公开(公告)号：US20200064276A1

公开(公告)日：2020-02-27

申请号：US16285548

申请日：2019-02-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MYUNG-JUN LEE ,  Ken Ozawa ,  Wook-rae Kim ,  Gwang-Sik Park ,  Ji-hoon Kang ,  Kwang-Soo Kim

IPC: G01N21/95 ,  G06T5/50 ,  G06T7/00 ,  H04N5/372 ,  H01L21/67 ,  H01L21/66

Abstract: Systems and methods related to a structured illumination (SI)-based inspection apparatus are described. The SI-based inspection apparatus may be capable of accurately inspecting an inspection object in real time with high resolution, while reducing the loss of light. Also described are an inspection method, and a semiconductor device fabrication method including the SI-based inspection method. The inspection apparatus may include a light source configured to generate and output a light beam, a phase shifting grating (PSG) configured to convert the light beam from the light source into the SI, a beam splitter configured to cause the SI to be incident on an inspection object and output a reflected beam from the inspection object, a stage capable of moving the inspection object and on which the inspection object is arranged, and a time-delayed integration (TDI) camera configured to capture images of the inspection object by detecting the reflected beam.

公开(公告)号：US10332611B2

公开(公告)日：2019-06-25

申请号：US15726002

申请日：2017-10-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwang-Soo Kim ,  Heonkyu Lee

IPC: G11C5/02 ,  H01L27/115 ,  G11C29/00 ,  G11C11/34 ,  G11C29/12 ,  G11C29/48 ,  G11C7/18

Abstract: A three-dimensional semiconductor memory device including a substrate including a first connection region, a second connection region, and a cell array region disposed between the first and second connection regions. The memory device further includes an electrode structure including a plurality of electrodes vertically stacked on the substrate, wherein each of the electrodes has a pad exposed on the first connection region, and a dummy electrode structure disposed adjacent to the electrode structure and including a plurality of dummy electrodes vertically stacked on the substrate. Each dummy electrode has a dummy pad exposed on the second connection region. The electrode structure includes a first stair structure and a second stair structure which each includes the pads of the electrodes exposed on the first connection region. The first stair structure extends along a first direction, and the second stair structure extends along a second direction that crosses the first direction.

公开(公告)号：US10241723B2

公开(公告)日：2019-03-26

申请号：US15652811

申请日：2017-07-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： In-Jae Lee ,  Kwang-Soo Kim ,  Hyong-Woo Yu

IPC: G11C5/14 ,  G06F3/06 ,  G06K19/077 ,  G11C16/30 ,  G06F13/16 ,  G06K19/07 ,  G11C7/10 ,  G11C7/22

Abstract: A memory card includes first and second groups of terminals, at least one controller, and first and second nonvolatile memories. The first group of terminals are adjacent to an edge at an insertion side of a substrate and include a first power terminal to provide a first voltage. The second group of terminals is spaced farther apart from the edge at the insertion side than the first group of terminals and includes a second power terminal to provide a second voltage. The at least one memory controller is connected to the first and second groups of terminals, and the first and second nonvolatile memories are independently connected to the at least one controller. The at least one controller simultaneously accesses the first nonvolatile memory and the second nonvolatile memory when the first group of terminals and the second group of terminals are connected to an external host.

公开(公告)号：US09425036B2

公开(公告)日：2016-08-23

申请号：US14151166

申请日：2014-01-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wook-Rae Kim ,  Hashimoto Kohei ,  Won-Don Joo ,  Kwang-Soo Kim ,  Byeong-Hwan Jeon ,  Sue-Jin Cho

IPC: H01J61/02

CPC classification number: H01J61/025 ,  G03F7/70016 ,  G03F7/70175 ,  H01J61/545 ,  H01J61/86 ,  H01J65/042

Abstract: Provided are a light source device and a semiconductor manufacturing apparatus including the same. The light source device includes a light-emitting lamp. The light source device includes a laser generator configured to generate and direct a laser beam to the light-emitting lamp. The light source device includes a recycling optical element configured to redirect the laser beam to the light-emitting lamp. The recycling optical element includes a first recycling optical modulator configured to change the phase of the laser beam.

Abstract translation: 提供一种光源装置和包括该光源装置的半导体制造装置。 光源装置包括发光灯。 光源装置包括：激光发生器，被配置为产生并将激光束定向到发光灯。 光源装置包括被配置为将激光束重定向到发光灯的再循环光学元件。 回收光学元件包括被配置为改变激光束的相位的第一再循环光学调制器。