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公开(公告)号：US20250118371A1
公开(公告)日：2025-04-10
申请号：US18666874
申请日：2024-05-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sewoong Lee , Kwangjin Lee , Kirock Kwon , Kyungduk Lee , Sangsoo Cha , Younsoo Cheon
Abstract: Provided is a storage device including a memory device including a plurality of memory blocks each including a plurality of memory cells, a controller configured to control a program operation of the memory device in response to a write request received from a host, and a temperature sensor configured to measure an internal temperature, wherein the controller is further configured to, based on a first temperature measured by the temperature sensor, activate one of the plurality of memory blocks as a risk block and then control a high-reliability program operation using the risk block, or activate one of the plurality of memory blocks as a first normal block and then control a normal program operation using the first normal block.
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公开(公告)号：US20240231698A1
公开(公告)日：2024-07-11
申请号：US18485395
申请日：2023-10-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Byungsue Jung , Kyungduk Lee , Jaeik Lee
IPC: G06F3/06
CPC classification number: G06F3/0659 , G06F3/0607 , G06F3/0679
Abstract: A operating method of a storage device including a nonvolatile memory, where the method may include: receiving a first packet including a read command for the nonvolatile memory from a host according to a first protocol; acquiring first requester information corresponding to an identifier (ID) of the host by parsing the first packet; determining resource priorities based on first requester information; reading data stored in the nonvolatile memory by using resources of the storage device according to the resource priorities; and transmitting the data to the host.
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公开(公告)号：US20240071545A1
公开(公告)日：2024-02-29
申请号：US18302034
申请日：2023-04-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seungjun Oh , Seong Geon Lee , Dae-Won Kim , Kyungduk Lee , Youn-Soo Cheon
CPC classification number: G11C29/12005 , G11C29/42 , G11C2029/1202
Abstract: A method of operating a memory device includes reading a first page of memory cells containing at least one worn-out memory cell therein using a read voltage, from a first memory block, and reading a second page of memory cells, which extends adjacent to the first page in the first memory block, using the read voltage. An operation is performed to determine a match rate between a position of a column including a “0” bit in the first page with a position of a column including a “0” bit in the second page. Thereafter, the second page is read by adjusting a read pass voltage applied to a word line of another page in the first memory block, when the match rate exceeds a threshold match rate.
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公开(公告)号：US11791013B2
公开(公告)日：2023-10-17
申请号：US17382868
申请日：2021-07-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seungjun Oh , Jihwa Lee , Kyungduk Lee
CPC classification number: G11C29/702 , G06F3/0679 , G11C29/022 , G11C29/1201 , G11C29/12005 , G11C29/48 , G01R31/52
Abstract: A storage device includes a plurality of nonvolatile memory devices, a storage controller circuit and a leakage detection circuit. The storage controller circuit controls a plurality of nonvolatile memory devices, the storage controller circuit includes a plurality of connection terminals, each of the plurality of connection terminals is commonly connected to a corresponding set of pins, from among the pluralities of pins included in the plurality of nonvolatile memory devices, via a corresponding connection node, from among a plurality of connection nodes. The pins included in each set of pins have a same attribute. The leakage detection circuit is configured to determine whether leakage occurs at each set of pins based on the merged signal generated by the connection node connected to each set of pins, and configured to provide the storage controller circuit with a detection signal indicating a result of the determination.
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Patent Agency Ranking
公开(公告)号：US20230071289A1
公开(公告)日：2023-03-09
申请号：US17720141
申请日：2022-04-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jongsung Na , Youngseop Shim , Kyungduk Lee , Sangho Yi
IPC: G06F3/06
Abstract: A storage device and an operating method thereof are provided. The storage device includes a memory configured to store parameter data used as an input in a neural network. The storage device also includes a storage controller configured to receive a request signal from a host. The storage controller is also configured to encode, based on the parameter data, log data in the neural network, the log data indicating contexts of the plurality of components, and transmit the encoded log data to the host.
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公开(公告)号：US20230069623A1
公开(公告)日：2023-03-02
申请号：US17718523
申请日：2022-04-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyungduk Lee , Youngseop Shim , Jongsung Na , Inhwan Doh
IPC: G06F3/06
Abstract: A storage device and operating method thereof includes a storage controller configured to receive a get log page command from a host and transmit, to the host, log data about at least one context selected from among respective contexts of a plurality of components according to the get log page command, and a memory storing the log data, wherein the get log page command includes selection information for selecting at least one component from among the plurality of components.
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27.发明授权公开(公告)号：US11314452B2
公开(公告)日：2022-04-26
申请号：US16729719
申请日：2019-12-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jinwoo Lim , Kyungduk Lee
Abstract: A method of controlling an operation of a nonvolatile memory device includes monitoring multiple data streams having different stream identifiers to determine a stream data characteristic of each of the multiple data streams, determining a plurality of operation conditions based on a plurality of operation environments, respectively, and determining one of the plurality of operation conditions as a stream operation condition of each of the multiple data streams based on the stream data characteristics of each of the multiple data streams.
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28.发明授权公开(公告)号：US11232008B2
公开(公告)日：2022-01-25
申请号：US16729743
申请日：2019-12-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyungduk Lee , Younsoo Cheon , Jihwa Lee
Abstract: A method of operating a storage device including a plurality of nonvolatile memories, each of the plurality of nonvolatile memories including a temperature sensor, includes checking whether a predetermined temperature check cycle for the plurality of nonvolatile memories has been reached, monitoring, in response to the checking result, temperature information of at least some of the plurality of nonvolatile memories using the temperature sensor, obtaining standing time information of the plurality of nonvolatile memories by applying a temperature acceleration condition based on the monitored temperature information, and changing at least one of a plurality of driving parameters required for operating each of the plurality of nonvolatile memories based on at least one of the monitored temperature information and the obtained standing time information.
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公开(公告)号：US10713105B2
公开(公告)日：2020-07-14
申请号：US15961918
申请日：2018-04-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kwangkyu Bang , Young-Seop Shim , Heeyoub Kang , Kyungduk Lee
Abstract: An operating method of a memory controller to control a nonvolatile memory device includes receiving information about operation failure from the nonvolatile memory device, receiving lock-out status information from the nonvolatile memory device, determining whether a lock-out signal is output based on the lock-out status information, and determining a failure block corresponding to the information about the operation failure as a normal block or a bad block depending on the determination result.
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