FILMS AND METHODS OF MANUFACTURING TRANSISTORS INCLUDING SEMICONDUCTOR FILMS
    4.
    发明申请
    METHODS OF FORMING SEMICONDUCTOR FILMS AND METHODS OF MANUFACTURING TRANSISTORS INCLUDING SEMICONDUCTOR FILMS 有权
    形成半导体膜的方法和制造半导体膜的晶体管的方法

    公开(公告)号:US20150064860A1

    公开(公告)日:2015-03-05

    申请号:US14293187

    申请日:2014-06-02

    IPC分类号: H01L21/02 H01L29/66

    摘要: Provided are semiconductor films, methods of forming the same, transistors including the semiconductor films, and methods of manufacturing the transistors. Provided are a semiconductor film including zinc (Zn), nitrogen (N), oxygen (O), and fluorine (F), and a method of forming the semiconductor film. Provided are a semiconductor film including zinc, nitrogen, and fluorine, and a method of forming the semiconductor film. Sputtering, ion implantation, plasma treatment, chemical vapor deposition (CVD), or a solution process may be used in order to form the semiconductor films. The sputtering may be performed by using a zinc target and a reactive gas including fluorine. The reactive gas may include nitrogen and fluorine, or nitrogen, oxygen, and fluorine.

    摘要翻译: 提供半导体膜,其形成方法,包括半导体膜的晶体管以及制造晶体管的方法。 提供了包括锌(Zn),氮(N),氧(O)和氟(F))的半导体膜以及形成半导体膜的方法。 提供了包括锌,氮和氟的半导体膜,以及形成半导体膜的方法。 可以使用溅射,离子注入,等离子体处理,化学气相沉积(CVD)或溶液工艺来形成半导体膜。 可以通过使用锌靶和包括氟的反应性气体来进行溅射。 反应性气体可以包括氮和氟,或氮,氧和氟。