中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

44 records (took 0.019 seconds)

    Integrated circuit device and method of manufacturing the same
    21.
    发明授权
    Integrated circuit device and method of manufacturing the same 有权

    公开(公告)号：US11264381B2

    公开(公告)日：2022-03-01

    申请号：US16841806

    申请日：2020-04-07

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Seungryul Lee ,  Yongseung Kim ,  Jungtaek Kim ,  Pankwi Park ,  Dongchan Suh ,  Moonseung Yang ,  Seojin Jeong ,  Minhee Choi ,  Ryong Ha

    IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/423 ,  H01L29/78 ,  H01L29/06

    Abstract: An integrated circuit device includes a fin-type active region protruding from a substrate and extending in a first direction, a plurality of semiconductor patterns disposed apart from an upper surface of the fin-type active region, the plurality of semiconductor patterns each including a channel region; a gate electrode surrounding the plurality of semiconductor patterns, extending in a second direction perpendicular to the first direction, and including a main gate electrode, which is disposed on an uppermost semiconductor pattern of the plurality of semiconductor patterns and extends in the second direction, and a sub-gate electrode disposed between the plurality of semiconductor patterns; a spacer structure disposed on both sidewalls of the main gate electrode; and a source/drain region connected to the plurality of semiconductor patterns, disposed at both sides of the gate electrode, and contacting a bottom surface of the spacer structure.

    SEMICONDUCTOR DEVICE
    23.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20250040188A1

    公开(公告)日：2025-01-30

    申请号：US18588322

    申请日：2024-02-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yang Xu ,  Gyeom Kim ,  Pankwi Park ,  Ryong Ha ,  Yoon Heo

    IPC: H01L29/423 ,  H01L29/06 ,  H01L29/08 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

    Abstract: A semiconductor device includes a substrate; an active region extending in a first, horizontal, direction on the substrate, and including a first active pattern at a first height above a bottom surface of the substrate in a vertical direction and having a first width in a second, horizontal, direction, a second active pattern having a second width in the second direction different from the first width, and a transition active pattern connecting the first active pattern to the second active pattern; gate structures intersecting the active region each gate structure extending in the second direction across the substrate; source/drain regions disposed on sides of the gate structures, and including a first source/drain region disposed on the first active pattern, a second source/drain region disposed on the second active pattern, and a transition source/drain region disposed on the transition active pattern. Each of the source/drain regions is disposed on the active region and includes a first epitaxial layer having a recessed upper surface and a second epitaxial layer disposed on the first epitaxial layer, at a second height above a bottom surface of the substrate in a vertical direction, a first sidewall thickness of the first epitaxial layer of the first source/drain region in the first direction is different from a second sidewall thickness of the first epitaxial layer of the second source/drain region in the first direction, at the second height, thicknesses of opposing sidewalls of the first epitaxial layer of the transition source/drain region in the first direction are different, and a vertical level of a lowermost end of the second epitaxial layer of the first source/drain region, a vertical level of a lowermost end of the second epitaxial layer of the second source/drain region, and a vertical level of a lowermost end of the second epitaxial layer of the transition source/drain region are different from each other.

    Integrated circuit device
    25.
    发明授权
    Integrated circuit device 有权

    公开(公告)号：US11888026B2

    公开(公告)日：2024-01-30

    申请号：US17467944

    申请日：2021-09-07

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Minhee Choi ,  Seojin Jeong ,  Seokhoon Kim ,  Jungtaek Kim ,  Pankwi Park ,  Moonseung Yang ,  Ryong Ha

    IPC: H01L29/06 ,  H01L29/786 ,  H01L29/66

    CPC classification number: H01L29/0665 ,  H01L29/6656 ,  H01L29/78618

    Abstract: An integrated circuit device includes a fin-type active region on a substrate; at least one nanosheet having a bottom surface facing the fin top; a gate line on the fin-type active region; and a source/drain region on the fin-type active region, adjacent to the gate line, and in contact with the at least one nanosheet, wherein the source/drain region includes a lower main body layer and an upper main body layer, a top surface of the lower main body layer includes a lower facet declining toward the substrate as it extends in a direction from the at least one nanosheet to a center of the source/drain region, and the upper main body layer includes a bottom surface contacting the lower facet and a top surface having an upper facet. With respect to a vertical cross section, the lower facet extends along a corresponding first line and the upper facet extends along a second line that intersects the first line.

    Integrated circuit device
    26.
    发明授权
    Integrated circuit device 有权

    公开(公告)号：US11710738B2

    公开(公告)日：2023-07-25

    申请号：US17352763

    申请日：2021-06-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Keomyoung Shin ,  Pankwi Park ,  Seunghun Lee

    IPC: H01L27/088 ,  H01L29/26 ,  H01L29/78 ,  H01L29/08 ,  H01L29/06

    CPC classification number: H01L27/0886 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/26 ,  H01L29/785

    Abstract: An integrated circuit (IC) device includes a fin-type active region extending lengthwise in a first direction, a plurality of nanosheets overlapping each other in a second direction on a fin top surface of the fin-type active region, and a source/drain region on the fin-type active region and facing the plurality of nanosheets in the first direction. The plurality of nanosheets include a first nanosheet, which is closest to the fin top surface of the fin-type active region and has a shortest length in the first direction, from among the plurality of nanosheets. The source/drain region includes a source/drain main region and a first source/drain protruding region protruding from the source/drain main region. The first source/drain protruding region protrudes from the source/drain main region toward the first nanosheet and overlaps portions of the plurality of nanosheets in the second direction.

    Integrated circuit device
    28.
    发明授权
    Integrated circuit device 有权

    公开(公告)号：US11069681B2

    公开(公告)日：2021-07-20

    申请号：US16694706

    申请日：2019-11-25

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Keomyoung Shin ,  Pankwi Park ,  Seunghun Lee

    IPC: H01L27/088 ,  H01L29/26 ,  H01L29/78 ,  H01L29/08 ,  H01L29/06

    Abstract: An integrated circuit (IC) device includes a fin-type active region extending lengthwise in a first direction, a plurality of nanosheets overlapping each other in a second direction on a fin top surface of the fin-type active region, and a source/drain region on the fin-type active region and facing the plurality of nanosheets in the first direction. The plurality of nanosheets include a first nanosheet, which is closest to the fin top surface of the fin-type active region and has a shortest length in the first direction, from among the plurality of nanosheets. The source/drain region includes a source/drain main region and a first source/drain protruding region protruding from the source/drain main region. The first source/drain protruding region protrudes from the source/drain main region toward the first nanosheet and overlaps portions of the plurality of nanosheets in the second direction.

Patent Agency Ranking