公开(公告)号：US10032886B2

公开(公告)日：2018-07-24

申请号：US15170230

申请日：2016-06-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-Yup Chung ,  Hyun-Jo Kim ,  Seong-Yul Park ,  Se-Wan Park ,  Jong-Mil Youn ,  Jeong-Hyo Lee ,  Hwa-Sung Rhee ,  Hee-Don Jeong ,  Ji-Yong Ha

IPC: H01L21/02 ,  H01L29/66 ,  H01L27/092 ,  H01L29/08 ,  H01L29/78 ,  H01L21/762 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/165

Abstract: A semiconductor device includes a fin-type pattern including a first short side and a second short side opposed to each other, a first trench in contact with the first short side, a second trench in contact with the second short side, a first field insulating film in the first trench, the first field insulating film including a first portion and a second portion arranged sequentially from the first short side, and a height of the first portion being different from a height of the second portion, a second field insulating film in the second trench, and a first dummy gate on the first portion of the first field insulating film.

公开(公告)号：US09461173B2

公开(公告)日：2016-10-04

申请号：US14964830

申请日：2015-12-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-Youn Kim ,  Hyung-Soon Jang ,  Jong-Mil Youn ,  Tae-Won Ha

IPC: H01L29/78 ,  H01L29/423 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/49 ,  H01L29/51 ,  H01L29/06 ,  H01L29/161 ,  H01L29/20 ,  H01L29/165

CPC classification number: H01L29/7848 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823842 ,  H01L21/823871 ,  H01L27/0207 ,  H01L27/092 ,  H01L27/0922 ,  H01L27/0924 ,  H01L29/0642 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/161 ,  H01L29/165 ,  H01L29/20 ,  H01L29/42364 ,  H01L29/42372 ,  H01L29/42376 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/4983 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517

Abstract: A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.

Abstract translation: 半导体器件包括：衬底，包括第一有源区，第二有源区和第一有源区和第二有源区之间的场区;以及栅极结构，形成在衬底上以跨过第一有源区，第二有源区和场 地区。 栅极结构包括彼此直接接触的p型金属栅电极和n型金属栅极电极，p型金属栅极电极从第一有源区域延伸到第二有源区域的一半以下。